Experimental measurements on broad-area 1300 nm lasers show that a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice active region yields ~6 cm^{-1} internal loss, ~500 A/cm^{2} transparency current density, 46 cm^{-1} modal gain, 53% internal efficiency, and characteristic temps T0=
6 -mW single-mode high -speed 1550 -nm wafer - fused VCSELs for DWDM application
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2024 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
Experimental measurements on broad-area 1300 nm lasers show that a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice active region yields ~6 cm^{-1} internal loss, ~500 A/cm^{2} transparency current density, 46 cm^{-1} modal gain, 53% internal efficiency, and characteristic temps T0=