A new protocol distinguishes momentum-direct KK interlayer excitons in MoS2-MoSe2 and MoS2-WSe2 from strain-induced photoluminescence artifacts previously misassigned as momentum-indirect ΓK-IX in MoS2-WSe2.
M.et al.Strain fingerprinting of exciton valley character in 2D semiconductors
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
The Topography Trap: Sifting Interlayer Excitons from Strain-Related Artifacts in Real-World 2D Hetrostructures
A new protocol distinguishes momentum-direct KK interlayer excitons in MoS2-MoSe2 and MoS2-WSe2 from strain-induced photoluminescence artifacts previously misassigned as momentum-indirect ΓK-IX in MoS2-WSe2.