{"as_of":"2026-07-21T19:47:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:cd846c81e9e930fd4867eb14a05eaeb9898c3c0ebe7f8c0473495f1e49127f4e","coverage":[{"denominator":74,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":74,"source":"paper_references, paper_reference_links","source_observed_at":"2026-05-15T17:22:34.744378Z","state":"measured"},{"denominator":74,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":74,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-07-21T06:31:05.380196+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2603.02814/citation-record","integrity":"/paper/2603.02814/integrity","json":"/paper/2603.02814/citation-record.json","paper":"/paper/2603.02814"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physreva","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-10T20:17:33.544881Z","title":"Physical Review A33(5), 2913–2927 (1986)","venue":null,"work_id":"7622cbba-e948-42e0-8cd2-290ad3793bc2","year":2018},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:6c2c439d02bcf5eab66846917c9cfaa4936305fec5d32d646febf93e5913c2b6","observation_id":"ecbe58e6-a3b3-4e3b-8713-d9ed8db35c41","resolution":{"observed_at":"2026-05-15T17:26:21.748727Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/revmodphys.85","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"A.et al.Silicon quantum electronics.Reviews of Modern Physics 85, 961–1019 (2013)","venue":null,"work_id":"df9172dd-0d48-47d6-bf78-ec393a492378","year":2013},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:d4b0e7e3432389b81b2503b8d3ccd0e56fbdba36f7725a78258288894fefee83","observation_id":"c4b2a33c-b751-42ff-b719-4b9a380aad4c","resolution":{"observed_at":"2026-05-15T17:26:21.761287Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"94de2ec7-b2cf-445c-a115-ed96b0223958","year":2019},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:5c64e1b9ad0aeb0f45c8ed5fe911bee1fd5f02417091c705e6c1a7b3e28b6eac","observation_id":"b5629ce2-4910-4611-b75e-58bbd679c3d5","resolution":{"observed_at":"2026-05-15T17:30:12.184973Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/nature15263","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-01T05:05:24.752360Z","title":"URL https://doi.org/10.1038/nature15263","venue":null,"work_id":"78cc752c-291b-47d2-abcb-28aa88021238","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:c00ce72160cc5a65d5d1984f5b5533d2b70e41c2f313d22bacc15763efec16b4","observation_id":"19c25c24-6b88-4bea-927c-96bbabaeb3ad","resolution":{"observed_at":"2026-05-15T17:26:21.770477Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s42254-022-00484-w","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-01T01:25:12.343932Z","title":"& Loss, D","venue":null,"work_id":"e3e262ad-b0d0-4fd4-915b-930325d46d8a","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:c4bbe06702648b0270817f7092ba4bb0b567fcbfc26e20a946539485bdaf9735","observation_id":"3cd325ed-c736-484e-a722-49117c32ef0f","resolution":{"observed_at":"2026-05-15T17:26:21.757677Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/ncomms13575","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1038/ncomms13575","venue":null,"work_id":"7d492bb4-e334-4dd6-afdc-0c1d6e353ec2","year":2016},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:887234a10533671e51aa8fe6cb462d6b477e28d02ad6883a28864ab66c5763cc","observation_id":"f4a7a980-ab0b-4274-bcfc-1d6f787a9a43","resolution":{"observed_at":"2026-05-15T17:26:21.739752Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"C.et al.12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line.Nano Letters25, 793–799 (2025)","venue":null,"work_id":"9f97fd74-01c9-42d4-85be-0a156e775178","year":2025},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:57d3074572c38df9000ecb9d4eaa7dd45e0a269628914a6f3a5c54307963a695","observation_id":"079344d5-653a-4526-b028-3e4420cf6a48","resolution":{"observed_at":"2026-05-15T17:30:12.188069Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.03993","last_updated":"2024-09-06T02:45:24Z","snapshot_observed_at":"2026-07-06T19:11:22.631548Z","submitted_at":"2024-09-06T02:45:24Z","title":"CMOS compatibility of semiconductor spin qubits","version":1},"cited_work":{"arxiv_id":"2409.03993","doi":null,"metadata_source":"pith","pith_arxiv_id":"2409.03993","snapshot_observed_at":"2026-07-01T23:06:20.044256Z","title":"CMOS compatibility of semiconductor spin qubits","venue":"cond-mat.mes-hall","work_id":"289d29a3-e738-4514-b001-94d6764c4543","year":2024},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"cited_paper":"/paper/2409.03993","citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:8bdb75fabef18cd14cf67a43bd9379b90224cdfd76f6928300d1a140621c1486","observation_id":"5c07526d-33f7-4c45-934b-80acfbe30015","resolution":{"observed_at":"2026-05-15T17:26:21.766383Z","resolver_source":"local_arxiv","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"9c0729a0-3d98-4026-935e-435c5a92113a","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:b35766ef03c97a72551a556edd1f49f5a19f6e8e9e4c8b941e74977ec002ab04","observation_id":"03d2a010-0fc6-4620-979b-f594acd06a2a","resolution":{"observed_at":"2026-05-15T17:30:12.178773Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41928-019-0234-1","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"H.et al.Silicon qubit fidelities approaching incoherent noise limits via pulse engineering.Nature Electronics2, 151–158 (2019)","venue":null,"work_id":"f1ea403b-463e-4a24-8c0d-2fc7fe686283","year":2019},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:1ad946834f895c5d4906d80ca65b363945a208789a0a3f14bbbbce5311edf293","observation_id":"15ddb1c2-87e3-4efa-bcd1-4d9890473517","resolution":{"observed_at":"2026-05-15T17:26:21.744348Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41565-017-0014-x","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-10T17:27:26.584010Z","title":"URL https://doi.org/10.1038/s41565-017-0014-x","venue":null,"work_id":"613d95c7-6bf6-4fd4-a8dc-3c0fc95d74e4","year":2017},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:35fe3289d431828da758d69cab0cb4b9237e8140ad39beb11a0bb60705515c53","observation_id":"d044680d-daef-4a75-8aa5-db336a954a93","resolution":{"observed_at":"2026-05-15T17:26:21.753346Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2507.11918","last_updated":"2026-07-15T08:10:59Z","snapshot_observed_at":"2026-07-18T23:17:59.373248Z","submitted_at":"2025-07-16T05:26:40Z","title":"Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array","version":2},"cited_work":{"arxiv_id":"2507.11918","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2507.11918","snapshot_observed_at":"2026-07-16T01:22:26.174192Z","title":"URL https://arxiv.org/abs/2507.11918","venue":null,"work_id":"1300c644-3bf2-47d9-be28-a3745e307ade","year":2025},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"cited_paper":"/paper/2507.11918","citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:a429ec60ba8a194c3110947481c25b76c6c76d5ed02bd24b8936db53b9d5a301","observation_id":"62a8430d-c0ca-438c-95c6-63d6deb55f9d","resolution":{"observed_at":"2026-07-16T01:22:26.174192Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://api.semanticscholar.org/ CorpusID:273502149","venue":null,"work_id":"5be4e3b0-123a-44e8-98f4-792276661fac","year":2024},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:3709989097af877fc372485c65c1875c78d8495e9f984cde43bed42a68f1f6e4","observation_id":"c836e98e-cfea-4031-a2d6-fa4d451146fd","resolution":{"observed_at":"2026-05-15T17:30:12.181661Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1126/sciadv.abn5130","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-01T05:45:25.438469Z","title":"R.et al.Two-qubit silicon quantum processor with operation fidelity exceeding 99%.Science Advances8, eabn5130 (2022)","venue":null,"work_id":"94022119-8ecf-4e2f-8cf8-a5fa8a2924d2","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:3dfdc46ed43f6390a7a080dcc01834bd39a5198fcfaffd9e7365f681d98bf625","observation_id":"a3a49ba4-c74f-496c-9398-81f5fa446a8d","resolution":{"observed_at":"2026-05-15T17:26:21.909978Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-14T15:19:57.984448+00:00","source":"crossref_status_cache"},{"observed_at":"2026-07-14T15:19:57.984448+00:00","source":"openalex_status_cache"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1038/ s41586-021-04182-y","venue":null,"work_id":"6ef478c0-c345-439b-ad24-059e85e51aeb","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:1632e314fe08be841e3dc3bedd74e639ba531b94eedd472cbf92cfb7aadbba85","observation_id":"f2a486d3-02e9-40fd-83a6-9562f89bfcb9","resolution":{"observed_at":"2026-05-15T17:30:12.151101Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"H.et al.Operation of a silicon quantum processor unit cell above one kelvin.Nature580, 350–354 (2020)","venue":null,"work_id":"2b136503-1dae-464a-87ec-58242b17881a","year":2020},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:64b7698b0191e0fb572d83ecc9a89ebcd060e0e73165eb0d47c21db10d66a456","observation_id":"0b44fefb-b708-4a89-bf60-33badce5803b","resolution":{"observed_at":"2026-05-15T17:30:12.175706Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41586-020-2170-7","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1038/s41586-020-2170-7","venue":null,"work_id":"65627a1f-4f9d-4554-9f0a-4e1d3bb2cb9c","year":2020},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:d52b868f2b4dbde9b8948c67ca0f84712ccb28cb5ee5dd2465ef58a742d74361","observation_id":"2c04b0a3-802f-409c-a589-06a3bd1beda7","resolution":{"observed_at":"2026-05-15T17:26:21.869970Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Y.et al.High-fidelity spin qubit operation and algorithmic initial- ization above 1 k.Nature627, 772–777 (2024)","venue":null,"work_id":"99e66b33-caf5-460d-9a43-8c2afe7482ec","year":2024},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:2aaedab48508c88c5fe550bf149b5c3bf8522b40bf72cae0438b8c2eaccea2bd","observation_id":"3ffd5703-a42b-4812-bccc-b483bfe7cdac","resolution":{"observed_at":"2026-05-15T17:30:12.170557Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physreva.86.032324","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-10T17:27:26.622861Z","title":"Fowler, Matteo Mariantoni, John M","venue":"Physical Review A","work_id":"f0f17544-90eb-4db0-9700-e3b82d7dde3f","year":2012},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:69c8f98344980b07e1e9a7022ee2dfde1aa34ac9a0dd336819395067684cdbd7","observation_id":"312eec03-954a-40bf-9753-51d0ccc41f6a","resolution":{"observed_at":"2026-05-15T17:26:21.810595Z","resolver_source":"doi","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-12T14:19:52.334141+00:00","source":"crossref_status_cache"},{"observed_at":"2026-07-12T14:19:52.334141+00:00","source":"openalex_status_cache"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"dc4a077e-e27f-4fdc-bfb1-0af519d5e916","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:841597ceda89aa1df79d628ddf5f4383f4b1f68fd427d6f75e60a19313d3137d","observation_id":"cb54151d-dbfb-4050-9290-437605f89de8","resolution":{"observed_at":"2026-05-15T17:30:12.164169Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"J.et al.Low-frequency charge noise inSi/SiGequantum dots","venue":null,"work_id":"fa91e266-8994-421c-842c-3c3dd367743b","year":2019},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:14508716c6ab7fe83c075ed9a715f91bd5af38310da2e0eb5237df188a40a693","observation_id":"99dad0df-90e8-4d05-93f5-eeb6a52fb1b3","resolution":{"observed_at":"2026-05-15T17:30:12.124924Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10","venue":null,"work_id":"6711d516-69ad-4984-a417-44b9e53dd091","year":2020},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:9ef379e859b560c8eebbf5dc3b499130409ede56fc5bf1426318a7a9d3936488","observation_id":"e27a0f08-a154-47f6-b67a-a20e3153ffd8","resolution":{"observed_at":"2026-05-15T17:30:12.111982Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-022-28519-x","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-01T01:25:12.331335Z","title":"J.et al.Charge-noise spectroscopy ofSi/SiGequantum dots via dynamically-decoupled exchange oscillations.Nature Communications13, 940 (2022)","venue":null,"work_id":"71ec1d75-fa6c-4889-ad31-a6116b658aa1","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:1c512a43b26c7994663662c6a62680afc46cc6edfeb9a677e6fc02ad0f19ab70","observation_id":"e78def74-2018-4024-81ee-10bd1c06ea96","resolution":{"observed_at":"2026-05-15T17:26:21.888425Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-023-36951-w","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https: //doi.org/10.1038/s41467-023-36951-w","venue":null,"work_id":"7613bffc-675a-4933-8326-b04c68caf30e","year":2023},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7dffc0470b26c2a7da615b403eca49c705dd5ab1333bdb1e530e5b0020253cff","observation_id":"32649440-f750-4815-a1f5-9b16d2d800a1","resolution":{"observed_at":"2026-05-15T17:26:21.830399Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[{"edge_observation":{"observed_at":"2026-07-11T03:19:00.50749+00:00","source":"paper_reference_links","state":"open"},"event_date":"2023-04-06","event_type":"correction","notice_doi":"10.1038/s41467-023-37548-z","provenance":{"observed_at":"2026-07-11T03:02:46.385894+00:00","source":"crossref","source_record_id":"10.1038/s41467-023-37548-z->10.1038/s41467-023-36951-w:correction"}}],"reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/srep38127","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"C.et al.Passivation and characterization of charge defects in ambipolar silicon quantum dots.Scientific Reports6, 38127 (2016)","venue":null,"work_id":"bcee29b9-f739-4a94-a29a-42b1c35d1417","year":2016},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:11aa2a3153b421b47c504e1b91a21be3b7be029ada8466cf4a3e7ae498cc5ffc","observation_id":"1cf5ce4b-f58b-49f6-93b9-ce45583088c1","resolution":{"observed_at":"2026-05-15T17:26:21.815110Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3194778","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-10T17:27:26.617674Z","title":"URL https://doi.org/10.1063/1.3194778","venue":null,"work_id":"913c5e80-8981-4479-8925-09786170df8f","year":2009},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:289235b43361440f3928e0d1c9986c763fb1c9d7389add913584d51f2d0501e7","observation_id":"cc618869-579d-4386-88d4-0c534d12f5c6","resolution":{"observed_at":"2026-05-15T17:26:21.850983Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0151029","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https: //doi.org/10.1063/5.0151029","venue":null,"work_id":"d7c222db-bf08-4a8e-9b46-003e320126d1","year":2023},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:9beaecd12ab6d562090b378d853822054154e303a5975165ba607e5e2c12bea7","observation_id":"45b2c66c-8a4d-45a4-8921-3e1f4829078e","resolution":{"observed_at":"2026-05-15T17:26:21.896813Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"dee41708-d64c-40d9-8f85-20275336a531","year":1957},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:4c1c2870b4052e41a9a7c766568f76c8d6edea9cf4b530625557c5c915ec729f","observation_id":"a1b911b2-2c7e-4f21-af7b-08d4c3095de8","resolution":{"observed_at":"2026-05-15T17:30:12.141727Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"& Horn, P","venue":null,"work_id":"db863352-224f-48a6-9b2e-194ef5edaf57","year":1981},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7142276e1bea68e0f31ee4b2edd97e1adc150bd01055084293da8087258f4963","observation_id":"7afd9d0f-a54d-42e7-aece-94ad40bf88bc","resolution":{"observed_at":"2026-05-15T17:30:12.138574Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://link.aps.org/doi/10.1103/ PhysRevApplied.12.014013","venue":null,"work_id":"719686b2-1c2b-455c-a9bf-199d7381e1fc","year":2019},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:18241c16ca6259a4b0be11916ca0d847de6bdff3435b9186595a3685ed8b25b2","observation_id":"44997127-0a1e-4266-9a81-13e4e5a978aa","resolution":{"observed_at":"2026-05-15T17:30:12.109304Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1088/2633-4356/ac40f4","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"N.et al.High mobility simosfets fabricated in a full 300 mm CMOSprocess.Materials for Quantum Technology1, 041001 (2021)","venue":null,"work_id":"4eee5952-8fe0-4385-9a3f-0e2bcc56ae6c","year":2021},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:6b363e8830f020a15f54fe1f6666aa281ff0f82ebab0fcf0520c2d00b79ce339","observation_id":"fc9995e3-6cd6-4a3c-afaa-7c5e9da97b0e","resolution":{"observed_at":"2026-05-15T17:26:21.847345Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/g29w-st3q","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"P.et al.Holes in silicon are heavier than expected: Transport prop- erties of extremely high mobility electrons and holes in silicon mosfets.Physical Review B– (2025)","venue":null,"work_id":"437d6820-c51e-479d-bdbb-7e8f5483f8ad","year":2025},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:066384d7ab4efa690758cc1b6ad4b16235ffd4df7672c719de3760929b93ca67","observation_id":"a0d9a5e1-8b6e-4092-9d3f-e2af1f5ae5d9","resolution":{"observed_at":"2026-05-15T17:26:21.796950Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/nl070949k","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"J.et al.Gate-defined quantum dots in intrinsic silicon.Nano Letters 7, 2051–2055 (2007)","venue":null,"work_id":"ccfb5a2e-05b7-487c-ade4-cf0a0795dd95","year":2051},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:d77c811999165434e0967066c7772feaff1a7fad7a5215c8e6e2a16ac0fab4a5","observation_id":"b28be378-57ce-463f-b3ca-6cdc33f44cab","resolution":{"observed_at":"2026-05-15T17:26:21.792530Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"H.et al.Electrostatically defined few-electron double quantum dot in silicon.Applied Physics Letters94, 173502 (2009)","venue":null,"work_id":"8a9b5447-2c03-4e40-9aab-2f63aab65f0a","year":2009},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:17a67d6f07f5b7967c1e566131f5149af08fbd893de5d9d98da676bf6faec8e6","observation_id":"b5fece1a-ded5-4254-b5b3-08fa3a35243f","resolution":{"observed_at":"2026-05-15T17:30:12.154684Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"document/9492427","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"569a9d45-76b3-4507-9023-956c77466c7c","year":2021},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:52147bf34782b8086e689ca71314500d98affff4a302cdaee2a7e04f8b68d5e0","observation_id":"7a884eb1-3ed2-4227-bd08-d6ac861f7418","resolution":{"observed_at":"2026-05-15T17:26:22.300351Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4928320","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-27T12:50:55.609092Z","title":"& Zimmerman, N","venue":null,"work_id":"1fe130af-8570-4cd3-af1f-cf7817451a7d","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7725dfd0eb1b3f2eaf80bbe609da9c2870d536e8f8d00683f14f792163b9f801","observation_id":"33485e0e-35b8-487e-bd95-b2a85b89e826","resolution":{"observed_at":"2026-05-15T17:26:21.774559Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10","venue":null,"work_id":"6d78f729-920e-4114-910d-fcb1dbd6893a","year":2024},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:81b71fc103f22bee22a8d98b9ace6a23d9b68554f1d73191b1d09eae135d79c4","observation_id":"e7f8ae48-d8a5-4a72-b1cd-84ec4926c7ef","resolution":{"observed_at":"2026-05-15T17:30:12.130846Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1088/1361-6528/aaabf5","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"C.et al.A fabrication guide for planar silicon quantum dot heterostructures.Nanotechnology29, 143001 (2018)","venue":null,"work_id":"9944db83-e6cd-494f-9bcf-bf9bc34e968d","year":2018},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7a69dce6e6491e2ae187b465b9d2fb2957c17dd140e0fc8ae399dfbfe0a9ea4b","observation_id":"7490eceb-6978-4074-bccd-33301cfb0d32","resolution":{"observed_at":"2026-05-15T17:26:21.826503Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41598-018-24004-y","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1038/s41598-018-24004-y","venue":null,"work_id":"d8ca3666-d3f8-45f7-9fca-21c095ce6757","year":2018},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:e872be7737d75cd6361c427c54b1d38a0408d99601f48a1f0f6ab6aae8502980","observation_id":"fbe14412-35fe-4f80-99c9-43386e646979","resolution":{"observed_at":"2026-05-15T17:26:21.801184Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1940727","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"1806b434-f175-4ecb-84d1-4c1348744c98","year":2005},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:6f1fc2378361a3309c29800af3e7dc7f02281e408d64ddfc2a9c1379ee0a358c","observation_id":"2c648a1a-b109-4267-a4cb-c6641eeab33a","resolution":{"observed_at":"2026-05-15T17:26:21.835257Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/cr900056b","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"6b31b9bb-9da4-456b-abdc-6e9f2f929bc6","year":2010},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:c39c55794ccf982bf64f2386f2a54276afbd1907117cb37d9b7336d7d5cdfb11","observation_id":"db5e73b4-9103-44b0-84de-d5b586b97322","resolution":{"observed_at":"2026-05-15T17:26:21.900586Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3497014","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1063/1.3497014","venue":null,"work_id":"bb483df8-f2d6-4eea-b1f5-78bd994269fe","year":2010},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:3ff8b07437db453b666a2a81ea0b79249ec62fd67fcc936b7c6aca673bd34b6c","observation_id":"6b66d882-b812-4fc4-942b-501a0778c11c","resolution":{"observed_at":"2026-05-15T17:26:21.818815Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1186/ s11671-015-0883-6","venue":null,"work_id":"b615986e-e30c-4b08-93b9-e53fafc47c2b","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:84a6e30317d499b72c27af0967749c30bfc2b095fb48c6cf1db75540dc45e704","observation_id":"9bb4fdd3-b129-42db-84a7-f5ef48d3b00c","resolution":{"observed_at":"2026-05-15T17:30:12.127907Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"daa4cdfa-e8ff-45d5-bbb1-18ab4d174977","year":2012},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:fa7dcd3c66708266878cb49642613599ef464f4da27d404c102b4e7a5d0f7d96","observation_id":"c126b0fb-54ad-42ab-85ea-9324da089604","resolution":{"observed_at":"2026-05-15T17:30:12.114881Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/b007249o","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"L.et al.Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina.Physical Chemistry Chemical Physics3, 1093–1102 (2001)","venue":null,"work_id":"9addcb2c-d002-46a6-ad33-db81ed26379e","year":2001},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:1d05498c97883c65eb6c8128c58b6b00cef3c40ab5e0edbf277594973825d7d8","observation_id":"4b3dc307-2b10-4109-8667-9cc312add105","resolution":{"observed_at":"2026-05-15T17:26:21.842868Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4922267","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1063/1.4922267","venue":null,"work_id":"8f01a7d7-a8b0-4a67-81a1-7aed58c2be1f","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:ef5a461f417e883239cbff74b5592e6359e953d1bfc6a87a1bc75d8c8a15f766","observation_id":"c66edf59-5af5-452e-8282-e84e06aca19c","resolution":{"observed_at":"2026-05-15T17:26:21.866221Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41598-022-09054-7","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1038/s41598-022-09054-7","venue":null,"work_id":"c6c14fff-27d1-4bf8-95b7-09b25aa5ba53","year":2022},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:0faff5d30e0466b2b5cb0ab25d44f4618e6a1f8ea33b441abd31736dbf1fefdb","observation_id":"1c6a15b7-e2d1-43b1-8b07-7e51a76969b1","resolution":{"observed_at":"2026-05-15T17:26:21.917340Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"M.et al.Characterization of electrical traps formed inAl2O3 under variousALDconditions.Materials13(2020)","venue":null,"work_id":"b1f63c4b-5085-48a4-adf9-f1fd027dd34e","year":2020},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:2fef98c205779f578b36b88c4adbf732720f7013510225cda472c2e13cf31445","observation_id":"926c3859-9cad-4b0e-8651-a5e97ed1a7f4","resolution":{"observed_at":"2026-05-15T17:30:12.134418Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.7567/jjap.55.04eb03","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://dx.doi.org/10.7567/JJAP.55.04EB03","venue":null,"work_id":"cfffe46f-ecde-48b3-8a8d-e88d30735493","year":2016},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:91fcfb5a22089747b41b1953a53eca913f589faa80169e7f298d86fc3aba13c3","observation_id":"23d1ff2e-f38b-4502-a787-656ccb882df1","resolution":{"observed_at":"2026-05-15T17:26:21.858785Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://www.sciencedirect.com/science/article/pii/ S2468023023011288","venue":null,"work_id":"7efa3e12-7f3b-4264-91d6-f4dae637c432","year":2024},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:64166a3b794e106734d23bd7ede1cf196122e8f9071f84a335b23066d3173a5a","observation_id":"90751ce8-39c1-4eb8-8f14-689836498e0b","resolution":{"observed_at":"2026-05-15T17:30:12.144879Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsaelm.1c00565","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"95869746-991f-4605-93fd-cc4bc45252c0","year":2021},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:f0628031c27a08627a2feded4e6302b9d76d9517beeece720e987823b5e03e0c","observation_id":"67204cd8-2a3c-4d99-9d1c-12b4e004a4e2","resolution":{"observed_at":"2026-05-15T17:26:21.862509Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.35848/1882-0786/acdc82","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/ 10.35848/1882-0786/acdc82","venue":null,"work_id":"3a72c97a-ad0b-4d35-8bc0-266c186dad04","year":2023},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:e182caa2b02e9ec1f30e93ecab1b822ffa18d2bc435ea133bc5820c2b30d35da","observation_id":"bb336967-da20-48dd-b9cd-a276da3a67b2","resolution":{"observed_at":"2026-05-15T17:26:21.838971Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"L.et al.Negative oxygen vacancies inHfO2 as charge traps in high- κstacks.Applied Physics Letters89, 082908 (2006)","venue":null,"work_id":"21ff659a-491c-4ec6-9743-d1c58aa8fd89","year":2006},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:e4b7898b3d1a45e68ca4138cc6709caf1b724467daeef3a50e6693c409e2724a","observation_id":"d86eb40c-ef45-44f9-abb5-fb0092626926","resolution":{"observed_at":"2026-05-15T17:30:12.148028Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/c4cp04957h","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL http://dx.doi.org/10.1039/C4CP04957H","venue":null,"work_id":"e24720c6-6071-403c-8d79-1ac4793a2a47","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:74ab1e98fb9e4f0909e3d4825b2824e95ef49516da8f448c02a1f5a5d0849f5d","observation_id":"b7822430-7da4-4d9b-b617-dc2a2377917c","resolution":{"observed_at":"2026-05-15T17:26:21.778605Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.2387126","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"0cfeca59-3535-469a-aa69-19c85157a201","year":2006},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:8d73cc391cf64b7f1c6d3c6742aab64b7b1abfc52795fa2bd582585ec371625d","observation_id":"7f210cef-2aac-493a-b041-b14cdcd07fe6","resolution":{"observed_at":"2026-05-15T17:26:21.783631Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"9fd0c516-05c6-4b7e-920b-70bbb4364794","year":2008},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:68b641a68ca0acd2038631ea303e11084574cb9bef2655dce48d13c4d9426bf5","observation_id":"364b1992-178e-4f95-add8-10886d959fd4","resolution":{"observed_at":"2026-05-15T17:30:12.173160Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0061369","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"M.et al.Alternatives to aluminum gates for silicon quantum devices: Defects and strain.Journal of Applied Physics130, 115102 (2021)","venue":null,"work_id":"f3ce15bf-492e-4925-8ace-0192cdcb65df","year":2021},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:c24699ec3f53246a5411415558625ec75abc625c45813e3a09d333687c34e26f","observation_id":"0609d843-65cf-4c92-8289-8c2ce61e332a","resolution":{"observed_at":"2026-05-15T17:26:21.873850Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.79.235307","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"A.et al.Observation of percolation-induced two-dimensional metal- insulator transition in aSi MOSFET.Physical Review B79, 235307 (2009)","venue":null,"work_id":"ae766a62-8261-4952-bdc2-9610b8b01f4e","year":2009},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:fe5516461e381b8cf7114b3dae752dc11f4188e77a3c9f38ee8ae8153d7e6831","observation_id":"bfc963b9-c04b-4e6a-89e7-82c09d9f3ced","resolution":{"observed_at":"2026-05-15T17:26:21.892375Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4979035","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1063/1.4979035","venue":null,"work_id":"ed853e97-8965-4273-a783-2489ce99fef7","year":2017},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:3d641abc00b2536b61e6ba3e07023dfc9c6f8b6300a3a87052b6919192b84e90","observation_id":"76681d2a-a019-4b3d-9ace-b6db2d6af1dc","resolution":{"observed_at":"2026-05-15T17:26:21.904973Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"451cd98b-ddb3-40b0-ae08-6a74e63de81a","year":2011},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:c7bd8c7fe878961509b500e8c4cb4af0b52d7fb2c4a3bb2957bd486e912e2895","observation_id":"881abcbf-2421-4d96-9ca6-62f7114282e1","resolution":{"observed_at":"2026-05-15T17:30:12.157737Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://www.sciencedirect.com/science/ article/pii/S003960289800020X","venue":null,"work_id":"85a74c47-4667-4632-b90b-b6463bd47ab8","year":1998},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":62,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:f9260638a43579dd7b2d1d91c422f83690b4fb31f6cf2b0c253de44688babb79","observation_id":"60284c49-88b9-4d91-9edf-f0a2a6030c79","resolution":{"observed_at":"2026-05-15T17:30:12.167301Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.1953866","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://doi.org/10.1063/1.1953866","venue":null,"work_id":"290f83a1-e54d-4e39-8be7-d40830417a49","year":2005},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":63,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:b58644894b37d164b0e9117a903aa1c4d64e704656bce66897a326a1389bad40","observation_id":"f3b9fe9b-7976-4006-ae5b-9a9086d8a245","resolution":{"observed_at":"2026-05-15T17:26:21.788061Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"pii/0250687","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Hydrogen sensitive mos-structures: Part 1: Principles and applica- tions.Sensors and Actuators1, 403–426 (1981)","venue":null,"work_id":"4db95e1f-1a72-4603-8ac0-d2a2e541060e","year":1981},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":64,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:1e72992aa8e13ad0141507adcfc9966ed6866c54c42e39da35e696e4bbfa9555","observation_id":"3719b351-72dc-4a9e-b433-1b91c4a57dc0","resolution":{"observed_at":"2026-05-15T17:26:22.294481Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"pii/0925400","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":null,"venue":null,"work_id":"19b620a8-4781-43a3-9b69-35876dfb5560","year":1990},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":66,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:de4b2a95dbfbacde86cc2d4002d244118773b33b0650aade2e3fe56ddd420030","observation_id":"b9a8a781-d1d2-4568-8634-819114464279","resolution":{"observed_at":"2026-05-15T17:26:22.306333Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"H.et al.Temperature and interface-roughness dependence of the electron mobility in high-mobilitySi(100)inversion layers below 4.2 k.Phys- ical Review B43, 6642–6649 (1991)","venue":null,"work_id":"38839f69-445e-4b3a-b0b0-7041b204d1ef","year":1991},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":67,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7de69fc5cf2b846afe21d7321a6f45b0c5ffd57a9d2792c1bd1b82ad78ef1c89","observation_id":"c737fe05-3408-4def-b5f3-c488ba0f590e","resolution":{"observed_at":"2026-05-15T17:30:12.161422Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"& Dolgopolov, V","venue":null,"work_id":"90442f91-a682-431b-a7df-773cedbee8d8","year":1986},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":68,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:38c1d1078a0a66a9045c4b20e3d1c45e46525358a279bf60a319efff69f893ba","observation_id":"38f4f77a-111f-41ed-b641-442b220925fe","resolution":{"observed_at":"2026-05-15T17:30:12.118736Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevlett.110.146804","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"E.et al.Charge noise spectroscopy using coherent exchange oscillations in a singlet-triplet qubit.Physical Review Letters110, 146804 (2013)","venue":null,"work_id":"35b3bc4f-7c3d-4071-955d-22d50ae7bf72","year":2013},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":69,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:87e88a2bbc299c461d16f310b7c48bbb9e1f8b1c765a80fcb61da46e4ad8b84e","observation_id":"7c39a209-6817-45ad-8499-59fd2753c497","resolution":{"observed_at":"2026-05-15T17:26:21.805677Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://link.aps.org/doi/10.1103/ PhysRevApplied.14.024066","venue":null,"work_id":"caec3ec7-3e1d-4596-bf43-4818534b0a26","year":2020},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":70,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:f3d2e5657ce731c06228fa83295553dffdee11a720b703c010673dcaac6b6767","observation_id":"95aa6ce7-7c60-4996-92f2-766f1d80a461","resolution":{"observed_at":"2026-05-15T17:30:12.122002Z","resolver_source":"raw_fallback","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2506.15956","last_updated":"2025-07-07T08:07:01Z","snapshot_observed_at":"2026-07-06T21:44:32.853406Z","submitted_at":"2025-06-19T01:50:14Z","title":"Scalable quantum current source on commercial CMOS process technology","version":2},"cited_work":{"arxiv_id":"2506.15956","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2506.15956","snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://arxiv.org/ abs/2506.15956","venue":null,"work_id":"24c971fc-8f3d-4cec-a5f3-3ed70c749028","year":2025},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":71,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"cited_paper":"/paper/2506.15956","citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:0693cabfcd8ba9ae2ac4bd0f6d6d3710dc3a26e4928354a8e44f909b85e6869c","observation_id":"ef586542-1e8c-4c2f-91e7-139cdba59daf","resolution":{"observed_at":"2026-05-15T17:26:22.311698Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-04T14:59:54.605984Z","title":"The Journal of Chemical Physics 132(21), 214102 (2010)","venue":null,"work_id":"c2c11f21-2561-4947-816f-a28b4cdf4196","year":2001},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":72,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:8e2c97d6a93186784bd73f815dd0019ddfaa34fde15eef80387a7596c762907a","observation_id":"0fde7a4d-7e26-4644-b653-849e0ac647fe","resolution":{"observed_at":"2026-05-15T17:26:21.823201Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1088/1367-2630/12/11/113033","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://dx.doi.org/10.1088/1367-2630/12/11/113033","venue":null,"work_id":"234f0ffb-ddbc-48e6-98f6-b428df0e9a7d","year":2010},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":73,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:2f00336d0abf83de52d71192038879bc2181fc999f53284e7382f5934c041d9d","observation_id":"9c9be255-14af-44fc-bde6-40c4ffcc78e4","resolution":{"observed_at":"2026-05-15T17:26:21.877518Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1209/epl/i2004-10454-4","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"resistance overshoot","venue":null,"work_id":"f49edc1b-6e65-4c7b-80cd-261b9e5aa60c","year":2005},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":74,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:7add08b063c0d76eae0cf1d67a419f5ef957e72df7f95dcce815ea6793209870","observation_id":"fa90b27a-39dd-419d-87ad-c2ac1d464e87","resolution":{"observed_at":"2026-05-15T17:26:21.913651Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssc","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc","venue":null,"work_id":"726d8d22-2f0a-40f2-aa08-c635dbe41a8a","year":2006},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":75,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:60a1257d4ab1379665f068584cbf4c7f0cf1f5d0f1cd689dec86c2edbae92540","observation_id":"96b2095b-b04b-43c5-b272-9d1a2c2297bc","resolution":{"observed_at":"2026-05-15T17:26:21.883166Z","resolver_source":"doi_truncated","status":"malformed_identifier"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.92.035304","metadata_source":"doi_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"URL https://link.aps.org/doi/10.1103/PhysRevB.92.035304","venue":null,"work_id":"dfb3f2b5-1b72-4ce4-b97c-30a1f974ea07","year":2015},"citing_paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices","version":2},"reference_index":76,"source":"pdf_text","source_observed_at":"2026-05-15T17:22:34.744378Z"},"links":{"citing_paper":"/paper/2603.02814"},"observation_digest":"sha256:9629e03162589709fa3faed82eccdddb9b72f48d7a3bb5c539e0415fc1c43db0","observation_id":"03e46ab0-b68f-4800-b9ec-a12d950e80cd","resolution":{"observed_at":"2026-05-15T17:26:21.854607Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-07-21T06:31:05.380196+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2603.02814","last_updated":"2026-04-05T11:16:40Z","latest_version":2,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-07-06T22:47:41.997192Z","submitted_at":"2026-03-03T10:05:13Z","title":"Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices"},"reference_resolution":{"displayed":74,"state_counts":{"malformed_identifier":17,"metadata_mismatch":1,"parse_uncertain":0,"unresolved":0,"verified_exact":44,"verified_fuzzy":12},"total_outbound_references":74},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-07-21T06:31:05.380196+00:00","source":"crossref"},{"observed_at":"2026-07-21T06:31:00.184556+00:00","source":"retraction_watch"}],"thesis":"As of 21 July 2026, this Paper Citation Record lists 74 of 74 outbound references and 0 inbound Pith citation observations for arXiv:2603.02814."}