{"schema":"pith.reference-change-event.v1","doi":"10.1063/1.4985855","canonical_url":"https://pith.science/event/10.1063/1.4985855","json_url":"https://pith.science/event/10.1063/1.4985855.json","not_a_judgment":"This page records that a citing paper's bibliography includes a work with a published notice. It is not a judgment on the citing paper.","primary":{"event_id":244925,"doi":"10.1063/1.4985855","event_type":"correction","event_type_label":"Correction","source":"crossref","source_label":"Crossref","event_date":"2018-10-16","title":"Erratum: “Interplay between morphological and shielding effects in field emission via Schwarz-Christoffel transformation” [J. Appl. Phys. 123, 124302 (2018)]","work_title":null,"work_doi":"10.1063/1.4985855","work_arxiv_id":null,"notice_doi":"10.1063/1.5054145","flag_count":0,"flags_open":0,"flags_disputed":0,"latest_flag_at":null,"human_href":"/event/10.1063/1.4985855","json_href":"/event/10.1063/1.4985855.json"},"events":[{"event_id":244925,"doi":"10.1063/1.4985855","event_type":"correction","event_type_label":"Correction","source":"crossref","source_label":"Crossref","event_date":"2018-10-16","title":"Erratum: “Interplay between morphological and shielding effects in field emission via Schwarz-Christoffel transformation” [J. Appl. Phys. 123, 124302 (2018)]","work_title":null,"work_doi":"10.1063/1.4985855","work_arxiv_id":null,"notice_doi":"10.1063/1.5054145","flag_count":0,"flags_open":0,"flags_disputed":0,"latest_flag_at":null,"human_href":"/event/10.1063/1.4985855","json_href":"/event/10.1063/1.4985855.json"},{"event_id":224376,"doi":"10.1063/1.4985855","event_type":"correction","event_type_label":"Correction","source":"crossref","source_label":"Crossref","event_date":"2018-10-03","title":"Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]","work_title":null,"work_doi":"10.1063/1.4985855","work_arxiv_id":null,"notice_doi":"10.1063/1.5051998","flag_count":0,"flags_open":0,"flags_disputed":0,"latest_flag_at":null,"human_href":"/event/10.1063/1.4985855","json_href":"/event/10.1063/1.4985855.json"}],"flags":[{"id":10147,"status":"open","status_label":"Open","citing_arxiv_id":"1908.06914","citing_title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","ref_index":1,"evidence_raw":"Ghose, S. et al. Growth and characterization of β-Ga2O3thin films by molecular beam epitaxy for deep- UV photodetectors. J. Appl. Phys. (2017). doi:10.1063/1.4985855","evidence_cleaned":null,"evidence_source_label":"bibliography line","event_type":"correction","event_type_label":"Correction","source_label":"Crossref","event_date":"2018-10-16","work_title":null,"work_doi":"10.1063/1.4985855","event_doi":"10.1063/1.4985855","flag_href":"/flags/10147","event_href":"/event/10.1063/1.4985855","paper_href":"/paper/1908.06914","created_at":"2026-08-14T18:18:46.178222Z","dispute_note":null,"disputed_at":null,"disputed_by":null},{"id":10143,"status":"open","status_label":"Open","citing_arxiv_id":"1908.06914","citing_title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","ref_index":1,"evidence_raw":"Ghose, S. et al. Growth and characterization of β-Ga2O3thin films by molecular beam epitaxy for deep- UV photodetectors. J. Appl. Phys. (2017). doi:10.1063/1.4985855","evidence_cleaned":null,"evidence_source_label":"bibliography line","event_type":"correction","event_type_label":"Correction","source_label":"Crossref","event_date":"2018-10-03","work_title":null,"work_doi":"10.1063/1.4985855","event_doi":"10.1063/1.4985855","flag_href":"/flags/10143","event_href":"/event/10.1063/1.4985855","paper_href":"/paper/1908.06914","created_at":"2026-08-14T18:18:46.083003Z","dispute_note":null,"disputed_at":null,"disputed_by":null}],"flag_count":2,"flags_open":2,"flags_disputed":0,"desk_url":"https://pith.science/flags"}