{"as_of":"2026-08-18T08:38:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:826949243adc1d314c8dfd8cba6f2410fc211e4b02b945169899406794f233ba","coverage":[{"denominator":9,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":9,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-12T04:45:16.710568Z","state":"measured"},{"denominator":9,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":9,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-18T06:34:40.430872+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.03121/citation-record","integrity":"/paper/2607.03121/integrity","json":"/paper/2607.03121/citation-record.json","paper":"/paper/2607.03121"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"K.; Novoselov, K","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:7dade5670fd4f05b711cd902fd2a6c1d252747f8720050e720b18b3aa84211cf","observation_id":"0f064dcb-5931-438c-a66d-7e16ed9a33cf","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"Tuning the Electrical Transport Properties of Multilayered Molybdenum Disulfide Nanosheets by Intercalating Phosphorus","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:973a3d5eb9f9f088705b93ca5961452ca5f37bbf4aded9cc4825da6b601e2826","observation_id":"bb924893-eb79-4ad4-900a-713c565d7814","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"A.; Kiemle, J.; Sigger, F.; Klein, J.; Wong, E.; Barnard, E","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:a31596a769abc1bb8a18f69697a58e40fd84478d10a9e5130827c8e3276d3fc0","observation_id":"32f0a415-c352-4787-9d0e-357034cecc8e","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"Z.; Olejnik, J.; Debus, J.; Ho, C","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:b95144945933fb5c189e594bcae62269137bf84b919ed1ffeb6701d40dd1ab39","observation_id":"4e6a9697-75a5-4faa-a305-8fdacdc29a52","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"K.; Alsalman, H.; Azadani, J","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:eecfc32c52e924bb6dbd40e2f1eab56818b7ed9f8495bb9a9a27df3c1eafdaf3","observation_id":"cb948ff7-e08d-4376-9dcb-c36a95f65250","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"2D MoO3-xSx/MoS2 van der Waals Asembly: a Tunable Heterojunction with Attractive Properties for Photocatalysis","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:14cc740bf4a599ac25221728d30432680f2f4be36a013a445b6c7f37a665ee9b","observation_id":"990a25ae-4f80-4aa8-b579-ecc52b5d4b20","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"R.; Larson, D","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:fcd1a71cc6c0950d68a11e31527bfd68d10d8113ff30486da16135b83d3c6ed5","observation_id":"d339abbb-dbc7-4292-bb9f-bae4534145c7","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-12T04:45:16.710568Z","title":"Z.; Iqbal, M","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:c939056b538c318ac20eb20551a11acc81af6e0ad35e3d0827b85f024043adcf","observation_id":"c3064ab6-2c08-4ed1-bc05-84b2de4b1283","resolution":{"observed_at":"2026-07-12T04:45:16.710568Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/d4na00399c","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"First principles study of oxygen vacancy defects in amorphous 25 SiO2, AIP Advances 2017, 7, 015309","venue":"Nanoscale Advances","work_id":"8b45ebd2-c0ea-4cce-8bd6-c1f9b41478b4","year":2017},"citing_paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-07-12T04:45:16.710568Z"},"links":{"citing_paper":"/paper/2607.03121"},"observation_digest":"sha256:76230eda8db2705cfb93d0860dcd99f57a211fa7b2b1768512ff058f336116b7","observation_id":"d2172849-eda1-4020-b757-11a3fae08bc6","resolution":{"observed_at":"2026-07-12T04:48:28.867537Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-18T06:34:40.430872+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-18T06:34:40.430872+00:00","source":"crossref"},{"observed_at":"2026-07-13T21:20:01.704821+00:00","source":"crossref_status_cache"},{"observed_at":"2026-07-13T21:20:01.704821+00:00","source":"openalex_status_cache"},{"observed_at":"2026-08-18T06:34:34.496301+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2607.03121","last_updated":"2026-07-03T09:00:14Z","latest_version":1,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-18T00:08:09.873713Z","submitted_at":"2026-07-03T09:00:14Z","title":"Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2"},"reference_resolution":{"displayed":9,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":8,"verified_exact":1,"verified_fuzzy":0},"total_outbound_references":9},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-18T06:34:40.430872+00:00","source":"crossref"},{"observed_at":"2026-08-18T06:34:34.496301+00:00","source":"retraction_watch"}],"thesis":"As of 18 August 2026, this Paper Citation Record lists 9 of 9 outbound references and 0 inbound Pith citation observations for arXiv:2607.03121."}