{"as_of":"2026-08-16T08:16:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:100f144dabf6d567609ac17fd1d7c915f665f0b3440edc2af01d72a391b0f114","coverage":[{"denominator":7,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":7,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-14T12:11:49.273732Z","state":"measured"},{"denominator":7,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":7,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-16T06:30:59.297886+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.10378/citation-record","integrity":"/paper/2607.10378/integrity","json":"/paper/2607.10378/citation-record.json","paper":"/paper/2607.10378"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"β‐Gallium Oxide Devices: Progress and Outlook,","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:cbd8d2730c46c32955321ff579ffe5e1fdb61f5d846c381388176e6139b4ad91","observation_id":"1fe7721d-d3e6-4e8d-89fe-10f7bf3be6bd","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"Toward emerging gallium oxide semiconductors: A roadmap,","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:58fe6dd1e34486843840ec78c06bcff1f8bda538fc76102623b5f959de8109b7","observation_id":"ddd2488d-1735-48f7-9d07-5dbcafe921a8","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"Ga2O3 Schottky barrier diodes with n -Ga2O3 drift layers grown by HVPE,","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:e24a6a7aa018d0aaba78ed2186f493c335114b547048532cffcccc29b87201b6","observation_id":"fff5b4a8-3fcc-4785-8ad0-ac74fe65b94d","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"Ultra-wide bandgap semiconductor Ga2O3 power diodes,","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:78d9adcaad034a42ea0bbe36cca4884319dfa53dbef60ce186d29b0d0ac5f3ea","observation_id":"bee36bd2-2130-455d-913b-430e4a159284","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy,","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:4a8c0fcc6eb74dacf0972478b139b2d52698d6fe9a9c1e46e3d805b33bc7dbd5","observation_id":"b84816cf-59a6-43ea-9eb5-688fd3ab11c5","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"High -quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant,","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:5747b6264a20acd4883834c98a0787d4c572bd5bcf48ffd123082642abb20e9e","observation_id":"bb590fbf-5395-450b-8ca5-e822fbd26da8","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-14T12:11:49.273732Z","title":"Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model,","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-07-14T12:11:49.273732Z"},"links":{"citing_paper":"/paper/2607.10378"},"observation_digest":"sha256:7b99594b031b263dd388a08615d0a3f0666f1ee173cebe47729507ec8118a0e9","observation_id":"3cff55d5-f68c-4e68-aa56-eb822f99e6d9","resolution":{"observed_at":"2026-07-14T12:11:49.273732Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2607.10378","last_updated":"2026-07-11T16:11:45Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-14T19:33:49.049759Z","submitted_at":"2026-07-11T16:11:45Z","title":"Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin"},"reference_resolution":{"displayed":7,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":7,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":7},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"thesis":"As of 16 August 2026, this Paper Citation Record lists 7 of 7 outbound references and 0 inbound Pith citation observations for arXiv:2607.10378."}