Site-controlled InAs/InP quantum dots on nanopyramids achieve FSS below 9.2 μeV resolution limit with single-photon emission in S, C, and L telecom bands.
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2 Pith papers cite this work, alongside 79 external citations. Polarity classification is still indexing.
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LDE-grown InGaAs QDs in InAlAs show narrow 0.2 meV lines, g2(0) of 0.07 under CW excitation, and single-photon emission persisting to liquid-nitrogen temperatures.
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Telecom-band site-controlled quantum dots with engineered low fine-structure splitting
Site-controlled InAs/InP quantum dots on nanopyramids achieve FSS below 9.2 μeV resolution limit with single-photon emission in S, C, and L telecom bands.
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Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters
LDE-grown InGaAs QDs in InAlAs show narrow 0.2 meV lines, g2(0) of 0.07 under CW excitation, and single-photon emission persisting to liquid-nitrogen temperatures.