{"as_of":"2026-08-08T12:14:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:d1787468d966e6d7f6f95fd6e00d8bcbd50edeadff5edc7dc04bb95e7a3bd005","coverage":[{"denominator":40,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":40,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-07T11:00:33.452172Z","state":"measured"},{"denominator":40,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":40,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-08T06:32:00.761636+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2506.03732/citation-record","integrity":"/paper/2506.03732/integrity","json":"/paper/2506.03732/citation-record.json","paper":"/paper/2506.03732"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.442531Z","title":"Variability Modeling and Statistical Parameter Extraction for CMOS Devices,","venue":null,"work_id":"a3e87852-ed8d-48bb-bed1-3d6e158d997e","year":2015},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.314006Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:07308e4fbfeeb8fd3850df4aef33b77247d3af0b8c1ca6e192a4bf274dd85338","observation_id":"98d584b5-1e62-474f-9f1b-2472f1829cb5","resolution":{"observed_at":"2026-08-07T11:00:35.446996Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.318279Z","title":"Graphene -Based Microwave Circuits: A Review,","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.318279Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:b3a3c22585e28544fab0f164d99065f40a2837b3e225016f42d359e8b5415610","observation_id":"1104b85a-9d98-4000-ba81-28aac60783b3","resolution":{"observed_at":"2026-08-07T11:00:33.318279Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/smll.202303595","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-08T00:03:56.115653Z","title":"Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics,","venue":"Small","work_id":"0f2e0b87-cdaf-4b0a-ad91-8c3007f1a8cc","year":2023},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.322364Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:d29aab01d5d4ef9c1e64754583a2ed4a225048bcbe36fece6ff4ce3efa21fd7e","observation_id":"3db0c077-8f05-41c2-abdd-eeabdbf5f84a","resolution":{"observed_at":"2026-08-07T11:00:33.618937Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/smll.201906640","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-08T00:03:56.115653Z","title":"Distortion-Free Sensing of Neural Activity Using Graphene Transistors,","venue":"Small","work_id":"866ac645-fc04-4437-a1b6-88b45a26dfb4","year":2020},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.325971Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:ae9cf12b567be9034223dcbf51cce1a05f7b69b71e9fcf66f39855c241ec8b7c","observation_id":"a44fa794-f985-445d-bb67-cfd3e617e6d2","resolution":{"observed_at":"2026-08-07T11:00:33.609037Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2013.22479","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.409295Z","title":"Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications,","venue":null,"work_id":"a591df2a-562d-407b-b085-3721ef8374d3","year":2013},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.330592Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:8fcf98c14b1866bfb669c6a94e3ea160c7267a89b24ca52877787473f7fb195a","observation_id":"ceb1db7b-2019-4f05-9039-ae28b62cc977","resolution":{"observed_at":"2026-08-07T11:00:35.416990Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.334264Z","title":"Graphene field- b) a) 7 effect transistors as room -temperature terahertz detectors,","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.334264Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:8117e53d4ca062ca070a3109a7384c34ce83cfe25e8890bba9d395c8d1778dfb","observation_id":"cdec07c3-11ad-466e-8c38-ff4fe631e235","resolution":{"observed_at":"2026-08-07T11:00:33.334264Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2017.27278","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.325827Z","title":"Wafer-Scale Statistical Analysis of Graphene Field -Effect Transistors—Part II: Analysis of Device Properties,","venue":null,"work_id":"febe4c38-c73f-4d30-a3cd-b05e7690b881","year":2017},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.341435Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:af40466563bdc9906c851a1d60c9ff58eca1a6407fac354f9d51e0fd6da21ea5","observation_id":"856c137e-e4fd-4800-a407-bdfe5ffbb435","resolution":{"observed_at":"2026-08-07T11:00:35.331334Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/aelm.201800711","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.588577Z","title":"Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors,","venue":null,"work_id":"be77d1a5-9b79-4db5-8f40-8de47cda47ee","year":2019},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.344845Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:549f8b1f658c05b4b86229473ec490d5fdd2d7c57f92de0272fec447d7fa7bcc","observation_id":"5b9a2815-8a01-4967-8773-2b4683fc1b81","resolution":{"observed_at":"2026-08-07T11:00:33.592341Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/d0na00632g","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.577863Z","title":"Bias dependent variability of low-frequency noise in single-layer graphene FETs,","venue":null,"work_id":"4f42a651-473e-426b-b2be-a2634f26b362","year":2020},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.348122Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:b62c5a80ecb58a5af73c21bdc5d84d180b2f064c9edfedff9c91e3ed15963c55","observation_id":"613b39e2-cd4e-4e43-96b5-3359c1bbbea6","resolution":{"observed_at":"2026-08-07T11:00:33.581707Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"1986.10526","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.230944Z","title":"Characterization and modeling of mismatch in MOS transistors for precision analog design,","venue":null,"work_id":"e9e2a3a5-ffb0-4f5f-b8f0-5eebb9164d57","year":1986},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.351690Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:fc65f77713c319b2db51424c8ad4af22ce4322f25eb47cf4af336089b3399fe4","observation_id":"34d5370b-5600-4490-ab0b-a7597b64e1a4","resolution":{"observed_at":"2026-08-07T11:00:35.238790Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"1989.57262","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.142017Z","title":"Matching Properties of MOS Transistors,","venue":null,"work_id":"d432b8dc-2e28-4e24-b0a0-36293561d3d3","year":1989},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.354727Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:ef8accbcd03f39ab8fe7c6a203ed9921d2a309d79020e63829fcaa0576c53b6a","observation_id":"d7c7b6f6-a63d-4b93-b487-726e4a85c8a7","resolution":{"observed_at":"2026-08-07T11:00:35.147637Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1109/55.585349","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.568128Z","title":"A CMOS mismatch model and scaling effects,","venue":null,"work_id":"1c037629-74c0-48bb-924d-de1c857ba037","year":1997},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.358051Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:8b920df736e0959cbd56f5917f28f6337d6ae852fe134eda92e013c0e477564c","observation_id":"bdbdb43c-3367-4cfc-8d8d-561dbc2b14bd","resolution":{"observed_at":"2026-08-07T11:00:33.571407Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1109/55.817445","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.558198Z","title":"A New Five - Parameter MOS Transistor Mismatch Model,","venue":null,"work_id":"512c2c93-2cac-4f82-8138-ee9d562bed1f","year":2000},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.361608Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:c879f055bd9704f751f5389b5c74f374ac740f3cc4abd057afdae8e7cb313302","observation_id":"9f4ea2fb-021a-44c8-a7ad-9ea5b09ada73","resolution":{"observed_at":"2026-08-07T11:00:33.561557Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2002.80095","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.059726Z","title":"An easy-to-use mismatch model for the MOS transistor,","venue":null,"work_id":"d5646253-4fd6-48d6-9666-f84f0371b3fa","year":2002},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.365003Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:76d2c23203fc4859b895a9f82ee8f0b9409541730929b9c654b2a6427f756f2b","observation_id":"fe0dd084-e180-4c0f-b350-621682ccef9a","resolution":{"observed_at":"2026-08-07T11:00:35.065447Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2002.80830","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.964065Z","title":"Understanding MOSFET Mismatch for Analog Design,","venue":null,"work_id":"c0e1132a-db8e-448b-9a4e-56c2fb9dad75","year":2003},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.368271Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:dd38555b881469031ae42a0d960798aa269f112ea508d8b497d876a855a79d31","observation_id":"1e23deb4-3280-449a-89a3-eb91a72982d8","resolution":{"observed_at":"2026-08-07T11:00:34.969649Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2013.65281","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.890917Z","title":"New methodology for drain current local variability characterization using Y function method,","venue":null,"work_id":"b091e3d2-35e6-4e0c-b390-c1f9c6d7f0f9","year":2013},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.371327Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:a035f7d2fab911f191ed14856ea89658ea1a9bcea9be75dcc7880025e925cec5","observation_id":"93d9395f-87fc-40f2-a13b-799a95fb6a50","resolution":{"observed_at":"2026-08-07T11:00:34.896873Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2015.24112","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.825207Z","title":"Impact of Source –Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n -MOSFETs,","venue":null,"work_id":"3f5fcfbd-bf7a-42d5-b2e8-dceb5631ee6f","year":2015},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.374586Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:687f58ead3709efd2af1cd8b565dbcfdb7c668204ad5c08b289dd331e90be84f","observation_id":"e0c495ff-1b3e-454c-be2f-63429bf7f635","resolution":{"observed_at":"2026-08-07T11:00:34.831346Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2016.75996","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.749505Z","title":"Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs,","venue":null,"work_id":"9f385fb7-2793-47c0-ac3f-7dee2b4b80b8","year":2016},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.377869Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:cd5a082993cb2fc4d5f185b34119f17d4b115e84cc0006f1aa9b9be50190c61e","observation_id":"f4a012c8-7985-46df-aabd-f6873ad2dfeb","resolution":{"observed_at":"2026-08-07T11:00:34.755129Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2017.26863","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.663397Z","title":"All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14 -nm Fully Depleted SOI MOSFETs,","venue":null,"work_id":"2a65840e-e234-4188-9db0-e7ae79429e76","year":2017},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.380970Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:9a4a6f4b0de3f32bf52c13cd8cc13620379d899c8ae3a7f137bb9f9fca2ce51a","observation_id":"0abdc6dc-0cf1-4465-a6c3-bbdfb6f14ba3","resolution":{"observed_at":"2026-08-07T11:00:34.668865Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.384038Z","title":"Variability Modeling in Triple-Gate Junctionless Nanowire Transistors,","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.384038Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:d358f5ae80bc0d762b7a5eaedfd4a757ae47b839e2d1a89ff99a7c3353fe3658","observation_id":"cffb84e7-747f-471e-8c35-2d93751ab77d","resolution":{"observed_at":"2026-08-07T11:00:33.384038Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2003.81828","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.516810Z","title":"Current mismatch due to local dopant fluctuations in MOSFET channel,","venue":null,"work_id":"152de15c-610a-4b9f-9158-b9a12a96a831","year":2003},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.387137Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:10c3418f087e690381d349c0ad15b9edac87a348bc195fc692a8eb84f0dfde81","observation_id":"90ea449f-31e4-4025-ada0-fc7f5682560c","resolution":{"observed_at":"2026-08-07T11:00:34.522625Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2005.85204","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.431825Z","title":"A compact model of MOSFET mismatch for circuit design,","venue":null,"work_id":"d6f3b9cd-d7c3-49c3-8568-84678d75b850","year":2005},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.390949Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:0c586187225c0854faf4e36797a48289e3fd90a303f35821fdfd8c903312ce15","observation_id":"5dfab8e7-6eb3-4853-be70-3103fb501d44","resolution":{"observed_at":"2026-08-07T11:00:34.437094Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.394367Z","title":"Modeling of Drain Current Mismatch in Organic Thin -Film Transistors,","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.394367Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:79ce9b0405742c9eb954d3ab1db2e04f465bc36705a616788cabfafd7eff60a4","observation_id":"6f9a9761-db92-43d1-b2ae-120014e0a3ce","resolution":{"observed_at":"2026-08-07T11:00:33.394367Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2020.30186","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.248070Z","title":"Charge -Based Model for the Drain-Current Variability in Organic Thin -Film Transistors Due to Carrier-Number and Correlated Mobility Fluctuation,","venue":null,"work_id":"695480dc-7378-49a3-8fbe-83335b192a53","year":2020},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.397560Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:87b473a738248a8baf779001f377cca47116f3da131d2050c5a63f8c3b180d09","observation_id":"818069be-fe9c-4c3b-bfac-eea8fe364476","resolution":{"observed_at":"2026-08-07T11:00:34.253653Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:35.425277Z","title":"Charge Based MOS Transistor Modeling,","venue":null,"work_id":"53a1fc0f-91bb-4be1-8753-4d02ccb280b0","year":2006},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.400908Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:9f9c0ca663c21c1bb01346255754d26921dacfce78e04b1e04b9c3fa5f2922cb","observation_id":"ce0e55d5-1ff3-447e-af6d-8d42379056ed","resolution":{"observed_at":"2026-08-07T11:00:35.432918Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2003.81514","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.166349Z","title":"A compact model for flicker noise in MOS transistors for analog circuit design ,","venue":null,"work_id":"921580ab-8fee-472c-816e-f3d0f890b142","year":2003},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.404261Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:dcee5ebe333fc3680b6fa340dfa0b7a22ec7d99adf2d9501803c62928321e606","observation_id":"c549b3f0-629c-4517-b122-4d579b4b1e7d","resolution":{"observed_at":"2026-08-07T11:00:34.171827Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1109/16.47770","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.548050Z","title":"A unified model for the flicker noise in metal -oxide-semiconductor field -effect transistors,","venue":null,"work_id":"1e19fe74-44ad-4a23-bec2-ac216eb4c27c","year":1990},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.407546Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:ecafe3572e7f400ee648c8c82b3ad2786654b593af633fd9b661778ec79997a5","observation_id":"3d708d08-468e-4c5f-9f07-1a348e960463","resolution":{"observed_at":"2026-08-07T11:00:33.551603Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2023.10684","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:34.093008Z","title":"Compact model for the bias - depended low-frequency noise in organic thin -film transistors due to carrier-number and mobility-fluctuation effects,","venue":null,"work_id":"5b949ede-9b12-403b-89bc-0070260c9b7f","year":2023},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.410827Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:49094437b0604de0a172f53da2752cd4a1d07ba110a790b381eb441ea639570c","observation_id":"222b0883-0b31-4124-afc6-30ade254cada","resolution":{"observed_at":"2026-08-07T11:00:34.098651Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.80.235402","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.538109Z","title":"Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene,","venue":null,"work_id":"eb1a2cc9-7060-4024-8bd2-c950e385acf7","year":2009},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.414039Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:fc217d7d46d179b47432399ea867bd93dcabc6a170ba222ae1491514834f2946","observation_id":"253315b0-5f71-4a73-8de3-d6f6390b47fb","resolution":{"observed_at":"2026-08-07T11:00:33.541814Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.417194Z","title":"Mobility and saturation velocity in graphene on SiO 2,","venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.417194Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:3f7043118299d591d9186ef971dc5c6ba9049f766f21e9d85e38af94e5783024","observation_id":"10cef18e-f941-4e61-bc95-ba414824ad4d","resolution":{"observed_at":"2026-08-07T11:00:33.417194Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0121439","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.520931Z","title":"Mobility and quasi-ballistic charge carrier transport in graphene field -effect transistors,","venue":null,"work_id":"690fbaaf-d2c1-41e6-b372-c9550d25fe94","year":2022},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.420467Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:f4dacdcba498b6200accb5aae499ac796d4f256fac97be009e847a77d07d080d","observation_id":"94993acd-7e94-4fed-8da5-aa3e33c8ec36","resolution":{"observed_at":"2026-08-07T11:00:33.524246Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.5003684","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.510696Z","title":"Charge carrier velocity in graphene field-effect transistors,","venue":null,"work_id":"ae010a5e-0de6-4f0f-b5b2-67e7a67e957e","year":2017},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.424231Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:c3c747faa28090ab5a0bc07279ccfc46917042c11f6c0b1e78fc9fac26f5f1b1","observation_id":"9b1de115-d902-4693-8139-d16269815496","resolution":{"observed_at":"2026-08-07T11:00:33.514228Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.90.085434","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.500734Z","title":"Negative correlation between charge carrier density and mobility fluctuations in graphene ,","venue":null,"work_id":"7e70c5fd-0b85-4632-bdb3-abbf48875a5e","year":null},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.427310Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:4a771d21f38a9b59899ef914c80e62da8c67873257ee7403f1585d965040ade3","observation_id":"c5445c75-900e-4611-9ef5-47140ca67ca4","resolution":{"observed_at":"2026-08-07T11:00:33.504253Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1109/16.877177","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.490430Z","title":"Critical Discussion on Unified 1 /f Noise Models for MOSFETs,","venue":null,"work_id":"ce931cdb-c02d-4c6c-b2b9-75baf206c5c5","year":2000},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.431109Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:d65938bfbdceb6c850020df93b3f3fcb73cc4db27b4edcbb4cd38ef594acfb56","observation_id":"6c176cfa-5564-4a29-aa56-5e64c08ca892","resolution":{"observed_at":"2026-08-07T11:00:33.494646Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.434433Z","title":"Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs,","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.434433Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:33d1cdff808769b82d500164fd6f70c06d310432e2afd5650a279712595a41db","observation_id":"bed70f93-c198-416a-8e2d-97ffdf7fcd71","resolution":{"observed_at":"2026-08-07T11:00:33.434433Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/adma.202201691","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.477622Z","title":"Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field -Effect Transistors,","venue":null,"work_id":"3a3b7f32-5cf4-4cfa-bd76-2b3572f5c5e5","year":2022},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.438201Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:b326c4d854f57157e098f38ef0444990c34da5b9d7f190fe1bd8570b21110874","observation_id":"f68fc172-c694-4788-a698-1ac08348fc4d","resolution":{"observed_at":"2026-08-07T11:00:33.483246Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.441359Z","title":"A Scalable Compact Model for the Static Drain Current of Graphene FETs,","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.441359Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:d10fd36d20d0a06aa1f3a87bc70633cca428026bd666a2d72131d8cef062a957","observation_id":"9355615c-32c6-4ffd-9129-9718abd9bd4a","resolution":{"observed_at":"2026-08-07T11:00:33.441359Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.444901Z","title":"An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors,","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.444901Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:14efe0825f6ce92449c2d6d7bbfaa360fb6a18d5a2ae922ee0356935a7472efe","observation_id":"1e62e38c-af00-4ae9-9fab-0e8bf3fff0f7","resolution":{"observed_at":"2026-08-07T11:00:33.444901Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.448827Z","title":"Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single -Layer Graphene FETs,","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.448827Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:3b84fa6e286b37feff2564c08c75487fb79bb06c2dcba057ec3766b5a59392bd","observation_id":"2f8b0c4b-beb4-473c-996a-10dcd4944d46","resolution":{"observed_at":"2026-08-07T11:00:33.448827Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-07T11:00:33.452172Z","title":"Graphene field -effect transistor TCAD tool for circuit design under freeware,","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-07T11:00:33.452172Z"},"links":{"citing_paper":"/paper/2506.03732"},"observation_digest":"sha256:8ee882412a4a4f1650f655d3ababac6fde4a69e5092e53c06e2d3a920e1b4b2d","observation_id":"a8a1d840-153a-45a5-bf1a-5c15e1d2125b","resolution":{"observed_at":"2026-08-07T11:00:33.452172Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2506.03732","last_updated":"2025-06-04T09:05:47Z","latest_version":1,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-07T10:54:13.802156Z","submitted_at":"2025-06-04T09:05:47Z","title":"Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs"},"reference_resolution":{"displayed":40,"state_counts":{"malformed_identifier":0,"metadata_mismatch":15,"parse_uncertain":0,"unresolved":10,"verified_exact":13,"verified_fuzzy":2},"total_outbound_references":40},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-08T06:32:00.761636+00:00","source":"crossref"},{"observed_at":"2026-08-08T06:31:55.24221+00:00","source":"retraction_watch"}],"thesis":"As of 8 August 2026, this Paper Citation Record lists 40 of 40 outbound references and 0 inbound Pith citation observations for arXiv:2506.03732."}