Chlorine defects in 4H-SiC provide telecom-band emission, sub-nanosecond lifetimes, room-temperature ODMR, and hyperfine-resolved spin control, positioning them as a candidate for chip-scale quantum memories.
Figure 2c shows a PL decay of the ClV1 ZPL un- der pulsed excitation, which is spectrally selected with a 1350/12 bandpass filter (central wavelength 1350 nm, bandwidth 12 nm)
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Telecom-band quantum memory with chlorine defects in silicon carbide
Chlorine defects in 4H-SiC provide telecom-band emission, sub-nanosecond lifetimes, room-temperature ODMR, and hyperfine-resolved spin control, positioning them as a candidate for chip-scale quantum memories.