{"as_of":"2026-08-13T10:07:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:cfdb985e02ef7e633ff881f7875ab3630a13030c5e1a3a7cb93ea9a8ceb40f32","coverage":[{"denominator":44,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":44,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-12T15:53:20.271967Z","state":"measured"},{"denominator":44,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":44,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-13T06:32:02.005865+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2411.13872/citation-record","integrity":"/paper/2411.13872/integrity","json":"/paper/2411.13872/citation-record.json","paper":"/paper/2411.13872"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.615326Z","title":"R., Shi, Y., Mahata, C., Yuan, B., Liang, X.,","venue":null,"work_id":"db00a08b-5f54-4da2-bdbd-8ac44313b2d6","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.055811Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:0cec3e2d5bae0149fb09c6917b85b3175307d01004ba672bd71bc22d8aa929c9","observation_id":"120c23c3-b9ff-4ae1-a235-9a2258f69711","resolution":{"observed_at":"2026-08-12T15:53:22.651228Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.516074Z","title":"The development of integrated circuits based on two -dimensional materials","venue":null,"work_id":"5df12b82-d1cd-40c5-967c-96bb667a266b","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.061896Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:475f4a4f1147df88ed9377fd872e40695d1c7ecbca30858e637da7c9e6985db0","observation_id":"6830a11f-cd66-46de-9f4c-5a30716fa1a9","resolution":{"observed_at":"2026-08-12T15:53:22.535345Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.501073Z","title":"Recommended methods to study resistive switching devices","venue":null,"work_id":"e5809495-f660-49b0-878e-c952931cb6b2","year":2019},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.068373Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:ffa0b5cb7a6d6779301c6d4611b87191c768582d4c3245f7d3256b2e1ff9bd6f","observation_id":"2b7451ba-211f-4f42-8294-3d39ae1e0e81","resolution":{"observed_at":"2026-08-12T15:53:22.506269Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.464792Z","title":"Progressive RESET induced by Joule heating in hBN RRAMs","venue":null,"work_id":"b55a082c-31ed-41a1-b86f-b2988e3f31d0","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.073141Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:bafe084bb693b976cc853ef1eea9ecc10e61bd6af59f9a9b0186c86b462fecdf","observation_id":"86661b9f-dc23-4fa8-b55d-11fd85c5494c","resolution":{"observed_at":"2026-08-12T15:53:22.492173Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.339633Z","title":"Advanced data encryption using two-dimensional materials","venue":null,"work_id":"165b6d58-3646-494b-baf5-4ad5cdf3d7c0","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.077388Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:baf3e0f1ecfe03f5bf7a73c883efb5dd6157522c41e029a98a9701fea666a329","observation_id":"1514e2de-f720-44a3-b424-b8c6486e3d0a","resolution":{"observed_at":"2026-08-12T15:53:22.408889Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.322852Z","title":null,"venue":null,"work_id":"f39f6782-6700-4717-bf31-0560cf09cd8a","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.082007Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:cedba8a1ced3f31debfd9400896ea14856f59ae54da2b813fdb82a5553ae0c3c","observation_id":"61760d95-4dc9-4665-84d5-b15bc13ee735","resolution":{"observed_at":"2026-08-12T15:53:22.329871Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.307999Z","title":"Electronic synapses made of layered two-dimensional materials","venue":null,"work_id":"c5312461-87b1-4778-8f4e-15f2aa623322","year":2018},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.086377Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:9c84a23a2536cc37c809c8011d86314ecf7add9d3c00787da004585c4dc1f116","observation_id":"ed34274e-9122-4047-9c2d-a9faaa6506ff","resolution":{"observed_at":"2026-08-12T15:53:22.313068Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.196103Z","title":null,"venue":null,"work_id":"44c13d46-2dd8-4419-9a66-de53d351505c","year":2012},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.110572Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:7456f921f06f7a5c38a5c5eebac93d2f00e3064f605a54ec71e3ddc804c18421","observation_id":"a85fb17c-0575-4ba4-a799-0d00b18ef5b8","resolution":{"observed_at":"2026-08-12T15:53:22.257124Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.098980Z","title":"Graphene and Related Materials for Resistive Random Access Memories","venue":null,"work_id":"ca50fc90-3127-42a4-aabf-84bf990fe224","year":2017},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.195212Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:854ace0b332fbd006b25580aa10b828d284f433e3081f853395be8db51b48306","observation_id":"c551a6d7-2195-4acf-89c4-8495b97cafaa","resolution":{"observed_at":"2026-08-12T15:53:22.103474Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.083911Z","title":"Coexistence of grain‐ boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride","venue":null,"work_id":"918c688a-9fff-46a6-affa-ef17b8a832d0","year":2017},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.280501Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:a09cb4e1c399cc5c4765a551f29c3f4a75ce30fff679e24537955844ca4148e2","observation_id":"03e87213-a09c-4233-8f6e-b622d3ffa983","resolution":{"observed_at":"2026-08-12T15:53:22.089323Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:22.061399Z","title":"H., McClellan, C., Shi, Y., Zheng, X., Chen, V., Lanza, M.,","venue":null,"work_id":"767a05f8-07db-4a0d-ad1e-91196ea07fcb","year":2018},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.325310Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:1fec7497f05a153f63cff730705811fd154588e8f89c9362f536ba257fa7a603","observation_id":"58d48b09-7d74-4839-ad46-216537fb5f51","resolution":{"observed_at":"2026-08-12T15:53:22.067210Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.952252Z","title":"Yield, variability, reliability, and stability of two -dimensional materials based solid -state electronic devices","venue":null,"work_id":"8ca428df-6fd3-457f-a3f0-c14d0f9fcd03","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.369666Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:9c0c1ce438ce8061e19c152144f7b0a3536fd0128282230620c1575c511acd6a","observation_id":"3176c949-86ed-43b3-9f9a-dea26c64ee7c","resolution":{"observed_at":"2026-08-12T15:53:22.027526Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.897178Z","title":"Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect","venue":null,"work_id":"7a8fcfb2-95fb-45b2-930b-a1563f57167a","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.387142Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:2112667c16e226d6791a8d9d803a7fca3447cbc880c76839999adb1573680b27","observation_id":"48a9b5dd-c58b-4738-9428-8731d214c05c","resolution":{"observed_at":"2026-08-12T15:53:21.903693Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.876368Z","title":"Standards for the Characterization of Endurance in Resistive Switching Devices","venue":null,"work_id":"77cbd807-1fef-4fad-b593-ea1aa6927563","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.392828Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:346b8d541bd013ec4350996f27e341482fe76f517bc351dc3c36d31f05da7bfc","observation_id":"6856a5cc-1621-4f91-9a34-0372d6bfc5e1","resolution":{"observed_at":"2026-08-12T15:53:21.887148Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.652687Z","title":"Time series statistical analysis: a powerful tool to evaluate the variability of resistive switching memories","venue":null,"work_id":"3ec0325f-fad9-4ebe-93c3-6676129c7ded","year":2019},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.396993Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:dba7a309d60ab60c41916e32d4e98d5b777626a874b5525ac1a60d59576cdffd","observation_id":"8e756558-a3d4-46d7-94ab-d6950d9a1b3b","resolution":{"observed_at":"2026-08-12T15:53:21.747119Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.604306Z","title":"A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations,","venue":null,"work_id":"3a205186-ca6f-415b-9b6a-71760ff40994","year":2012},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.400773Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:2f7347ee197521af2fe4ec7074dc3ae3f766e1972120ebcaf0abb5c0daaab81c","observation_id":"aa9308e1-5f2a-4e06-b57f-7cbb62f70460","resolution":{"observed_at":"2026-08-12T15:53:21.609852Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.590676Z","title":"Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design","venue":null,"work_id":"f287da40-7d3c-4c8d-af96-360f3587e413","year":2015},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.405240Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:c7f1d6d7d2fc7a2658dbb7f84f9de45a88fe1820cc846189a478e164ed03fe06","observation_id":"06f8d68d-0f12-4f73-bab3-f91f822e91d6","resolution":{"observed_at":"2026-08-12T15:53:21.595071Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.496146Z","title":"Robust compact model for bipolar oxide -based resistive switching memories","venue":null,"work_id":"3c570450-1610-4be3-bf10-c82c56e4e2bd","year":2014},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.409207Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:8dc8fd47bb54825cc826cb801a848b92bfdccb6551a7650a4ba218fdb7a977ca","observation_id":"425b40d7-55a2-4ca0-8d15-fd22e94199f8","resolution":{"observed_at":"2026-08-12T15:53:21.559815Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.392075Z","title":"Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications","venue":null,"work_id":"70c7598d-b045-405b-855b-2655985fd96b","year":2015},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.413133Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:4c4210bdd5bdd991dac8fc0f124ab6b38ef97e6feb2d33cc92249ac355c55add","observation_id":"3f3aa481-4da4-4022-b76e-6c9f2cf32330","resolution":{"observed_at":"2026-08-12T15:53:21.450210Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.377444Z","title":"A Compact Model for Metal –Oxide Resistive Random Access Memory with Experiment Verification","venue":null,"work_id":"2ac2e207-c4c1-48a2-a6a0-197c5a82aaed","year":2016},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.455650Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:73df05cfed15aa94edeb38943d28665ccb400b22e8861c4bf439287a9740cca3","observation_id":"08b4d4df-a23e-4bea-a294-f8fadbe9432c","resolution":{"observed_at":"2026-08-12T15:53:21.382613Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.365159Z","title":"Compact Model of HfOX -Based Electronic Synaptic Devices for Neuromorphic Computing","venue":null,"work_id":"f1c565cf-3fe7-4851-b007-dea011387d25","year":2017},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.552686Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:5d777e2880be355e9590bf7aa36c811e7f46800628209eaf66aa4ea3a3087f45","observation_id":"c91a0e25-63b3-435c-b23c-f97515e3b5d4","resolution":{"observed_at":"2026-08-12T15:53:21.369549Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.352282Z","title":"On the Thermal Models for Resistive Random Access Memory Circuit Simulation","venue":null,"work_id":"5c4e48d8-f7a6-4ccd-979b-1c706aab3924","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.631927Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:b4fb6348d17f5c1e1e1a6bc3c11029dd38a7505448ff66bda3491c9ce7591fb3","observation_id":"97b993e5-ea36-42a2-93da-2f2cf46a193d","resolution":{"observed_at":"2026-08-12T15:53:21.357175Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.327187Z","title":"Time series modeling of the cycle-to-cycle variability in h-BN based memristors,","venue":null,"work_id":"9d7b465c-20b5-4ad5-a7a5-9813a1edba9b","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.662666Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:7e9f0e3e4cb2accca704800fbf0b634809f9ce3cf3424b7b235ac75dfed14c5f","observation_id":"5cac602d-3e98-4d07-9dc2-d955df30ce78","resolution":{"observed_at":"2026-08-12T15:53:21.343708Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.293180Z","title":"Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching","venue":null,"work_id":"9781f0b9-63bb-4804-b564-592de814f8b3","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.667022Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:bbbcede91d146fc417daf2850eb72ac67b1c068252314fe85777daf3e052d4e5","observation_id":"d9c0efd9-730f-4b9a-8210-ad9013967765","resolution":{"observed_at":"2026-08-12T15:53:21.305809Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.174282Z","title":"Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO 2-based resistive switching memories","venue":null,"work_id":"184e897a-8401-444b-b3ec-ced284190c94","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.670904Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:aa499ee650c34d4aad78af8cc638044f20614f966652d7f5831e8011ea80e9cf","observation_id":"bb0a8288-5a6c-4b59-aef5-63e2f99dcb8a","resolution":{"observed_at":"2026-08-12T15:53:21.257837Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.092754Z","title":"Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective","venue":null,"work_id":"ed32e688-7440-4ca2-b69a-4213c5c93d64","year":2022},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.675340Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:45a4796096b589bb87ae50ff6a00fd6e1a10df0d476602f9b3e9b73f78f46f7d","observation_id":"77b2ebd8-dbeb-42a3-a61c-3685d2b10d35","resolution":{"observed_at":"2026-08-12T15:53:21.131870Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.060806Z","title":"Memristor variability and stochastic physical properties modeling from a multivariate time series approach","venue":null,"work_id":"4f45605b-aada-4b8a-8694-68c4287a3097","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.679956Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:c589ec93fee8fd8609b31ee827ccc716f9223f0b06136ce87ba94dd37b6ce47b","observation_id":"bbec83fc-e77b-4643-8906-c1b98f329e52","resolution":{"observed_at":"2026-08-12T15:53:21.065311Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.047619Z","title":"A Complex Model Via Phase -Type Distributions to Study Random Telegraph Noise in Resistive Memories","venue":null,"work_id":"42308844-c369-4182-ac73-4af5b10fc36c","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.684307Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:084121cd5a3f673c005055153bd0caff11f3eb390efd84f9d428c3ba8098eb4c","observation_id":"31724651-4f2f-4555-8f37-5905539c0f56","resolution":{"observed_at":"2026-08-12T15:53:21.052078Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.036839Z","title":"Non - Uniform Spline Quasi -Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes","venue":null,"work_id":"879f18ce-ceb5-4557-869b-011bb4df41df","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.688822Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:5762def775c49d63989a009c8f505a30531b368d450507586240ff93302a0442","observation_id":"47074770-e2e9-469e-a797-439538b34e60","resolution":{"observed_at":"2026-08-12T15:53:21.040506Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:21.025139Z","title":"Experimental Evaluation of the Dynamic Route Map in the Reset Transition of Memristive ReRAMs","venue":null,"work_id":"12559a80-4726-46d6-90c6-8f3db1494fff","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.692977Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:df4951df4815e4cd3f4265fb3824aa83478c8570e4b0759269dc0fbea298cad4","observation_id":"8296d277-3069-4731-8ddd-f871c75cf5e6","resolution":{"observed_at":"2026-08-12T15:53:21.029687Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.908621Z","title":"Comprehensive study on unipolar RRAM charge conduction and stochastic features, a simulation approach","venue":null,"work_id":"f20d58f9-333e-4c01-aa51-106848853546","year":2022},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.697593Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:34cea3551b21427b9c4fb8cf7959b0cd485f43170595bae895ea05d7890fee2e","observation_id":"96bc2354-34c8-454e-9d2e-42d6d7bb5fc3","resolution":{"observed_at":"2026-08-12T15:53:20.989339Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.773355Z","title":"Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology","venue":null,"work_id":"f2beabb0-37c7-400f-b8c2-d809e8e48030","year":2021},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.767326Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:6f93f185a74a1f20c487cdd37a8f04f59a3746fa80a57df44e5ea6b5a2a718b5","observation_id":"e5f1d739-50f0-44e8-9e4d-0e81014a0928","resolution":{"observed_at":"2026-08-12T15:53:20.835422Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.689109Z","title":"A 40nm 2Mb ReRAM macro with 85% reduction in forming time and 99% reduction in page-write time using auto -forming and auto -write schemes","venue":null,"work_id":"a01e0221-3160-4e88-a475-e89ce64c74f3","year":2019},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.859388Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:ca7ea225d51c85d14093ed1cebede1cd0c5bcd31ed8ec348e8e656a0faa36a62","observation_id":"0e282840-eb11-405f-b1c9-6e2ab6f6e8c4","resolution":{"observed_at":"2026-08-12T15:53:20.712614Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.677374Z","title":"Memory devices and applications for in-memory computing","venue":null,"work_id":"56ac83fc-a9a2-4b01-99d3-80b4c8fafa62","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.902514Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:2bea5ddf457e8f3b3ab422eeca044b1cd9a879ce9e1a53c7722a3271812d0095","observation_id":"3d4f9057-69ee-414b-ae1a-435c482a8197","resolution":{"observed_at":"2026-08-12T15:53:20.681541Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.665414Z","title":null,"venue":null,"work_id":"c95accda-122f-44dd-adee-eb4c103f4149","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.907412Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:686497dc5e2eb439d18eb09f29954ef348c30fc382aaaa1128f12a0a5e29d124","observation_id":"d23ab00e-49ee-4d93-9678-57e696724f48","resolution":{"observed_at":"2026-08-12T15:53:20.669302Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.652788Z","title":"Hardware -intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors","venue":null,"work_id":"3f83ed5c-91c3-4749-b7f6-dab74754faf8","year":2018},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.912126Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:ee6b9e88fba365a53064feec2bc9cd661457e98696adeac90a069105759425dd","observation_id":"bb935367-e570-4131-8462-b04ded50c3ba","resolution":{"observed_at":"2026-08-12T15:53:20.656886Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.639938Z","title":"Memristors with initial low resistive state for efficient neuromorphic systems","venue":null,"work_id":"57aa4831-0bfe-4fda-8fea-e0ea94f1042d","year":2022},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.918260Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:dfa1ead3fd41c3422e0d0a8174e46621efe5087f61ffbe30f88c026e20d7c801","observation_id":"3154d6a2-0ad7-4591-ba44-384462ec6660","resolution":{"observed_at":"2026-08-12T15:53:20.644953Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.626915Z","title":"Analysis and modeling of resistive switching statistics","venue":null,"work_id":"44ccdf89-58e7-437d-956b-d87b464c4ca6","year":2012},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:19.951586Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:f2f1db6d22d70aa92f6c3d25793c858b73d08c3924986928eb655ca89b457ac0","observation_id":"31c3a87d-6bf3-4da5-8d22-da9a71e03a9f","resolution":{"observed_at":"2026-08-12T15:53:20.631559Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.558103Z","title":"Resistive Switching in HfO 2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach","venue":null,"work_id":"85ce1e0e-9ff5-48f7-85e7-f5a3ef623a8c","year":2020},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.013713Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:b5f69f655567b2c199a4d508eee0a9edcaa59e7f7d2c36e17f97eac63faad620","observation_id":"ff01c36e-19bb-4291-94e1-0278b342c41b","resolution":{"observed_at":"2026-08-12T15:53:20.586630Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.467110Z","title":"Exploring Resistive Switching based Memristors in the Charge -Flux Domain, a modeling Approach","venue":null,"work_id":"abc6e7dd-148d-4d24-8155-5f312566b981","year":2018},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.105823Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:987244ad5749036bb859e3d67b9d53215fb9d91ee17cdee7c1e2e696db2adc0b","observation_id":"faadf6e1-87a0-4da3-967f-ed370541d7cb","resolution":{"observed_at":"2026-08-12T15:53:20.506915Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.363995Z","title":"Introduction to Time Series and Forecasting","venue":null,"work_id":"41254bef-43b1-4f2c-94b0-66eb725b3523","year":2002},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.186480Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:f2f46b1b24b13bd649e9994db988ae1a780776446c85c7b2aa9e53fec5272ac5","observation_id":"291a97c3-154d-44a6-8327-bd1af057965c","resolution":{"observed_at":"2026-08-12T15:53:20.423984Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.333201Z","title":"Time series analysis and forecasting by example","venue":null,"work_id":"3adccd13-0b41-447d-970d-f247cd29c662","year":2011},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.241379Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:e1614794f357095b34f292c06f636186f1b130d630d8f864569cbb2ecb185bc0","observation_id":"a3ee4115-88af-4581-bfb8-5f68de8c40bc","resolution":{"observed_at":"2026-08-12T15:53:20.337234Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.320811Z","title":"Resistive switching devices producing giant random telegraph noise","venue":null,"work_id":"7a5307f4-555f-4cbb-b282-ea507d6a0caa","year":2022},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.268553Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:9461d7b7f0fb8555fa997540ce17932d13fbfd5b76ff1a847de711f92f096f60","observation_id":"a5616279-c7aa-4cc8-876f-b596debcc65c","resolution":{"observed_at":"2026-08-12T15:53:20.325211Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-12T15:53:20.303415Z","title":"Excess entropy and thermal behavior of Cu- and Ti-doped bioactive glasses","venue":null,"work_id":"559133c2-2b64-4557-8f10-cb8f65c1b2c2","year":2014},"citing_paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-12T15:53:20.271967Z"},"links":{"citing_paper":"/paper/2411.13872"},"observation_digest":"sha256:1fb45465b99347837dd305e9e908d225d1bcef8d6e6eb19b8b54138f13d67b7a","observation_id":"69409ae0-3289-4afd-9721-aae9b96c3d99","resolution":{"observed_at":"2026-08-12T15:53:20.310021Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2411.13872","last_updated":"2024-11-21T06:09:45Z","latest_version":1,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-13T09:55:17.783760Z","submitted_at":"2024-11-21T06:09:45Z","title":"Modeling the variability of memristive devices with hexagonal boron nitride as dielectric"},"reference_resolution":{"displayed":44,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":3,"verified_exact":0,"verified_fuzzy":41},"total_outbound_references":44},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"thesis":"As of 13 August 2026, this Paper Citation Record lists 44 of 44 outbound references and 0 inbound Pith citation observations for arXiv:2411.13872."}