{"as_of":"2026-08-09T16:30:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:6e752a9f01999a679664beadffc709c87d0e5f311d7c6d7e22273b27965535bf","coverage":[{"denominator":61,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":61,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-07T14:25:37.907885Z","state":"measured"},{"denominator":61,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":61,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-09T06:31:02.800959+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2505.18940/citation-record","integrity":"/paper/2505.18940/integrity","json":"/paper/2505.18940/citation-record.json","paper":"/paper/2505.18940"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.jpclett.5b01686","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.959708Z","title":"Castellanos-Gomez, Black phosphorus: narrow gap, wide applica- tions, The journal of physical chemistry letters 6 (21) (2015) 4280–4291","venue":null,"work_id":"d60d6051-2ea3-46ec-bb9b-662ea034e7fd","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.263334Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:575800b5b2b68910ff14b2fba43e02c2d249ef8f4ce7ad6f9e16387ef828eb60","observation_id":"99ebf566-8da5-4dbe-befe-157bb4b97c2b","resolution":{"observed_at":"2026-08-07T14:25:43.966457Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:33.345943Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.345943Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:3ad6ccf4328f160d97e819e64ad702af3869a1e394fefa3fd6fc7dbecf0b85c9","observation_id":"b63f330a-1254-4a39-9de7-8ef7a2370d5e","resolution":{"observed_at":"2026-08-07T14:25:33.345943Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1126/science.1159725","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.928216Z","title":null,"venue":null,"work_id":"a99eeb8c-6c8a-4a06-a3e8-387d036b2554","year":2008},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.460762Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e8d77434cb3bf7516fddcd2c7d0278afdc8962e58ecabc878061da9920c9313d","observation_id":"d933d129-bf8a-4922-8da9-6b1576141f1a","resolution":{"observed_at":"2026-08-07T14:25:43.934517Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/0924-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.906874Z","title":"Boyer, E","venue":null,"work_id":"90754469-9acc-4237-afdf-35dc87480d99","year":1991},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.543220Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:0eab1fb7e686e2d264909e61035ffda9fa468b14e30f80b1c242285dbc46c75c","observation_id":"9d2b2119-5fa0-4f61-8d89-bb7c5b7036c7","resolution":{"observed_at":"2026-08-07T14:25:43.913786Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2022.11163","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.355679Z","title":null,"venue":null,"work_id":"8e6a2955-fb53-49f1-8d41-b796ca8f7144","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.641494Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:3339ffd331a5447ea32f7601383f3d0d2edd8abb5d4760aaa01d1b8baaba0360","observation_id":"4dbd0971-1403-4fb4-b087-5ba7901dc52d","resolution":{"observed_at":"2026-08-07T14:25:44.363506Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1515/9783110307023.1","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.882730Z","title":"Dai, Optoelectronic properties of narrow band gap semicon- ductors, De Gruyter, Berlin, M¨ unchen, Boston, 2015, pp","venue":null,"work_id":"580fc6e5-aa53-442b-8076-2edb4031eac0","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.724273Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:a209146f02bb09199f5964f36b9e3e0187471460ab19eede93270a932f0b9856","observation_id":"0b3a3bfc-b67a-40f8-8e11-2fd6ef56a48f","resolution":{"observed_at":"2026-08-07T14:25:43.890298Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/978-0-387-74801-6","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.862272Z","title":null,"venue":null,"work_id":"59ab522f-7bc9-4801-b487-fb803802fff9","year":2008},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.825814Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:0abca5ab5d7e962a0df43983ba9fd6fc6f55c863bf0f23b09b0e63fade83d8e0","observation_id":"4038a163-c728-436e-9cc6-d0666dd07494","resolution":{"observed_at":"2026-08-07T14:25:43.868579Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3390/s20247047","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.767537Z","title":"Rogalski, P","venue":null,"work_id":"1f75b487-1d34-4188-a31e-aef26423066d","year":2020},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.894902Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:8d5310abeecc0a7eca2c69a7b4e371e732305ceccf1fbba971b5bf0511479e04","observation_id":"7cca03b7-094f-4a8b-a9af-ca453078ea49","resolution":{"observed_at":"2026-08-07T14:25:43.847585Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1116/1.574249","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.534516Z","title":"Berding, S","venue":null,"work_id":"cc017c20-a594-4b47-905d-de8e70d1ac05","year":1987},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:33.962336Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e92c2a97ccfd7b4e4514ad36d8a9faaf6d27f2465ef804f11b4a7288fa0ee2e1","observation_id":"7ad783a8-4a06-410c-b16c-3443f2bfbf6e","resolution":{"observed_at":"2026-08-07T14:25:43.613772Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.037713Z","title":"Rogalski, Hgcdte infrared detector material: history, status and outlook, Reports on Progress in Physics 68 (10) (2005) 2267","venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.037713Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:cdc6ee820726e60b64cea4c421173b08be5821ab332466d0ec0d6011e00ecc9f","observation_id":"ece5e2d1-b3c5-4adc-ab84-d77bb26e7345","resolution":{"observed_at":"2026-08-07T14:25:34.037713Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1117/12.429413","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.356900Z","title":null,"venue":null,"work_id":"bf1f72d3-05f3-4a49-b6d7-59249b877f2b","year":2001},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.112579Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c403fd05036d93ebad3d510bfec5c9bfa9b1706fa81798e95439bbdcca6bd92c","observation_id":"e134b384-855e-43fb-b592-46364fddb721","resolution":{"observed_at":"2026-08-07T14:25:43.467075Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/s11467-021-1055-z","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:43.112594Z","title":"Li, Y.-X","venue":null,"work_id":"b3fc688f-76c0-420a-b935-cd5c57f384de","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.190805Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:98af62b7a8004af9733617ff91679249b355c07fd5d792a460c0b47803188851","observation_id":"07d16a3f-a446-48ed-9f2c-91f0a9cf1f98","resolution":{"observed_at":"2026-08-07T14:25:43.228476Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.448851Z","title":null,"venue":null,"work_id":"f5c55613-8d7a-4af1-a68e-9849daf5c37e","year":1990},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.289303Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:9ab46d714b882235df77e95bd6dd43cf00c3da6c3f834e2b81033b08cca9fa1d","observation_id":"8718accd-0107-483c-88c2-565ecba9adc0","resolution":{"observed_at":"2026-08-07T14:25:44.455292Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.362907Z","title":null,"venue":null,"work_id":null,"year":1987},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.362907Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:0b8df066f8112decd33e35b1aea153e38f4a222558646a62dde824ef30fcdb93","observation_id":"0cfb6aa5-ef93-405f-ada7-6d5c975b202b","resolution":{"observed_at":"2026-08-07T14:25:34.362907Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/b76778","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-09T00:03:45.533247Z","title":null,"venue":null,"work_id":"1da8628c-2f94-4e27-802c-d3b5d61bc16c","year":1998},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.444528Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:0d9e6cee79252a72b579432fa52226b752fffbbebed447df3cc63472f15a6620","observation_id":"c6878e1d-a0eb-467e-b189-a5a25bf2f766","resolution":{"observed_at":"2026-08-07T14:25:42.964382Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.430910Z","title":null,"venue":null,"work_id":"04e399b6-8540-4ef1-ae71-0e9daf89e780","year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.524499Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:19a083e601b580ac6bdcec637807c371969c75f80cc1e5d1968a9f8d16900e34","observation_id":"1a3abe85-23be-4691-86b6-ff353b6bd0a3","resolution":{"observed_at":"2026-08-07T14:25:44.436585Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.3139/ijmr-1998-0165","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:42.649221Z","title":"Kuper, W","venue":null,"work_id":"7e746464-5e6d-4d3f-9298-377c3b00e617","year":1998},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.598676Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:f99412ce615d56786711fb594069ddde95ce7c366b6617bad169065f14690e1c","observation_id":"f98ee840-acaa-46a4-9ad9-9401cdc78804","resolution":{"observed_at":"2026-08-07T14:25:42.748366Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.412980Z","title":null,"venue":null,"work_id":"ffb59ffe-d2fc-4994-bc96-a84ce4cc22c1","year":1964},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.672291Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c007133fd32ffab14ee7288285e19a4b39156e7796bd67528671d9e462145f48","observation_id":"153ba541-5416-46e7-9113-5bdf4197f7d0","resolution":{"observed_at":"2026-08-07T14:25:44.419048Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.calphad.2008.08.001","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:42.452750Z","title":"Colinet, J.-C","venue":null,"work_id":"73fd82d9-4797-4567-922c-9f4f1238f179","year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.746555Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:5b2c6f5c4593f565f43921bab4cb29806addfa16d38b20d3fa7dba3890340949","observation_id":"46e3c0ec-e97d-4a02-a77d-f9aabdc19850","resolution":{"observed_at":"2026-08-07T14:25:42.562791Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:34.822125Z","title":"Kirklin, J","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.822125Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:d86ddbb7b72cbffe0980202d07cbd2fc37bea3526642d30d859b52e547a9f486","observation_id":"d66c73b5-a6da-4e4c-91a5-63e41feecb02","resolution":{"observed_at":"2026-08-07T14:25:34.822125Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1455612","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:42.219196Z","title":"Mizuguchi, H","venue":null,"work_id":"2750254d-4d5c-48b2-8ddb-963f4e0648c0","year":2002},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.900633Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:57fceab63f94b06c2fdcef7393a8759218303e25cbfa400d37ab0d6318068e9b","observation_id":"38edc24a-0a88-4da7-aad0-60b001bf0832","resolution":{"observed_at":"2026-08-07T14:25:42.304301Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1007/s10853-014-8561-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.997105Z","title":"Chichvarina, T","venue":null,"work_id":"a488fecd-4ea3-437b-a1bd-8e6db3d8fdc4","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:34.948976Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:96a9298de01575704549d88c90aa888898ec8d688c8049883bbbc7d000c79d2a","observation_id":"4cd03990-ba03-42b3-8174-fe41b7b98f28","resolution":{"observed_at":"2026-08-07T14:25:42.105249Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/srep18554","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.759039Z","title":"Li, et al., Growth and stress-induced transformation of zinc blende aln layers in al-aln-tin multilayers, Scientific Reports 5 (2015) 18554","venue":null,"work_id":"f3ca5d91-511c-4381-804b-b5bfadd458a9","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.010941Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:6b32668a1bc92276546014a2297372d5c4268f2762a4d5ab4b535215ce12cda3","observation_id":"7bf72bb7-7b29-4bdc-b6b8-1c3a177341db","resolution":{"observed_at":"2026-08-07T14:25:41.836497Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.cis.2017.07.033","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.544568Z","title":null,"venue":null,"work_id":"78f7cf32-79c7-49d8-8b15-3785c8a00815","year":2017},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.130415Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:4302c73c3840c0a674a2dd275a9365926c751c6a73ca47a35f0c50640073783e","observation_id":"732b2a74-6d82-46b9-9af1-a70acfe2b938","resolution":{"observed_at":"2026-08-07T14:25:41.631000Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[{"edge_observation":{"observed_at":"2026-08-08T00:17:56.071387+00:00","source":"paper_reference_links","state":"open"},"event_date":"2018-04-25","event_type":"correction","notice_doi":"10.1016/j.cis.2018.04.006","provenance":{"observed_at":"2026-07-11T03:12:41.466844+00:00","source":"crossref","source_record_id":"10.1016/j.cis.2018.04.006->10.1016/j.cis.2017.07.033:correction"}}],"reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.cplett.2004.09.031","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.260816Z","title":null,"venue":null,"work_id":"38b365b3-a88d-4f28-a809-eb6ca0246d2f","year":2004},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.229846Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:2c40e2e325b2af88635ec3138cfb87a5732160564ff5aa5a3934cdc1111f48fa","observation_id":"340bc3f3-acd5-44a5-bc64-5a1b2b27fce0","resolution":{"observed_at":"2026-08-07T14:25:41.409620Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/masy.202100350","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:41.070898Z","title":"Alrefaee, U","venue":null,"work_id":"4c8a4a42-8499-4660-8d45-037c5c87f4e5","year":2022},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.303748Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:9d2e4a783e63194d855717fcfb36b1418c1192e0e1fbb3ac2e8f4f8fbcb0eb7f","observation_id":"637c0137-f8f3-43b6-acdb-4f52941c82dc","resolution":{"observed_at":"2026-08-07T14:25:41.142981Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssb.202400475","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:40.885425Z","title":"Manickavasagam, U","venue":null,"work_id":"c50a6746-d7bf-4de8-95be-436ed0f89b4b","year":2025},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.428733Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:a5dbffb8c80072e78ba7e18762a94875cc805e98f82bb73e92bf2c2d7cb7890b","observation_id":"da5b4fb1-6a6c-48ef-a77f-de8e475c905f","resolution":{"observed_at":"2026-08-07T14:25:40.999404Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.524956Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.524956Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:09ca9696d7ee19efa217d545a3ef986fcbcfbaf8cbf8522b2110ff38fe9d2f0a","observation_id":"901cba55-ae3a-442e-93e9-d12bba1e7791","resolution":{"observed_at":"2026-08-07T14:25:35.524956Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.624491Z","title":null,"venue":null,"work_id":null,"year":1980},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.624491Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ca51f46091d90874a1617d35883f523c7edae56a66afb04bf9c7b63061329e92","observation_id":"24747e29-e470-4d49-8bf7-29c43a6563f5","resolution":{"observed_at":"2026-08-07T14:25:35.624491Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.716139Z","title":null,"venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.716139Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ef8317832f7aad4d1b83857ad5bacbfece3f849df0a7063880f5f045bc5754e2","observation_id":"f347df80-e254-4933-a245-a4663f2d464e","resolution":{"observed_at":"2026-08-07T14:25:35.716139Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.786144Z","title":"Hammer, L","venue":null,"work_id":null,"year":1999},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.786144Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:b599e45859bdb060ff04fefa9e4050d19a8a8e9d4c7d8c1b5208db5201aa7018","observation_id":"f80a3b31-a933-4b61-a9bc-8e5f89df48d3","resolution":{"observed_at":"2026-08-07T14:25:35.786144Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.878088Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.878088Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:30fdb28650bc6cb8ceb602a1c316c7c2847c561293c3d9e312a27cd058b766b7","observation_id":"3cbd052c-a254-4b7b-aff8-084e35564049","resolution":{"observed_at":"2026-08-07T14:25:35.878088Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:35.986412Z","title":"Graˇ zulis, D","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:35.986412Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:5b83c0a4195e1c1c5661822ebe3f3a1c03bac6246e6f18160a79149850168b87","observation_id":"bd34dd12-1ab4-44df-bc79-b5e38729b71f","resolution":{"observed_at":"2026-08-07T14:25:35.986412Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.060103Z","title":null,"venue":null,"work_id":null,"year":1944},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.060103Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:363e3bfd6add649d61b5822fdb449049c78286c099c229539cced8cd7033cd16","observation_id":"1fa8498a-66ba-4ced-904f-729e2ef4773f","resolution":{"observed_at":"2026-08-07T14:25:36.060103Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.ijhydene.2024.05.442","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:40.495055Z","title":null,"venue":null,"work_id":"0693391a-ceb3-473f-a748-e50a1e0513bc","year":2025},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.132616Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:9a9a70aec8d011d621119cacd2a2a79335a9137a8d527123a0750db36c0b3461","observation_id":"2243a958-1523-43df-b0f6-43128dccae79","resolution":{"observed_at":"2026-08-07T14:25:40.605551Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2023.41515","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.174207Z","title":null,"venue":null,"work_id":"6c554c87-890e-4f40-967c-64d6722453cc","year":2023},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.215989Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:f2bf81c09bc6a0845cfad8ad8d27b6cf6b55e5835129e795a10f2a1626199dbf","observation_id":"aa360ffd-39b8-450b-a6b8-c8e44e450de4","resolution":{"observed_at":"2026-08-07T14:25:44.182365Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsenergylett.0c01758","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:40.312292Z","title":"Dyksik, H","venue":null,"work_id":"7b751295-6329-4f36-ac32-3b62831c66d1","year":2020},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.285073Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ec2a123d58767185ee0d00af03586d532cd3c8cb1ec29b3f869753a9ff593443","observation_id":"966aabf2-fead-48c0-b662-2acdcab412e4","resolution":{"observed_at":"2026-08-07T14:25:40.393606Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.396012Z","title":"Kittel, P","venue":null,"work_id":"d1f9dc67-40f1-4249-9711-e42dc2db583b","year":2018},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.382475Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:f0623a73799509b0ba89870edfbd00e564871ff9d34404fb732fba6ab7907d82","observation_id":"891eb67f-bbea-4452-a545-a76cd9308009","resolution":{"observed_at":"2026-08-07T14:25:44.401127Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.433300Z","title":"Tang, J.-W","venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.433300Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:73ea9236b5dbc05d7a2b03942ca26e43912063d6348335beab0f89f5fbeec5ac","observation_id":"e52ba2a6-43ab-4ff4-a81d-c65c5697c467","resolution":{"observed_at":"2026-08-07T14:25:36.433300Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.478322Z","title":null,"venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.478322Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:30669861345d7f0cc7f2bbe88ddb5d721bd4f9d025dc6b780458dc36faed8418","observation_id":"89555421-a704-4b7a-a3d0-db48cc25755c","resolution":{"observed_at":"2026-08-07T14:25:36.478322Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.572635Z","title":null,"venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.572635Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:b66c0e9e9fec1c12fd243d7dafd710bd91eddfec20509580f934bf9e17df81e7","observation_id":"17352db6-642a-48e1-abdb-711e48425bf2","resolution":{"observed_at":"2026-08-07T14:25:36.572635Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.82.184502","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:40.078964Z","title":null,"venue":null,"work_id":"1dde3491-36f0-4431-b585-d39e2ac0f3d7","year":2010},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.628912Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e570fac6bfd75ca4428f339c1e52ba30c6323aa0eabece4692833f147054dfe4","observation_id":"626e872d-7652-43e6-8dd1-d1d7868743a8","resolution":{"observed_at":"2026-08-07T14:25:40.142032Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevlett.84.143","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:39.846442Z","title":"Imada, M","venue":null,"work_id":"f54a377f-14bf-4fb2-bcff-eb81258e23cf","year":2000},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.679379Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:63cc725da88716864754f09096222aa03cacef032863595ec05b3f8c5a34b260","observation_id":"7bce485d-d50c-4867-8333-06a1376fd794","resolution":{"observed_at":"2026-08-07T14:25:39.955310Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.729129Z","title":"Peotta, P","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.729129Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:e38fd8586a6119535f2d4cfb25a2f3c7870a4e11cf939d8a4b06631593c4eaa2","observation_id":"0c670977-20a0-40bd-9c3a-6e22f1a2c6d0","resolution":{"observed_at":"2026-08-07T14:25:36.729129Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.824734Z","title":null,"venue":null,"work_id":null,"year":1965},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.824734Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:d25a0bfeabf706a203222f9703a8d88a28b769bad844323346ac39a06f9b1af8","observation_id":"12fbd812-9f6f-4d55-a511-1186716d4f37","resolution":{"observed_at":"2026-08-07T14:25:36.824734Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2006.02.036","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:39.634345Z","title":null,"venue":null,"work_id":"5bf453a5-249b-4e71-b227-d6a6310dbd09","year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.901064Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:3ec3c2acadab2e2cac98d4b256c10da8f710c0a7f5cce32b3807951e3f5bee49","observation_id":"a8360282-08fd-4892-950f-0ca001996296","resolution":{"observed_at":"2026-08-07T14:25:39.721668Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:36.947420Z","title":null,"venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:36.947420Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:eb144c6cf92e58f1c5484bd15313634858896b68e466b8e1322ed8ce52340865","observation_id":"958d4354-f243-4b33-adaa-70020ddb3195","resolution":{"observed_at":"2026-08-07T14:25:36.947420Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/ed078p387","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:39.436645Z","title":"Sproul, Electronegativity and bond type: Predicting bond type, Journal of Chemical Education 78 (3) (2001) 387","venue":null,"work_id":"473199cc-6e7c-4407-ba23-607679b57353","year":2001},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.004109Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:f159f7f870918fe421cb4085aa18ee81dd223beb3f8391445a5cdc7fd3ac1615","observation_id":"ea856128-375d-4b93-85d7-b704d52b753c","resolution":{"observed_at":"2026-08-07T14:25:39.527469Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.087683Z","title":"Henkelman, A","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.087683Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:afc40889ba34c36ea510955886894e8df7bd26cadb617c663cffb8395781753c","observation_id":"1095a744-6b3d-4ecf-a527-c2599db5fda3","resolution":{"observed_at":"2026-08-07T14:25:37.087683Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/jcc.20575","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:39.140530Z","title":"Sanville, S","venue":null,"work_id":"13060d01-566f-48f1-9d75-808a23480057","year":2007},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.161493Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:89dd19ec798dc4b3316c57a5bbd9339a40fe8b29bfd730882623f16513604964","observation_id":"75e12960-aa3a-40dc-a414-ea145f98217d","resolution":{"observed_at":"2026-08-07T14:25:39.219938Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.218972Z","title":null,"venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.218972Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:281cece23a6cf5dd503e0aefaedea854e3fd63014e9222a64c6b29521cc05c6e","observation_id":"7b7a01a3-926a-488a-a07b-e3ec18892544","resolution":{"observed_at":"2026-08-07T14:25:37.218972Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.374378Z","title":null,"venue":null,"work_id":"5b8fefc9-f2d8-4cac-89d3-a0e5d3718098","year":1976},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.293257Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:23f30c126c3986a318a81c36431039552eddc30454bb740802ed3443d99abb79","observation_id":"68056c1f-e440-46e7-9540-231c201021ec","resolution":{"observed_at":"2026-08-07T14:25:44.380514Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.358577Z","title":null,"venue":null,"work_id":null,"year":1941},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.358577Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:c61e24a77d771de12afe9d08fe71d93391bd1ad1ee1745e31d4b84f5eaedee02","observation_id":"a158c337-f1e9-4536-8818-5e2230112bd5","resolution":{"observed_at":"2026-08-07T14:25:37.358577Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:37.442868Z","title":"Gonze, C","venue":null,"work_id":null,"year":1997},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.442868Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:7ce6cdec384607540b3efa0d4621ec524a2f3b42c3718982381c9a0cb0b3acec","observation_id":"348bd478-734d-4283-88d3-4476f7961fe9","resolution":{"observed_at":"2026-08-07T14:25:37.442868Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.jallcom.2008.04.039","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.858401Z","title":null,"venue":null,"work_id":"6c42a844-4051-4fd5-919e-6000b318db1a","year":2009},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.508886Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:102c85cfc305de7f30548939480eb82e8647b26179459a4d7cf14d2e9ed9864c","observation_id":"04976fa4-fa0a-405b-ac27-396b7fb59967","resolution":{"observed_at":"2026-08-07T14:25:38.943319Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.70.085206","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.672231Z","title":"Srivastava, H","venue":null,"work_id":"9b24d9a9-655a-439a-ae7a-b46707039fec","year":2004},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.579846Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:bbd51a2e18ecd284f9d55a87aa56d0fc70172d5ed7babe272ba52c0a1183a0b8","observation_id":"60dabb4d-c826-4353-a3a3-c8c38beddb4d","resolution":{"observed_at":"2026-08-07T14:25:38.751526Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.3.1862","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.573235Z","title":null,"venue":null,"work_id":"6e548614-91c8-4b9b-8357-8bfac65e741d","year":1971},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.625286Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:986dcd0368761a2941a083ec229c344372d599e648349d0af59e3b123c4ee8ac","observation_id":"e6667f8e-2502-445c-8f6d-e2b58526c3f9","resolution":{"observed_at":"2026-08-07T14:25:38.627744Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/c2013-0-07656-6","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.397079Z","title":"Wooten, Optical properties of solids, Academic Press: New York, NY, USA; London, UK, 1972","venue":null,"work_id":"2cc53cd3-5698-4c8b-8ccb-923449fda46d","year":1972},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.678203Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:1891f74fee63654e6f7878ceb38e0c26175c670dce202f15a0d91c57d4358d49","observation_id":"fdeda124-3cc0-4bfa-9126-f7de306ad462","resolution":{"observed_at":"2026-08-07T14:25:38.475741Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.12693/aphyspola.136.486","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.197576Z","title":null,"venue":null,"work_id":"12ca697c-1281-4c1b-821e-dcc7bcb0346a","year":2019},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.777660Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:7cca7ca2f5a458b24e267ca47e7dcfd241d411ce4a02fbdbaffd2743376710e9","observation_id":"45279dd6-c8d3-4233-984b-950bd2d02d87","resolution":{"observed_at":"2026-08-07T14:25:38.279912Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2021.41334","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:44.078636Z","title":null,"venue":null,"work_id":"fa7ca4ef-9c51-479e-b12f-5dabb2f7c5c4","year":2021},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.841887Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:6dd72167ebaa39ea78f2f41f50637eeca33f57452b101a9aaa2d96f252835fc8","observation_id":"335f3446-97bd-4c10-8ff2-9e670e82c218","resolution":{"observed_at":"2026-08-07T14:25:44.095904Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4937269","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T14:25:38.029231Z","title":null,"venue":null,"work_id":"1430364e-242f-46d0-a58f-be221816f6dd","year":2015},"citing_paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor","version":1},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-07T14:25:37.907885Z"},"links":{"citing_paper":"/paper/2505.18940"},"observation_digest":"sha256:ca8b26f85e37f9f4b9446e6390ed8c0aa7c6d14f0f239d44e8c44d8a18d22e20","observation_id":"f7b6171a-9089-40da-9960-32053f0fbab2","resolution":{"observed_at":"2026-08-07T14:25:38.113138Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2505.18940","last_updated":"2025-05-25T02:20:04Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-07T14:20:46.254015Z","submitted_at":"2025-05-25T02:20:04Z","title":"First principles investigation of zb-TiSn: A promising narrow bandgap semiconductor"},"reference_resolution":{"displayed":61,"state_counts":{"malformed_identifier":2,"metadata_mismatch":3,"parse_uncertain":0,"unresolved":25,"verified_exact":30,"verified_fuzzy":1},"total_outbound_references":61},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-09T06:31:02.800959+00:00","source":"crossref"},{"observed_at":"2026-08-09T06:30:57.326959+00:00","source":"retraction_watch"}],"thesis":"As of 9 August 2026, this Paper Citation Record lists 61 of 61 outbound references and 0 inbound Pith citation observations for arXiv:2505.18940."}