Ni doping in CeCoIn5 increases carrier density linearly as electron doping while suppressing anomalous enhancements in the Hall coefficient near the upper critical field and above Tc.
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Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements
Ni doping in CeCoIn5 increases carrier density linearly as electron doping while suppressing anomalous enhancements in the Hall coefficient near the upper critical field and above Tc.