{"as_of":"2026-08-10T16:36:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:4c04d4c5ea6ba62572d6cc630214ac4482a5d323187036b39aecc8ce290d88aa","coverage":[{"denominator":22,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":22,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-04T00:48:46.936506Z","state":"measured"},{"denominator":22,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":22,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-10T06:31:04.303077+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2605.28208/citation-record","integrity":"/paper/2605.28208/integrity","json":"/paper/2605.28208/citation-record.json","paper":"/paper/2605.28208"},"outbound":[{"citation":{"cited_paper":{"arxiv_id":"2605.00544","last_updated":"2026-05-01T09:51:04Z","snapshot_observed_at":"2026-07-06T23:13:57.367556Z","submitted_at":"2026-05-01T09:51:04Z","title":"An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors","version":1},"cited_work":{"arxiv_id":"2605.00544","doi":null,"metadata_source":"pith","pith_arxiv_id":"2605.00544","snapshot_observed_at":"2026-07-04T00:49:17.278120Z","title":"An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors","venue":"cond-mat.mtrl-sci","work_id":"c3a57822-6345-4a90-8735-0f1194e3bc20","year":2026},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"cited_paper":"/paper/2605.00544","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:3ccdcca39a1b3d3f11951565b21a91317c587143d0fef7fd3905c96ef25b3bc8","observation_id":"c7ec470d-3e98-4eb3-8294-d05990b95db2","resolution":{"observed_at":"2026-07-04T00:49:17.298370Z","resolver_source":"local_arxiv","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.086914Z","title":null,"venue":null,"work_id":"fbe1b978-945f-4bbe-9f43-e72290db24bd","year":2017},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:8ea0273d85db021e57556cc3473cbb3a8a38b0307b0aec89e36a724703162613","observation_id":"fc3132f5-c898-48d7-b628-a765a4f37b4d","resolution":{"observed_at":"2026-07-04T23:00:11.201944Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.081149Z","title":null,"venue":null,"work_id":"2709bf93-fac5-4d51-ae29-849d5139fdd3","year":2009},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:61fd9f496f79e357eeba6ba14e793fd37aa2d0af4a898a01a5b5eadb7f170c5f","observation_id":"6d276473-a59f-4f9f-ab6a-ce82dcd897e8","resolution":{"observed_at":"2026-07-04T23:00:11.191695Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.096559Z","title":null,"venue":null,"work_id":"261d70b8-2be0-4cb7-a620-ac566fb3e74d","year":2022},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:9605797fc3b9648f6bb3dbd84cfd9f99d6f8227ed0ef470098b1207ba0bf1364","observation_id":"95d5be41-c901-410d-8044-173e1174d187","resolution":{"observed_at":"2026-07-04T23:00:11.195041Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.090321Z","title":"Saha, Martin M","venue":null,"work_id":"906d8353-8390-4144-bb27-7f01b4caf109","year":2025},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:557709ba299516be4999e6b1e38e8d09432a174c5e871c179fa39a01924f26e3","observation_id":"58b18bbd-f76b-45cb-b9b1-043be8964e0d","resolution":{"observed_at":"2026-07-04T23:00:11.207051Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.094410Z","title":"Polarization switching kinetics in thin ferro- electric HZO films.Nanomaterials, 12(23):4126, 2022","venue":null,"work_id":"1dbf2750-88cc-4d50-b25d-41fc56a12182","year":2022},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:952477ced1a016a0e13801f6607956a374de81456f631071dce3e39928c9960b","observation_id":"2f26c5c5-d70d-4ed0-903d-cecc0b938865","resolution":{"observed_at":"2026-07-04T23:00:11.208828Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.079263Z","title":"CrossSim: An accuracy and performance simulator for analog in-memory computing.https://github.com/sandialabs/cross-sim, 2023","venue":null,"work_id":"0fdcce04-65ae-4c11-ab7b-8bc3190a4e3c","year":2023},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:324d7d5fa8414edb5b9b7c593e159556bd8972c5128a260a703649c4897ac6c7","observation_id":"75612dbc-6668-4d8a-8f65-80d5a3acd856","resolution":{"observed_at":"2026-07-04T23:00:11.213742Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.109485Z","title":"A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference","venue":null,"work_id":"bdbf8257-acca-488c-b8f8-a1cde048f04b","year":2023},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:d32b8e0bb674626716ba065321d1ae5a01ac77ddfe7d4608ccf77d0100fab938","observation_id":"3ceb80ea-e7b9-4bd3-aefd-3826d880e5b3","resolution":{"observed_at":"2026-07-04T23:00:11.208448Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.077322Z","title":"Analog in-memory computing attention mechanism for fast and energy-efficient large language models.Nature Computational Science, September","venue":null,"work_id":"123bdcc7-7b53-4cd2-82dd-85887c95ae2b","year":null},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:f6b9a81ec61374e0e70a0ef2e36422d6628e521376a129dba979a8e4db94e768","observation_id":"ab3238a8-4177-49c2-afd3-e91056d7b203","resolution":{"observed_at":"2026-07-04T23:00:11.203959Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.19315","last_updated":"2024-11-25T12:14:33Z","snapshot_observed_at":"2026-07-06T19:23:50.186410Z","submitted_at":"2024-09-28T11:00:11Z","title":"Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models","version":2},"cited_work":{"arxiv_id":"2409.19315","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2409.19315","snapshot_observed_at":"2026-07-04T00:49:17.270769Z","title":null,"venue":null,"work_id":"690ca976-41be-401e-8832-c20084aaba94","year":null},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"cited_paper":"/paper/2409.19315","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:f109f7a1573aa26191c034df97935c71d94b7a023093251f2fd1be187d88a444","observation_id":"0342b16f-683b-472f-9a7c-06d6b0d94eb8","resolution":{"observed_at":"2026-07-04T00:49:17.275069Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":{"arxiv_id":"2409.00635","last_updated":"2024-09-01T06:59:55Z","snapshot_observed_at":"2026-07-06T19:08:48.648862Z","submitted_at":"2024-09-01T06:59:55Z","title":"Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware","version":1},"cited_work":{"arxiv_id":"2409.00635","doi":null,"metadata_source":"arxiv_reference","pith_arxiv_id":"2409.00635","snapshot_observed_at":"2026-07-04T00:49:17.300943Z","title":null,"venue":null,"work_id":"f5d313db-b5aa-46f4-ac3b-659445efc056","year":2024},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"cited_paper":"/paper/2409.00635","citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:598bcb5bcf1874509be300b6df0c9d08c2c008e5ca545d938eea64758122af83","observation_id":"65f27ff3-50ce-4ae2-8823-d8694960314a","resolution":{"observed_at":"2026-07-04T00:49:17.304271Z","resolver_source":"arxiv_id","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.107860Z","title":"Merity, C","venue":null,"work_id":"7ff6302a-d9b8-4ec1-a17c-8e96acd9172f","year":2017},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:0b4c69b853d94b9c163079b6c1d884af7edbe90ce5ca855fcae1c9164869bc6c","observation_id":"d6d9c84f-cb50-48ad-bffb-7bd281591733","resolution":{"observed_at":"2026-07-04T23:00:11.205425Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.092450Z","title":"Müller, T","venue":null,"work_id":"379ce3d5-bd40-44d8-bc5e-f3f9a8ac861f","year":2012},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:5dde12d48fa4e788d6e30d1f757ea5d1173c44db4087b44c3e11b9357e340747","observation_id":"0e987782-82ac-4380-93f5-a6872c57a883","resolution":{"observed_at":"2026-07-04T23:00:11.191262Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.105949Z","title":"ngspice: open source mixed-mode, mixed-level circuit simulator.https: //ngspice.sourceforge.io/, 2024","venue":null,"work_id":"8e2db260-06d9-4a5d-8a36-431651eea43c","year":2024},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:a73536568e7201f262e112afb7d0c0a5d8f70c524afbb9e6f2a4c77fdd34f49b","observation_id":"e0a556e1-bf90-4cb4-aa71-574ec9127505","resolution":{"observed_at":"2026-07-04T23:00:11.184073Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.111188Z","title":"Salahuddin and S","venue":null,"work_id":"eb21a0f1-0d01-477c-ac2b-eb803db377a5","year":2008},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:5dadf2c1d79aedb9dcc468fe08f2c748f725d8ae2599ef85a13b0b60435badc0","observation_id":"370241ac-1e7a-416d-8d35-ca0bdea56df7","resolution":{"observed_at":"2026-07-04T23:00:11.176375Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.096355Z","title":"Cryogenic characterization of ferroelectric non- volatile capacitors, 2025","venue":null,"work_id":"a5a9ec44-c1ef-430c-9667-0d1fb7cecf9f","year":2025},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:e897cd6f37dec2cf9a721572ff2a5dd7d8e783d98ff7d4bd579fedef55ade468","observation_id":"e2d32bb5-308a-4e36-8f95-1893c234010f","resolution":{"observed_at":"2026-07-04T23:00:11.210970Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.088222Z","title":"Verma et al","venue":null,"work_id":"1fc7edcb-c842-4d67-ba1b-778bed739891","year":2024},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:fa511bb675cce68575a6cf23e3e176bbeebb3f68b604114e8667ed536a201c79","observation_id":"7f3c58b4-ad6d-47d6-b985-5015a7230605","resolution":{"observed_at":"2026-07-04T23:00:11.200176Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.101700Z","title":"In-memory computing: Advances and prospects.IEEE Solid-State Circuits Magazine, 11(3):43–55, 2019","venue":null,"work_id":"f5feec08-796e-409d-a4b0-766c803fdb4e","year":2019},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:03d9cdeb8cf60ffa0035cce95d6a6f0530043be409c8a3bc75ea18d0a4fc67d4","observation_id":"9c46b62c-2b08-4e9f-abca-81905d389cc0","resolution":{"observed_at":"2026-07-04T23:00:11.193991Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.099926Z","title":null,"venue":null,"work_id":"64f733f0-cbdc-4b04-b7ae-39d64bdc910f","year":2025},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:3c9b9b552cfffaa33b68617eab3c33fc65fdddb440ec78d8c1b8bd6c98ecbc7c","observation_id":"00f72057-6d60-4d9f-a971-947d02e2e824","resolution":{"observed_at":"2026-07-04T23:00:11.198588Z","resolver_source":"raw_fallback","status":"unresolved"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.103526Z","title":"UniCAIM: A unified CAM/CIM architecture with static-dynamic KV cache pruning for efficient long-context LLM inference, 2025","venue":null,"work_id":"e7e68946-4e6b-4f71-98ee-30618ca2a5f2","year":2025},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:11c55bbdd97d998489564ab0a72c82febda5011bfe4829aedb1ef7ac37fd55c6","observation_id":"34c43f14-cbbe-4361-a172-bd743de65de8","resolution":{"observed_at":"2026-07-04T23:00:11.186477Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.094621Z","title":"Enabling lower-power charge-domain nonvolatile in-memory computing with ferroelectric FETs, 2021","venue":null,"work_id":"2d28dc6e-8f38-48f4-bb9c-a467ad589a00","year":2021},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:a4cffafaf3bc21712463e5f16c651bf2256b8bef4be1297476e2783ee601180c","observation_id":"ef197f61-092c-4cfe-84ad-c0a1b72e3cc1","resolution":{"observed_at":"2026-07-04T23:00:11.198755Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-07-09T10:16:10.098321Z","title":"firing-rate code","venue":null,"work_id":"889b4be3-3f22-42af-a828-b7f08c726c08","year":2024},"citing_paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors","version":3},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-07-04T00:48:46.936506Z"},"links":{"citing_paper":"/paper/2605.28208"},"observation_digest":"sha256:024dc3f6edfe8bb3acca2a2290e6bacf77fab861fe1999b5bb4bb85ebfed04e8","observation_id":"9e793ea1-463f-49d9-bd70-046fb1447d5e","resolution":{"observed_at":"2026-07-04T23:00:11.203826Z","resolver_source":"raw_fallback","status":"verified_fuzzy"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2605.28208","last_updated":"2026-07-02T13:06:07Z","latest_version":3,"primary_category":"cs.AR","snapshot_observed_at":"2026-08-07T06:35:35.770352Z","submitted_at":"2026-05-27T09:28:40Z","title":"FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors"},"reference_resolution":{"displayed":22,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":4,"verified_exact":3,"verified_fuzzy":15},"total_outbound_references":22},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-10T06:31:04.303077+00:00","source":"crossref"},{"observed_at":"2026-08-10T06:30:57.382061+00:00","source":"retraction_watch"}],"thesis":"As of 10 August 2026, this Paper Citation Record lists 22 of 22 outbound references and 0 inbound Pith citation observations for arXiv:2605.28208."}