TCAD device simulations and SPICE circuit simulations indicate that spin-dependent charge distributions in a GAA transistor produce distinguishable currents that a conventional CMOS sense amplifier can detect when voltage is dynamically controlled.
Tanamoto, ``3D Stacked Spin Qubit by TCAD Simulations,'' International 3D Systems Integration Conference (3DIC) , 1-4
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2025 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor
TCAD device simulations and SPICE circuit simulations indicate that spin-dependent charge distributions in a GAA transistor produce distinguishable currents that a conventional CMOS sense amplifier can detect when voltage is dynamically controlled.