pith. sign in

arxiv: 2604.05328 · v1 · submitted 2026-04-07 · ❄️ cond-mat.mtrl-sci · physics.app-ph

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Yi Liang , Pat Kezer , John T. Heron This is my paper

Pith reviewed 2026-05-10 20:00 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci physics.app-ph
keywords ferroelectric switchingPUND measurementsAvrami exponentswitching kineticsvoltage distortionsnucleation and growthpolarization reversalcircuit effects
0
0 comments X

The pith

Neglecting time-varying voltage profiles in ferroelectric switching measurements leads to unphysical Avrami exponents.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that the measurement circuit interacting with ferroelectric capacitors creates distorted voltage waveforms that change over time, especially at sub-nanosecond scales. These distortions are not accounted for in standard PUND measurement analyses or model fittings. As a result, extracted parameters for polarization reversal dynamics, such as the Avrami exponent representing growth dimensionality, can be misinterpreted as unphysical values. The authors provide guidelines emphasizing direct voltage monitoring and circuit-aware corrections to obtain accurate switching kinetics based on material properties.

Core claim

The interplay between ferroelectric capacitors and circuit elements produces distorted, time-dependent voltage waveforms across the device in PUND measurements. Neglecting these time-varying profiles in conventional analyses leads to unphysical interpretations of switching kinetics, particularly in the extracted growth dimensionality given by the Avrami exponent. The paper calls for incorporating voltage-dependent rates and circuit de-embedding to align models with material-intrinsic parameters.

What carries the argument

Distorted time-dependent voltage waveforms produced by the interplay of ferroelectric capacitors with external circuit elements, which affect polarization transients and kinetic model fitting.

If this is right

  • Distortions in voltage waveforms scale with supply voltage, capacitor dimensions, and lumped circuit elements.
  • Extracted Avrami exponents may not reflect true domain growth dimensionality when time-varying voltages are ignored.
  • Polarization transients require circuit-aware corrections to yield reliable switching kinetics.
  • Nucleation and growth models must incorporate rates that depend on the instantaneous voltage based on intrinsic material parameters.
  • Experimental protocols should include direct voltage monitoring and de-embedding procedures.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Re-analysis of existing high-speed ferroelectric data sets could reveal systematic errors in reported kinetics.
  • Circuit simulation integrated into kinetics models might improve predictions for fast-switching memory devices.
  • The same voltage distortion issue could appear in studies of other voltage-driven switching phenomena in thin films.
  • Standardized test fixtures with built-in voltage sensing would help isolate material-intrinsic behavior across labs.

Load-bearing premise

Conventional PUND measurements and analytical fittings assume undistorted and time-independent voltage waveforms across the ferroelectric capacitor.

What would settle it

Directly monitoring the actual voltage across the device during sub-ns PUND switching and re-fitting the Avrami exponent after de-embedding; a shift toward physically plausible values would confirm the effect.

Figures

Figures reproduced from arXiv: 2604.05328 by John T. Heron, Pat Kezer, Yi Liang.

Figure 3
Figure 3. Figure 3: Possible linear components embedded in the MFM structure. a,b [PITH_FULL_IMAGE:figures/full_fig_p022_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: Behavior of constant voltage nucleation and growth models. a, [PITH_FULL_IMAGE:figures/full_fig_p023_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: Avrami exponent mystery. a, The NLS and SNNG models explain unphysical Avrami exponents via different mechanisms. By using a time-dependent nucleation rate, they capture the dynamic behavior of the exponent. b, A schematic of the alternative explanation for growth dimension lower than physical dimension. It happens when the elastic domain wall is deformed by disordered defects, and therefore the propagatio… view at source ↗
Figure 6
Figure 6. Figure 6: Perspectives on nucleation and growth models. a, [PITH_FULL_IMAGE:figures/full_fig_p025_6.png] view at source ↗
read the original abstract

Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay between ferroelectric capacitors and circuit elements produces distorted, time-dependent voltage waveforms across the device, particularly in the sub-ns regime. We examine how these circuit contributions affect polarization transients extracted from PUND measurements. The resulting distortions scale with supply voltage, capacitor dimensions, and lumped circuit elements, but are not accounted for in conventional experimental analyses or analytical model fitting. We then critically assess existing nucleation and growth models and show that neglecting the time-varying voltage profile can lead to unphysical interpretations of switching kinetics, most notably in the extracted growth dimensionality represented by the Avrami exponent. Finally, we outline guidelines for future studies, emphasizing the need for direct voltage monitoring and circuit-aware de-embedding, as well as modeling frameworks that incorporate voltage-dependent nucleation and growth rates based on intrinsic material parameters.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 1 minor

Summary. The paper claims that circuit parasitics in PUND measurements of ferroelectric capacitors generate time-dependent voltage waveforms across the device, especially in the sub-ns regime. These distortions are not accounted for in standard analyses, leading to misinterpretation of polarization switching transients when fitting nucleation-and-growth models; in particular, the extracted Avrami exponent (growth dimensionality) can take unphysical values. The manuscript reviews historical foundations of these models, critically assesses their application to distorted data, and provides practical guidelines emphasizing direct voltage monitoring and circuit-aware de-embedding.

Significance. If the claimed mapping from realistic V(t) waveforms to shifted Avrami exponents is demonstrated quantitatively, the result would be important for the ferroelectric kinetics community, where Avrami analysis remains common. The emphasis on circuit effects and the provision of guidelines represent a useful cautionary contribution, though the current lack of concrete effect sizes limits its immediate impact on reinterpreting existing literature.

major comments (1)
  1. The central claim that circuit-induced voltage distortions produce unphysical Avrami exponents rests on the assertion that standard KJMA fitting applied to distorted P(t) transients yields n outside physically expected ranges. However, no explicit example is given: no realistic V(t) waveform (derived from circuit analysis), no resulting polarization transient, and no before/after comparison of fitted n values (e.g., showing a shift from 2<n<4 into n>4 or n<1). This quantitative link is load-bearing for the interpretive consequence highlighted in the abstract and must be supplied to substantiate the critique of existing models.
minor comments (1)
  1. The abstract and guidelines section refer to 'direct voltage monitoring' and 'circuit-aware de-embedding' without specifying the instrumentation bandwidth or de-embedding procedure (e.g., whether it involves S-parameter measurements or simple probe compensation). A brief worked example or reference to standard RF de-embedding methods would improve clarity.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for their careful reading of the manuscript and for highlighting the need for a more explicit quantitative demonstration of our central claim. We address the major comment below and will revise the manuscript to incorporate the requested example.

read point-by-point responses

  1. Referee: The central claim that circuit-induced voltage distortions produce unphysical Avrami exponents rests on the assertion that standard KJMA fitting applied to distorted P(t) transients yields n outside physically expected ranges. However, no explicit example is given: no realistic V(t) waveform (derived from circuit analysis), no resulting polarization transient, and no before/after comparison of fitted n values (e.g., showing a shift from 2<n<4 into n>4 or n<1). This quantitative link is load-bearing for the interpretive consequence highlighted in the abstract and must be supplied to substantiate the critique of existing models.

    Authors: We agree that an explicit quantitative example is necessary to fully substantiate the claim that circuit-induced distortions can produce unphysical Avrami exponents. While the manuscript reviews the historical foundations of KJMA models, discusses how time-varying voltage profiles affect polarization transients, and notes the potential for unphysical interpretations of the growth dimensionality, it does not include a concrete numerical demonstration with a specific circuit-derived V(t), the corresponding P(t), and comparative KJMA fits. In the revised manuscript we will add this example: we will present a lumped-element circuit model (including realistic parasitic inductance, resistance, and the ferroelectric capacitance), derive the resulting time-dependent voltage waveform across the device for a typical PUND pulse in the sub-ns regime, simulate the polarization transient using a voltage-dependent nucleation-and-growth rate, and show the fitted Avrami exponent both when the distortion is ignored (yielding n outside the physically expected 1–4 range) and when the actual V(t) is accounted for. This addition will directly illustrate the mapping from circuit effects to shifted exponents and strengthen the practical guidelines. revision: yes

Circularity Check

0 steps flagged

No circularity; standard circuit analysis applied without self-referential fitting or load-bearing self-citations

full rationale

The paper applies conventional circuit theory to ferroelectric PUND measurements and critiques the impact of time-dependent voltage waveforms on extracted Avrami exponents from nucleation-growth models. No equations, derivations, or predictions are shown that reduce by construction to fitted inputs or self-defined quantities. No self-citations are invoked as uniqueness theorems or to smuggle ansatzes; the argument relies on external principles of circuit analysis and KJMA fitting that remain independently verifiable. The derivation chain is therefore self-contained against external benchmarks with no reduction to the paper's own inputs.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The central claim rests on domain assumptions from ferroelectric physics and basic circuit theory without introducing new free parameters or postulated entities.

axioms (2)
  • domain assumption Ferroelectric polarization reversal proceeds via nucleation and growth processes describable by Avrami-type models
    Invoked when assessing how voltage distortions affect extracted growth dimensionality
  • domain assumption PUND measurements are intended to isolate intrinsic switching kinetics under constant voltage conditions
    Used as the baseline that circuit effects violate

pith-pipeline@v0.9.0 · 5467 in / 1364 out tokens · 49361 ms · 2026-05-10T20:00:21.382327+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

61 extracted references · 61 canonical work pages

  1. [1]

    Introduction In the 1970s, initial development of ferroelectric materials into thin films began due to the accompanied need for integrated non-volatile memories and the maturation of thin film processing techniques[1,2]. Since then, the number of ferroelectric thin films has grown immensely along with their potential to solve major challenges in a variety...

    work page

  2. [2]

    are needed to surpass current CMOS implementations . From these and the realization that computing can be done at the fundamental limit of materials behavior, the need to understand the dynamics of polarization switching in thin films has become imperative, in particular as the volume of the ferroelectric material approaches sub -micron scales. In more re...

    work page

  3. [3]

    OPEN” and “THRU

    Experimental extraction of switching kinetics 2.1 Free and bound charges and the electric displacement vector To measure and interpret electrical measurements of ferroelectric switching transients, we must have a way to connect the displacement current measured to the dielectric response. An ideal ferroelectric material, one without leakage current or spa...

    work page 1989

  4. [4]

    sluggish

    Modeling of switching kinetics Once ferroelectric polarization transient is measured by PUND method, a model of the phase evolution (say a classical nucleation and growth model) can be used to provide fundamental microscopic insight into the mechanism of the evolution with the extraction of material parameters. Besides, as the evolution of ferroelectric p...

    work page 1954

  5. [5]

    The central objective is to elucidate and ultimately control the underlying mechanisms of polarization reversal, governed by the nucleation and growth of domains

    Conclusion Investigation of ferroelectric switching kinetics via electrical measurements are increasingly moving toward the intrinsic limits of materials in terms of switching speed and device scaling. The central objective is to elucidate and ultimately control the underlying mechanisms of polarization reversal, governed by the nucleation and growth of d...

    work page

  6. [6]

    Fernandez, M

    A. Fernandez, M. Acharya, H.-G. Lee, J. Schimpf, Y . Jiang, D. Lou, Z. Tian, L. W. Martin, Advanced Materials 2022, 34, 2108841

    work page 2022

  7. [7]

    Setter, D

    N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y . Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V . Taylor, T. Yamada, S. Streiffer, J. Appl. Phys. 2006, 100, 051606

    work page 2006

  8. [8]

    A. I. Khan, A. Keshavarzi, S. Datta, Nat Electron 2020, 3, 588

    work page 2020

  9. [9]

    Grigoriev, M

    A. Grigoriev, M. M. Azad, J. McCampbell, Rev. Sci. Instrum. 2011, 82, 124704

    work page 2011

  10. [10]

    J. Li, B. Nagaraj, H. Liang, W. Cao, Chi. H. Lee, R. Ramesh, Appl. Phys. Lett. 2004, 84, 1174

    work page 2004

  11. [11]

    Parsonnet, Y .-L

    E. Parsonnet, Y .-L. Huang, T. Gosavi, A. Qualls, D. Nikonov, C.-C. Lin, I. Young, J. Bokor, L. W. Martin, R. Ramesh, Phys. Rev. Lett. 2020, 125, 067601

    work page 2020

  12. [12]

    Jiang, E

    Y . Jiang, E. Parsonnet, A. Qualls, W. Zhao, S. Susarla, D. Pesquera, A. Dasgupta, M. Acharya, H. Zhang, T. Gosavi, C.-C. Lin, D. E. Nikonov, H. Li, I. A. Young, R. Ramesh, L. W. Martin, Nat. Mater. 2022, 21, 779

    work page 2022

  13. [13]

    P . K. Larsen, G. L. M. Kampschöer, M. J. E. Ulenaers, G. A. C. M. Spierings, R. Cuppens, Appl. Phys. Lett. 1991, 59, 611

    work page 1991

  14. [14]

    Pantel, Y .-H

    D. Pantel, Y .-H. Chu, L. W. Martin, R. Ramesh, D. Hesse, M. Alexe, J. Appl. Phys. 2010, 107, 084111

    work page 2010

  15. [15]

    Shang, X

    Z. Shang, X. Li, C. Ye, H. Li, P . Cai, X. Wu, R. Wang, M. Li, R. Huang, Nano Lett. 2025, 25, 3826

    work page 2025

  16. [16]

    J. F . Scott, C. A. Araujo, H. B. Meadows, L. D. McMillan, A. Shawabkeh, J. Appl. Phys. 1989, 66, 1444

    work page 1989

  17. [17]

    Ishibashi, Y

    Y . Ishibashi, Y . Takagi, J. Phys. Soc. Jpn. 1971, 31, 506

    work page 1971

  18. [18]

    A. N. Kolmogorov, Izv. Akad. Nauk SSSR, Ser. Mat. 1937, 3, 355

    work page 1937

  19. [19]

    Avrami, J

    M. Avrami, J. Chem. Phys. 1939, 7, 1103

    work page 1939

  20. [20]

    Avrami, J

    M. Avrami, J. Chem. Phys. 1940, 8, 212

    work page 1940

  21. [21]

    A. K. Tagantsev, Phys. Rev. B 2002, 66

    work page 2002

  22. [22]

    Yazawa, J

    K. Yazawa, J. Hayden, J.-P . Maria, W. Zhu, S. Trolier-McKinstry, A. Zakutayev, G. L. Brennecka, Mater. Horiz. 2023, 10, 2936

    work page 2023

  23. [23]

    W. J. Merz, Phys. Rev. 1954, 95, 690

    work page 1954

  24. [24]

    Y . Yang, T. Zhang, Z. Zheng, J. Guo, H. Han, J. Cui, J. Ma, J. Guo, D. Yi, C.-W. Nan, Advanced Functional Materials n/a, e11380

    work page

  25. [25]

    Guido, X

    R. Guido, X. Wang, B. Xu, R. Alcala, T. Mikolajick, U. Schroeder, P . D. Lomenzo, ACS Appl. Mater. Interfaces 2024, 16, 42415

    work page 2024

  26. [26]

    Lohse, M

    O. Lohse, M. Grossmann, U. Boettger, D. Bolten, R. Waser, J. Appl. Phys. 2001, 89, 2332

    work page 2001

  27. [27]

    A. Q. Jiang, H. J. Lee, C. S. Hwang, J. F . Scott, Advanced Functional Materials 2012, 22, 192

    work page 2012

  28. [28]

    Grossmann, D

    M. Grossmann, D. Bolten, O. Lohse, U. Boettger, R. Waser, S. Tiedke, Appl. Phys. Lett. 2000, 77, 1894

    work page 2000

  29. [29]

    Chiang, J

    T. Chiang, J. J. Plombon, M. K. Lenox, I. Mercer, P . Debashis, M. DC, S. Trolier- McKinstry, J.-P . Maria, J. F . Ihlefeld, I. A. Young, J. T. Heron, Material-Limited Switching in Nanoscale Ferroelectrics, arXiv, 2025

    work page 2025

  30. [30]

    Chiang, M

    T. Chiang, M. K. Lenox, T. Ma, J. F . Ihlefeld, J. T. Heron, Appl. Phys. Lett. 2025, 126, 022904

    work page 2025

  31. [31]

    M. S. Majdoub, R. Maranganti, P . Sharma, Phys. Rev. B 2009, 79, 115412

    work page 2009

  32. [32]

    Wang, Y .-Q

    J. Wang, Y .-Q. Li, R. Wang, Q. Liu, H. Ye, P . Wang, X. Xu, H. Yang, F . Liu, B. Sheng, L. Yang, X. Yin, Y . Tong, T. Wang, W.-Y . Tong, X.-Z. Li, C.-G. Duan, B. Shen, X. Wang, Nat Commun 2025, 16, 6069

    work page 2025

  33. [33]

    T. K. Paul, A. K. Saha, S. K. Gupta, J. Appl. Phys. 2025, 137

    work page 2025

  34. [34]

    Yu. V . Podgorny, K. A. Vorotilov, A. S. Sigov, J. F . Scott, Appl. Phys. Lett. 2019, 114, 132902

    work page 2019

  35. [35]

    D. Zhao, T. Lenz, G. H. Gelinck, P . Groen, D. Damjanovic, D. M. de Leeuw, I. Katsouras, Nat Commun 2019, 10, 2547

    work page 2019

  36. [36]

    Zubko, J

    P . Zubko, J. C. Wojdeł, M. Hadjimichael, S. Fernandez-Pena, A. Sené, I. Luk’yanchuk, J.-M. Triscone, J. Íñiguez, Nature 2016, 534, 524

    work page 2016

  37. [37]

    J. Y . Jo, H. S. Han, J.-G. Yoon, T. K. Song, S.-H. Kim, T. W. Noh, Phys. Rev. Lett. 2007, 99, 267602

    work page 2007

  38. [38]

    Müller, P

    J. Müller, P . Polakowski, S. Mueller, T. Mikolajick, ECS J. Solid State Sci. Technol. 2015, 4, N30

    work page 2015

  39. [39]

    R. C. Miller, G. Weinreich, Phys. Rev. 1960, 117, 1460

    work page 1960

  40. [40]

    B. J. Rodriguez, Phys. Rev. Lett. 2007, 98

    work page 2007

  41. [41]

    R. Nath, N. A. Polomoff, J. Song, T. J. Moran, R. Ramesh, B. D. Huey, Advanced Electronic Materials 2022, 8, 2101389

    work page 2022

  42. [42]

    Tybell, P

    T. Tybell, P . Paruch, T. Giamarchi, J.-M. Triscone, Phys. Rev. Lett. 2002, 89, 097601

    work page 2002

  43. [43]

    J. Y . Jo, Phys. Rev. Lett. 2009, 102

    work page 2009

  44. [44]

    S. Liu, I. Grinberg, A. M. Rappe, Nature 2016, 534, 360

    work page 2016

  45. [45]

    N. Gong, X. Sun, H. Jiang, K. S. Chang-Liao, Q. Xia, T. P . Ma, Appl. Phys. Lett. 2018, 112, 262903

    work page 2018

  46. [46]

    Fichtner, N

    S. Fichtner, N. Wolff, F . Lofink, L. Kienle, B. Wagner, J. Appl. Phys. 2019, 125, 114103

    work page 2019

  47. [47]

    Hayden, Phys

    J. Hayden, Phys. Rev. Mater. 2021, 5

    work page 2021

  48. [48]

    Hayden, J

    J. Hayden, J. Shepard, J.-P . Maria, Appl. Phys. Lett. 2023, 123, 072901

    work page 2023

  49. [49]

    Casamento, S

    J. Casamento, S. M. Baksa, D. Behrendt, S. Calderon, D. Goodling, J. Hayden, F . He, L. Jacques, S. H. Lee, W. Smith, A. Suceava, Q. Tran, X. Zheng, R. Zu, T. Beechem, I. Dabo, E. C. Dickey, G. Esteves, V . Gopalan, M. D. Henry, J. F . Ihlefeld, T. N. Jackson, S. V . Kalinin, K. P . Kelley, Y . Liu, A. M. Rappe, J. Redwing, S. Trolier-McKinstry, J.-P . Ma...

    work page 2024

  50. [50]

    Yasuoka, R

    S. Yasuoka, R. Mizutani, R. Ota, T. Shiraishi, T. Shimizu, K. Okamoto, M. Uehara, H. Yamada, M. Akiyama, H. Funakubo, Appl. Phys. Lett. 2023, 123, 202902

    work page 2023

  51. [51]

    H. Lu, G. Schönweger, A. Petraru, H. Kohlstedt, S. Fichtner, A. Gruverman, Advanced Functional Materials 2024, 34, 2315169

    work page 2024

  52. [52]

    Yazawa, A

    K. Yazawa, A. Zakutayev, G. L. Brennecka, Sensors 2022, 22, 9659

    work page 2022

  53. [54]

    Liang, T

    Y . Liang, T. Chiang, M. K. Lenox, J. J. Plombon, J. F . Ihlefeld, W. Sun, J. T. Heron, Ferroelectric dynamic-field-driven nucleation and growth model for predictive materials- to-circuit co-design, arXiv, 2026

    work page 2026

  54. [55]

    Buragohain, A

    P . Buragohain, A. Erickson, T. Mimura, T. Shimizu, H. Funakubo, A. Gruverman, Advanced Functional Materials 2022, 32, 2108876

    work page 2022

  55. [56]

    X. J. Lou, J. Phys.: Condens. Matter 2008, 21, 012207

    work page 2008

  56. [57]

    L. E. Levine, K. L. Narayan, K. F . Kelton, Journal of Materials Research 1997, 12, 124

    work page 1997

  57. [58]

    A. D. Gaidhane, R. Dangi, S. Sahay, A. Verma, Y . S. Chauhan, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2023, 42, 1634

    work page 2023

  58. [59]

    L. D. Landau, I. M. Khalatnikov, Dokl. Akad. Nauk SSSR 1954, 469

    work page 1954

  59. [60]

    A. F . Devonshire, The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science 1949, 40, 1040

    work page 1949

  60. [61]

    A. F . Devonshire, The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science 1951, 42, 1065

    work page 1951

  61. [62]

    Paasio, R

    E. Paasio, R. Ranta, S. Majumdar, Advanced Electronic Materials 2025, 11, 2400840. Acknowledgements This work is supported by the ONR grant N000142612047. Data Availability Statement All data that supports the findings of this study are available from the corresponding author on reasonable request. A meme summarizing part of this work can be found on http...

    work page 2025