{"as_of":"2026-08-16T19:58:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:2cb5b0887e76bb8f6a92e79af6b3add4e5161da3d56a4a0e2900ce194dc68848","coverage":[{"denominator":67,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":67,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-02T21:21:43.684798Z","state":"measured"},{"denominator":67,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":67,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-16T06:30:59.297886+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2602.20754/citation-record","integrity":"/paper/2602.20754/integrity","json":"/paper/2602.20754/citation-record.json","paper":"/paper/2602.20754"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:35.955774Z","title":"Wen, Colloquium: Zoo of quantum-topological phases of matter, Rev","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:35.955774Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:a211b6717f8c18ebbe2caa4791937729552770057a1239d26a9e93dd918f0c6b","observation_id":"557c4773-1216-41cb-8123-ddf34b3a9db5","resolution":{"observed_at":"2026-08-02T21:21:35.955774Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.043878Z","title":null,"venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.043878Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:5eb9ad970ee88623b0b9157880250c586df5644e56bae799d0c1bf8473c3e721","observation_id":"055e17fe-fe16-4dd9-a28e-01c484556145","resolution":{"observed_at":"2026-08-02T21:21:36.043878Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.094799Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.094799Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:4ab5813f12490548b2429203244e0f7f3a2805c9fd720847be2655fb9fca68d0","observation_id":"6afce9ba-335f-45c6-a591-d6eba8e0c3b2","resolution":{"observed_at":"2026-08-02T21:21:36.094799Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.211421Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.211421Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:bffb3f88082e93e6bbf371bbf4594be9300ea7c803fdc3315acf6ecbb688320c","observation_id":"e0377473-cfe3-4632-8949-77e313f463f4","resolution":{"observed_at":"2026-08-02T21:21:36.211421Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.351073Z","title":null,"venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.351073Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:6c5fab43dc87eda9122304325f2ea4e40f322be54f62f5efa61a1dcfa175c377","observation_id":"67a90283-3799-4b26-aff2-1299bb7b5d0d","resolution":{"observed_at":"2026-08-02T21:21:36.351073Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.438210Z","title":null,"venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.438210Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:b407396ccd6bac96500aef0b52e6b5b65e40e2ec9a81eaf8d8ac291700a3b545","observation_id":"be82badd-df14-43d4-a8e8-133284f956d7","resolution":{"observed_at":"2026-08-02T21:21:36.438210Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.555723Z","title":"Juriˇ ci´ c, A","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.555723Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:ab10efaff89c6452faf658945a9512631debf6acd3846aafdab42d9ae09637a0","observation_id":"99acdbd4-58a1-47c9-926e-3bd2206a91be","resolution":{"observed_at":"2026-08-02T21:21:36.555723Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.609772Z","title":"Queiroz, I","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.609772Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:2dd2ab93aec708b9f995622badab0c685aff1bae43ac4149f408b40f284cbe50","observation_id":"e0f305b6-9d88-40c6-a118-22a20e85673c","resolution":{"observed_at":"2026-08-02T21:21:36.609772Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.718720Z","title":"Schindler, S","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.718720Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:5cf6010f4ccca2e1ba19e62b69a671646414acf58d7e1f13d0e013951d40af40","observation_id":"d69b5d14-f4f4-4444-b8a1-ae9dd3f6a039","resolution":{"observed_at":"2026-08-02T21:21:36.718720Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.811933Z","title":null,"venue":null,"work_id":null,"year":2035},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.811933Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:c4da85ceb0ce361a6e16c04d9b0c442d14ebc87b2a7768e7b7c5a58f2951d2c9","observation_id":"2b6a55b6-e7ec-4e36-98e7-08ea083c9a71","resolution":{"observed_at":"2026-08-02T21:21:36.811933Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:36.910016Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:36.910016Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:af5e1b01d5fbfd11eaaa56111a63eed5b0696c82cd561fdf270f7709aa0cf19f","observation_id":"1b3b6f4f-5703-4174-9a36-ead0fc554041","resolution":{"observed_at":"2026-08-02T21:21:36.910016Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.014612Z","title":"Paulose, B","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.014612Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:2b3494b8f665281e1a87b4be392f45e41d6ca2f8dcb223d530628bac8fc9cbf8","observation_id":"11917810-69b9-48fc-9c70-2de7b0f893f3","resolution":{"observed_at":"2026-08-02T21:21:37.014612Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.121323Z","title":"Li, H.-X","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.121323Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:b69ea3d167d373fe140032d5fabfdd01328a3b732bc546260487c7ec792396bc","observation_id":"99ad905b-522d-4da9-a5b5-ac1afaf281d7","resolution":{"observed_at":"2026-08-02T21:21:37.121323Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.256441Z","title":null,"venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.256441Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:2f2a403d494fed5605613aacc081174d02133a565af62c08dd406b50b9c2501c","observation_id":"2f98070e-9caa-4a9a-98b3-c01d59dbb1bc","resolution":{"observed_at":"2026-08-02T21:21:37.256441Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.423016Z","title":"Zhong, B","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.423016Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:45d8db4e244fcae83c2a2259bd411f7681b2833cdfc95cc4422fad1aa4b2ec66","observation_id":"f62fb7ba-183f-475a-a955-13211a746946","resolution":{"observed_at":"2026-08-02T21:21:37.423016Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.566622Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.566622Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:58eb9df4a6099280e20d01ec16f6a6a50acd4bf91f45038dbd4712ca39e15e43","observation_id":"4e0f7c8b-74b1-47d4-9110-c17510389b58","resolution":{"observed_at":"2026-08-02T21:21:37.566622Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.772314Z","title":"Slager, A","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.772314Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:161457783e7baaccfee51f3a256e39b6db36d94494924e95e11dd1a304cfc41f","observation_id":"7027ba82-3ce4-4963-82ee-515bf1815d3b","resolution":{"observed_at":"2026-08-02T21:21:37.772314Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:37.987989Z","title":"Roy and V","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:37.987989Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:7a63743ba528f28fb8c28167de52dc413adc3f9c0bd6a04f84107955266d16ca","observation_id":"ef3409af-4f4f-45cb-93ce-b2631321b88e","resolution":{"observed_at":"2026-08-02T21:21:37.987989Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.083682Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.083682Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:4f71ec77b28422498df45dbae3b080423c44a9b5cedee50b3303ac558ab3d979","observation_id":"8c650ef5-a03c-451c-a885-8172c49b00f6","resolution":{"observed_at":"2026-08-02T21:21:38.083682Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.240431Z","title":"Schindler and A","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.240431Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:b4ee2798c6cb6a898fffc06741b4071dede1d60f4208ab9b4816c993288be942","observation_id":"52fd88a8-a433-4563-9d67-b7533fdfd85d","resolution":{"observed_at":"2026-08-02T21:21:38.240431Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.457056Z","title":"Hu and R.-X","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.457056Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:4db53061aec91a0fb78b563458b655635173fd94dbe577998e5dff0e884cadd9","observation_id":"5e9b7cba-a6f3-4a2a-979a-39e207658919","resolution":{"observed_at":"2026-08-02T21:21:38.457056Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.641263Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.641263Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:9a00d43b6ea7346e47a1bb2b7dc553262d5d03e43055b5f4fc425cc79a698b78","observation_id":"6eae9847-c3a1-4770-a8ab-d52be6dce114","resolution":{"observed_at":"2026-08-02T21:21:38.641263Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.839566Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.839566Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:cf82d3240b88a4e59ae4ee5c64edcc00fcca1decd12a3550487a44c04eade234","observation_id":"332feb97-51db-49d8-907e-93cf0df1d106","resolution":{"observed_at":"2026-08-02T21:21:38.839566Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:38.939257Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:38.939257Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:38ef29b117e0b43c90172f48fa78b132faf2dbb5d1edc5f5a2bc6cb4d2445d4e","observation_id":"1f61a82d-cd56-4256-b8b0-c6694e74c724","resolution":{"observed_at":"2026-08-02T21:21:38.939257Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.058020Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.058020Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:c551c1cf7935df7ce1e9612553fe8a7077fef2dd71ee4d22ab73c7a17a669bec","observation_id":"b6b64d6c-9ae6-4e3e-93e5-dab364bb44cf","resolution":{"observed_at":"2026-08-02T21:21:39.058020Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.130005Z","title":"Bradlyn, L","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.130005Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:22ab5235b7e8b86517ac7ae152fc40055a3d7d55a8f41e43eaa7b3fc6e546f8b","observation_id":"11b19574-2335-4d92-9077-5d02cc7c868e","resolution":{"observed_at":"2026-08-02T21:21:39.130005Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2406.08114","last_updated":"2024-06-12T11:51:31Z","snapshot_observed_at":"2026-08-16T13:43:47.871890Z","submitted_at":"2024-06-12T11:51:31Z","title":"Massive 1D Dirac Line, Solitons and Reversible Manipulation on the Surface of a Prototype Obstructed Atomic Insulator, Silicon","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2406.08114","snapshot_observed_at":"2026-08-02T21:21:39.234393Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.234393Z"},"links":{"cited_paper":"/paper/2406.08114","citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:8f1a069eef0a88628a0f19b4cbf43d10811d82d4a2a98c0d0ce86d39c8a48d1c","observation_id":"8e37cf98-b91e-45b6-9bba-230217a67c28","resolution":{"observed_at":"2026-08-02T21:21:39.234393Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.337152Z","title":"Li, D.-S","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.337152Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:5c7bcac4b92d49fbc826adb9723ec6d9b53ae5b9354a3a52f9fa66eda6320e71","observation_id":"b7c954f9-e225-44f7-85c7-823cfe64f68a","resolution":{"observed_at":"2026-08-02T21:21:39.337152Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-021-26241-","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:24:02.198689Z","title":"Elcoro, B","venue":null,"work_id":"60ae464e-3e8c-4594-8b7a-d3ed42e22f8c","year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.439346Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:2846e86be12e3091708e9ed3fb08d8f0f77538c7de43f07beda7148937cd6645","observation_id":"b35da95a-da6b-4a8c-b7ad-07d0f680d9c4","resolution":{"observed_at":"2026-08-02T21:24:02.295070Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.587163Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.587163Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:e6a32a0caae3e0b26241fa1222482ac90ca2f40151a4c269c9b38872205c5860","observation_id":"706c40be-7687-4077-bf97-40b058859726","resolution":{"observed_at":"2026-08-02T21:21:39.587163Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.658246Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.658246Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:5d88803ea9a5f16e60e2b28167c626b3cdd8bd8bc7d3b98608aaf258ec8a5be0","observation_id":"1a460f7f-65c3-4f1c-a655-87c9d1427f8b","resolution":{"observed_at":"2026-08-02T21:21:39.658246Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.739109Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.739109Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:1f88409fbf1e3368cf68c28929796ca0080c5db712e0587a05c03289d248b16a","observation_id":"f6342dfb-526a-4727-8fb7-59d20e42448e","resolution":{"observed_at":"2026-08-02T21:21:39.739109Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2111.02433","last_updated":"2021-11-03T18:00:06Z","snapshot_observed_at":"2026-08-16T17:44:14.004791Z","submitted_at":"2021-11-03T18:00:06Z","title":"Three-Dimensional Real Space Invariants, Obstructed Atomic Insulators and A New Principle for Active Catalytic Sites","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2111.02433","snapshot_observed_at":"2026-08-02T21:21:39.882477Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.882477Z"},"links":{"cited_paper":"/paper/2111.02433","citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:30a0eb724c9fee5007e08831d8d9f48f80b85bcf38bb095e7568e7aea2f99d8b","observation_id":"dca3a77a-dfac-40ed-9b6e-40cb202d8dc0","resolution":{"observed_at":"2026-08-02T21:21:39.882477Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:39.996923Z","title":"Schindler and B","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:39.996923Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:ccbedadbcc95891facee8e17ba46b08150d05e9421f384106b4003c7a5abd453","observation_id":"4642e8ff-76b8-42dc-b3da-3a585840a583","resolution":{"observed_at":"2026-08-02T21:21:39.996923Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.104109Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.104109Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:f38bf1809ca154bff62973d1f5746125fc948b5b2ab7dc0d7789c37d9d611abe","observation_id":"b5086bf2-a486-43d2-8f6e-789c744d07ea","resolution":{"observed_at":"2026-08-02T21:21:40.104109Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.270724Z","title":"Liu, M.-Y","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.270724Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:601709196ae7246f4d190873240f02961795bb55c2ec6495f8705837cc7816ce","observation_id":"af263520-3e9e-4a7a-9b8b-355488a98859","resolution":{"observed_at":"2026-08-02T21:21:40.270724Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.444152Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.444152Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:9f04a9dd164713209441de27117906ec961d7c76a27a47b9f8b0f1052d36e4b4","observation_id":"45adb12d-a6cd-44ce-8a85-89f111a5c151","resolution":{"observed_at":"2026-08-02T21:21:40.444152Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.547218Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.547218Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:c1f2024631a86cf03f826aed2ae78f55242ecbb6e4bc1bd9f6cb76ad7410d62f","observation_id":"56c513e7-40ac-4f52-930c-2b49e584a0cf","resolution":{"observed_at":"2026-08-02T21:21:40.547218Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.721972Z","title":"Arroyo-Gasc´ on, S","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.721972Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:391921db32c53dbcd82727a1237fd1245bc593d61ebfd5a5c9ee95b8ddad2312","observation_id":"509a8da9-f0ca-46c1-aa84-c09350da0c4d","resolution":{"observed_at":"2026-08-02T21:21:40.721972Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.814394Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.814394Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:b0afc27c6bedde73620f03b06d283848f76e4e78ef7f347a7eb9ef0c14695cc1","observation_id":"6519e80f-65b2-4014-abbb-ccbea02ce914","resolution":{"observed_at":"2026-08-02T21:21:40.814394Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:40.915850Z","title":"Wang, T.-T","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:40.915850Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:242689ce3fc94293bc9721fad0d78603e5d59d963d8f66f7a57701735b870044","observation_id":"0836b6e7-2542-4b13-a4c6-469864e67f81","resolution":{"observed_at":"2026-08-02T21:21:40.915850Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.055092Z","title":null,"venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.055092Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:31979be4c85484ee5415a57b10b7e9276907ff1bb94a24829139c8c5fdf456a8","observation_id":"6442e458-46fd-4b8d-ac49-cf6c8dea4583","resolution":{"observed_at":"2026-08-02T21:21:41.055092Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.131210Z","title":"Verma, S.-M","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.131210Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:7557bb921f438cb58079a36fb69960878b53b3119387735520ac8361dc58327d","observation_id":"3e95c9a1-a02b-4fb1-9d68-abacccab2a1d","resolution":{"observed_at":"2026-08-02T21:21:41.131210Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.306027Z","title":"Marsal, D","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.306027Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:82d340d8081a170826067700ee45761683bc961252c88832911dbdd38271b7ff","observation_id":"3a321d48-83da-460a-aeb1-c8b40a91a818","resolution":{"observed_at":"2026-08-02T21:21:41.306027Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.424971Z","title":"Singh, S","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.424971Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:e231a4179f3ac6e915e417db12a1003f0afadb16505f7664012a5767967aea0b","observation_id":"6ec42fcf-3eea-400e-a3ca-93f860f8b168","resolution":{"observed_at":"2026-08-02T21:21:41.424971Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.477418Z","title":"Nu˜ nez, S","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.477418Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:11e6a17375806c91c45f1e68fa4d53acb6274c9666c9d4bfd2b83b7c11c41df7","observation_id":"9737f0ee-1ce5-4d73-bd36-3a080de0176d","resolution":{"observed_at":"2026-08-02T21:21:41.477418Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.575954Z","title":"Wada and S","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.575954Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:a095c71db3d83e4b933fc649e52a846fbc34dcc28b34c07f603b8bd9bcd3c68b","observation_id":"953c4a3e-0208-49f8-a4b0-6d94212be4e5","resolution":{"observed_at":"2026-08-02T21:21:41.575954Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2505.09697","last_updated":"2026-07-16T22:12:20Z","snapshot_observed_at":"2026-08-16T14:52:02.819625Z","submitted_at":"2025-05-14T18:00:54Z","title":"Stable Real-Space Invariants and Topology Beyond Symmetry Indicators","version":2},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2505.09697","snapshot_observed_at":"2026-08-02T21:21:41.682123Z","title":"Hwang, V","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.682123Z"},"links":{"cited_paper":"/paper/2505.09697","citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:db5faee2293d0f8e9af975800c4bf04f04fcd05793c3f52237e65ccdba75d842","observation_id":"78bd180c-a66f-4bdb-962a-bef9c9cee837","resolution":{"observed_at":"2026-08-02T21:21:41.682123Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.805482Z","title":"Herzog-Arbeitman, V","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.805482Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:49605ad901a6ab910d442cbe17e6f2902a7860c3ae61c74324214cfe545d1623","observation_id":"5c44d4a0-794c-4efc-af02-87139b6529eb","resolution":{"observed_at":"2026-08-02T21:21:41.805482Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.862016Z","title":null,"venue":null,"work_id":null,"year":1937},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.862016Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:1046d5e06005d7ca8ab015c983e0dbe620d6b38c435b93f61f60465a3c296eda","observation_id":"e42e8bee-d9a8-46de-a289-3492dcc19429","resolution":{"observed_at":"2026-08-02T21:21:41.862016Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:41.955810Z","title":null,"venue":null,"work_id":null,"year":1979},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:41.955810Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:45fa932083a9d7c07482919795f7c5a11efe3e81db55d2ea4155aa9a754c7ed7","observation_id":"7a51648c-7a91-4bfa-af4f-6cc7dfcd1b73","resolution":{"observed_at":"2026-08-02T21:21:41.955810Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.139924Z","title":null,"venue":null,"work_id":null,"year":2099},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.139924Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:d4c130c357391401927d30302eeb1694952c9e6c37f2ad57ccf7c97af2c87b2e","observation_id":"39f2222b-2f17-4608-b8bb-da92d56e0113","resolution":{"observed_at":"2026-08-02T21:21:42.139924Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.298686Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.298686Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:0a4d3dee64ecb7f5446223c91805a322e8a859b5968f01580c24242d751b74f8","observation_id":"2ff1f51f-e8f9-4aeb-9245-22cec5ccdb3a","resolution":{"observed_at":"2026-08-02T21:21:42.298686Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.404951Z","title":"Schindler, M","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.404951Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:a347b33c4e4a7c9b006a2e6522f2432d2824ec55be14f3fab89278d9069d4b31","observation_id":"c01667ca-39c2-427b-a3f9-bbe0409ec16b","resolution":{"observed_at":"2026-08-02T21:21:42.404951Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.518463Z","title":null,"venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.518463Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:510d38f4b323c511e908a185d4992053879428163e7f7486f535a6a5a585ea88","observation_id":"2dc32546-9898-46e5-8e94-a5c84b50565f","resolution":{"observed_at":"2026-08-02T21:21:42.518463Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.638225Z","title":"Fu and C","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.638225Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:b7c6f0e31fb2ac6d28120f9d7a5cfd73f19a50f94154091faa1e833e99ffe648","observation_id":"287c4c1d-bb65-4707-99df-1e0235146eac","resolution":{"observed_at":"2026-08-02T21:21:42.638225Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.706301Z","title":"Takao, H","venue":null,"work_id":null,"year":1981},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.706301Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:e12a4a3b1db98214b1a228865ac9c71e92804b81c2d8934c370408f2e8159be4","observation_id":"c2097724-d16d-4c6f-a175-226862bbb08a","resolution":{"observed_at":"2026-08-02T21:21:42.706301Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.780936Z","title":null,"venue":null,"work_id":null,"year":1993},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.780936Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:926192c5c3ed6fc7c9741682849499dfdd8dbca3723055170ef97c748d77772e","observation_id":"334bb43b-083e-439d-b810-8318d47421b1","resolution":{"observed_at":"2026-08-02T21:21:42.780936Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.854207Z","title":"Vanderbilt and R","venue":null,"work_id":null,"year":1993},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.854207Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:130e582ae0dca45b47280ec90a7da63033a473bdc528d50b754ee512d29173c4","observation_id":"aa42841a-15c4-4ed1-8859-9b80303f3aa8","resolution":{"observed_at":"2026-08-02T21:21:42.854207Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:42.932219Z","title":"Alexandradinata, X","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:42.932219Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:6a1cc3559810271084a5cb331fadad15908eddef9fe58c7c42e3e34887bfa0b7","observation_id":"b916cbc4-ee1b-4b0d-ba4c-8da4563c0069","resolution":{"observed_at":"2026-08-02T21:21:42.932219Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.018516Z","title":"Imura, Y","venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.018516Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:9efbdd1034bf69a7d09d1ea3493d2ce1205e5ec6a0d0b5020af0c0e0e8010aca","observation_id":"0ad52e8a-1313-4351-a362-d35e25ecbafa","resolution":{"observed_at":"2026-08-02T21:21:43.018516Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.124679Z","title":"Hitomi, T","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":62,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.124679Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:c1be3de0029a02f78eca5052ede6096895a24c143fddaf66caa4473c1db0dc13","observation_id":"cb0f4429-fd7d-410a-b581-89cae6dd455a","resolution":{"observed_at":"2026-08-02T21:21:43.124679Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.244345Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.244345Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:035676f2698cefe8d162ae07696e5a97f2dd1e9a4a6031b192bb25917c648d4f","observation_id":"89ce818b-f1cc-4b9c-ad20-924b24196952","resolution":{"observed_at":"2026-08-02T21:21:43.244345Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.328566Z","title":"Resta, Macroscopic polarization in crystalline di- electrics: the geometric phase approach, Rev","venue":null,"work_id":null,"year":1994},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":64,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.328566Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:038f71cb79818e4d4c3cd248d968aafd387a3d1afb4c96dd0c65d1a32e152573","observation_id":"ab3021f5-68f3-44e7-b469-2dd75c4c2bce","resolution":{"observed_at":"2026-08-02T21:21:43.328566Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.427601Z","title":"Nakhaee, S","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":65,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.427601Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:81e03fa806f1bf7c8f6c34fba79f8298e9d08a468ee72125d86f65286193c65d","observation_id":"ef9a1f8f-62a1-4f7a-a8a3-ebbf884a2bb4","resolution":{"observed_at":"2026-08-02T21:21:43.427601Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.574671Z","title":null,"venue":null,"work_id":null,"year":1954},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":66,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.574671Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:26e48f35fb30d270322cd53b26c68616493c0317c432780aa92c55659ce98eb7","observation_id":"ba68fce7-306f-4c38-a909-3bcf7cf28ee4","resolution":{"observed_at":"2026-08-02T21:21:43.574671Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T21:21:43.684798Z","title":"Topological Dislocation Response in Elementary Semiconductors","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors","version":2},"reference_index":67,"source":"pdf_text","source_observed_at":"2026-08-02T21:21:43.684798Z"},"links":{"citing_paper":"/paper/2602.20754"},"observation_digest":"sha256:f19d9e0218db0ac0e017858ac73c9b34895c19099e5ef724068e22f7de03ed4d","observation_id":"c928549b-2b3c-432a-b839-bddfe4971d2e","resolution":{"observed_at":"2026-08-02T21:21:43.684798Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2602.20754","last_updated":"2026-02-25T09:38:32Z","latest_version":2,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-14T10:30:08.037138Z","submitted_at":"2026-02-24T10:33:17Z","title":"Topological Dislocation Response in Elementary Semiconductors"},"reference_resolution":{"displayed":67,"state_counts":{"malformed_identifier":2,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":65,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":67},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"thesis":"As of 16 August 2026, this Paper Citation Record lists 67 of 67 outbound references and 0 inbound Pith citation observations for arXiv:2602.20754."}