{"as_of":"2026-08-13T12:31:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:8304cc624b578ae484c2ff86a54da612af33e45465196b7cf8e4aae6b7d6172f","coverage":[{"denominator":22,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":22,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-10T23:01:26.650002Z","state":"measured"},{"denominator":22,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":22,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-13T06:32:02.005865+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2501.00336/citation-record","integrity":"/paper/2501.00336/integrity","json":"/paper/2501.00336/citation-record.json","paper":"/paper/2501.00336"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.527379Z","title":"& Senoh, M","venue":null,"work_id":"f5510a00-9934-4098-b1d6-be5282525a54","year":1994},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.456939Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:3acac2dbdd098bf95a45f86cb84cb864cb20e18e2d723db7bd6c5467753c366c","observation_id":"61f70a87-31c2-4574-bd3e-82e89bd361b1","resolution":{"observed_at":"2026-08-10T23:01:27.533931Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.497226Z","title":"A., et al., Illumination with solid state lighting technology","venue":null,"work_id":"51d86c9b-a338-4bbf-a9a0-9e8de41d15e8","year":2002},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.466901Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:c300355f9edb7febfe89a5644656c2dbd07836d722406b66a5a4d1828fc02bc0","observation_id":"98a7147f-33aa-4173-8922-a699a192b867","resolution":{"observed_at":"2026-08-10T23:01:27.503725Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.468065Z","title":"& Ploog, K","venue":null,"work_id":"3b0c2038-b2b4-4346-bdca-956d02b6cac4","year":2006},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.475848Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:6367b17dae36a9e121f01b2141bb6924eedbd28eb6a2b2cb6c4a03b5dc382d3f","observation_id":"388c8193-dac5-4ab1-a5ee-61f2c34fe9b3","resolution":{"observed_at":"2026-08-10T23:01:27.476193Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.434439Z","title":"& Makimoto, T","venue":null,"work_id":"9948fa5f-6f1b-42a0-b480-3fb09310b59e","year":2006},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.496546Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:7790687930204c1c275798a885637e0a9a72e874802a1e7b5e2fdddd4b0b091a","observation_id":"b9110e32-18cc-4181-b1bf-2edb9edd2289","resolution":{"observed_at":"2026-08-10T23:01:27.442004Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.390322Z","title":"& Katona, T","venue":null,"work_id":"53d119a9-ab6d-4a56-bf45-69a5485758ec","year":2008},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.504328Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:dc5fa484173dfbd545fd7510c68f21f871a2b424d749300a9426bcf0428c284a","observation_id":"87e7cfe5-da35-4b02-81e4-2d49429d84ab","resolution":{"observed_at":"2026-08-10T23:01:27.403157Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.336336Z","title":"MRS Bull","venue":null,"work_id":"3c740d55-1360-42d0-b358-5e0c59daee9f","year":2008},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.510830Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:8ad2aaf8ee077270e57a5ae9c714680c72e0284e58aeeadaa66bb411f85de4cd","observation_id":"0cfffa2c-8614-4110-a537-e305f22f744e","resolution":{"observed_at":"2026-08-10T23:01:27.350562Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.287063Z","title":"Laser Photonics Rev","venue":null,"work_id":"82b596d3-15c2-47a5-9b69-62c6a74f9a63","year":2007},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.521467Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:ec4b868a48e0e399680b8e9d44670b1eb65f90e8c3347e35d4032f5f2e8ac914","observation_id":"241434b3-9815-4393-b321-16dcb803a257","resolution":{"observed_at":"2026-08-10T23:01:27.302545Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.235856Z","title":null,"venue":null,"work_id":"d1df269a-d6cd-412f-b1b3-413ae46b81c0","year":2001},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.529763Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:2d90caf13e7a74f27c998d6407ac711193ddd3b777b20664dfd9f1cada3c8651","observation_id":"564ae700-80f9-40d6-9ddf-c217a8148550","resolution":{"observed_at":"2026-08-10T23:01:27.248991Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.198589Z","title":null,"venue":null,"work_id":"843d5a62-733f-46a3-8011-3cae51a5f84d","year":2007},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.538493Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:6d863fed379270a21558baaae020d1fe89a97c5c57a3bf77843b3b98323adf39","observation_id":"4ee8a626-45d3-42d0-a042-a20cd1fdbb55","resolution":{"observed_at":"2026-08-10T23:01:27.211245Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.164830Z","title":null,"venue":null,"work_id":"7750daec-478a-47c0-9a8d-9c86c09de202","year":2007},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.549797Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:f339345443bce59491ebc4b76f70b018ed6af8e79d064f78a49c1264759d7cfa","observation_id":"e2ee90e3-ca79-4cb3-bbf2-db55387ce967","resolution":{"observed_at":"2026-08-10T23:01:27.172133Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.127294Z","title":"Lee et al., On carrier spillover in c- and m-plane InGaN light emitting diodes Appl","venue":null,"work_id":"9deddf78-3f0a-4436-b08d-1f32ba832527","year":2009},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.555243Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:9aa3dbecbd4edbe21340afaedbd8db241a07917e9fd3738276c688f624ba843f","observation_id":"396071d7-2126-4df3-b4ce-59ef6ef017dc","resolution":{"observed_at":"2026-08-10T23:01:27.140453Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.098986Z","title":null,"venue":null,"work_id":"17189fe0-90ab-4fe4-8932-9c52a6963996","year":2010},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.564010Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:0d147d128e8e4d7fd16eba8759b27658645664ebaf2c36c7733fc3e1c4abf001","observation_id":"788e35f5-0d3c-4963-9095-7e5a03438200","resolution":{"observed_at":"2026-08-10T23:01:27.109596Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.056220Z","title":"et al., InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes","venue":null,"work_id":"0ef69227-c70c-4369-8e2e-b69484c05bfd","year":2010},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.572964Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:7c3a164a3a5450cffaf99be55a6eb562359725579a3f6a7baac42a130ea08f3d","observation_id":"596471ff-371a-478f-9196-bef2d40fc8cd","resolution":{"observed_at":"2026-08-10T23:01:27.073769Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:27.023319Z","title":"S.et al., Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes","venue":null,"work_id":"6ccc42a8-3d78-45d0-b84b-540c59719dcc","year":2011},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.578921Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:1defc85c0f7fecaf68279c5a43856ac5e44b5de04409d98c074d183903666009","observation_id":"267126c8-3c62-42f1-8738-aba732005c53","resolution":{"observed_at":"2026-08-10T23:01:27.032885Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.933897Z","title":null,"venue":null,"work_id":"63ef62cd-a710-4f21-bff6-c02108974a0c","year":2009},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.593310Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:0a2af1bde184e7cff6eeee2ac8a9ee1f76e1f67dd3a38e95197a92e2d4f9cc09","observation_id":"d6eca504-f241-4b2b-885c-309e7de73d3f","resolution":{"observed_at":"2026-08-10T23:01:26.947623Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.902960Z","title":null,"venue":null,"work_id":"50cd48ad-472c-4bbb-bb5f-a6767503bb08","year":2010},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.600677Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:df9f63ee6d0c19cb2b7a485c340f97d55afee659509b96587da135be052f3ef4","observation_id":"7cba3b39-fccf-4fe7-9ffd-9a88d4afd390","resolution":{"observed_at":"2026-08-10T23:01:26.911192Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.975401Z","title":"et al., Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes","venue":null,"work_id":"6b426be8-fa40-4cba-8b63-34f6d5af4e2b","year":2011},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.608772Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:2090066d94c38708d800c73d305c292934f280f6f90e85dd29567ce8c26cc1a2","observation_id":"469ec4e1-d588-4a11-84a2-a4ec0b512699","resolution":{"observed_at":"2026-08-10T23:01:26.989889Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.851456Z","title":"& Bellotti, E","venue":null,"work_id":"22a1a36a-5b50-40ad-b441-2f53ecd5c8b2","year":2012},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.617344Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:5b0f5037d71f08dd41ce5411ed0a1faad203d17aa90a3eeda1af5423c0013cd7","observation_id":"8f6e098e-7a49-4277-87e8-8d9adb5e23ca","resolution":{"observed_at":"2026-08-10T23:01:26.864515Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.824952Z","title":"V., & Koch, S","venue":null,"work_id":"f8fdce7f-3a21-48c4-a739-bf3531a6083d","year":2011},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.625527Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:5e76e3eeed763ec9f50bfd09ad4a60a97a766a732a1fffca244aa8fe5a723701","observation_id":"fda129da-7611-49f2-bd22-0ac485d9de4b","resolution":{"observed_at":"2026-08-10T23:01:26.834389Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.781296Z","title":null,"venue":null,"work_id":"74e6f4a3-7ae9-4b87-ac97-c649bf523a43","year":2001},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.634056Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:4f4c2c89591d77a1a9ba8edda8a95f32b2721a13bc93ae024bbb1853d5a8f926","observation_id":"6a598568-0a49-4116-b2bf-a509751f2c8e","resolution":{"observed_at":"2026-08-10T23:01:26.791997Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.744586Z","title":"et al., Surface-plasmon-enhanced light emitters based on InGaN quantum wells","venue":null,"work_id":"5b955b84-6259-43c4-82d7-318b129c3901","year":2004},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.640282Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:6fc062e794d0b9a0cfb6d3896d5482aa49a510a48c7f74afa11b8db50061edae","observation_id":"41e5b67f-7c37-42d2-b302-36f19011697e","resolution":{"observed_at":"2026-08-10T23:01:26.753422Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T23:01:26.712900Z","title":"et al., Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes","venue":null,"work_id":"23ae21ec-8188-4dda-b0da-5db83aaee74b","year":2013},"citing_paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-10T23:01:26.650002Z"},"links":{"citing_paper":"/paper/2501.00336"},"observation_digest":"sha256:d363c4b30cdab203d5173a749fc156e56f40031f0d14285ee97a2a353d691513","observation_id":"7bc667ae-3ecc-478a-9a6b-ff23eba15920","resolution":{"observed_at":"2026-08-10T23:01:26.725606Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2501.00336","last_updated":"2024-12-31T08:15:33Z","latest_version":1,"primary_category":"physics.optics","snapshot_observed_at":"2026-08-10T22:51:04.076573Z","submitted_at":"2024-12-31T08:15:33Z","title":"Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity"},"reference_resolution":{"displayed":22,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":7,"verified_exact":0,"verified_fuzzy":15},"total_outbound_references":22},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"thesis":"As of 13 August 2026, this Paper Citation Record lists 22 of 22 outbound references and 0 inbound Pith citation observations for arXiv:2501.00336."}