{"schema":"pith.reference-change-event.v1","doi":"10.1038/nature02308","canonical_url":"https://pith.science/event/10.1038/nature02308","json_url":"https://pith.science/event/10.1038/nature02308.json","not_a_judgment":"This page records that a citing paper's bibliography includes a work with a published notice. It is not a judgment on the citing paper.","primary":{"event_id":476930,"doi":"10.1038/nature02308","event_type":"correction","event_type_label":"Correction","source":"crossref","source_label":"Crossref","event_date":"2006-05-03","title":"Erratum: Corrigendum: A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface","work_title":"Ohtomo \\ and\\ author H","work_doi":"10.1038/nature02308","work_arxiv_id":null,"notice_doi":"10.1038/nature04773","flag_count":0,"flags_open":0,"flags_disputed":0,"latest_flag_at":null,"human_href":"/event/10.1038/nature02308","json_href":"/event/10.1038/nature02308.json"},"events":[{"event_id":476930,"doi":"10.1038/nature02308","event_type":"correction","event_type_label":"Correction","source":"crossref","source_label":"Crossref","event_date":"2006-05-03","title":"Erratum: Corrigendum: A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface","work_title":"Ohtomo \\ and\\ author H","work_doi":"10.1038/nature02308","work_arxiv_id":null,"notice_doi":"10.1038/nature04773","flag_count":0,"flags_open":0,"flags_disputed":0,"latest_flag_at":null,"human_href":"/event/10.1038/nature02308","json_href":"/event/10.1038/nature02308.json"}],"flags":[{"id":6884,"status":"open","status_label":"Open","citing_arxiv_id":"2512.11176","citing_title":"Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices","ref_index":24,"evidence_raw":"author author A. Ohtomo \\ and\\ author H. Hwang ,\\ https://doi.org/10.1038/nature02308 journal journal Nature \\ volume 427 ,\\ pages 423 ( year 2004 ) NoStop","evidence_cleaned":"author author A. Ohtomo and author H. Hwang, https://doi.org/10.1038/nature02308 journal journal Nature volume 427, pages 423 ( year 2004 )","evidence_source_label":"bibliography line","event_type":"correction","event_type_label":"Correction","source_label":"Crossref","event_date":"2006-05-03","work_title":"Ohtomo \\ and\\ author H","work_doi":"10.1038/nature02308","event_doi":"10.1038/nature02308","flag_href":"/flags/6884","event_href":"/event/10.1038/nature02308","paper_href":"/paper/2512.11176","created_at":"2026-07-11T03:19:18.425668Z","dispute_note":null,"disputed_at":null,"disputed_by":null},{"id":6883,"status":"open","status_label":"Open","citing_arxiv_id":"2605.12101","citing_title":"Mechanical detection of sub-band mobilities of two-dimensional electron gas on reduced SrTiO$_3$(001) surface","ref_index":13,"evidence_raw":"toE 1,E 2, andE 3 energy in gap states. The heavy-electron Γ 1 band exhibits lower mobility values as compared to the lighter Γ 2, Γ3. The extracted values are summarized in Table 1 and range from 2500-4800cm 2V −1s−1, consistent with previously reported high-mobility values of an electron gas confined at the LaAlO3/SrTiO3 interface at low temperatures [13]. We will make one remark before closing. A tiny discontinuity is observed aroundB=±0.43T for the heavy Γ 1 sub-band (Figure 4a), accompanied to slight increase of mobility (µ= eτ m∗ ) for|B|>0.43T. Within the single relax- ation time approximation, this observation implies a reduced scattering rate 1/τ. It is possibly due to the heavy character ofd xz/yz band, which exhibits","evidence_cleaned":null,"evidence_source_label":"citation context","event_type":"correction","event_type_label":"Correction","source_label":"Crossref","event_date":"2006-05-03","work_title":"Ohtomo \\ and\\ author H","work_doi":"10.1038/nature02308","event_doi":"10.1038/nature02308","flag_href":"/flags/6883","event_href":"/event/10.1038/nature02308","paper_href":"/paper/2605.12101","created_at":"2026-07-11T03:19:18.425668Z","dispute_note":null,"disputed_at":null,"disputed_by":null}],"flag_count":2,"flags_open":2,"flags_disputed":0,"desk_url":"https://pith.science/flags"}