{"as_of":"2026-08-10T18:11:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:942c44082e2484bd949ae809461c33fcf35def9f700e8390bb0cb90ae6ae8165","coverage":[{"denominator":26,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":26,"source":"paper_references, paper_reference_links","source_observed_at":"2026-05-10T14:59:00.460635Z","state":"measured"},{"denominator":26,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":26,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-10T06:31:04.303077+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2604.11149/citation-record","integrity":"/paper/2604.11149/integrity","json":"/paper/2604.11149/citation-record.json","paper":"/paper/2604.11149"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"9574.2021","doi":"10.1109/iedm19574.2021.9720503","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp","venue":"2021 IEEE International Electron Devices Meeting (IEDM)","work_id":"a553c82c-19b9-4c13-b23f-8e7f7b176813","year":2021},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:6b63c96f0d2dc4745f9cde6d076fe1128df8c218787ace25ea338e22b1d1ecc7","observation_id":"75fd38e0-85e8-480c-8e22-e3ae629441d0","resolution":{"observed_at":"2026-05-10T15:00:30.494844Z","resolver_source":"arxiv_id","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.sse.2018.11.005","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Two-step degradation of a-InGaZnO thin film transistors under DC bias stress","venue":"Solid-State Electronics","work_id":"e36cadb5-6d25-4bae-b9b1-1da348fd1754","year":2019},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:bc2b4a591c509b59abfe2fa74214ac0e565e56298d831cdfeaa23ba82df9eb8f","observation_id":"cbc27ba6-3ed6-4054-bf82-65759c50a036","resolution":{"observed_at":"2026-05-10T15:00:30.514158Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices","venue":null,"work_id":"82dc2958-4fbc-4ea3-aeab-2a5c46eba2e4","year":2021},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:121287ee1500d514466332b2e748767359f1039f4335790d486d43a8ff2c14e2","observation_id":"d793e01b-88b5-42b3-814e-2629165717d8","resolution":{"observed_at":"2026-05-18T10:26:15.402661Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"9574.2021","doi":"10.1109/iedm19574.2021.9720503","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp","venue":"2021 IEEE International Electron Devices Meeting (IEDM)","work_id":"a553c82c-19b9-4c13-b23f-8e7f7b176813","year":2021},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:95725adb6ae14e73a6b93c638be774a3a634fb81043160fa7a2651ab7df3ed9a","observation_id":"522b48a3-7603-4a59-bfaa-303d426af800","resolution":{"observed_at":"2026-05-10T15:00:30.512287Z","resolver_source":"arxiv_id","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"5625.2022","doi":"10.1109/iedm45625.2022.10019391","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Compact Modeling of Emerging IC Devices for Technology -Design Co -development","venue":"2022 International Electron Devices Meeting (IEDM)","work_id":"15107bcd-60cb-4660-9b21-35e4c0c65989","year":2022},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:ed1bb0cd6eb59aebd9f7fa5db75b0418c906203474ce39097aadcb23db0f6a5f","observation_id":"9ff9c213-1ef3-4a61-b961-3fb2b4ac6fdb","resolution":{"observed_at":"2026-05-10T15:00:30.539414Z","resolver_source":"arxiv_id","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"0854.2024","doi":"10.1109/iedm50854.2024.10873330","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Silicon RibbonFET CMOS at 6nm Gate Length","venue":null,"work_id":"ab7f11d2-660e-4fd5-a5d9-9c5734ac113e","year":2024},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:fb799ec1eadf783d99870e1eac1a6f60c4205420d372c79e40b1644d4227e716","observation_id":"aaec893e-cc5e-49d6-a38c-cac13dc831dd","resolution":{"observed_at":"2026-05-10T15:00:30.536382Z","resolver_source":"arxiv_id","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"0854.2024","doi":"10.1109/iedm50854.2024.10873330","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Silicon RibbonFET CMOS at 6nm Gate Length","venue":null,"work_id":"ab7f11d2-660e-4fd5-a5d9-9c5734ac113e","year":2024},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:942509cb0c1d4afaeb5c57f4d5d6b26894b07cbc5f62ec7aad5bcffa48254712","observation_id":"b9dba246-bef5-4315-b49a-cb820bfe70c9","resolution":{"observed_at":"2026-05-10T15:00:30.519634Z","resolver_source":"arxiv_id","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"8228.2024","doi":"10.1109/irps48228.2024.10529432","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI","venue":null,"work_id":"2c1e8bfa-876f-4545-873a-978ad3d574dc","year":2024},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:9ee8f7eba5fc80fbffec1bfa8a99d4f4503e869b650d8eeec141302400830704","observation_id":"1e0a3eb4-2989-461b-8350-6162ff87788f","resolution":{"observed_at":"2026-05-10T15:00:30.530088Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2025.356250","doi":"10.1109/ted.2025.3562509","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs","venue":"IEEE Transactions on Electron Devices","work_id":"20725d0e-ebd1-469c-892c-40b6d4ecf851","year":2025},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:0a74dd01f09b627ef0b3cd4af292bfd00a4f5f1e8bb433a5628fcd7f1fbf2a1c","observation_id":"37f8a26b-a6ec-441d-bf50-ebb16e7b67aa","resolution":{"observed_at":"2026-05-10T15:00:30.541982Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2009.201578","doi":"10.1109/led.2009.2015783","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Low-Frequency Noise in Amorphous Indium–Gallium–Zinc- Oxide Thin-Film Transistors","venue":"IEEE Electron Device Letters","work_id":"c337b509-9713-4620-8e5f-3bb40dee5c80","year":2009},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:84cc13e5b1624f963cb4477d38fcedf79c0c821387b0b226ecb63060d6dc2ac6","observation_id":"5fcf43da-c345-4e46-8258-cfc3355043cc","resolution":{"observed_at":"2026-05-10T15:00:30.522273Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0238211","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs","venue":"Applied Physics Letters","work_id":"8b44bb83-4106-4dcd-9220-8227d83e77c1","year":2025},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:7c383fdad4c1cadea1939e52625123e0899980c594edc5cafae6a39af615da3d","observation_id":"580bfdc6-8cf4-4a71-878f-d1ff98faf9ed","resolution":{"observed_at":"2026-05-10T15:00:30.524072Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2016.259425","doi":"10.1109/led.2016.2594258","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"The Influ- ence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin- Film Transistors With Atomic-Layer Deposition of Al2O3","venue":"IEEE Electron Device Letters","work_id":"d873882a-d7b5-41c1-9f0c-1db27426ae2b","year":2016},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:d094581d31b4e8458df0ac6d6e22d2c9b279d5ab8560b6ebe970fa891790fd35","observation_id":"9427ee82-cb2d-4175-9a79-2e65914b7995","resolution":{"observed_at":"2026-05-10T15:00:30.517000Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/pssa.2211240225","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors","venue":"physica status solidi (a)","work_id":"d20c6779-f187-4731-8c89-f139ddd1364f","year":1991},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:4949f7e6154bf7be48411da0279dec1b63c35158fea3c1493af98a4bda2dbcbf","observation_id":"1d0d12bb-26c9-4653-b4eb-badfdd5c9a14","resolution":{"observed_at":"2026-05-10T15:00:30.543623Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/0038-1101(68)90100-7","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Low frequency noise in MOS transistors—I Theory","venue":"Solid-State Electronics","work_id":"645b0c09-ddbf-4249-bdde-b0c97fd9783f","year":1968},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:728e13010487470a002d55fca473fe72467a21e61e2da0f21b5ab941c39a5a21","observation_id":"dc7048a4-1d22-4e90-b9c3-45c4d30024f6","resolution":{"observed_at":"2026-05-10T15:00:30.531789Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/0038-1101(89)90113-5","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"On the theory of carrier number fluctuations in MOS devices","venue":"Solid-State Electronics","work_id":"0bf15bf8-f422-410a-92a3-070db91d50c1","year":1989},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:abe7dd056af17f52fe6f543d4dc4b93fc7142b8c16bf99f86387c637f7274694","observation_id":"860bae90-d753-426c-b09b-95ebd955ce15","resolution":{"observed_at":"2026-05-10T15:00:30.533651Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/0375-9601(69)90076-0","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"1/ƒ noise is no surface effect","venue":"Physics Letters A","work_id":"310aac91-4663-46fc-b5a7-f896998ff94a","year":1969},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:e1ce1a769da694f2ef0abf9272a62077c8f798e66ef5ba090fd1019a671dcc8b","observation_id":"e0e52d0e-d02f-4ee6-83c3-7c7fb2ac8690","resolution":{"observed_at":"2026-05-10T15:00:30.527479Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-07-12T13:50:20.511791+00:00","source":"crossref_status_cache"},{"observed_at":"2026-07-12T13:50:20.511791+00:00","source":"openalex_status_cache"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1109/16.333809","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"1/f noise in MOS devices, mo- bility or number fluctuations?","venue":"IEEE Transactions on Electron Devices","work_id":"062ac49a-df26-47d1-a9cd-531c14281401","year":1936},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:a7c6b1d7fca112766040f8deead4e175ee6e6d3b47dd4c88418f8fe135859b19","observation_id":"d4443f73-fb6d-408a-8403-60626fc1a2f1","resolution":{"observed_at":"2026-05-10T15:00:30.525880Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2008.200516","doi":"10.1109/ted.2008.2005167","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"What Do We Certainly Know About 1/fNoise in MOSTs?","venue":"IEEE Transactions on Electron Devices","work_id":"28c5000c-a3f4-49a1-be3c-113fc35a5ca4","year":2008},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:a2be10a45b13b2e9323f9585023ba55ab95f0fa331710ac5516f9f3e48ad4fee","observation_id":"c6f78afd-6129-4759-bcb5-f9d2fc6c0d84","resolution":{"observed_at":"2026-05-10T15:00:30.503260Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2015.240585","doi":"10.1109/tns.2015.2405852","metadata_source":"arxiv_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"1/fNoise and Defects in Microelectronic Materials and Devices","venue":"IEEE Transactions on Nuclear Science","work_id":"77f0ea14-a470-4cbd-82e7-48f20f8da74a","year":2015},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:f666c9e83a29c5739b1d7cc8dae96273749dd0e10b4976f66a7e810c81134852","observation_id":"09013c9e-8207-4809-9abc-53b5501cae9c","resolution":{"observed_at":"2026-05-10T15:00:30.491697Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.63.081202","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Coulomb effect on doping in amorphous semiconductors","venue":"Physical review. B, Condensed matter","work_id":"026d718b-acf3-4eae-bcf9-70a087b17190","year":2001},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:d70c0afa809b1c4b2acf67487be50b0da16e0bd1873217b5daf5cc26b1eb95b9","observation_id":"53547f03-4afa-4ee5-bfd1-3b5057ded2ef","resolution":{"observed_at":"2026-05-10T15:00:30.508864Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4994152","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region","venue":"Journal of Applied Physics","work_id":"bb36790d-ecf4-45c5-866f-233500f777cc","year":2017},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:7392fb040df4af90309e215f3e3435e1334123852583f1d6585bb283e63e5712","observation_id":"2bd8a26f-1bce-42aa-97e2-e0bba5eaa7ae","resolution":{"observed_at":"2026-05-10T15:00:30.500491Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-06-05T21:23:00.469572Z","title":"Finite Element Framework for electrostatics and optical simulations in IGZO TFTs - Part 1: Modeling","venue":null,"work_id":"18759fde-7487-440f-b93b-6ef6b7c7cadc","year":2025},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:7afdc9f184d16058e95e00354fd832f5dc7a339e4e26a9c726ef06e9203b162c","observation_id":"6feed2b0-defe-4e88-b137-3c896ad95953","resolution":{"observed_at":"2026-05-18T10:26:15.404972Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.5008521","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Real- and reciprocal-space attributes of band tail states","venue":"AIP Advances","work_id":"1d5ad6db-6fcd-49a4-94f9-8edeb752571a","year":2017},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:ba5777346e34f5fc0a3d3051469009d5ec7e42a535fe47882a8bd4593785dab6","observation_id":"f566d35e-602a-478e-b0bc-d4d6f1db6479","resolution":{"observed_at":"2026-05-10T15:00:30.506874Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1080/14786437008221061","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Conduction in non-crystalline systems V . Conductivity, optical absorption and photoconductivity in amor- phous semiconductors","venue":"Philosophical magazine","work_id":"5fd3045a-6b2c-4618-9bb3-710765449885","year":1970},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:61e723b6ac435a2953ef04626f3c11c0c7932ea717d23adfff971cc6df440688","observation_id":"91c7fb0a-49b0-4d02-ac47-302b577a522c","resolution":{"observed_at":"2026-05-10T15:00:30.498692Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.tsf.2004.11.223","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4","venue":"Thin Solid Films","work_id":"1ccd8305-33be-4f5a-bb81-43356d61d9b8","year":2005},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:adf186ff487bb161e013aee09ce021fa4270f6b0db7aea148b677156ca3fc742","observation_id":"e67ed5dc-8281-4b13-ae77-02cfd5140c44","resolution":{"observed_at":"2026-05-10T15:00:30.505119Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3364131","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors","venue":"Applied Physics Letters","work_id":"b06ea4b7-ab3f-42bc-b74c-8d4b75df5206","year":2010},"citing_paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-05-10T14:59:00.460635Z"},"links":{"citing_paper":"/paper/2604.11149"},"observation_digest":"sha256:70fe27d1cd70ce9be3e8d08d2db112d34df72b05b2ce21cdbc18a550ae86673f","observation_id":"c3b946cc-a123-459e-b9a2-6c1907835b8c","resolution":{"observed_at":"2026-05-10T15:00:30.496685Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2604.11149","last_updated":"2026-04-13T08:11:30Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-07-06T22:59:36.571641Z","submitted_at":"2026-04-13T08:11:30Z","title":"Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements"},"reference_resolution":{"displayed":26,"state_counts":{"malformed_identifier":0,"metadata_mismatch":5,"parse_uncertain":0,"unresolved":0,"verified_exact":19,"verified_fuzzy":2},"total_outbound_references":26},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"thesis":"As of 10 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2604.11149."}