{"as_of":"2026-08-15T09:49:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:4b94f169ba44aef6c805d690cc7257566a463a11b45626bba2a7e18a3aafc601","coverage":[{"denominator":47,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":47,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-14T12:33:54.920451Z","state":"measured"},{"denominator":47,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":47,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-15T06:32:42.880941+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/1908.06914/citation-record","integrity":"/paper/1908.06914/integrity","json":"/paper/1908.06914/citation-record.json","paper":"/paper/1908.06914"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4985855","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.437834Z","title":null,"venue":null,"work_id":"fbbf4944-bed6-4bfa-8d43-37090ac1e39e","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.731904Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:7021960d4b1756b5dc23cad68f4b1d86e50eff332c2405a8378eebf1f332d0e8","observation_id":"6de176df-a27a-4413-ab24-70a0503dc442","resolution":{"observed_at":"2026-08-14T12:33:55.442149Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[{"edge_observation":{"observed_at":"2026-08-14T18:18:46.083003+00:00","source":"paper_reference_links","state":"open"},"event_date":"2018-10-03","event_type":"correction","notice_doi":"10.1063/1.5051998","provenance":{"observed_at":"2026-07-11T03:01:59.430616+00:00","source":"crossref","source_record_id":"10.1063/1.5051998->10.1063/1.4985855:correction"}},{"edge_observation":{"observed_at":"2026-08-14T18:18:46.178222+00:00","source":"paper_reference_links","state":"open"},"event_date":"2018-10-16","event_type":"correction","notice_doi":"10.1063/1.5054145","provenance":{"observed_at":"2026-07-11T03:03:04.878473+00:00","source":"crossref","source_record_id":"10.1063/1.5054145->10.1063/1.4985855:correction"}}],"reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcrysgro.2017.06.001","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.425030Z","title":null,"venue":null,"work_id":"b877a9e0-d42a-4220-8c74-ad05bb28ffa1","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.736961Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:1070a6290bc1a45f4e12bd22bc22f71ce97a31746fea61917e1e45221b3a8bb5","observation_id":"6be442d1-ce7c-4f15-9944-2ff1d431cd38","resolution":{"observed_at":"2026-08-14T12:33:55.429277Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcrysgro.2015.05.005","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.413038Z","title":null,"venue":null,"work_id":"1456ca63-28ac-416e-b6a7-556bb80d430a","year":2015},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.741218Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:ffaafa60aeee9b399588f100a72c5fea4c1ed1cca9d0027612be88adf147f2e7","observation_id":"1512ffd5-f967-436d-9f4f-6ba1dab73303","resolution":{"observed_at":"2026-08-14T12:33:55.416473Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.879867Z","title":"& Zhu, Z","venue":null,"work_id":"33c7c59a-4c38-4e17-9c69-f79182a5d400","year":null},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.745520Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:315d0e5d983b3d4d6b8998d20a8ffee7bdace68bf7db31d6c42c46e952d962fd","observation_id":"bf4ade8b-a0ed-4988-b99a-f8f3cedbb9d1","resolution":{"observed_at":"2026-08-14T12:33:55.884322Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jssc.2011.05.048","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.401124Z","title":null,"venue":null,"work_id":"d422cd4b-64c2-48ac-9e47-a409ac429c29","year":2011},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.749793Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:88b19dc29a756e8ee74b329563c05e6bc4108cf4bd9f51cfe0f75e84fb82211c","observation_id":"1c74187a-8dc8-4012-baa5-aa253d22a00a","resolution":{"observed_at":"2026-08-14T12:33:55.404891Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.754163Z","title":"& Fujita, S","venue":null,"work_id":null,"year":2008},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.754163Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:fbe0ec90a8882774654e757ab0b0887b5faff40c1b141556164be961776da946","observation_id":"caacabc0-ac52-4663-a913-1c7f119ce03c","resolution":{"observed_at":"2026-08-14T12:33:54.754163Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.758714Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.758714Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:6fde5422d00a5836db069756a5f257d092e1dafe9f7e213500d7baf6f50164b3","observation_id":"31307e8d-bb5c-4887-9c27-18f9759c14b5","resolution":{"observed_at":"2026-08-14T12:33:54.758714Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.mssp.2017.10.040","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.369426Z","title":"& Wagner, G","venue":null,"work_id":"7fc24a53-d3d8-4865-bbca-e4ca41381a55","year":2018},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.763112Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:fe126c8f6c4aed4d605a01cd1a2719dc5ffac1e31c7493eb08262534aefead19","observation_id":"386900eb-3929-4fff-b1d8-5df06c78850e","resolution":{"observed_at":"2026-08-14T12:33:55.374810Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsami.7b09812","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.355545Z","title":null,"venue":null,"work_id":"a39c0cb0-05f9-4b9f-94a7-244423cb3956","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.766938Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:2a55a4afa302e089319b6ab3d7e9abf6e6ad3aba4d8ee1dd375413a58803e818","observation_id":"daa5e8d0-3b14-4f51-8f11-38cef7a4b396","resolution":{"observed_at":"2026-08-14T12:33:55.359915Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/ja01123a039","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.342340Z","title":null,"venue":null,"work_id":"e4800efd-57a2-4702-afa2-16a2c0717211","year":1952},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.770765Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:bd1fdb7b7ded987fe83c8750597ed318bb175436f746c857146cd99ecec39923","observation_id":"03e7b922-c770-4f78-a9f3-77bdf52264ff","resolution":{"observed_at":"2026-08-14T12:33:55.346898Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.865969Z","title":"& Kuwabara, A","venue":null,"work_id":"62994791-075a-4ddd-aa70-2dfb5e3fe0dc","year":2007},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.774350Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:ba33f9f99f22b35447a313e43d79da2e5ad1b0851e9aac289269ca8ddfaf54a4","observation_id":"b5bd95dd-5abf-4c76-817a-b8636c5b3146","resolution":{"observed_at":"2026-08-14T12:33:55.870804Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.778532Z","title":"Y., Hannon, A","venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.778532Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:3939860a286ed9ec2c2fd630f4bc27d12fbdf128efd0716cf71dda77cc15744c","observation_id":"d4673dd4-1f5b-4d34-8540-25557960e1ab","resolution":{"observed_at":"2026-08-14T12:33:54.778532Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcrysgro.2014.02.032","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.321395Z","title":"& Kaneko, K","venue":null,"work_id":"afb8a1c8-5524-47c1-af8e-829e5c48c2a9","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.783147Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:b1435b263fec78a55cc8d136f48ac537414fd9878fb0f9f557561298c38312e2","observation_id":"649a8e55-5f53-4617-8c93-93896db08f4e","resolution":{"observed_at":"2026-08-14T12:33:55.325390Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.826020Z","title":null,"venue":null,"work_id":"217990da-0cca-4c00-9776-a283d279390e","year":1990},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.787174Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:ed2a5a851971685888e9f5f38b0fb9a4224a51e093c192416dad2e545e77244f","observation_id":"144426cf-0558-44e4-9fb3-83f28347f20f","resolution":{"observed_at":"2026-08-14T12:33:55.830130Z","resolver_source":"arxiv_id_nonexistent","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.cap.2017.02.019","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.309062Z","title":"& Son, J","venue":null,"work_id":"08ec001a-f96f-485d-ba73-5e9c49ce1004","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.791127Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:d8f8f8f2bd3c45028a8c72c7c99e9b05a31b6bcfca08c966b6607eba02be3fe6","observation_id":"111c9838-634d-4a89-92fa-92a8e145d0b9","resolution":{"observed_at":"2026-08-14T12:33:55.312726Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssc.201510012","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.295184Z","title":"& Yagi, M","venue":null,"work_id":"2bd5c4ec-b6c0-4c3e-84ab-08695aa2f16c","year":2015},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.795108Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:4dada1bdee9b6c437565f9682da01a302ce9e5c7292ab774635ed38346a4224a","observation_id":"9c956390-f3da-4f4f-ae37-cad1016fdbe1","resolution":{"observed_at":"2026-08-14T12:33:55.299355Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2014.09.070","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.281821Z","title":null,"venue":null,"work_id":"6a6f2cb0-dce9-4575-889b-29a602c0895d","year":2015},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.799134Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:82b7531b4849d30318983b1b5139e977fbfb5f0c2463766bf4fad1fe96bfd232","observation_id":"9ffac843-53d2-4a4f-b064-fbc37acf7562","resolution":{"observed_at":"2026-08-14T12:33:55.286256Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.803145Z","title":"& Hosono, H","venue":null,"work_id":null,"year":2002},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.803145Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:03877a7a1ab8c03dbaa0b8cdd888a60df57f9a825c62a9940628c296b394ba5c","observation_id":"cbfe5c90-e39c-4980-8ccc-7625ebca42a7","resolution":{"observed_at":"2026-08-14T12:33:54.803145Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.apsusc.2014.11.074","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.260033Z","title":null,"venue":null,"work_id":"cec3b087-b124-4ace-aba9-47fc24d1e56c","year":2015},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.807208Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:dd549da4a7655564ecc2422ca98c66fdbfd82fab651231217ab47185dab2a6cb","observation_id":"9b2f75ab-f2ca-417e-a370-666e666311a5","resolution":{"observed_at":"2026-08-14T12:33:55.264352Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.cgd.7b01791","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.246702Z","title":null,"venue":null,"work_id":"3405400b-e38e-4a6b-bbea-cd71c0647f2d","year":2018},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.811221Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:645f3d76fe75fc21c9103d9dcb4b73378997fd73d1dd74fc47dcb38707229f6c","observation_id":"cf61f1a6-b46b-4ee3-bbd5-34c2fd0f8954","resolution":{"observed_at":"2026-08-14T12:33:55.250871Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.73.094125","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.234195Z","title":"F., Xu, B","venue":null,"work_id":"8f2a90c0-4f5f-4399-b248-1b2177240d8b","year":2006},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.815199Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:7a176535fd947cdb5f734a13f9a5299537a41dc82a9996a40139797c86b1b772","observation_id":"4d96e7ee-2e8b-4c0f-9567-b1340571662f","resolution":{"observed_at":"2026-08-14T12:33:55.238357Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssc.201300259","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.222571Z","title":"D., Akaiwa, K","venue":null,"work_id":"4351a30d-138d-479b-93d3-289164868eef","year":2013},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.819252Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:900903e296f86c60cb87318b53ad30a342b50c30efd7f4c43bc17f16f80a4938","observation_id":"e682375e-2315-413d-bc2c-294929414cf7","resolution":{"observed_at":"2026-08-14T12:33:55.226182Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcrysgro.2015.12.013","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.211216Z","title":"& Fujita, S","venue":null,"work_id":"75703ae2-4324-4e9f-9f88-3f019a33771e","year":2016},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.823324Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:75e2c59c423265431113b4b8033c0765596c95cf06a02935d63168ec2adeffe1","observation_id":"90902a03-e0ea-42e1-ac2e-265fcbd35db5","resolution":{"observed_at":"2026-08-14T12:33:55.214698Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.vacuum.2015.10.009","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.197196Z","title":"Formation of various phases of gallium oxide films depending on substrate planes and deposition gases","venue":null,"work_id":"a5a01c3d-c6ea-4582-85cb-da38ef80a563","year":2016},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.827293Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:d5b4a929ae5f7071ede824fbbf1998fef9b0b04a9a57190f955f5ea3670f5491","observation_id":"51806308-99ec-49d4-9521-ff529249bc09","resolution":{"observed_at":"2026-08-14T12:33:55.202352Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcat.2013.06.025","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.184815Z","title":null,"venue":null,"work_id":"58382415-9e12-40fa-b550-228f9443003e","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.831279Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:b40704a6c687beb503b8b5a5909deb8327f80488a0a3bd2a75e63c91ca5fef0e","observation_id":"9fdc5242-283e-49d8-9533-0035e73f4125","resolution":{"observed_at":"2026-08-14T12:33:55.188881Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.667644Z","title":null,"venue":null,"work_id":"473d6a40-773d-496c-86a2-35520f2637e5","year":2018},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.835206Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:5f89258600de54d0369f9f7af4e7a4d7c941e7de8128891089db868263102add","observation_id":"8bd7e966-ec79-4143-9603-197b4a26bc6f","resolution":{"observed_at":"2026-08-14T12:33:55.671849Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/cm300712x","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.171303Z","title":null,"venue":null,"work_id":"9cb0bd47-6de8-41f5-a52f-bd69025bf675","year":2012},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.839037Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:8a0675b558c9c633d560490b3bedd378518c841bdfcc103b197835722382bbe7","observation_id":"5d68addd-ef11-4519-95fd-f1d08ed9c03c","resolution":{"observed_at":"2026-08-14T12:33:55.175552Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1116/1.4758782","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.158501Z","title":"& Biyikli, N","venue":null,"work_id":"08a532ed-5307-4698-bce1-51afff141775","year":2013},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.843510Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:e1b90073825eea07ab4fb84eb2c62d2ed3fe5d26fb2128cee152470cdf52dd5a","observation_id":"94794339-13fb-4e27-95b7-97e0c91b19db","resolution":{"observed_at":"2026-08-14T12:33:55.162629Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.tsf.2013.03.066","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.146279Z","title":"W., Chung, K","venue":null,"work_id":"06864124-cee4-43c3-a765-5200bc1dc85b","year":2013},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.847001Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:e683d7d6875d344901a2c00843b28ebb0b62fdc4c88ebc09c15fca41e323c1fc","observation_id":"4fcc02eb-0050-476f-bca8-04d39f4a0903","resolution":{"observed_at":"2026-08-14T12:33:55.150152Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1116/1.4875935","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.133637Z","title":"& Biyikli, N","venue":null,"work_id":"9e77dacc-716c-481e-a9c3-65e780c75b42","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.850503Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:0829c0d0c32bd6bbf5a0bde918b3ce860aaa029ed02a14239d814a44ac70a165","observation_id":"997b01f7-9ebd-41c0-82d1-d6b936e0f76c","resolution":{"observed_at":"2026-08-14T12:33:55.137827Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/c7dt03427j","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.119687Z","title":null,"venue":null,"work_id":"99735826-bc7a-4170-8fd8-573d5779daf7","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.854123Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:9ae8fbce9d0e4b18b85d4c15d96e36bbf0a99a3e0b4e7bb1fb79c2e1e7c2055e","observation_id":"b7093206-8bfe-4ba7-bd8e-29659a362a58","resolution":{"observed_at":"2026-08-14T12:33:55.124799Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1186/s11671-016-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.106451Z","title":null,"venue":null,"work_id":"87ad1ecc-fa84-4073-9c5f-7ec9f91a7af5","year":2016},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.857688Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:98bb7fc330df8fb66f39e59d989bb923fafe67a747a4e4bd1997c9c1db333c11","observation_id":"85aa2692-e304-49b1-920f-bc56ad9e006d","resolution":{"observed_at":"2026-08-14T12:33:55.110917Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/c4ta05007j","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.093554Z","title":null,"venue":null,"work_id":"9ca8afa0-8a0f-4943-aa94-85e034070a53","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.862647Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:1a2a43726338028051e5849700244b2db63b56079121f1a3d6a8ccce12a78895","observation_id":"124ccd0d-eb05-45d8-94c2-17ed2d8a15b9","resolution":{"observed_at":"2026-08-14T12:33:55.097678Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[{"edge_observation":{"observed_at":"2026-08-14T18:18:45.538961+00:00","source":"paper_reference_links","state":"open"},"event_date":"2014-12-02","event_type":"correction","notice_doi":"10.1039/c4ta90219j","provenance":{"observed_at":"2026-07-11T02:58:10.981742+00:00","source":"crossref","source_record_id":"10.1039/c4ta90219j->10.1039/c4ta05007j:correction"}}],"reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jcrysgro.2018.02.014","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.079243Z","title":null,"venue":null,"work_id":"2c1a2bd3-6990-493c-bb60-0a3a9cedcb31","year":2018},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.866915Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:39069ae8cdf543844869eae1a8d35193b25c0a15e2505ef02e15a7ec32f9fddc","observation_id":"818722b0-616c-43cf-a94b-cc98b9d4f456","resolution":{"observed_at":"2026-08-14T12:33:55.084285Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1491613","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.065444Z","title":null,"venue":null,"work_id":"0d3ea2d8-e624-49f6-b3a5-656711ba913e","year":2002},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.871102Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:8937d75fc832630c4e3c0a22de80bf52b5703083a93b63c3dbc2bdc1212ef917","observation_id":"0a83b02e-9c2d-4cc2-b1ff-7c5bb5932306","resolution":{"observed_at":"2026-08-14T12:33:55.069762Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.852670Z","title":null,"venue":null,"work_id":"589f6956-b70a-4b96-8963-e32715ecd61c","year":2006},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.875989Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:8322143b4d258af5281a695e5d118b89fbb5dbe726cacc7cda615e569c18d073","observation_id":"4cd95edc-a6a6-4376-81e4-966ed99daef8","resolution":{"observed_at":"2026-08-14T12:33:55.857198Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/crat.201000676","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.052486Z","title":null,"venue":null,"work_id":"126f2488-0e23-4375-a48e-8fd0843e1770","year":2011},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.880423Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:24e06e0ce85d81359aee33eb43e9c8b419d987b6c73334672cdc643c1c6bbe7d","observation_id":"6a3b334c-2416-4365-9dff-8c727363be48","resolution":{"observed_at":"2026-08-14T12:33:55.056189Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.839728Z","title":null,"venue":null,"work_id":"ce1228db-39a3-4f58-8085-6c52ef66feaa","year":null},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.884483Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:71923449cd95079d6fc5110592450bf33a84b67bcc164086f75e5963851e5d40","observation_id":"23c92d2f-61e1-479d-9840-8f0f0b43c1ca","resolution":{"observed_at":"2026-08-14T12:33:55.843953Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.5281/zenodo.583693","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.040145Z","title":"de la et al","venue":null,"work_id":"0375c43a-80a5-4518-bd0b-de8bcc58c4f0","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.888621Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:816b109402bb8fcbecd7db8c7b8dd98bda798c765e868c93279ad0e60c214596","observation_id":"e703d200-392a-4632-9362-e4621ab37fb1","resolution":{"observed_at":"2026-08-14T12:33:55.043979Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2017.04.185","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.025688Z","title":null,"venue":null,"work_id":"298560db-f83f-4a76-917e-60c16d80a2db","year":2017},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.892747Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:fbaf1cc1b36b399f74384d760c81daaffa5a4d9c4e5b483be330d7a34475d210","observation_id":"7eb219e2-eb47-40c5-a1bd-73ee51f15d50","resolution":{"observed_at":"2026-08-14T12:33:55.030402Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.matlet.2014.03.038","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:55.010922Z","title":null,"venue":null,"work_id":"48029f5b-0667-4551-89af-0405bc4cabc6","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.896997Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:c18c2344feb1991d97c16b7fd66d2f67bfc107b88874a17943accef3ea9ccf64","observation_id":"f6502b71-bd2e-4608-9916-f1d232fb16ae","resolution":{"observed_at":"2026-08-14T12:33:55.015525Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.901035Z","title":null,"venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.901035Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:a6a937f58f59484789c7931854f2f6b90b4a9be79acc6fc9c8266bcf80a0cf72","observation_id":"045eeba9-99f5-4d73-a116-b23fd0017aa7","resolution":{"observed_at":"2026-08-14T12:33:54.901035Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.905086Z","title":"& Van de Walle, C","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.905086Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:b3f574416861ce9fb738a26e973f5aae513854b14595482c238c7354a7849540","observation_id":"7320befa-3023-48b6-899a-f0441fff7349","resolution":{"observed_at":"2026-08-14T12:33:54.905086Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.909392Z","title":null,"venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.909392Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:1655b661398114efc3da40d03f17e0dee48fd510b461b8b0c8044fe30ba2be8c","observation_id":"6a2ee308-173d-4578-90e5-d5d2421e2d3b","resolution":{"observed_at":"2026-08-14T12:33:54.909392Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1427137","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.973097Z","title":null,"venue":null,"work_id":"2ec337cd-a6e5-46b4-b39b-b1ec332f5e91","year":2014},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.913395Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:addb7f489c0c94bc64004944cfbc0bf75ad0adb1a76c2e71d773d2328b15c1a6","observation_id":"2e832fa4-aaee-4ff8-8853-4cc51be83692","resolution":{"observed_at":"2026-08-14T12:33:54.977694Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/jp311300e","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.958056Z","title":null,"venue":null,"work_id":"db24dad5-04ee-4df1-a2be-702cb807f43d","year":2013},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.916972Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:e46e5ae479e62cdccfd9e922799e21b31aa272b233909a1164fcb3fa27d16cdb","observation_id":"1b167c35-a16f-4882-bbae-2d838b47a069","resolution":{"observed_at":"2026-08-14T12:33:54.963243Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:33:54.920451Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-14T12:33:54.920451Z"},"links":{"citing_paper":"/paper/1908.06914"},"observation_digest":"sha256:c2bedb2d1f07e5ed727a54e6af764561ac3f767f9ee7f20a3f47c26eaa7ad13b","observation_id":"bbdee43f-4d94-41f0-902a-26dd4dcac2da","resolution":{"observed_at":"2026-08-14T12:33:54.920451Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"1908.06914","last_updated":"2019-08-19T16:27:23Z","latest_version":1,"primary_category":"physics.app-ph","snapshot_observed_at":"2026-08-14T12:28:54.672872Z","submitted_at":"2019-08-19T16:27:23Z","title":"Low temperature growth and optical properties of {\\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition"},"reference_resolution":{"displayed":47,"state_counts":{"malformed_identifier":3,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":9,"verified_exact":33,"verified_fuzzy":2},"total_outbound_references":47},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"thesis":"As of 15 August 2026, this Paper Citation Record lists 47 of 47 outbound references and 0 inbound Pith citation observations for arXiv:1908.06914."}