{"as_of":"2026-08-05T14:22:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:fb2887d33b9dda73ccf192bfb8a3e0d29eddc56d935e687ac8e0bb2ba65ed364","coverage":[{"denominator":48,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":48,"source":"paper_references, paper_reference_links","source_observed_at":"2026-06-30T03:02:16.317779Z","state":"measured"},{"denominator":48,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":48,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-05T06:32:48.257954+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2606.29219/citation-record","integrity":"/paper/2606.29219/integrity","json":"/paper/2606.29219/citation-record.json","paper":"/paper/2606.29219"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Both models were employed to simulate the switching kinetics of PZO films with varying c- domain fractions (Supplementary Fig","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:4df53153f0af45936d45bb7e0d332dea91ac1d1143baa58210e364b588df985d","observation_id":"660e4b6f-b48e-434f-8647-5928c271b8c2","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Antiferroelectric oxide thin-films: Fundamentals, properties, and applications","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:303bff483a2ede75b3367a3798df971f04e92bc78ee7aeec71af8e6d4daa2598","observation_id":"1afe9ba2-da99-47e4-b0dd-61d0df9d3178","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Enhanced energy storage in antiferroelectrics via antipolar frustration","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:b173996e800e43ad7b92aff524084de4e37969b2a5653278a0b1bfd17e1273ef","observation_id":"722d2257-9086-42a4-bdca-1413c92dafeb","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:a2031ac1c806b61bd9560a15ab18a533f6f399bb151afda154eecb1628158419","observation_id":"1a8c83df-e061-4394-a23c-163009062e6e","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Phonon entropy engineering for caloric cooling","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:6fc00941c49cefb82d74bbbe59fa86fb3d2ad0fbecd04a6176755ea9c4eaf868","observation_id":"02ab0345-1505-479d-996e-3c4c9bdb11f4","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:431598be385985b82a634fc7ebbf0a8b3737e5189fe44d3e5087a28cd23a4972","observation_id":"25c634b3-433a-49a8-8b5c-ba6020e07823","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Observation of negative capacitance in antiferroelectric PbZrO3 Films","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:6ba4765a2aebc1901e69d52c918d8cc442fbbd8c212ce001889af2cc610002aa","observation_id":"5cd5adb3-ac4f-48d8-8ea3-c4baa52252f5","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Four -State Anti-Ferroelectric Random Access Memory","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:2bdfb0fd696d4295fed95b550e5b847af46edcc24d332a4aedb4d901aa38b04e","observation_id":"93007098-48b0-470f-ac03-f3504d62648b","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Zhang KH et al","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:d9cf6f14cce8de5a1aef349c1dd9b8901461c18edd46f50c4784d21c7ca9f154","observation_id":"58157b18-6c41-4d29-a15f-6456c8804ade","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Epitaxial integration of perovskite -based multifunctional oxides on silicon","venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:d7fbe5826af4c28213ff8197e8148b87a2e457b24a4fff169aae26dd5e272ab0","observation_id":"bb17a582-86f3-4c20-bc7c-67069dd83940","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Phase Competition in High -Quality Epitaxial Antiferroelectric PbZrO3 Thin Films","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:28ac912952d2e95da36707d49c536b08cfdf50e90aee90bfeff43d6a61ca03c8","observation_id":"a9ce9fe7-a10c-451b-9c14-924522cb452b","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Clamping enables enhanced electromechanical responses in antiferroelectric thin films","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:b729fcee5a6566e66ec784393625ad913cfcdda3e8e6e09961b7da7e684c7aad","observation_id":"eab40311-bab5-4c8b-8c82-98188ed981cd","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"The effect of dislocations on phase transition in PbZrO 3-based antiferroelectrics","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:94d6c3161f10f8ecd8d6f898f558f4d506903f8279a83922558871ef0f7bbb86","observation_id":"229f31bd-405d-4bea-a4b6-d478d9adc652","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Atomic Insight into the Successive Antiferroelectric– Ferroelectric Phase Transition in Antiferroelectric Oxides","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:66b6e906b6dc83d062d3aebf0ee794ddfa9bc11ad5f9e3a62ee9c13530921352","observation_id":"bc65ec91-4b4b-477e-9664-fdca42151ca5","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations","venue":null,"work_id":null,"year":2008},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:61e40ecc02d43c048e1bca2a231b39a679e7342cd6454f7f76e04cce73716f20","observation_id":"8d82f68d-293a-46db-9537-80d708b597c1","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:bd986b2db742cf0824c24fa6074c8ecf16d0ca6cd122f9459d5875e31af465ee","observation_id":"dacf4b13-a379-4397-9a50-400eacb573ee","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:b91d3fa4791a85945cb153bbf6f107ed404bf6eef8341d42e37022bcc22ea7c2","observation_id":"1e978640-8c5a-465a-8dfb-c248589e46df","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Field-induced heterophase state in PbZrO3 thin films","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:93b9b3d0b9e341a63919c435fe4a04af37103eb5358699816632d40df996be7e","observation_id":"28480440-2df6-4b53-8887-88cdfd1d9bf0","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:43d603ecc3bcef38ef5fb7fd7613218a4ae0a1434ac67e3d209a6c67bc9ccefd","observation_id":"4844b9dc-4da6-47c5-9adf-eec2ad0974e7","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Multilevel polarization switching in ferroelectric thin films","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:ab808396481c06ef76ddec3bebe8428728b043777bcf489dd0242c4ef7103f31","observation_id":"10000d45-2e7d-4e1f-89a6-05c7943e422d","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Thin -film ferroelectric materials and their applications","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:1609d0c4d9a7b25c81b9255a5b970d2a20d917ab874510bbd6298ef8e03b26ea","observation_id":"757a0931-806b-4a5d-b5c5-6c37980eaeb1","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"A Roadmap for Ferroelectric –Antiferroelectric Phase Transition","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:9deaa700ef51e90345f163f79dc47bac6ef98eb5146a7b053ee9b279b1df0182","observation_id":"eb50c640-56e9-4ad2-9e09-2bcb4945254a","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles","venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:ae988f045d9e14c10668c49f0b3026ef1ea507ec9939bf17d76ce82ce3a5d726","observation_id":"3ecb50b3-4b4a-4f8e-821b-fd89871cf7f8","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Finite-temperature properties of the antiferroelectric perovskite PbZrO 3 from a deep-learning interatomic potential","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:0158eebe5066ab5253fe67f9fe62fde47ce4fff4685a77cadf59dd7f3a9cf694","observation_id":"7b34eb97-7df1-4f2f-89ad-efd814ac1d3f","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"On the possibility that PbZrO 3 not be antiferroelectric","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:15595850841e9b6512fc3386e4e04fe2a44794c5f6bdf4396bb1de92ec41f056","observation_id":"3a47469d-469b-42e6-af68-2ecde36bbf86","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:089a2667a9c516ed5a49b4f360a024f753d856d54efcb8c461b39f126adc3513","observation_id":"7f18232c-bb4a-459e-b053-1ddb4cb994ce","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Perovskite ferroelectric tuned by thermal strain","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:a33978e55eb631c0ba71119a73d5ab48398c40190dc7e67974b150b2e4bc3109","observation_id":"793decd5-7e01-4881-aa99-bcfb70d972d7","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Enhancing ferroelectric stability: wide -range of adaptive control in epitaxial HfO2/ZrO2 superlattices","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:bf3fc2011248173e9cd20984128a871f1a630564cbddfee1c483886f063484d3","observation_id":"1c40c166-ea5f-49c9-a946-6053e0331c71","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:077ac7229e8803b9b5f0b5dfc409da371ed655b1060dc0fd5bba2006ae55821d","observation_id":"db2af8c8-61a3-4829-a663-0bfa84d36d11","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":null,"venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:d6f9ed3837655c5bdafa77d1f4b183bb7c986d0cf55a935390a50813b9f7036c","observation_id":"82329164-7b0d-489e-98d8-2ef4e05f5618","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Epitaxial Integration on Si (001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:f757ffc57c4b0d932932a4f55cdd8d596b2f73ec7f04838e26510ffa9ab948c5","observation_id":"cbd990d6-0d7f-4998-ac4e-4939853d6572","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Probing Antiferroelectric-Ferroelectric Phase Transitions in PbZrO 3 Capacitors by Piezoresponse Force Microscopy","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:abcdd7c1f2ea03f5f974e3a884367a80a2e0b4e517b943ac1c363cbe76414e6c","observation_id":"555ac44e-c627-4db2-b145-2fbc01410d89","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Critical field anisotropy in the antiferroelectric switching of PbZrO3 films","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:2232f5951f8513625023ed5e87fa52089135b7814c71b388a5af2c85357c3cf1","observation_id":"9b39df97-891a-4780-af13-5612080ea66a","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":null,"venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:fa912f060f7aba414688caa837596598e666704205daab08ab852a1d01be19a4","observation_id":"a121077d-12d7-4782-8037-50959ed16b44","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Observation of solid -state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:4820998e79e8ddc0825f25f26e626804b50771257beddca2e4fbf612fb542ee9","observation_id":"d4f76731-fe9c-49ab-8214-5cfd157e0d62","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Comparative study of piezoelectric response and energy - storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:fc49b54e421bb06570f4c6a118e6b91f0868844d61d0f84e57fb7abd769701bd","observation_id":"89e0bfd7-f74f-42f0-8db1-567f7494ad6e","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition","venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:d0b474ac6ea240db1c62e10953657a10b602336b3eb9cdc8c59dfe4122ac16e2","observation_id":"ce666522-50df-4a01-9e3c-22e34adfb94d","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:a1195e660836fb9bb3230b631bbda04050df3eae525183270da425a0fd1676f4","observation_id":"e5c72643-30df-4bba-b628-eba1f78e0d40","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Surface plasma treatment boosting antiferroelectricity and energy storage performance of AgNbO3 film","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:664c9f347de832f494ccbd96800fb70da683af8e6cca82a165af5a22f5519147","observation_id":"538978be-e3bd-40e3-b37b-a6fcf5e33518","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Ferroelectricity in Simple Binary ZrO 2 and HfO2","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:1e39baaca93b0a5f0120707de11619c6d1ef6a2a8f25975bfea939d6a8f35c2a","observation_id":"3de0ab7b-bf6c-4e54-ad06-d1155846d5e4","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Ultrahigh electromechanical response from competing ferroic orders","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:77b3948c235004bf516a3c94ec8d3e7ce9e97af3be3824d5893fa5312245055c","observation_id":"1b05955e-cb45-4b90-9ab8-766bd1a83b05","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"The structural phase transitions in lead zirconate in super-high electric fields","venue":null,"work_id":null,"year":1978},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:8113cdacbdc9e0b360bd38ad4743ce0f7f606b17863b70307a8f7d5ece1188a8","observation_id":"2c3c22ea-8865-457c-89ce-b1beab3ae78e","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:1fd941bb6ab63cfbab0296caeb51e3bd227c2132083a926466b81c3073d1c662","observation_id":"82bb2903-f1ef-4501-9264-78445446355a","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Kinetics of phase transformations in real finite systems: Application to switching in ferroelectrics","venue":null,"work_id":null,"year":1998},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:db65ad4b569a97f08560d7123164e9992fa9981516ec7b4afb02b9c6a14cb906","observation_id":"9229b088-10c5-4d27-afae-a55c0e7cee82","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Domain Switching Kinetics in Disordered Ferroelectric Thin Films","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:548bff9f663f885479b38b1883ef8ddc15e21942a3eab9e72bcc67b4fb800aa8","observation_id":"b0345a2a-47dc-432f-a469-c372f8ed58de","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:70a2c1ce8444d519f7a0f8a2f81da29c7f147db80bb70f90c9a318ddd6b5e2bb","observation_id":"9907f757-2d60-48c2-bad6-8d9aba52b521","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"Digital Displacement Transducer Using Antiferroelectrics","venue":null,"work_id":null,"year":1985},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:ae55802dff923903f8b54377ce90c4f1e85b1de3c75ce3d695f5208c66686da8","observation_id":"a9ae98f1-83df-428e-a6da-0b9f96dfccb8","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-06-30T03:02:16.317779Z","title":"ab-” and “c-","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-06-30T03:02:16.317779Z"},"links":{"citing_paper":"/paper/2606.29219"},"observation_digest":"sha256:97fc41344ce0be6d9a6abef0fe6f98a4379819be563c36daeab199e5f40ad990","observation_id":"72054142-154d-49a3-a027-4ed616e77a1d","resolution":{"observed_at":"2026-06-30T03:02:16.317779Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2606.29219","last_updated":"2026-06-28T06:02:39Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-01T16:33:31.237908Z","submitted_at":"2026-06-28T06:02:39Z","title":"Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering"},"reference_resolution":{"displayed":48,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":48,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":48},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-05T06:32:48.257954+00:00","source":"crossref"},{"observed_at":"2026-08-05T06:32:44.755628+00:00","source":"retraction_watch"}],"thesis":"As of 5 August 2026, this Paper Citation Record lists 48 of 48 outbound references and 0 inbound Pith citation observations for arXiv:2606.29219."}