{"as_of":"2026-08-16T13:01:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:2b3988fbeebee207e26731529facec697f0340561120293b23c6a1cdbd96732a","coverage":[{"denominator":2,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":2,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-14T11:29:42.835500Z","state":"measured"},{"denominator":2,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":2,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-16T06:30:59.297886+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/1908.09829/citation-record","integrity":"/paper/1908.09829/integrity","json":"/paper/1908.09829/citation-record.json","paper":"/paper/1908.09829"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/ja100615r","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T11:29:42.946066Z","title":null,"venue":null,"work_id":"bb2208d9-47d2-4dd0-b0b7-93e7265614ea","year":2015},"citing_paper":{"arxiv_id":"1908.09829","last_updated":"2019-08-24T00:05:55Z","snapshot_observed_at":"2026-08-16T08:17:58.268026Z","submitted_at":"2019-08-24T00:05:55Z","title":"Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-14T11:29:42.830661Z"},"links":{"citing_paper":"/paper/1908.09829"},"observation_digest":"sha256:a424a4bf474a0305a8a90f252de07cb283940d5d66635aeeaa87ab4969937bc1","observation_id":"e724a400-eab7-4be8-9677-a05debf1ae6e","resolution":{"observed_at":"2026-08-14T11:29:42.954637Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2014.2887","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-14T11:29:42.919428Z","title":"P ‐16: The Research of Dual‐Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature","venue":null,"work_id":"d2a28262-cc7e-4f71-a058-1e1402b782d8","year":2015},"citing_paper":{"arxiv_id":"1908.09829","last_updated":"2019-08-24T00:05:55Z","snapshot_observed_at":"2026-08-16T08:17:58.268026Z","submitted_at":"2019-08-24T00:05:55Z","title":"Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-14T11:29:42.835500Z"},"links":{"citing_paper":"/paper/1908.09829"},"observation_digest":"sha256:a7b2abffdd9bb7f54b7a5196ddb16165bfc08cc489b9d875e6bfadef39e2b5a9","observation_id":"92d66b59-8361-46a0-be3a-efdbf0f223bc","resolution":{"observed_at":"2026-08-14T11:29:42.930936Z","resolver_source":"raw_fallback","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"1908.09829","last_updated":"2019-08-24T00:05:55Z","latest_version":1,"primary_category":"physics.app-ph","snapshot_observed_at":"2026-08-16T08:17:58.268026Z","submitted_at":"2019-08-24T00:05:55Z","title":"Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures"},"reference_resolution":{"displayed":2,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":0,"verified_exact":2,"verified_fuzzy":0},"total_outbound_references":2},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"thesis":"As of 16 August 2026, this Paper Citation Record lists 2 of 2 outbound references and 0 inbound Pith citation observations for arXiv:1908.09829."}