A spin-orbit torque nano-oscillator with a GMR readout produces about 1 nW of microwave power, roughly 100 to 1000 times more than an equivalent AMR-based oscillator.
Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum,
10 Pith papers cite this work, alongside 4,075 external citations. Polarity classification is still indexing.
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PtCr/NiFe heterostructures generate magnetic auto-oscillations at lower current than Pt/NiFe, and the torque enhancement is attributed to orbital Hall currents from chromium that platinum converts into spin currents.
In the warped surface states of Bi2Te3 the linear spin Hall response is purely out-of-plane, and a second-order intrinsic in-plane spin current polarized along the field survives, but the claimed extrinsic collinear spin current is exactly zero by time-reversal symmetry.
Native oxidation of Cr in NiFe/Cr bilayers creates an interfacial orbital-current source yielding a giant damping-like torque efficiency of 3.9 × 10^6 Ω^-1 m^-1 and field-free switching at 1.58 × 10^11 A/m^2.
An MTJ-based logic-in-memory design performs fully parallel stochastic bit-stream generation and arithmetic without external random number generators by exploiting device stochasticity.
DFT calculations predict that the two-dimensional materials TcSiTe3, TcGeSe3, and TcGeTe3 are ferromagnetic semiconductors with Curie temperatures of 538 K, 212 K, and 187 K, respectively.
In a 2D model Hamiltonian, orbital Hall conductivity quantizes when altermagnetism exceeds sp-hybridization while spin Hall quantizes when Rashba SOC is weaker, with both independent of the other coupling and arising from Fermi-surface Berry curvature.
An out-of-plane harmonic Hall measurement geometry quantitatively extracts spin-orbit and orbital torques in in-plane magnetized films and reproduces the two-fold torque enhancement from a Cu/CuOx interface.
A simulation study finds that deterministic field-free SOT+DMI switching in circular nanodots occurs when the domain wall width is smaller than about a fixed fraction of the dot diameter.
Monolayer MoS2 under a 5 nm Ni80Fe20 film increases ferromagnetic resonance damping, and inserting a Pt interlayer up to 5 nm raises the derived spin-mixing conductance and spin current density.
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Maximizing Memory-Level Parallelism via Integrated Stochastic Logic-in-Memory Architectures
An MTJ-based logic-in-memory design performs fully parallel stochastic bit-stream generation and arithmetic without external random number generators by exploiting device stochasticity.
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Quantized orbital and spin Hall transport: interplay between $sp$-hybridization, altermagnetism and spin-orbit coupling
In a 2D model Hamiltonian, orbital Hall conductivity quantizes when altermagnetism exceeds sp-hybridization while spin Hall quantizes when Rashba SOC is weaker, with both independent of the other coupling and arising from Fermi-surface Berry curvature.