{"as_of":"2026-08-16T06:58:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:d2b508b964455a43b4dff2737e23192bf93891660fe9cec549ab189ad774bc49","coverage":[{"denominator":5,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":5,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-14T12:30:59.020031Z","state":"measured"},{"denominator":5,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":5,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-16T06:30:59.297886+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/1908.07096/citation-record","integrity":"/paper/1908.07096/integrity","json":"/paper/1908.07096/citation-record.json","paper":"/paper/1908.07096"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:30:59.106703Z","title":"Figure S2 | The GPA dilatation and rotation maps along [002], [ 2-20], [1-1-1] and [-11-1] of the micrograph displayed in Figure 1a","venue":null,"work_id":"d4affd62-c0fa-4866-a4d3-ba77ceebf8e6","year":null},"citing_paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-14T12:30:59.001352Z"},"links":{"citing_paper":"/paper/1908.07096"},"observation_digest":"sha256:f1461380bbf68578d4fa93bc92a7f833b12a478c70e187c5661644b797ab69b8","observation_id":"73873a5c-b788-4a73-af33-cf97964d33da","resolution":{"observed_at":"2026-08-14T12:30:59.111124Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:30:59.078210Z","title":"Regarding ASLD, Eu atoms are characterized by a non-neglec table neutron absorption cross-section, which is wavelength-dependent (J","venue":null,"work_id":"782ede18-095d-4452-ac4e-dbeb3a38e71b","year":2016},"citing_paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-14T12:30:59.010808Z"},"links":{"citing_paper":"/paper/1908.07096"},"observation_digest":"sha256:2a467130fd9f2eaffd87231238906bcd216cbdd071ec977c9de3a13cc51a5cdc","observation_id":"56725f9b-c144-43fa-9d31-41f75ab280bf","resolution":{"observed_at":"2026-08-14T12:30:59.083437Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:30:59.063730Z","title":"The nominal sample structure for the RXRR measurements is As (20 nm)/EuS (2.5 nm)/InAs (15 nm)/GaSb (bulk)","venue":null,"work_id":"db9a8868-ebf1-4f4c-8a2f-b09e13c5b612","year":2004},"citing_paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-14T12:30:59.015060Z"},"links":{"citing_paper":"/paper/1908.07096"},"observation_digest":"sha256:8569ef0851bef39f581290109090664df4d7b8274a9551c1ba00b1aec8784f97","observation_id":"0530b39a-3c2d-4a95-a267-c03cfc796714","resolution":{"observed_at":"2026-08-14T12:30:59.069224Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:30:59.049333Z","title":"As shown in bottom panel of Fig","venue":null,"work_id":"043b4517-8be8-44fb-be06-789aed55501c","year":null},"citing_paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-14T12:30:59.020031Z"},"links":{"citing_paper":"/paper/1908.07096"},"observation_digest":"sha256:53cd1724fd018e3071e5a2da44ab39be872fcb09033dad7619fa8b3cee3f87b4","observation_id":"abaa158b-a5eb-4487-a91e-d48df7952b6b","resolution":{"observed_at":"2026-08-14T12:30:59.054459Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T12:30:59.092841Z","title":"c,d, HAADF micrograph and simulated HAADF of the proposed model through the [110] zone axis (front view)","venue":null,"work_id":"b86763e1-1894-49d6-a8d4-ff76f1096e4a","year":null},"citing_paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure","version":1},"reference_index":110,"source":"pdf_text","source_observed_at":"2026-08-14T12:30:59.006313Z"},"links":{"citing_paper":"/paper/1908.07096"},"observation_digest":"sha256:1fe5484d528b18fb6e7863fea8478e5fb25c6cc6b03f4a555c9f351e6d4db17c","observation_id":"80839fc7-39ff-41a2-abe8-48a652746e5d","resolution":{"observed_at":"2026-08-14T12:30:59.097208Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"1908.07096","last_updated":"2019-08-19T22:55:46Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-16T03:34:33.420196Z","submitted_at":"2019-08-19T22:55:46Z","title":"Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure"},"reference_resolution":{"displayed":5,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":0,"verified_exact":0,"verified_fuzzy":5},"total_outbound_references":5},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"thesis":"As of 16 August 2026, this Paper Citation Record lists 5 of 5 outbound references and 0 inbound Pith citation observations for arXiv:1908.07096."}