{"as_of":"2026-08-14T01:55:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:f5156ad374cf08b27cf2e9d72b4e1e91e2453019237c30f4c05f54cab664ba03","coverage":[{"denominator":60,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":60,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-02T02:54:05.766356Z","state":"measured"},{"denominator":60,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":60,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-13T06:32:02.005865+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.14083/citation-record","integrity":"/paper/2607.14083/integrity","json":"/paper/2607.14083/citation-record.json","paper":"/paper/2607.14083"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:03.628145Z","title":"S., Chauvin, N","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.628145Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:2659ca28ba984a8f667a6b4e813226d481edb4b866bf1fa921b925ebd18d6b4c","observation_id":"b67ccf6b-c08c-4b69-a11a-19526714b8bd","resolution":{"observed_at":"2026-08-02T02:54:03.628145Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:03.685916Z","title":"& Toth, M","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.685916Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:4c8559ad4b006cfa9abf4aa070c2d87c167bb2643c1eca53f8789d46fbe0f215","observation_id":"5395e457-36a2-448f-836b-aa833b7ef392","resolution":{"observed_at":"2026-08-02T02:54:03.685916Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:03.754242Z","title":"L., Reinhard, F","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.754242Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:54b44f878397c9b54c596492a3685c2df0d93a7ed8e42563b93bf027937986e1","observation_id":"b1557597-8d57-4439-9e01-70ab76a018f7","resolution":{"observed_at":"2026-08-02T02:54:03.754242Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:03.838702Z","title":"URL https://doi.org/10.1038/s42254-023-00558-3","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.838702Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:8471836543aa4c8a653e2f48c716f4389aaf16120a2d708486c30cebbf9742bf","observation_id":"b05d5c3b-3194-42ae-8c2a-b2c094816a74","resolution":{"observed_at":"2026-08-02T02:54:03.838702Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-025-67056-1","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"URL https://doi.org/10.1038/s41467-025-67056-1","venue":"Nature Communications","work_id":"bcdefc44-461a-4da6-a79a-e25a551a3a7f","year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.892925Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:11bf1cdc583605150f2427e35d30748d822beb0378db28c4566ed1a7b58ea425","observation_id":"324ad641-4110-4256-bceb-2db065ddcefe","resolution":{"observed_at":"2026-08-02T02:59:30.259912Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:03.951728Z","title":"& Wrachtrup, J","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:03.951728Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:612e7ab9eca2465f34c4d44e89655dd3a7f8cd66d9e48a337ae363e36a3ffeab","observation_id":"a25f2589-d6e8-46b4-8cc9-be697a746b68","resolution":{"observed_at":"2026-08-02T02:54:03.951728Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:04.019062Z","title":"URL https://doi.org/ 10.1038/nature15759","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.019062Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:cea55467b46ae2392424f8c3739694db41b00e28b2c98cd6a628624676fcea65","observation_id":"e2dab1a2-129e-4f39-8e96-fd9b695474cf","resolution":{"observed_at":"2026-08-02T02:54:04.019062Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2606.23621","last_updated":"2026-06-22T17:18:37Z","snapshot_observed_at":"2026-08-10T01:51:29.516583Z","submitted_at":"2026-06-22T17:18:37Z","title":"Multi-scale reconstruction of single-ion damage tracks in diamond via nitrogen-vacancy centers","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2606.23621","snapshot_observed_at":"2026-08-02T02:54:04.085940Z","title":"G.et al.Multi-scale reconstruction of single-ion damage tracks in dia- mond via nitrogen-vacancy centers (2026)","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.085940Z"},"links":{"cited_paper":"/paper/2606.23621","citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:918e477640918c53218df150a3a00b1b76fcec80fff29dbe0fc05fc931b27967","observation_id":"f67ce623-19ea-475c-976d-51299fd7e126","resolution":{"observed_at":"2026-08-02T02:54:04.085940Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2503.20732","last_updated":"2025-03-26T17:13:30Z","snapshot_observed_at":"2026-08-10T17:36:39.746703Z","submitted_at":"2025-03-26T17:13:30Z","title":"Nuclear recoil detection with color centers in bulk lithium fluoride","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2503.20732","snapshot_observed_at":"2026-08-02T02:54:04.152383Z","title":"A.et al.Nuclear recoil detection with color centers in bulk lithium fluoride (2025)","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.152383Z"},"links":{"cited_paper":"/paper/2503.20732","citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:862e0d92f6f57201ac4ed5587c7de2186d2e62c2a5212a2cf70ba75e15ec3161","observation_id":"4792096f-6c81-4cc2-bece-8d306c144ee4","resolution":{"observed_at":"2026-08-02T02:54:04.152383Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevapplied.20.014058","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review Applied","work_id":"9d2bc385-a175-4518-98c4-ffbeae80be93","year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.194330Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:7628d16f31b574310cf9212347911caed1fae8d9bbdb6ffb6e083304f9a5c651","observation_id":"b5274594-e42f-4ad8-9bd0-56bd4204c87a","resolution":{"observed_at":"2026-08-02T02:59:30.105727Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:04.302976Z","title":"C., Alkauskas, A., Exarhos, A","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.302976Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:55f29bafef982c4e309c500d32929af50a4f7ce79c02423fb226dc22b2d21b5e","observation_id":"d8581190-83da-44d3-a643-26de551a62ce","resolution":{"observed_at":"2026-08-02T02:54:04.302976Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1126/sciadv.adh8617","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Science Advances9, eadh8617 (2023)","venue":"Science Advances","work_id":"a17ff9b9-5f8b-48c0-a5ca-8c1c29be171c","year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.463697Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:75716198360b89404630e8d14ba776e5a62d0a1de82f7a923dc6fdb43435f040","observation_id":"241dc980-4b1b-464e-b211-3f343d1eca02","resolution":{"observed_at":"2026-08-02T02:59:29.775615Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:04.619680Z","title":"& Abrikosov, I","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.619680Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:c41d962471d537d146d45a59ec8acd3d0389f52a3e6665d642c6e4b028cb3c66","observation_id":"665d61f9-819d-4ea3-99ca-859aebfe73ab","resolution":{"observed_at":"2026-08-02T02:54:04.619680Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2303.16283","last_updated":"2023-03-28T19:51:08Z","snapshot_observed_at":"2026-08-13T12:14:32.446138Z","submitted_at":"2023-03-28T19:51:08Z","title":"Database of semiconductor point-defect properties for applications in quantum technologies","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2303.16283","snapshot_observed_at":"2026-08-02T02:54:04.717690Z","title":"URL https://arxiv.org/abs/2303.16283","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.717690Z"},"links":{"cited_paper":"/paper/2303.16283","citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:9de6836e941ff71199c29ad9169544f3e60975c8015356a536d5ae16f18a404b","observation_id":"c43d866e-e6a3-4238-bb1f-a5135392a39d","resolution":{"observed_at":"2026-08-02T02:54:04.717690Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:04.871148Z","title":"URL https://doi.org/10.1021/jacs.4c06613","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:04.871148Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:367363e3fc483a2190ce5880d765a5799bb7583e2fc941b7c68aab3deea6d0f8","observation_id":"a7b2c376-cee0-49f4-b985-7060b7a9659c","resolution":{"observed_at":"2026-08-02T02:54:04.871148Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.039492Z","title":"M.et al.Electrical manipulation of telecom color centers in sili- con.Nature Communications15, 4722 (2024)","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.039492Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:4fec8b0312297d6a9ea9afd84bcd3c915919476b485b9a84c494aaeb3952ba55","observation_id":"20111e97-5388-409d-8182-0968c9875991","resolution":{"observed_at":"2026-08-02T02:54:05.039492Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.202233Z","title":"P., Chroneos, A","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.202233Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:d597006c539e877eb7e4c9ec1b134725745d81ef2d99dfa8d08b2c2b3a61e8f4","observation_id":"684f1d18-b51b-4ae0-bbc6-f443cb384db2","resolution":{"observed_at":"2026-08-02T02:54:05.202233Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-024-46643-8","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"& Chen, S","venue":"Nature Communications","work_id":"25391077-2b1f-4b39-a4ee-c5f8012083cb","year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.324761Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:6581d0e085c47067b0270f18287b50d9e1731311275318f1c1c8a3c8115d865a","observation_id":"c5bbdc69-743f-4aa0-b39d-d7024ccae647","resolution":{"observed_at":"2026-08-02T02:59:29.575416Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.331488Z","title":"URL https://doi.org/10.1038/ s41565-025-02066-0","venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.331488Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:6739d10510e6d8a76fed7396bf5489ee9c7217a9f069c26628033707c54cd1d2","observation_id":"d21dc22a-b89a-49f3-9a16-6bce863332b0","resolution":{"observed_at":"2026-08-02T02:54:05.331488Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevmaterials.6.l053201","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review Materials","work_id":"937af751-4d34-4042-b56b-c1db0073f831","year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.393138Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:0d9b24cfddf6bd2d39332630be9e4febafb60843f44349aa7a8b3dea2c7aa41d","observation_id":"969f62bf-221c-4fb8-9e9a-07434b6097fe","resolution":{"observed_at":"2026-08-02T02:59:29.361679Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41524-022-00957-7","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"& Gali, A","venue":"npj Computational Materials","work_id":"58d6fe4a-7930-4282-bf6b-10f0f822b479","year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.525301Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:16006ce91e6d749ccfa32ec31f62275eb8888d8b5139b9dac05ff223a23736de","observation_id":"a56386eb-8869-4a53-bfaf-84b309d00433","resolution":{"observed_at":"2026-08-02T02:59:29.207859Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.528987Z","title":"Nature Communications15, 4497 (2024)","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.528987Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:e5d8f7fe7a7b36ac76cc0617925dc1ba165c0a20803e49a5850797038d6af02d","observation_id":"1f270866-f9ab-47b9-8ac2-9ca88b76450e","resolution":{"observed_at":"2026-08-02T02:54:05.528987Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.532540Z","title":"URL https://doi.org/10.1038/ s41928-020-00499-0","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.532540Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:c270968ff6b9d3bdbee323987c153373361d1ba68c8f9dce26ce6369ece61c70","observation_id":"18399d2a-19be-4920-b5a5-ec047b5a6112","resolution":{"observed_at":"2026-08-02T02:54:05.532540Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.535693Z","title":"Express31, 8352–8362 (2023)","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.535693Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:83ac2223b8856bbed6a73081aa972a2cea35bee2abd90575d9ab8df0ac13b005","observation_id":"bfb3fd90-a52e-4dd7-8b62-5d5a0e260881","resolution":{"observed_at":"2026-08-02T02:54:05.535693Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1038/s41467-023-38559-6","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"URL https://doi.org/10.1038/s41467-023-38559-6","venue":"Nature Communications","work_id":"4cfdae8b-acd5-4122-ab5c-fe729c2efd9a","year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.539197Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:6b5b9fa323678a1d6daa32f8eeaf01a613802ced1720954ad0d1e8f44f97696e","observation_id":"1691bd8d-8c2a-401f-86e0-2dc441071f70","resolution":{"observed_at":"2026-08-02T02:59:29.109828Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.542775Z","title":"URL https://doi.org/10.1038/ s43246-023-00349-4","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.542775Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:f497a47df1aa5f9fe0a6ad958f1375d79dd764883b6a6c16e95e1abac0c6eeb8","observation_id":"a034fa8b-8b39-4706-a358-611901b33fa4","resolution":{"observed_at":"2026-08-02T02:54:05.542775Z","resolver_source":null,"status":"malformed_identifier"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.600556Z","title":"& Watkins, G","venue":null,"work_id":null,"year":1983},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.600556Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:6dd5c2757e1be689dc0f78d3ec3c9ac7bafa06c95eecaf7a508a7d59b4131ed6","observation_id":"4d39389c-d62e-457e-9901-3d299c6480fe","resolution":{"observed_at":"2026-08-02T02:54:05.600556Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.106.134107","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical review. B./Physical review. B","work_id":"d3291062-2de8-432e-b497-8b0df3123dd9","year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.604128Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:08755a9a72138ef74b373c1b2cf5072e134da08a3fbf71d9030726739d62faab","observation_id":"a274be52-c6b2-46b2-bb14-1e217915c623","resolution":{"observed_at":"2026-08-02T02:59:29.032173Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.631712Z","title":"C., Davies, G","venue":null,"work_id":null,"year":1981},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.631712Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:08ea0b43ac536e0534bb355d33263897df0f6d781d5714a5bc4c6b238eb08344","observation_id":"c1792a09-23d4-4dc8-8fb2-337787f8dfb8","resolution":{"observed_at":"2026-08-02T02:54:05.631712Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.649065Z","title":"& Smith, R","venue":null,"work_id":null,"year":1970},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.649065Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:90e586172fde1b6616f622c5c232cd67c79ed3a4894242cd2c24954d4527443b","observation_id":"705d3d7d-1bb0-422d-8c23-f4f7a6de0a0f","resolution":{"observed_at":"2026-08-02T02:54:05.649065Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.673357Z","title":"& Sauer, R","venue":null,"work_id":null,"year":1981},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.673357Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:023fb6cb4c8a9dcb25405f7dec9c5374f92d33ba4b68485645ac952cbe90c6a3","observation_id":"6e073bb5-d160-4b44-9e9b-ef91a6d4de4d","resolution":{"observed_at":"2026-08-02T02:54:05.673357Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.676888Z","title":"& Gali, A","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.676888Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:dca56bc0167e8f2d13e1f4f0a9cece92c45da718fb69301183e479e0ac27f440","observation_id":"4e58fd6c-e8e1-4287-9ee1-e8def7a6c9b6","resolution":{"observed_at":"2026-08-02T02:54:05.676888Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.680186Z","title":"& Watkins, G","venue":null,"work_id":null,"year":1982},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.680186Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:aadab3cf411b31ca2855c85a9daafacb070c6ab3958c78168b3cfdc5930cfd48","observation_id":"1c809c47-4f60-49d9-b99e-255ebb751351","resolution":{"observed_at":"2026-08-02T02:54:05.680186Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.683432Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.683432Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:1158090b5c8798011b0282c15ce0a8765dbabb69e4634e7d44d03e8992a82518","observation_id":"20db64f6-3475-40a5-8d16-7d018cfec5ed","resolution":{"observed_at":"2026-08-02T02:54:05.683432Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.686900Z","title":"L., Economou, S","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.686900Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:8b7f72ef567e2865c119b3fa3849dc5215288a200126320b6589d8df1dcf7c3b","observation_id":"0fc94e65-7f8d-4beb-9dbb-d58723fc111c","resolution":{"observed_at":"2026-08-02T02:54:05.686900Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.689970Z","title":"& Barcza, G","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.689970Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:2a2420f27ac3f2b2c0e6ac42fae2d0c9a0cc5a7e6979e456c4ff8ed70099ac46","observation_id":"6fff6ae0-ded8-443d-9e17-8e970f3a2586","resolution":{"observed_at":"2026-08-02T02:54:05.689970Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.693106Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.693106Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:c0752c3c9e3e48738a286b438295d18405c6e9ba66fc5548c5ebf1bd2c4d8f47","observation_id":"43496f18-16e8-4268-9df3-348bb2274bc8","resolution":{"observed_at":"2026-08-02T02:54:05.693106Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.nanolett.6c01118","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Y., Tan, L","venue":"Nano Letters","work_id":"5b5ae76f-406f-4538-9db6-950323ad7f9b","year":2026},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.696580Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:acbf525a66ceb494476b148834370504acc67d3ae2760189f34c92fb59188e18","observation_id":"9f53bca8-cdf9-4f09-b5d6-64090c5edfcc","resolution":{"observed_at":"2026-08-02T02:59:28.944500Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.699987Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.699987Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:11b16fa24e310458e0986b13b455aca18351999625fe2682a120fd04c4d9c95f","observation_id":"aff83ce2-aa72-4a54-a131-ad0747c73ad9","resolution":{"observed_at":"2026-08-02T02:54:05.699987Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.703155Z","title":"D.et al.Avogadro: an advanced semantic chemical editor, visualization, and analysis platform.Journal of cheminformatics4, 17 (2012)","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.703155Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:29920c4e17b0a7acb2f46afe5027d15ccb031996c81c05983dd1324f2728c332","observation_id":"9cbf37da-4f64-411e-bbe3-17f1f0cee6fb","resolution":{"observed_at":"2026-08-02T02:54:05.703155Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.706229Z","title":"O., Lindh, R., Malmqvist, P","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.706229Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:9651de72cc96d5036bce79cd214e46cd596aa24afc82993ee92ed8f25527986f","observation_id":"58005065-a008-46f0-a0cb-83b8ab4fadff","resolution":{"observed_at":"2026-08-02T02:54:05.706229Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.709347Z","title":"& Mezey, P","venue":null,"work_id":null,"year":1989},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.709347Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:8b61bc75dd8aee05b03908f71c5e5f056a7e469de0e047d667eeb00666f7b98e","observation_id":"63767e2c-f9cd-4ff6-beca-6936f2913bc9","resolution":{"observed_at":"2026-08-02T02:54:05.709347Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.712728Z","title":"& Jacquemin, D","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.712728Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:5703fa9807d303b0a37ffaa45d7b6a9823580710770f0aabed99096922c0ab72","observation_id":"b5a106cb-fc24-4c57-97aa-785e2cb3d27a","resolution":{"observed_at":"2026-08-02T02:54:05.712728Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.715762Z","title":"Physical Review B110, L020102 (2024)","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.715762Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:3b464d40dd8538a3de365ca879345617673af6b261d9a0e3c0c15d2d0fcfa11c","observation_id":"043a43f7-bffd-46a1-b4d3-1e1a902f2089","resolution":{"observed_at":"2026-08-02T02:54:05.715762Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.719021Z","title":null,"venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.719021Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:8aa654440dfc492450d39e7f64cc1067bd132cc0f5eaba23853cc8be63aa37e6","observation_id":"114084a2-8dc0-4453-8d7c-e1030e62cc20","resolution":{"observed_at":"2026-08-02T02:54:05.719021Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.722092Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.722092Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:1507b75134048d999794d624b55b56438451773136ee41c2e6cd5de93af847d1","observation_id":"e7d5ced5-f9ae-4241-bd03-e4df6d45cc31","resolution":{"observed_at":"2026-08-02T02:54:05.722092Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.725150Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.725150Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:696745e789d2f80bb6f6ccf9407900a213dadc9f335eeaacb00eb58ca0c100af","observation_id":"be7101da-bc70-43e1-8903-62f5b3512063","resolution":{"observed_at":"2026-08-02T02:54:05.725150Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.728414Z","title":"& Wigner, E","venue":null,"work_id":null,"year":1930},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.728414Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:42fbc19a16209c3a2479660d60ff7807e81ea76f1d1dc0de858af9304199d2d8","observation_id":"21bdb274-870d-4780-a92e-343f1f0c80dc","resolution":{"observed_at":"2026-08-02T02:54:05.728414Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.731983Z","title":null,"venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.731983Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:44ec4367461fd80df92e049744eea4410967a103ad08df7cdb05ae1884964991","observation_id":"db5a351e-ba7c-4e2c-bf34-72972624c01e","resolution":{"observed_at":"2026-08-02T02:54:05.731983Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2605.12473","last_updated":"2026-05-12T17:54:06Z","snapshot_observed_at":"2026-08-03T04:55:18.495604Z","submitted_at":"2026-05-12T17:54:06Z","title":"Optical detection of the electron spin resonances of G centers in silicon","version":1},"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":"2605.12473","snapshot_observed_at":"2026-08-02T02:54:05.735086Z","title":null,"venue":null,"work_id":null,"year":2026},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.735086Z"},"links":{"cited_paper":"/paper/2605.12473","citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:e77a5bc29de282790a94bc7ff1610654a7222174d3712c5a66062d8e75015b5a","observation_id":"b9e36830-9150-47aa-aefb-46602795ee8d","resolution":{"observed_at":"2026-08-02T02:54:05.735086Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.738292Z","title":"The orca program system.WIRES Comput","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.738292Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:8c8b44ce30e995eb7629641b30efde5ccf29018792e10522fed5f58b468aa943","observation_id":"80016498-abd3-40df-ad36-9107a34ee69b","resolution":{"observed_at":"2026-08-02T02:54:05.738292Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.741275Z","title":"Software update: the orca program system, version 5.0.WIRES Comput","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.741275Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:e2bd30b6d46393e74e214f153748e42c34445dc0e9b47f220f62659eb5ac38d0","observation_id":"997004e2-9a5e-448b-8036-0dd8bdfc7614","resolution":{"observed_at":"2026-08-02T02:54:05.741275Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.744480Z","title":"A., Harrison, R","venue":null,"work_id":null,"year":2001},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.744480Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:6e08698b8a32000b64f1bb339efe93262cf06561296d826d47302dc2e485d8c4","observation_id":"bdf4209c-42d0-490a-89c4-80ef9be6ed98","resolution":{"observed_at":"2026-08-02T02:54:05.744480Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.747538Z","title":null,"venue":null,"work_id":null,"year":1989},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":55,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.747538Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:5d946387ed102f36e23d32ba77f357a1e3cd97cac4a7802be7719980646e2a87","observation_id":"04652e06-6505-4066-ac1d-c0d5d0c22bb5","resolution":{"observed_at":"2026-08-02T02:54:05.747538Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.750664Z","title":"& Becker, U","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":56,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.750664Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:a081cdea89a82390be14dc166abd757f187ca9e133c350bb93438a9182df6719","observation_id":"30e957a7-d45d-4517-a392-bf6176cfce79","resolution":{"observed_at":"2026-08-02T02:54:05.750664Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.753722Z","title":"Accurate coulomb-fitting basis sets for h to rn.Physical chemistry chemical physics8, 1057–1065 (2006)","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":57,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.753722Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:70d83a57837228c2e96b0790f8283cb158570224211f692c47dd2794e3e9714b","observation_id":"97b95adb-c19a-463a-853b-a31dc6050922","resolution":{"observed_at":"2026-08-02T02:54:05.753722Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.756853Z","title":"& H¨ attig, C","venue":null,"work_id":null,"year":2002},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":58,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.756853Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:53a535871231935da2f4114656b49bcebf0fe06e33d95f60a262045958e3f300","observation_id":"8e5cc852-96bf-4e86-9c41-e84f816c54bd","resolution":{"observed_at":"2026-08-02T02:54:05.756853Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.759956Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":59,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.759956Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:f4ba07a85c01767284668decac584ca7a6472a2dc1ebfa3816a9e02619fce782","observation_id":"ba92818d-5ad7-429a-9553-2a79d792a1c9","resolution":{"observed_at":"2026-08-02T02:54:05.759956Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.763321Z","title":"& Neese, F","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":60,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.763321Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:54fa969bef972946861995b538bb6214851dacc3ff049184462687e9d2a3e7c6","observation_id":"460f435f-0783-49c2-9274-f7cb36ab0b8f","resolution":{"observed_at":"2026-08-02T02:54:05.763321Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-02T02:54:05.766356Z","title":"& Galli, G","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon","version":1},"reference_index":61,"source":"pdf_text","source_observed_at":"2026-08-02T02:54:05.766356Z"},"links":{"citing_paper":"/paper/2607.14083"},"observation_digest":"sha256:a61c90c82813aba27878892c4061a3fc22f3333ef794a8d75e99897f1166df03","observation_id":"c233a2ab-1312-4d03-8303-46a9cb0454e5","resolution":{"observed_at":"2026-08-02T02:54:05.766356Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2607.14083","last_updated":"2026-07-15T17:57:32Z","latest_version":1,"primary_category":"quant-ph","snapshot_observed_at":"2026-08-14T00:13:40.812015Z","submitted_at":"2026-07-15T17:57:32Z","title":"Cluster-configurational study of G-center in Silicon"},"reference_resolution":{"displayed":60,"state_counts":{"malformed_identifier":9,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":42,"verified_exact":9,"verified_fuzzy":0},"total_outbound_references":60},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"thesis":"As of 14 August 2026, this Paper Citation Record lists 60 of 60 outbound references and 0 inbound Pith citation observations for arXiv:2607.14083."}