{"as_of":"2026-08-15T19:27:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:4433b0c587b548c844073d1446ec9acfe91cda11afcf4a3869f1bf24931d0f5f","coverage":[{"denominator":16,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":16,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-09T00:20:00.037926Z","state":"measured"},{"denominator":16,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":16,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-15T06:32:42.880941+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2502.03912/citation-record","integrity":"/paper/2502.03912/integrity","json":"/paper/2502.03912/citation-record.json","paper":"/paper/2502.03912"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:01.346069Z","title":"Memristive crossbar arrays for brain-inspired computing,","venue":null,"work_id":"f5803152-2619-4ffa-b815-27b5adf9bc69","year":2019},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-09T00:19:59.981107Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:0641d64012c55226b811ecd6e99c126be9ea51499ff7ddea3e62cbfd2a30d1a3","observation_id":"26027df1-88f6-42a7-9797-eaf654988a81","resolution":{"observed_at":"2026-08-09T00:20:01.350041Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-023-41647-2","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar,","venue":"Nature Communications","work_id":"05d3b7b1-e43e-4d92-b557-444be889412b","year":2023},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-09T00:19:59.985309Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:d5220ae37bdb291b72a767e29547607933f2ba6fbdfe5fcfa68e15102eacfce5","observation_id":"5e57910b-be99-4d4f-927c-bdcbe30cbdd1","resolution":{"observed_at":"2026-08-09T00:20:00.118084Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.nanolett.3c04358","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing,","venue":"Nano Letters","work_id":"e5af8ce3-05bd-451a-b718-93597a1256dd","year":2023},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-09T00:19:59.989172Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:372f27f6cb01b85592dd3c1d3af5cd3d2d7ba71cb14a6b70d8c54227bf0a2500","observation_id":"2fb69b8c-262b-4965-9964-2c47d9f9a655","resolution":{"observed_at":"2026-08-09T00:20:00.106908Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:19:59.992798Z","title":"Memristor Crossbar Arrays Performing Quantum Algorithms,","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-09T00:19:59.992798Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:82776b6ff17aa45f616d73174f28ef9808802fa839980d7785a4266a137fb428","observation_id":"2736d9f6-3bce-4fa6-b50d-0b3f2618d67d","resolution":{"observed_at":"2026-08-09T00:19:59.992798Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:19:59.996762Z","title":"Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping,","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-09T00:19:59.996762Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:39bf26c6fbb9b8b5769e9b1692b4de65a31e8ef93ec5731275d13b17ecbc9c0c","observation_id":"f310e7bc-199f-442e-a967-bd030611c97d","resolution":{"observed_at":"2026-08-09T00:19:59.996762Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsami.7b11191","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Analog Synaptic Behavior of a Silicon Nitride Memristor,","venue":"ACS Applied Materials & Interfaces","work_id":"e224e687-5c17-4190-800e-b487e6bb3205","year":2017},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.000549Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:266ef9f48bcd9d8815e220d3f12bff8ec019815776f9c994219fe524839d4e9e","observation_id":"4f08b8b8-adde-4735-85d7-02a3e84bc5a0","resolution":{"observed_at":"2026-08-09T00:20:00.095222Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:01.142132Z","title":"Logic-in-memory application of CMOS compatible silicon nitride memristor,","venue":null,"work_id":"ee086b32-2e82-4c9b-aac8-c2c0dcd297c3","year":2021},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.004756Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:11271018707e4ccf76ce853d287829dcbd3a5022bd145858c2f868059ac9e36b","observation_id":"35708d7b-9c26-4e9a-a82b-f56962cc07eb","resolution":{"observed_at":"2026-08-09T00:20:01.146275Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3390/ma14185223","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"In- memory-computing realization with a photodiode/memristor based vision sensor,","venue":"Materials","work_id":"92426063-8a49-48ba-a284-8c6b0366d774","year":2021},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.008394Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:cc7c6e262d771fdb2e8d5232ead6cf9742575d1e9362d29b7948d0a345bf80a1","observation_id":"e0248e2a-5d23-400a-8280-acaaaeb97d0b","resolution":{"observed_at":"2026-08-09T00:20:00.083420Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:01.333027Z","title":"True random number generator based on multi-state silicon nitride memristor entropy sources combination,","venue":null,"work_id":"0f7f9cc4-2b5c-473b-b293-4c0bf3171742","year":2021},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.012273Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:eb42806e0211173be420ba5be75f8e0ff57eb71bbd75f6f5d5515c02635324a0","observation_id":"669e4306-976a-4352-ab97-7a50ff4d3d44","resolution":{"observed_at":"2026-08-09T00:20:01.337485Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:00.941651Z","title":"Effect of SOI substrate on silicon nitride resistance switching using MIS structure,","venue":null,"work_id":"43019705-6f9a-4615-a689-54aebaf16ab7","year":2022},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.016140Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:8c60e9e11c307316991af787577ba017bc6314a1af9036bd6062131c9319973b","observation_id":"09473985-104a-40c0-a675-cfaca6d6b42e","resolution":{"observed_at":"2026-08-09T00:20:00.945356Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:01.320588Z","title":"Study of SiO2/Si Interface by Surface Techniques,","venue":null,"work_id":"331a3633-33a7-47cf-93ac-1c07e810ed29","year":2011},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.019869Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:9545dceaec4106a449cfc5c15f7bc3e47d998afe7f6f11376d82c85369941767","observation_id":"ffda2911-7a84-474b-8a68-ff94714a91b0","resolution":{"observed_at":"2026-08-09T00:20:01.324849Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:00.747945Z","title":"Multi-level resistance switching and random telegraph noise analysis of nitride based memristors,","venue":null,"work_id":"ca213059-ed65-4ec1-94c6-b7df403aa7e3","year":2021},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.023559Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:cc9ecb816edd1e7deb44712dcdf8d9f99c8b935e4df73997e5b62b5ba5202589","observation_id":"418274a5-ea94-4732-be70-1f830238fb43","resolution":{"observed_at":"2026-08-09T00:20:00.751670Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:01.309057Z","title":"A physics-based RTN variability model for MOSFETs,","venue":null,"work_id":"1482b922-79af-4156-8e1c-976fcd56d608","year":2014},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.027338Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:dc979d3306cca184ce7e40dc0ad2882b0bd7233e6b02f4d5b87888de20cf94c1","observation_id":"a19588a6-8ead-4d18-bc82-9f5d5df20cb5","resolution":{"observed_at":"2026-08-09T00:20:01.312859Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.35848/1347-4065/ac7bf6","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-10T05:30:23.456663Z","title":"Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy,","venue":"Japanese Journal of Applied Physics","work_id":"0649fccd-2e6b-4f31-b3e7-f300da22c446","year":2022},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.030832Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:ff727ab0294521e2d5c8a972f94c9589e1f80ad4cb59a947511d558464dc962e","observation_id":"07c550df-581e-459f-bd98-749a6d472470","resolution":{"observed_at":"2026-08-09T00:20:00.070417Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:00.558313Z","title":"Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random access memory cells,","venue":null,"work_id":"dcfa8f52-8793-4d81-802b-31b7db3217b1","year":2012},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.034464Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:1b721e55eb672b7a7a0c2f67ca89abdb7fe28026610bfbfab694039ea980de33","observation_id":"9b0ba664-8de7-41a3-8882-cfc1bdd2e926","resolution":{"observed_at":"2026-08-09T00:20:00.562178Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:20:00.329487Z","title":"Statistical fluctuations in HfOx resistive-switching memory: Part I-Set/Reset variability,","venue":null,"work_id":"c0ae83f8-ed66-43b4-9584-1bc442342422","year":2014},"citing_paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-09T00:20:00.037926Z"},"links":{"citing_paper":"/paper/2502.03912"},"observation_digest":"sha256:06d405317e14e58c8284d966e0ce42625fb15b78df105be9e3f005251ffaa60c","observation_id":"8bd0bb3e-8765-43d3-a5ed-2bb9445953ed","resolution":{"observed_at":"2026-08-09T00:20:00.334660Z","resolver_source":"arxiv_id_nonexistent","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2502.03912","last_updated":"2025-02-06T09:33:48Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-09T00:13:14.131464Z","submitted_at":"2025-02-06T09:33:48Z","title":"The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs"},"reference_resolution":{"displayed":16,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":2,"verified_exact":10,"verified_fuzzy":4},"total_outbound_references":16},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"thesis":"As of 15 August 2026, this Paper Citation Record lists 16 of 16 outbound references and 0 inbound Pith citation observations for arXiv:2502.03912."}