Sulphur divacancies in MoS2 dominate nonradiative recombination with capture coefficients of ~10^{-9} cm^3/s due to strong lattice relaxation enabling efficient multiphonon capture, while single vacancies and other defects contribute far less.
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C-AFM spectroscopy under ambient conditions categorizes defects in MoS2 as n-type and p-type transition-metal substitutions plus oxygen-on-sulfur sites via local conductivity and differential conductance maps.
citing papers explorer
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Dominant Role of Sulphur divacancy in Charge Trapping Dynamics in MoS$_2$
Sulphur divacancies in MoS2 dominate nonradiative recombination with capture coefficients of ~10^{-9} cm^3/s due to strong lattice relaxation enabling efficient multiphonon capture, while single vacancies and other defects contribute far less.
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Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions
C-AFM spectroscopy under ambient conditions categorizes defects in MoS2 as n-type and p-type transition-metal substitutions plus oxygen-on-sulfur sites via local conductivity and differential conductance maps.