Spin Hall conductivity in Bi_(1-x)Sb_x as an experimental test of bulk-boundary correspondence
Pith reviewed 2026-05-24 06:09 UTC · model grok-4.3
The pith
Spin Hall conductivity measured in Bi1-xSbx films matches bulk tight-binding predictions across topological and trivial compositions.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
The effective spin Hall conductivity in Bi1-xSbx films agrees with the intrinsic spin Hall conductivity of the bulk bands calculated by tight-binding methods, supplying evidence that strong spin-orbit entanglement of bulk states well below the Fermi energy determines the spin Hall conductivity in these epitaxial films interfaced with a ferromagnet.
What carries the argument
Spin-torque ferromagnetic resonance measurements of charge-to-spin conversion efficiency compared to tight-binding calculations of the bulk intrinsic spin Hall conductivity.
Load-bearing premise
The spin-torque ferromagnetic resonance signal directly reflects the intrinsic bulk spin Hall conductivity without dominant contributions from the ferromagnet interface or extrinsic mechanisms.
What would settle it
Spin Hall conductivities extracted from the films that deviate markedly from the bulk tight-binding predictions, especially if the deviation changes with film thickness or different ferromagnet interfaces.
Figures
read the original abstract
Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The manuscript reports spin-torque ferromagnetic resonance (ST-FMR) measurements of charge-to-spin conversion efficiency in epitaxial Bi_{1-x}Sb_x thin films spanning the full composition range (trivial to topological regimes, verified by in vacuo ARPES). The effective spin Hall conductivity (SHC) deduced from these data is compared to tight-binding calculations of the intrinsic bulk SHC and reported to show excellent agreement, which the authors interpret as evidence that bulk-boundary correspondence holds for non-conserved spin currents and that bulk spin-orbit entanglement dominates the response even at a ferromagnet interface.
Significance. If the central interpretation is robust, the work would provide a direct experimental test of bulk-boundary correspondence in the spin sector for a canonical topological material, with the parameter-free character of the tight-binding comparison (no free parameters or ad-hoc entities) constituting a clear strength. The composition-dependent data set linking trivial and topological regimes would add weight to the conclusion that analyses focused on bulk properties remain predictive for spin Hall effects in heterostructures.
major comments (2)
- [Abstract] Abstract: the claim that ST-FMR directly yields the intrinsic bulk SHC (and thereby tests bulk-boundary correspondence) rests on the untested assumption that interfacial torques are subdominant across the full composition range; no quantitative error bars, data-exclusion criteria, or interface-isolation controls are described, which is load-bearing for the central claim given that spin current is non-conserved.
- [Results/Discussion (ST-FMR analysis)] The mapping from measured torque efficiency to bulk SHC would be strengthened by explicit demonstration that the signal scales with BiSb thickness rather than saturating at the interface (e.g., via a thickness series or control samples with fixed interface but varying bulk thickness); without such data the numerical agreement with bulk calculations alone does not rule out dominant interfacial contributions.
Simulated Author's Rebuttal
We thank the referee for their careful reading of the manuscript and for raising these important points regarding the interpretation of our ST-FMR data. We address each major comment below.
read point-by-point responses
-
Referee: [Abstract] Abstract: the claim that ST-FMR directly yields the intrinsic bulk SHC (and thereby tests bulk-boundary correspondence) rests on the untested assumption that interfacial torques are subdominant across the full composition range; no quantitative error bars, data-exclusion criteria, or interface-isolation controls are described, which is load-bearing for the central claim given that spin current is non-conserved.
Authors: We agree that potential interfacial contributions merit explicit discussion. In the revised manuscript we will add quantitative error bars to the extracted SHC values, clarify the data-analysis and exclusion criteria, and include a dedicated paragraph addressing why interfacial torques are expected to be subdominant. This argument rests on the observed composition dependence, which tracks the bulk band-structure evolution (including the topological transition) rather than remaining constant as would be anticipated for purely interfacial effects. revision: partial
-
Referee: [Results/Discussion (ST-FMR analysis)] The mapping from measured torque efficiency to bulk SHC would be strengthened by explicit demonstration that the signal scales with BiSb thickness rather than saturating at the interface (e.g., via a thickness series or control samples with fixed interface but varying bulk thickness); without such data the numerical agreement with bulk calculations alone does not rule out dominant interfacial contributions.
Authors: A thickness series would indeed provide further support. However, all films in the present study were grown at the fixed thickness required for high structural quality and in-vacuo ARPES verification of the band structure across the full composition range. The parameter-free agreement between the measured effective SHC and the bulk tight-binding calculations, which follows the bulk band inversion, is difficult to reconcile with a dominant interface contribution that would not be expected to exhibit the same composition dependence. We will expand the discussion section to make this reasoning explicit. revision: no
- Provision of a thickness series demonstrating that the ST-FMR signal scales with BiSb thickness, as this would require new experimental samples and measurements beyond the scope of the current study.
Circularity Check
No circularity: experiment compared to independent bulk tight-binding calculations
full rationale
The paper extracts effective SHC from ST-FMR measurements on epitaxial films and reports numerical agreement with separate tight-binding computations of intrinsic bulk SHC. No step reduces a claimed prediction to a fitted parameter, self-citation, or definitional identity within the paper's own equations; the tight-binding results are presented as external first-principles input. The central claim therefore remains an empirical comparison rather than a self-referential derivation.
Axiom & Free-Parameter Ledger
axioms (1)
- domain assumption Tight-binding calculations accurately capture the intrinsic spin Hall conductivity of the bulk bands
Reference graph
Works this paper leans on
-
[1]
V. Balasubramanian, P. Kraus, and A. Lawrence, Bulk versus boundary dynamics in anti-de Sitter spacetime, Phys. Rev. D 59, 046003 (1999)
work page 1999
-
[2]
M. Z. Hasan and C. L. Kane, Colloquium: Topological insulators, Rev. Mod. Phys. 82, 3045 (2010)
work page 2010
-
[3]
J. C. Y. Teo and C. L. Kane, Topological defects and gapless modes in insulators and super- conductors, Phys. Rev. B 82, 115120 (2010)
work page 2010
-
[4]
F. Schindler, Z. Wang, M. G. Vergniory, A. M. Cook, A. Murani, S. Sengupta, A. Y. Kasumov, R. Deblock, S. Jeon, I. Drozdov, H. Bouchiat, S. Gueron, A. Yazdani, B. A. Bernevig, and 16 T. Neupert, Higher-order topology in bismuth, Nat. Phys. 14, 918 (2018)
work page 2018
-
[5]
J. Weis and K. Von Klitzing, Metrology and microscopic picture of the integer quantum Hall effect, Philos. Trans. A Math. Phys. Eng. Sci. 369, 3954 (2011)
work page 2011
-
[6]
A. Uri, Y. Kim, K. Bagani, C. K. Lewandowski, S. Grover, N. Auerbach, E. O. Lachman, Y. Myasoedov, T. Taniguchi, K. Watanabe, J. Smet, and E. Zeldov, Nanoscale imaging of equilibrium quantum Hall edge currents and of the magnetic monopole response in graphene, Nat. Phys. 16, 164 (2020)
work page 2020
-
[7]
T. Johnsen, C. Schattauer, S. Samaddar, A. Weston, M. J. Hamer, K. Watanabe, T. Taniguchi, R. Gorbachev, F. Libisch, and M. Morgenstern, Mapping quantum Hall edge states in graphene by scanning tunneling microscopy, Phys. Rev. B 107, 115426 (2023)
work page 2023
-
[8]
S.-Y. Xu, I. Belopolski, D. S. Sanchez, C. Zhang, G. Chang, C. Guo, G. Bian, Z. Yuan, H. Lu, T.-R. Chang, P. P. Shibayev, M. L. Prokopovych, N. Alidoust, H. Zheng, C.-C. Lee, S.-M. Huang, R. Sankar, F. Chou, C.-H. Hsu, H.-T. Jeng, A. Bansil, T. Neupert, V. N. Strocov, H. Lin, S. Jia, and M. Z. Hasan, Experimental discovery of a topological Weyl semimetal ...
work page 2015
-
[9]
G. Ferguson, R. Xiao, A. R. Richardella, D. Low, N. Samarth, and K. C. Kowack, Direct visualization of electronic transport in a quantum anomalous Hall insulator, Nat. Mater. 22, 1100 (2023)
work page 2023
-
[10]
C. S ¸ahin and M. E. Flatt´ e, Tunable giant spin Hall conductivities in a strong spin-orbit semimetal: Bi 1−xSbx, Phys. Rev. Lett. 114, 107201 (2015)
work page 2015
-
[11]
N. H. D. Khang, Y. Ueda, and P. N. Hai, A conductive topological insulator with large spin Hall effect for ultralow power spin–orbit torque switching, Nat. Mater. 17, 808 (2018)
work page 2018
-
[12]
N. Roschewsky, E. S. Walker, P. Gowtham, S. Muschinske, F. Hellman, S. R. Bank, and S. Salahuddin, Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures, Phys. Rev. B 99, 195103 (2019)
work page 2019
-
[13]
N. H. D. Khang, S. Nakano, T. Shirokura, Y. Miyamoto, and P. N. Hai, Ultralow power spin– orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates, Sci. Rep. 10, 12185 (2020)
work page 2020
-
[14]
Z. Chi, Y. C. Lau, X. Xu, T. Ohkubo, K. Hono, and M. Hayashi, The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons, Sci. Adv. 6, aay2324 (2020). 17
work page 2020
-
[15]
L. Liu, T. Moriyama, D. C. Ralph, and R. A. Buhrman, Spin-torque ferromagnetic resonance induced by the spin Hall effect, Phys. Rev. Lett. 106, 036601 (2011)
work page 2011
-
[16]
H. Wang, J. Kally, C. S ¸ahin, T. Liu, W. Yanez, E. J. Kamp, A. Richardella, M. Wu, M. E. Flatt´ e, and N. Samarth, Fermi level dependent spin pumping from a magnetic insulator into a topological insulator, Phys. Rev. Research 1, 012014(R) (2019)
work page 2019
-
[17]
F. Hellman, A. Hoffmann, Y. Tserkovnyak, G. S. D. Beach, E. E. Fullerton, C. Leighton, A. H. MacDonald, D. C. Ralph, D. A. Arena, H. A. D¨ urr, P. Fischer, J. Grollier, J. P. Heremans, T. Jungwirth, A. V. Kimel, B. Koopmans, I. N. Krivorotov, S. J. May, A. K. Petford-Long, J. M. Rondinelli, N. Samarth, I. K. Schuller, A. N. Slavin, M. D. Stiles, O. Tchern...
work page 2017
-
[18]
A. Manchon, J. Zelezn´ y, I. M. Miron, T. Jungwirth, J. Sinova, A. Thiaville, K. Garello, and P. Gambardella, Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems, Rev. Mod. Phys. 91, 035004 (2019)
work page 2019
-
[19]
I. M. Miron, G. Gaudin, S. Auffret, B. Rodmacq, A. Schuhl, S. Pizzini, J. Vogel, and G. P., Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer, Nat. Mater 9, 230 (2010)
work page 2010
-
[20]
L. Liu, C. F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Spin-torque switching with the giant spin Hall effect of tantalum, Science 336, 555 (2012)
work page 2012
-
[21]
A. R. Mellnik, J. S. Lee, A. Richardella, J. L. Grab, P. J. Mintun, M. H. Fischer, A. Vaezi, A. Manchon, E.-A. Kim, N. Samarth, and D. C. Ralph, Spin-transfer torque generated by a topological insulator, Nature (London) 511, 449 (2014)
work page 2014
- [22]
-
[23]
M. DC, R. Grassi, J.-Y. Chen, M. Jamali, D. Reifsnyder Hickey, D. Zhang, Z. Zhao, H. Li, P. Quarterman, Y. Lv, M. Li, A. Manchon, K. A. Mkhoyan, T. Low, and J.-P. Wang, Room- temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1−x) films, Nat. Mater. 17, 800 (2018)
work page 2018
-
[24]
H. Wu, P. Zhang, P. Deng, Q. Lan, Q. Pan, S. A. Razavi, X. Che, L. Huang, B. Dai, K. Wong, X. Han, and K. L. Wang, Room-temperature spin-orbit torque from topological surface states, 18 Phys. Rev. Lett. 123, 207205 (2019)
work page 2019
-
[25]
W. Yanez, Y. Ou, R. Xiao, J. Koo, J. T. Held, S. Ghosh, J. Rable, T. Pillsbury, E. G. Delgado, K. Yang, J. Chamorro, A. J. Grutter, P. Quarterman, A. Richardella, A. Sengupta, T. McQueen, J. A. Borchers, K. A. Mkhoyan, B. Yan, and N. Samarth, Spin and charge interconversion in Dirac-semimetal thin films, Phys. Rev. Appl. 16, 054031 (2021)
work page 2021
- [26]
-
[27]
Y. Fan, P. Upadhyaya, X. Kou, M. Lang, S. Takei, Z. Wang, J. Tang, L. He, L.-T. Chang, M. Montazeri, G. Yu, W. Jiang, T. Nie, R. N. Schwartz, Y. Tserkovnyak, and K. L. Wang, Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure, Nat. Mater. 13, 699 (2014)
work page 2014
-
[28]
J. Han, A. Richardella, S. A. Siddiqui, J. Finley, N. Samarth, and L. Liu, Room-temperature spin-orbit torque switching induced by a topological insulator, Phys. Rev. Lett. 119, 077702 (2017)
work page 2017
- [29]
- [30]
-
[31]
H. M. Benia, C. Straßer, K. Kern, and C. R. Ast, Surface band structure of Bi 1−xSbx(111), Phys. Rev. B 91, 161406(R) (2015)
work page 2015
-
[32]
H.-J. Zhang, C.-X. Liu, X.-L. Qi, X.-Y. Deng, X. Dai, S.-C. Zhang, and Z. Fang, Electronic structures and surface states of the topological insulator bi 1−xsbx, Phys. Rev. B 80, 085307 (2009)
work page 2009
-
[33]
C. R. Ast and H. H¨ ochst, Electronic structure of a bismuth bilayer, Phys. Rev. B 67, 113102 (2003)
work page 2003
- [34]
-
[35]
C.-F. Pai, Y. Ou, L. H. Vilela-Le˜ ao, D. C. Ralph, and R. A. Buhrman, Dependence of the efficiency of spin Hall torque on the transparency of pt/ferromagnetic layer interfaces, Phys. 19 Rev. B 92, 064426 (2015)
work page 2015
- [36]
-
[37]
H. An, Y. Kageyama, Y. Kanno, N. Enishi, and K. Ando, Spin–torque generator engineered by natural oxidation of Cu, Nat. Commun. 7, 13069 (2016)
work page 2016
-
[38]
C. F. Pai, L. Liu, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Spin transfer torque devices utilizing the giant spin Hall effect of tungsten, Appl. Phys. Lett. 101, 122404 (2012)
work page 2012
-
[39]
T. Fan, N. H. D. Khang, S. Nakano, and P. N. Hai, Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and ferromagnet multilayers, Sci. Rep. 12 (2022)
work page 2022
-
[40]
O. J. Lee, L. Q. Liu, C. F. Pai, Y. Li, H. W. Tseng, P. G. Gowtham, J. P. Park, D. C. Ralph, and R. A. Buhrman, Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect, Phys. Rev. B 89, 024418 (2014)
work page 2014
- [41]
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.