{"as_of":"2026-08-15T00:13:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:f720e1a6c6a2e213aa2a7badc5f6ebd9da70237044e1b030246c939d0569847d","coverage":[{"denominator":79,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":79,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-10T20:54:05.202432Z","state":"measured"},{"denominator":79,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":79,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-14T06:32:32.682623+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2501.06754/citation-record","integrity":"/paper/2501.06754/integrity","json":"/paper/2501.06754/citation-record.json","paper":"/paper/2501.06754"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.294237Z","title":null,"venue":null,"work_id":"bcd2901c-4dd1-4129-9e19-833ea51af70e","year":1989},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.124372Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:de44f66b77720a91480fc14498c901cbd7558f74fe0098a29e57cbc522a33cb1","observation_id":"8e4673c4-c7d2-4184-a85c-3e4481883c6c","resolution":{"observed_at":"2026-08-10T20:54:09.304981Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.235659Z","title":null,"venue":null,"work_id":"615ad125-9267-4f79-92a3-404dc6ec3172","year":2024},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.142014Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:252151df283ee39f45e1da70f44d5dd0040da85090b8fd59ca3b2b413aefa1a2","observation_id":"b1eb70b5-65de-4809-a278-02b90ff52074","resolution":{"observed_at":"2026-08-10T20:54:09.254055Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.166332Z","title":"Schroeder, M","venue":null,"work_id":"ca82dc45-3969-4da4-af9b-0f47ba651867","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.154968Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:4daf3287fb0f0d5bef9dcd9434c5a0aca1992fce8778226e9404015352b04b27","observation_id":"f41ec7c1-6a69-4be4-a042-72cea0d0dde9","resolution":{"observed_at":"2026-08-10T20:54:09.176826Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.100651Z","title":null,"venue":null,"work_id":"00f60332-0431-4d52-bc1c-ecac5b14ea00","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.171140Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:88bcb90421dff5bdfe55eff435a4196c3f9f3889e23bd09913806a6ca1f126a1","observation_id":"232a5bd3-f796-4eda-b0b4-190d5814c281","resolution":{"observed_at":"2026-08-10T20:54:09.110062Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.048056Z","title":"Hoffmann, S","venue":null,"work_id":"851934e8-311b-4995-9790-632c7236eb12","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.183393Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:c4f1ec48a835ae6261c54db0d9f1cedc78688661e234cb8f816fde22068e3ce8","observation_id":"61f15a5f-e5cc-4abf-bdab-6f6a4d5d09ba","resolution":{"observed_at":"2026-08-10T20:54:09.059751Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:09.020173Z","title":"Íñiguez, P","venue":null,"work_id":"db5ef7c7-0589-4aed-a43b-1371bad332ca","year":2019},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.192352Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:fb3abf41a85861838363b5e5cbb93188ceb072be5ba029426a9dfd4c036f741e","observation_id":"1f55d3d6-322a-4447-819f-3cc42fa543e7","resolution":{"observed_at":"2026-08-10T20:54:09.027667Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.975084Z","title":null,"venue":null,"work_id":"958488b8-56a8-4065-81cb-107676f4e110","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.202734Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:807de0fdf63102dbddfc32f3521778663437b6666ab6c814862e165a263ef540","observation_id":"0df57b26-c947-450c-a9ca-c3f473a7fb1c","resolution":{"observed_at":"2026-08-10T20:54:08.992212Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.929184Z","title":"Mikolajick, M","venue":null,"work_id":"3e7cea0b-76fc-4584-82f7-95f6b796e97e","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.214382Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:020c90d1dd84735bcf1100991da5a4a1d0bb1c7e0098cde6282bc0d63bce7f02","observation_id":"24aecf3e-e07f-480f-839e-8bc031731921","resolution":{"observed_at":"2026-08-10T20:54:08.937184Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.889220Z","title":null,"venue":null,"work_id":"315bb4b8-eca2-45ee-8c25-a914bfdd1438","year":2011},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.229017Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:9c55b9e752deca9234a1520b7014bcc3429687a4a9ed1965e5b7ef04a001ea58","observation_id":"8f74d100-d7ac-4c60-a6a8-aba4f01a576c","resolution":{"observed_at":"2026-08-10T20:54:08.896014Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.843786Z","title":null,"venue":null,"work_id":"3267a16c-8808-4518-9915-74af3467621b","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.238091Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:8e0a3013a33f26d9c2f105971efc016e334a97710ddd2f6f0c9a55c53a79d3a0","observation_id":"155c6316-3e1d-44ac-a417-0c712a8e82ca","resolution":{"observed_at":"2026-08-10T20:54:08.858434Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.794148Z","title":null,"venue":null,"work_id":"b2d4a285-9afe-47db-b3b8-22994fe7cec9","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.246507Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:27471a3fb6dacb52d02c558bfad83b64e1608f337dfdc5714376ef3cb55d0dbb","observation_id":"1bd724ac-418a-4d91-a14f-38bf49113bf5","resolution":{"observed_at":"2026-08-10T20:54:08.808871Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.771260Z","title":null,"venue":null,"work_id":"479fc6ac-d219-4a5d-88c4-5815ff9d017e","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.254255Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:228f3b20c17766791d9adff5c1720b1dd3ad9d9721bb0b9ff6e432f3a297c191","observation_id":"e9abd124-1ede-475c-84be-976769dfdf1d","resolution":{"observed_at":"2026-08-10T20:54:08.778984Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.740078Z","title":null,"venue":null,"work_id":"7a678e20-37d4-468e-b7bf-6d1ca9fdd0a1","year":2018},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.266766Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:b96b96c971b76a9c5d908e77a099487609a4d38f668c7a5d47dafdb80fa03774","observation_id":"e4b451ab-bacb-42a5-8a88-f57fcb4d6d32","resolution":{"observed_at":"2026-08-10T20:54:08.749168Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.705271Z","title":"NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near -DRAM Performance for Demanding AI Workloads","venue":null,"work_id":"24eb2045-e2aa-400c-b2d2-aec6ae14114b","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.279970Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:510944d9c87ef166b7a777ea1c478be201d3ec07e1cf4316a620d610224d4829","observation_id":"568bc5e8-e7e2-42f4-a519-d6ca7a7bf83d","resolution":{"observed_at":"2026-08-10T20:54:08.715250Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.666564Z","title":null,"venue":null,"work_id":"bab700e3-4831-4754-9194-efe06bee49f4","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.290325Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:bdb93020be4f78e9515f5587e3929f54aa82fd1e78b8c9f080dff34ff5f1d640","observation_id":"faf1f46c-19c3-4ab9-be3c-82510bb6a62d","resolution":{"observed_at":"2026-08-10T20:54:08.672709Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.611286Z","title":"Salahuddin, K","venue":null,"work_id":"73989c01-30f8-4e17-8409-7e4e67f64763","year":2018},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.298204Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:18e3d23c120e2625856c1e3bc4655bcf754d489236bb1dd3134ffe4bf2fa61b8","observation_id":"cde14a74-0a0e-4348-94e4-2dc90d53d201","resolution":{"observed_at":"2026-08-10T20:54:08.624185Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.563905Z","title":null,"venue":null,"work_id":"8f0ede58-cc95-40d4-89ab-650b0dd9fc07","year":2024},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.307444Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:dd9e67fb7e697a64741893a12300246e5816d7c0ddba165dd3cd733bab813336","observation_id":"1a35b43d-9054-4e4e-b7e8-83da83ace961","resolution":{"observed_at":"2026-08-10T20:54:08.574326Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.518998Z","title":null,"venue":null,"work_id":"6ae82bd2-07c2-4725-ae17-2db439a06c76","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.313181Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:0dd7d7ef1bdd87abfac9bd6f6def4d8fb61537c755b971669a280bcd47da706e","observation_id":"65ce1061-6f13-4dc6-bf77-012047314278","resolution":{"observed_at":"2026-08-10T20:54:08.533100Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.466762Z","title":null,"venue":null,"work_id":"8b5c8abc-2f91-40e8-8455-09fcf0f558f7","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.331412Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:fc49dcdd493e1cef566ab40e77e9432edd19ea838e9edb704ff2858bdf19a79e","observation_id":"17994769-ad24-4308-b964-256730fbf932","resolution":{"observed_at":"2026-08-10T20:54:08.474064Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.437980Z","title":null,"venue":null,"work_id":"556ce926-6185-4eeb-af08-2428c3703f75","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.342340Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:cdcca3ca8d510edd583880dedbe1628e0b630a551f9ca5ea3dae333448d0b0ea","observation_id":"a0041984-d851-4259-baf8-012b5db9446d","resolution":{"observed_at":"2026-08-10T20:54:08.443208Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.411399Z","title":null,"venue":null,"work_id":"3a646f0f-d6ec-4765-b765-75dc8da18ba8","year":1995},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.350041Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:2b937553f9ac46cae837640ba4bae89a4095199643c3979b6438fac8d17563c4","observation_id":"0a617f9e-7767-4854-bdc8-55e91c2fdc7c","resolution":{"observed_at":"2026-08-10T20:54:08.419178Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.323088Z","title":null,"venue":null,"work_id":"8c4af80e-93bb-452a-bc29-61544228432d","year":1999},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.364077Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:3077ae5aa2abf721c1248c4a4338659595dee2dae32f712b3f465ca3fb75803e","observation_id":"c72faead-5d5c-4312-b82e-deeb1057e49b","resolution":{"observed_at":"2026-08-10T20:54:08.347806Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.267259Z","title":null,"venue":null,"work_id":"528d01a8-ecf3-479a-a178-c1e5f0cbc24b","year":2001},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.376719Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:8922ec8e19e35eaf9959fa9732fbf8f09e4bc6f4973e0c4ff92ea553d4c70527","observation_id":"dfe9343f-eaa8-45d4-89cb-75fca8656e1d","resolution":{"observed_at":"2026-08-10T20:54:08.286878Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.233985Z","title":"Ramesh, H","venue":null,"work_id":"5df73673-558b-414b-86b3-0bcd86524afb","year":1993},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.395559Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:a7bc7d95210a3ca7813fde8bb51232c9245ef85edb4186215d5bd36b93c8ca38","observation_id":"92ff75db-62a2-4c59-8453-894cdeebe073","resolution":{"observed_at":"2026-08-10T20:54:08.242679Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.211019Z","title":null,"venue":null,"work_id":"66af8958-819e-4ff3-ac92-a459f2ddaa2d","year":1995},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.410338Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:2a75a2493b9f2742162f54b86b0ef73f1cc6a9d46b3d10dcfb055dda6a77a3e1","observation_id":"832786b0-2475-4d7b-8628-c2f97279e18c","resolution":{"observed_at":"2026-08-10T20:54:08.218698Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.138676Z","title":"Pešić, F","venue":null,"work_id":"c16328ec-0508-4920-aaae-0c56e323cd70","year":2016},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.429379Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:b6a9b0778397be6549aa2ded51ede8dd086c8da0456ab428e0078b4b3316bb45","observation_id":"db31607e-79d0-4ac9-8ef2-99518dae6fa0","resolution":{"observed_at":"2026-08-10T20:54:08.154105Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.091651Z","title":null,"venue":null,"work_id":"7401726e-5475-4a45-8716-30e75ad35b8f","year":2001},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.446095Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:506ebdd9d5676235fd8279ee72b87d081cb1995e35a07d6ed6ec53ce48ff5a1d","observation_id":"3e914777-ec3a-4444-aff5-70a9e134cd4a","resolution":{"observed_at":"2026-08-10T20:54:08.111452Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.064078Z","title":"Nukala, M","venue":null,"work_id":"d969448f-76fc-4021-bd4e-878c3a1f2cfa","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.460990Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:092a8479f97d117caf85abdc367b7dda53259f0dcd949ec31165fb06ea9feb62","observation_id":"cc36ee6c-a46c-4ab8-a75f-02b552d3a99f","resolution":{"observed_at":"2026-08-10T20:54:08.070360Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:08.017990Z","title":"Noheda, Lessons from Hafnium Dioxide-Based Ferroelectrics","venue":null,"work_id":"1be6f1c8-0de7-4e6e-a1ad-38aa5899ae9a","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.475005Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:00bac6fe9b698a8c4d83d7c5b26bba3763280ff724742ea52c6b695ac7f92ea4","observation_id":"73edfc87-4a45-455d-83c9-7dccaf741606","resolution":{"observed_at":"2026-08-10T20:54:08.032895Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.912919Z","title":null,"venue":null,"work_id":"5f0ebfd5-e0f0-423d-8c8e-b9ffee02a0bd","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.499366Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:a6f06b0f666f111b31c421699c15d191f84466a04fcc9756d96fa6a6185ddf78","observation_id":"9570c2de-d574-443c-9566-f6099f2d65ae","resolution":{"observed_at":"2026-08-10T20:54:07.938180Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.838607Z","title":null,"venue":null,"work_id":"ec3bab77-cd34-4b58-a1c7-09129ea21831","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.506216Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:70bff56d3a9802f66c37437680d554c06402fc72f2f6bf04b75eef025739dbf6","observation_id":"6a254460-6141-4272-881c-0bf326af7c97","resolution":{"observed_at":"2026-08-10T20:54:07.867815Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.754323Z","title":"Alcala, M","venue":null,"work_id":"fdf8c06f-d93b-4478-b17c-e96ecbce3e8e","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.520957Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:566cdc37525047a6fe70c71cbd4f4e4c5f6b9ae9f638a004fe179d5643addbdf","observation_id":"414aa811-be52-4b9d-97f0-97ce0a9a2e12","resolution":{"observed_at":"2026-08-10T20:54:07.776912Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.698642Z","title":null,"venue":null,"work_id":"2ace6c7d-6925-43bc-8c1b-04976c7429b8","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.532442Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:86a17c4d91380075706fc09db2b080ee94c170321c8b890e32298679966b7205","observation_id":"0f184de6-305a-4198-945a-6b3f9ef66c82","resolution":{"observed_at":"2026-08-10T20:54:07.712507Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.665150Z","title":null,"venue":null,"work_id":"7fd7c01d-2ea9-45d4-bbab-06f0087980d3","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.545182Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:9c1ff1b2a921e9412e68e188b826092e8e7f5933e784e97b71d2c6eed6d8c6df","observation_id":"02018446-4c22-40a1-8d25-75da02339cae","resolution":{"observed_at":"2026-08-10T20:54:07.674289Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.626769Z","title":null,"venue":null,"work_id":"e6170dc2-414b-4209-809d-5a7070d41feb","year":2007},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.554945Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:187eb6067449a2d6bd5ad8f3568555ffba07f456faca8b0b17bb00ce24edde79","observation_id":"ad0aae1c-7365-4f74-a44a-f56b772b3ed2","resolution":{"observed_at":"2026-08-10T20:54:07.641769Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.580110Z","title":null,"venue":null,"work_id":"73cca0db-8fa2-4670-b7c2-61a86cf15e53","year":1999},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.571455Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:4046de893fb64462570d1ffd668254b718f66840dbe01c92ce8c1d582faaf4fb","observation_id":"47d3f301-0a75-4004-938a-f090f35053ce","resolution":{"observed_at":"2026-08-10T20:54:07.594134Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.545666Z","title":null,"venue":null,"work_id":"7699000a-157c-4d65-8d22-38b8c278d543","year":2017},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.585445Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:01363cd9e847b002c8def3304725b0a47c001f01c5fc402cf7abf8ee5c24aeec","observation_id":"9ae16be3-a627-4448-82a9-9d749b02657a","resolution":{"observed_at":"2026-08-10T20:54:07.551259Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.513909Z","title":null,"venue":null,"work_id":"1207f34e-6a3f-4873-b371-3d1ec367bd67","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.605192Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:4407dec88228b6a77ec7328b468359b4cb0e5c51f0f5e5bc465b23a4c79fac55","observation_id":"66b9d10e-1e03-44fb-a4cd-2b6e7a0aac7c","resolution":{"observed_at":"2026-08-10T20:54:07.520110Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.449797Z","title":null,"venue":null,"work_id":"51c96d2f-9f4c-49ca-8e61-ad322eaaf5b6","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.626951Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:21263413248474d35b2fe240affaa645c4633f76bea7988d59300a8c51fc2fdb","observation_id":"dd0a1944-0984-4736-97cb-8b61dd72c31d","resolution":{"observed_at":"2026-08-10T20:54:07.461357Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.408655Z","title":"Yamamura, S","venue":null,"work_id":"49aa69c5-8bea-473f-95d2-71daee8327c9","year":2007},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.641059Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:63b52c2cea62299049719c8f04b415a95bdbc86d43289ce82c771eb149810b4e","observation_id":"92519420-667c-402d-8c2e-c2e336fea5e8","resolution":{"observed_at":"2026-08-10T20:54:07.427504Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.327178Z","title":"Zhang, I","venue":null,"work_id":"747a6de4-0b4d-4230-b465-8a9a057c8281","year":2024},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.665653Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:5841d6fb90da5f84ed5c26612cc634f7dec063b7b4a1ce0ff0a747d128c9f516","observation_id":"8ac4dba5-18cb-4be6-8b07-1e0dc09f0d95","resolution":{"observed_at":"2026-08-10T20:54:07.337581Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.272711Z","title":null,"venue":null,"work_id":"7ca5c113-7ecb-48f8-bb79-7cf1a6b2f3e2","year":1992},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.679650Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:c9faf4ac2f17612a372693e03c1d1b24e25f36c9eff3c09c26ed0c203a845b84","observation_id":"a4d2c026-e460-4239-96e3-cd17239161ce","resolution":{"observed_at":"2026-08-10T20:54:07.283617Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.200702Z","title":null,"venue":null,"work_id":"7c0dfe19-055f-42da-af27-61c9b6a43fa8","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.692478Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:950889593b6d6310866a624faf0fc82e23c62056f085bfc7a7642380657e9174","observation_id":"807c093d-31ea-43f9-83a5-4f1f6628d396","resolution":{"observed_at":"2026-08-10T20:54:07.217213Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.127895Z","title":null,"venue":null,"work_id":"0443743d-7185-4b8f-9918-5665d7b73a7f","year":2016},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.713127Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:ea55a386ea0995376785dd418a6ef9ad1076214f65b0366ff26249eec5bbd3fb","observation_id":"d4a2100c-2284-4528-b484-efec5f25abeb","resolution":{"observed_at":"2026-08-10T20:54:07.153396Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.070709Z","title":null,"venue":null,"work_id":"44cc39eb-d069-4aed-8235-3185af8bd9b4","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.726863Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:cb549e75b00bee32cf0107b412a98008ced231ca2c8a7e7b89ec3a9737614440","observation_id":"50c09d3a-1048-4c9c-986a-aa138aff7ad8","resolution":{"observed_at":"2026-08-10T20:54:07.088060Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:07.005370Z","title":"Zhang, C","venue":null,"work_id":"3067fad1-64fb-4be3-bca8-7ff25a377363","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.737001Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:f8e531fbd2a936529851c8d6af8deda750fc3bd5e58f59715bdc81f9cc818661","observation_id":"7105f6d6-5f88-45b1-9d62-7930f40e0200","resolution":{"observed_at":"2026-08-10T20:54:07.017089Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.966864Z","title":"Xiong, X","venue":null,"work_id":"fe03b4d9-4067-4994-8e80-2422666fdcbe","year":2024},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.754211Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:39dde4c9db42cf77f4723625eac5a53a7a3d1133c40867b0313a6665be5dfade","observation_id":"4c350fca-147d-4a33-8ff4-8e9dddc5c36e","resolution":{"observed_at":"2026-08-10T20:54:06.977458Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.916330Z","title":"Prescher, V","venue":null,"work_id":"74fd5f43-1f88-4421-9f08-67e94b9f3578","year":2015},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.762824Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:d02dd1bab7ffd1c5d3c8a3378f48e8cc5428aea87909e4fd99bfe4ed6486bc40","observation_id":"e3cd39a9-ef09-4c5d-a1c5-5e49275e7b2d","resolution":{"observed_at":"2026-08-10T20:54:06.930295Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:04.774108Z","title":null,"venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.774108Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:c35ee0fbe99777da9a7e0d30d7c2f89e0032b5be52b0a9404b40b11e6a84b793","observation_id":"509fee6c-e1a0-48f5-9a7c-a7da5a10fef5","resolution":{"observed_at":"2026-08-10T20:54:04.774108Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.842710Z","title":"Kresse, J","venue":null,"work_id":"0ddfe919-1003-4093-9542-0ece0e71abd8","year":1996},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.779601Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:2c496adb637987dc0dfccf7c878be68a6e4490ab3946750f9350263056395190","observation_id":"3ba6c5a8-6627-4201-8c21-d61163827687","resolution":{"observed_at":"2026-08-10T20:54:06.850419Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.806730Z","title":"Kresse, J","venue":null,"work_id":"d3a006f8-558f-4e00-906a-3aaa7359bc8d","year":1996},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.788668Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:99e7fed8d23e50933638a14d2999455e460d998a69073c45da2f35379e75a8c7","observation_id":"20cd742a-fa0d-4b31-ac89-15421c56ee82","resolution":{"observed_at":"2026-08-10T20:54:06.816231Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.764860Z","title":null,"venue":null,"work_id":"9a017e43-0e3f-47f4-aa86-fdae3270c6e8","year":2007},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.812349Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:7e72bf8a217dc672b3d152721eaab09b9222d85802166f508d5e2dd4746a1ee0","observation_id":"5b38a7f2-0abc-44f1-8e04-4ba23c70e068","resolution":{"observed_at":"2026-08-10T20:54:06.772963Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.722834Z","title":"Nolan, Enhanced oxygen vacancy formation in ceria (111) and (110) surfaces doped with divalent cations","venue":null,"work_id":"83743556-c032-4e89-841d-b2b853a52526","year":2011},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.824715Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:06d9c9544eba24206130d63997613b1c64ad543c3079bb6f809bbe229fc864e3","observation_id":"0864589c-c788-4cd6-a835-a7992ce836fe","resolution":{"observed_at":"2026-08-10T20:54:06.739499Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.691605Z","title":"Nolan, S","venue":null,"work_id":"81787fe4-260b-4815-91c8-6150ec0b4268","year":2005},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.839393Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:7e677c411526ed45f2d6629e25534797ba00bd2cb5ef665f5af015af7522bc1a","observation_id":"7ec9db34-c0b0-41d6-ac7e-3f7b639efb35","resolution":{"observed_at":"2026-08-10T20:54:06.705376Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.642023Z","title":"Henkelman, B","venue":null,"work_id":"90109adf-7ccf-41d5-a520-7e99a01f71f1","year":2000},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.858332Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:34b012a8f4549d1be564d6106cf040387c4798beceb6211dc7cfe9ba54130d0d","observation_id":"6b41717a-ba28-4293-87cf-5ba2fe68c074","resolution":{"observed_at":"2026-08-10T20:54:06.651551Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.610171Z","title":null,"venue":null,"work_id":"14ba8535-9a3b-477b-83a4-2745ffd8c0e2","year":2011},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.874622Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:b650de0f0f050249da05d9b38a6cfb961324cde3c2948717797ef5e5deffbcd6","observation_id":"9a960f9b-31a9-429f-8efc-35dac2ec3820","resolution":{"observed_at":"2026-08-10T20:54:06.616448Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.555321Z","title":null,"venue":null,"work_id":"0598119f-c4a7-4959-8e37-013345d9d936","year":2013},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.880047Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:21db849da169d1a431bd0b806875d225b74fc4cf99b65bc761fb7f6b49c33f11","observation_id":"514b3df8-4cf9-499c-b0e0-05d42d1c9f3f","resolution":{"observed_at":"2026-08-10T20:54:06.564121Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.506640Z","title":null,"venue":null,"work_id":"c08e64a0-1d26-451c-8e12-16a863180bb5","year":2006},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.886446Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:c53184e2ab90fdd7a8f716c9d4e998651f88d30a9c469a05d6509505c8d04533","observation_id":"077aefed-7437-48ec-ba7f-bdbe978ac1ef","resolution":{"observed_at":"2026-08-10T20:54:06.519147Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.430511Z","title":"Parsonnet, Y .-L","venue":null,"work_id":"8453d30e-8ad8-4a75-b21d-5e526d703466","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.893214Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:5bf2250a151081ad718ea50674d1d445d4ea5da9715beb8c5cc5a64355383485","observation_id":"abba6462-0d75-43a7-b9bf-64cf543aee70","resolution":{"observed_at":"2026-08-10T20:54:06.452317Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.370423Z","title":null,"venue":null,"work_id":"ea2e18d2-4086-4cca-b8c9-25ec562fdb06","year":2011},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.909604Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:1d52165bd326848e2232f1e7484f3312f677adcf5f93855d354c219e0ec5f76f","observation_id":"1fabc629-9ebe-4cff-ba42-31476fc41dfd","resolution":{"observed_at":"2026-08-10T20:54:06.380283Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.297392Z","title":null,"venue":null,"work_id":"ceb27764-c3ce-4254-8ed5-d8fca61b21af","year":null},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.919007Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:1a3ef0d5bde592b1e30393c6aadb29c724d042638a8c5154aa89224640ff885e","observation_id":"69eb3561-706f-4fbc-a5cd-882fa990aa92","resolution":{"observed_at":"2026-08-10T20:54:06.313094Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.231967Z","title":null,"venue":null,"work_id":"c29445fc-55e6-43c2-b29c-4ea6b095f635","year":2019},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":62,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.933472Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:9e218fe58d3fbe0b2bf87e886846e5cbdffea0270ad3a9b8bb390ac02e67bc16","observation_id":"5254a0e1-9b85-41c9-84ee-e3a9c52008e5","resolution":{"observed_at":"2026-08-10T20:54:06.254076Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.154776Z","title":"Hwang, Y","venue":null,"work_id":"d0a35a63-b99b-4b1a-8f17-e8bf0277879a","year":2018},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.941125Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:7ad9c26222b093f168ef715e12320411ecbfe938e1a2f2b732fbf100c82b4d1e","observation_id":"18aea65c-629b-4a74-a049-83d0b69d5903","resolution":{"observed_at":"2026-08-10T20:54:06.188059Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.089269Z","title":null,"venue":null,"work_id":"9aca6212-8375-438f-92a3-cb91160a831b","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":64,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.949529Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:75f17411a627a27772d15baef4afd73ce27ed56d07349406d5288e6df5082878","observation_id":"052e262b-617b-4e9b-a323-e4502075594f","resolution":{"observed_at":"2026-08-10T20:54:06.097195Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.059306Z","title":null,"venue":null,"work_id":"03f6b879-893f-4667-a7a4-53abe8b3715e","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":65,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.959053Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:6fe90fce50c195495bd7cc5a23b68fdddc96cd377860ed076dc574502aedc907","observation_id":"cc39be09-a9ba-417f-9d29-b28b9cd8965e","resolution":{"observed_at":"2026-08-10T20:54:06.069306Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:06.026727Z","title":null,"venue":null,"work_id":"9004480f-76f4-40cd-8e50-7f9dec2310e7","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":66,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.969774Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:8f72103121cc9a47f120ee2b70a217ce480229b440a8e3e725297fa963248139","observation_id":"ef369ce0-c376-4deb-bc2b-751683874540","resolution":{"observed_at":"2026-08-10T20:54:06.040616Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.988566Z","title":"Jiang, W","venue":null,"work_id":"0e326902-d77b-4395-8db7-8e3d11cd8fb6","year":null},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":67,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.981123Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:5e94514870f9358927b20bbf2860d3527cf095ba6cae312cfd4526a0bc847665","observation_id":"73a83261-d319-4c0d-a0ff-087c09a6cb3b","resolution":{"observed_at":"2026-08-10T20:54:05.995983Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.941212Z","title":null,"venue":null,"work_id":"144dcf9e-a110-4e0a-a50c-123ac7cbd228","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":68,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:04.991145Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:161c390bcf29d03b4d7a25e7dce7ce8bc587294ee6d45e679845d99cad354249","observation_id":"b99dac26-d2d1-4bb7-9d06-f7bec9cf00ad","resolution":{"observed_at":"2026-08-10T20:54:05.953882Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.887144Z","title":"SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2","venue":null,"work_id":"c527734e-cc73-41f9-9e73-afd9371679dc","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":69,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.008424Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:ddecec73277338acf16bc96d86547184e2d96e203793f4807f9a1f031b265602","observation_id":"07710a6d-5791-4b60-aba1-1745fd755923","resolution":{"observed_at":"2026-08-10T20:54:05.902226Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.838154Z","title":"Yang, G.-Y","venue":null,"work_id":"e1c1740b-2821-4061-9c00-3fb659018b9a","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":70,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.022062Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:b2b538e45a2bde56b7f36a79d4c5e5d215ca268be9d820f2c87d93feb6f2af29","observation_id":"a6f0a707-1402-4d72-9e17-f15776cce434","resolution":{"observed_at":"2026-08-10T20:54:05.847722Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.813300Z","title":"Zhang, D","venue":null,"work_id":"66cf11ac-4864-4122-9346-5526997b6021","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":71,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.040283Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:2423f578d051284a2d4185014ba5e6dcc31864f961ab52a9f8278800d23496e8","observation_id":"7ef808f2-f127-4655-be17-835a9aedfe7a","resolution":{"observed_at":"2026-08-10T20:54:05.819256Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.764972Z","title":"Mehmood, R","venue":null,"work_id":"37acc4b5-0fe8-4a0d-a0ed-21e88658e57a","year":null},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":72,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.073770Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:09d923db932e1b44b37e6ea534dc8373b7dee5401894ebf2fffea1bdc51c1cdf","observation_id":"9cae0202-c7a4-48d6-9112-a4e2b2779425","resolution":{"observed_at":"2026-08-10T20:54:05.778042Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.693149Z","title":null,"venue":null,"work_id":"f638da8c-91d6-4d5e-960a-158c46f13532","year":2018},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":73,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.085765Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:674589124b95967d0e42045a1be4704831cd698092f16fdecb9aa75864b2f273","observation_id":"5d718615-6704-4bf1-9abf-ac7a366db26a","resolution":{"observed_at":"2026-08-10T20:54:05.715025Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.649800Z","title":null,"venue":null,"work_id":"0f001f65-ed58-4e27-ab0e-0aaceb070ae1","year":2019},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":74,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.110932Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:54b964e311c0de7f0b6d77fe70bc06354a22613cc5eb12c197cdaea54370699d","observation_id":"f61a92a9-5161-49e2-a4ca-f5f9c02bc899","resolution":{"observed_at":"2026-08-10T20:54:05.658037Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.608220Z","title":null,"venue":null,"work_id":"ab7acfa6-8249-449b-addf-38469109d927","year":2020},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":75,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.142625Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:e35af1fc928afaa616d7efb44770cbbf0aa2526d36d9481667084c1d07ebef1b","observation_id":"f7ff2051-a8a3-4135-95de-a07b2320952a","resolution":{"observed_at":"2026-08-10T20:54:05.617208Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.552640Z","title":null,"venue":null,"work_id":"558b7c14-99f2-4686-a93e-fe52bc64f353","year":2021},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":76,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.160489Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:263a42600357ae9e87085e9a02a3e88d654a825e7e3a62d4a2639b2d9c7bd099","observation_id":"26c8723b-f212-4d94-a203-76c021238285","resolution":{"observed_at":"2026-08-10T20:54:05.567178Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.443498Z","title":"Mehmood, M","venue":null,"work_id":"b35450f4-2fdb-413c-85cf-5da600d653a2","year":2019},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":77,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.172184Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:8ab9720dafdd762ba85091274c3faa5c9be9964813d65f16805b949c25e17d7d","observation_id":"24ec6b37-c4c7-4683-9828-875ad01d963d","resolution":{"observed_at":"2026-08-10T20:54:05.481982Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.374846Z","title":"Lo, C.-K","venue":null,"work_id":"040b19bc-cd3b-4d5c-8529-b40eced4b437","year":2022},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":78,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.185416Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:c1a768a415d78c222bdfa0ce3fbacce832d49bc25003b916630576c36e72d2d2","observation_id":"868279fe-dc21-48d0-acc3-e65621268731","resolution":{"observed_at":"2026-08-10T20:54:05.386295Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T20:54:05.305882Z","title":"the Fundamental Research Funds for the Central Universities","venue":null,"work_id":"49d2716e-df4c-4acc-8785-d8c90e41514d","year":2023},"citing_paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design","version":1},"reference_index":79,"source":"pdf_text","source_observed_at":"2026-08-10T20:54:05.202432Z"},"links":{"citing_paper":"/paper/2501.06754"},"observation_digest":"sha256:2362ad23ffbf796b937f5e0313cbcdcc6caf9a3af958b1ccddc34af86d968675","observation_id":"f5441f62-35b5-4677-9b26-09bf0b7c534e","resolution":{"observed_at":"2026-08-10T20:54:05.335674Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-14T06:32:32.682623+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2501.06754","last_updated":"2025-01-12T08:45:47Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-13T16:33:14.838259Z","submitted_at":"2025-01-12T08:45:47Z","title":"Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design"},"reference_resolution":{"displayed":79,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":48,"verified_exact":0,"verified_fuzzy":31},"total_outbound_references":79},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-14T06:32:32.682623+00:00","source":"crossref"},{"observed_at":"2026-08-14T06:32:18.44784+00:00","source":"retraction_watch"}],"thesis":"As of 15 August 2026, this Paper Citation Record lists 79 of 79 outbound references and 0 inbound Pith citation observations for arXiv:2501.06754."}