Three-dimensional dislocation visualization in beta-Ga2O3 is demonstrated using synchrotron-radiation Borrmann-effect X-ray topo-tomography, separating epilayer and substrate defects in Schottky barrier diode structures.
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X-ray topography shows high crystalline quality (26 arcsec FWHM) beneath the seed in OCCC-grown β-Ga2O3 with <010> screw dislocations at ~10^5 cm^{-2} and twist misorientation during diameter enlargement.
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Three-dimensional visualization of lattice defects in $\beta$-Ga$_2$O$_3$ via synchrotron-radiation Borrmann-effect X-ray topo-tomography
Three-dimensional dislocation visualization in beta-Ga2O3 is demonstrated using synchrotron-radiation Borrmann-effect X-ray topo-tomography, separating epilayer and substrate defects in Schottky barrier diode structures.
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Synchrotron-radiation X-ray topography and reticulography of bulk $\beta$-Ga$_2$O$_3$ crystals grown by the cold crucible method
X-ray topography shows high crystalline quality (26 arcsec FWHM) beneath the seed in OCCC-grown β-Ga2O3 with <010> screw dislocations at ~10^5 cm^{-2} and twist misorientation during diameter enlargement.