ARPES reveals equally spaced quantum well states in bulk MoS2 after mechanical exfoliation, caused by a decoupled multilayer stack.
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Layer-dependent MoS2-to-MoN reactivity is attributed to vertical rearrangement of Mo atoms needed to form the stable multi-layer MoN structure.
Sulphur divacancies in MoS2 dominate nonradiative recombination with capture coefficients of ~10^{-9} cm^3/s due to strong lattice relaxation enabling efficient multiphonon capture, while single vacancies and other defects contribute far less.
C-AFM spectroscopy under ambient conditions categorizes defects in MoS2 as n-type and p-type transition-metal substitutions plus oxygen-on-sulfur sites via local conductivity and differential conductance maps.
Native DNA binds to MoS2 nanoflakes through coordination bonds between phosphate oxygens and molybdenum atoms at edges or sulfur-vacancy defects, not just weak surface adsorption.
citing papers explorer
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Dominant Role of Sulphur divacancy in Charge Trapping Dynamics in MoS$_2$
Sulphur divacancies in MoS2 dominate nonradiative recombination with capture coefficients of ~10^{-9} cm^3/s due to strong lattice relaxation enabling efficient multiphonon capture, while single vacancies and other defects contribute far less.
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Electronic Spectroscopy of Atomic Defects in Molybdenum Disulfide under Ambient Conditions
C-AFM spectroscopy under ambient conditions categorizes defects in MoS2 as n-type and p-type transition-metal substitutions plus oxygen-on-sulfur sites via local conductivity and differential conductance maps.