{"as_of":"2026-08-16T23:52:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:326255c1478354ce1056d448d12dbd37dc33b50ea9377a5103845d76e09a299a","coverage":[{"denominator":48,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":48,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-01T20:53:35.419983Z","state":"measured"},{"denominator":48,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":48,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-16T06:30:59.297886+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.16483/citation-record","integrity":"/paper/2607.16483/integrity","json":"/paper/2607.16483/citation-record.json","paper":"/paper/2607.16483"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.208247Z","title":"The first excited state of the defect is reached by promoting an electron to the unoccupiedA′′ 1 level","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.208247Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:37237d85b67cd8a96a31b16853358555467ea4801209cdf6c06b4c0c57ceb42b","observation_id":"bb0c1ea4-8a43-4350-9e23-e6a4f7b1c567","resolution":{"observed_at":"2026-08-01T20:53:30.208247Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.285388Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.285388Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:94972c6df4f22ab68722c72215dac2215962925779162b21bf8c853e782b5bf7","observation_id":"7b86a1bf-5ed7-401b-be56-c7623fac2e93","resolution":{"observed_at":"2026-08-01T20:53:30.285388Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.343645Z","title":"Montblanch, Matteo Barbone, Igor Aharonovich, Mete Atatüre, and Andrea C","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.343645Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:99d20b903e8eb44683137fbaa9f9cdd6157b4a63c3e6949210abdb2deffbe795","observation_id":"223e1655-a34e-431e-b924-67535329fbb3","resolution":{"observed_at":"2026-08-01T20:53:30.343645Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.415966Z","title":"Spin defects in hbn as promising temperature, pressure and magnetic field quantum sen- sors.Nature Communications, 12(1):4480, Jul 2021","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.415966Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:76bd80742456e562e924f3178cfd44281e7cba6359c6347c90573a6145747be1","observation_id":"277b4a99-51d0-4132-bb67-29a73388bb5f","resolution":{"observed_at":"2026-08-01T20:53:30.415966Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.517150Z","title":"A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields.npj Computational Materials, 9(1):150, Aug 2023","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.517150Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:d6cba08f0a0888a5e60e12bdfdd2fc774a842c74be6ce1ef7a17c61e33e0b190","observation_id":"d98df13e-035e-4ec7-a534-029ddb28a870","resolution":{"observed_at":"2026-08-01T20:53:30.517150Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.597669Z","title":"Martin, Demid Sychev, Alexei S","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.597669Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:920164057aa51485e0168a4547242654b0edf5286e88b634ddaa6be2c6568910","observation_id":"879ddc81-fdb1-4691-ae74-f3f97cc80d6e","resolution":{"observed_at":"2026-08-01T20:53:30.597669Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.757199Z","title":"Nanoindentation for tailored single-photon emitters in hbn: Influence of annealing on defect stability.ACS Nano, 19(41):36302–36312, 2025","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.757199Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:dccb45449e87047a688000f09a1447062b16ac7b3b93fc4e8c8a72cab3d67f91","observation_id":"55dcadac-5f60-46f6-900b-481e67517650","resolution":{"observed_at":"2026-08-01T20:53:30.757199Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:30.857235Z","title":"Deterministic formation of carbon-functionalized quantum emitters in hexagonal boron nitride.Nature Communications, 16(1):11450, Dec 2025","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:30.857235Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:f40cc6d91e683ded3d26db38b740837bfc08cc191286626de156317bf14f23a3","observation_id":"9c614eb1-882c-41ba-b154-b6ffaa49472d","resolution":{"observed_at":"2026-08-01T20:53:30.857235Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.015258Z","title":"Carin Gavin, Hsun-Jen Chuang, Anushka Dasgupta, Moumita Kar, Kathleen M","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.015258Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:f12011b61dacb7a6c0575a6aed4e41518385af446ea24c64c72694665903266a","observation_id":"7110e86f-84c4-42ee-99e6-411d0ea7ffb1","resolution":{"observed_at":"2026-08-01T20:53:31.015258Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.178791Z","title":"Defect engineering of two- dimensional transition metal dichalcogenides.2D Ma- terials, 3(2):022002, apr 2016","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.178791Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:3f6308734825a775c1afb17d63701a20e1ed8ea5bc06bbc21d638258f0c6ae34","observation_id":"8c8a4dce-4b8b-4ab2-821d-e51737003c3c","resolution":{"observed_at":"2026-08-01T20:53:31.178791Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.354605Z","title":"Fu, and Kyeong- jae Cho","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.354605Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:b2b28fb387fff0f58bd7f132de1604a4625ce0e4bfe29ed638dcf9d7dce029dc","observation_id":"a0ca6cb9-d161-4327-96b4-1379e6d20da6","resolution":{"observed_at":"2026-08-01T20:53:31.354605Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.501517Z","title":"Ford, Milos Toth, and Igor Aharonovich","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.501517Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:1a3b7593f055b111c6f25f1e033f9400932d8f1865098d5c591dc886e6a9d36e","observation_id":"9a61b548-a8c1-4b28-944c-521c6bbc9bbd","resolution":{"observed_at":"2026-08-01T20:53:31.501517Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.586607Z","title":"Single photon sources in atomically thin materials.Annual Review of Physical Chemistry, 70(Volume 70, 2019):123–142, 2019","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.586607Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:13b2453a78cec5ce5437c10e9af84ffa923b799293b245b520a23e5ef07d7601","observation_id":"e030572c-99dc-466d-8b8a-f3c9e9034747","resolution":{"observed_at":"2026-08-01T20:53:31.586607Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.781467Z","title":"Durand, T","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.781467Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:5967fb2b2d5cacf193a151097ae6509426ecdc6a004e29ba5a98e9272f31c8dd","observation_id":"99227959-df31-40fd-9334-fc22c54d7e34","resolution":{"observed_at":"2026-08-01T20:53:31.781467Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:31.925854Z","title":null,"venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:31.925854Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:e27563db2fd18c23afc70c9167e0d141d19ff0dab83bbe1eea922681c6e4c3f7","observation_id":"d2b394de-360b-42fa-9198-77ee1cfa34af","resolution":{"observed_at":"2026-08-01T20:53:31.925854Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.085415Z","title":"Controlled fabrication of freestanding monolayer sic by electron irradiation.Chinese Physics B, 33(8):086802, aug 2024","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.085415Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:0b86649574bf9209092c76b411be7c14906e9a67f0786f814edfbb9a53101406","observation_id":"4d21232e-e6fc-4686-b1ea-07fa0daeebe0","resolution":{"observed_at":"2026-08-01T20:53:32.085415Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.214337Z","title":"Bekaroglu, M","venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.214337Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:cfe01211c24ddcc4656604b5e165ce7a5cff245802123a5b3e06fdaf10ca0c9a","observation_id":"add5d3e0-7dc1-43de-8d4e-a46a9512907b","resolution":{"observed_at":"2026-08-01T20:53:32.214337Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.347721Z","title":"Yakobson","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.347721Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:ca7c1a127859c67a259972ad6f80082f11bce898e144a78d90187edeb70eb795","observation_id":"08d4fec4-6e49-4944-9177-8f26d8752f86","resolution":{"observed_at":"2026-08-01T20:53:32.347721Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.534646Z","title":"Two-dimensional sil- icon carbide: Emerging direct band gap semiconductor","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.534646Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:69f0869b4371cad944a017354096b460399b727f9271d97220a06db012fc4564","observation_id":"648d0215-3960-4161-b50f-0fd0a3631daf","resolution":{"observed_at":"2026-08-01T20:53:32.534646Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.641396Z","title":"Neutral vacancy-defect-induced magnetism in sic mono- layer.Physica E: Low-dimensional Systems and Nanos- tructures, 42(9):2451–2454, 2010","venue":null,"work_id":null,"year":2010},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.641396Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:9b692cc0cb7b79ba746719356fdc22e4b92eae883637dfe6577f3efbcefa87a8","observation_id":"9393350f-f76e-4ae0-b044-bd343b980f9b","resolution":{"observed_at":"2026-08-01T20:53:32.641396Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.736341Z","title":null,"venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.736341Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:4e6137b95582ccac196be299f60a3a95aefe12906cdc4dea123d36441584ba7c","observation_id":"5520e651-3b1f-420e-a3ed-e4342a919a36","resolution":{"observed_at":"2026-08-01T20:53:32.736341Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.834419Z","title":"Hassanzada, I","venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.834419Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:a920a29801e8ca7b5707c3b463f1492a11bf43822361f5a68abe6a1508038a6a","observation_id":"1ed0d39c-628b-4694-8217-3582276218cd","resolution":{"observed_at":"2026-08-01T20:53:32.834419Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:32.958477Z","title":"Mahendiran and P","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:32.958477Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:8d2d5802f0842ba8b23048aeb289b1d2ffc64b98f945779ac2217274095f48d7","observation_id":"88b1d8ac-8d7b-4366-8656-27112bfd6160","resolution":{"observed_at":"2026-08-01T20:53:32.958477Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.099706Z","title":"The structural, mechanical and electrical properties of 2d sic with c-related point defects and substitution of c by foreign atoms.Vacuum, 208:111700, 2023","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.099706Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:a80b703cfe2a22d9fe44d79c6af258706c38b9eee5dc848fabff1aaa982fbd57","observation_id":"9f52b9d2-d22c-4864-b959-b6fb8b10729f","resolution":{"observed_at":"2026-08-01T20:53:33.099706Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.296431Z","title":"Defect-driven tunable electronic and optical proper- ties of two-dimensional silicon carbide.Phys","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.296431Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:7cbbe0b1d138aa018ed561c1a726ead8f5c8b02cd38da75aa3c064e9298eee55","observation_id":"2052a3d6-95fb-4d97-abe2-8dced1595265","resolution":{"observed_at":"2026-08-01T20:53:33.296431Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.451030Z","title":null,"venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.451030Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:322d9b3cc8299b39f29b2e0ec0545365f3b7724ff3973b328e4b82120b108f05","observation_id":"5adde94c-b55c-4fc7-9739-0c049d6df955","resolution":{"observed_at":"2026-08-01T20:53:33.451030Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.638892Z","title":"Mohseni, I","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.638892Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:acb448b3fa3b8936ecff16ced02a778eaa44bfbec2d8c331d292b6bf074d5af9","observation_id":"ba74e2ee-10fb-4733-9266-9f7f797421da","resolution":{"observed_at":"2026-08-01T20:53:33.638892Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.786419Z","title":"First-principles investigation of point defects in two-dimensional sic as single-photon sources.Phys","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.786419Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:590bdf7c64ae9f607a8f9054a4d06f377946a575d359acc741d57c7a8e3f612c","observation_id":"55631e8a-66f0-4802-92c5-2a600b89ce9d","resolution":{"observed_at":"2026-08-01T20:53:33.786419Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:33.924217Z","title":"Mahfuzul Haque and Sajid Muhaimin Choudhury","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:33.924217Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:8e39043502b914100962f0008cd1e7b7c4ba2c133052395539b61dcc52c38d4c","observation_id":"4ae4b7cb-ead6-4bca-b18f-e30446967b94","resolution":{"observed_at":"2026-08-01T20:53:33.924217Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.005064Z","title":"Kresse and J","venue":null,"work_id":null,"year":1993},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.005064Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:23b3ddabb7546cc831525602a7dec21c5c38fdd5d085a1e3f11bf0707fda0765","observation_id":"58f2d9aa-689b-498d-abed-757e68fdb37e","resolution":{"observed_at":"2026-08-01T20:53:34.005064Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.083273Z","title":"Kresse and J","venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.083273Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:2824083b5a38ae2b8fcc5d8f206073e4e2693b9cd487f09b1710b0b02dde161d","observation_id":"f0aecf69-6e9b-4e22-9313-90db4bda79e7","resolution":{"observed_at":"2026-08-01T20:53:34.083273Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.158219Z","title":"Kresse and J","venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.158219Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:fbb6007f9a37aaa0dea98683d4a7a62427c66c6eec663c1e6722298771fed943","observation_id":"cc0086bc-e8ed-4f20-ab01-e0a2bd14fc68","resolution":{"observed_at":"2026-08-01T20:53:34.158219Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.227844Z","title":"Paier, M","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.227844Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:cf82ec4109468163335ad60c0357d42308dbcede2a3a1ac08283721cde18f700","observation_id":"e87d1e49-57cd-4d8b-91ee-76a7f269418b","resolution":{"observed_at":"2026-08-01T20:53:34.227844Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.300164Z","title":null,"venue":null,"work_id":null,"year":1994},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.300164Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:e2b015eac434b7b99bbf2200f782058d49e5e9f36f74e70c684cfc56ff29d3f2","observation_id":"9849ec99-7590-4fdc-9647-e1cf85cb4260","resolution":{"observed_at":"2026-08-01T20:53:34.300164Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.388147Z","title":"Kresse and D","venue":null,"work_id":null,"year":1999},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.388147Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:fb4bdf58dc5dee40c502bc75722174ac1217dbfda93aa39aa5ec4534133530f4","observation_id":"c9001a7f-6180-4beb-b67a-020c1163f035","resolution":{"observed_at":"2026-08-01T20:53:34.388147Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.487133Z","title":"Johnson, and Graeme Henkelman","venue":null,"work_id":null,"year":2012},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.487133Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:bbcf03ea48a3dd4feda2672c2a9c37993e08276b3e08d3552cc8531771e4021c","observation_id":"a6c4fa9a-dfeb-4f0c-8b4d-2fd8ac047ee0","resolution":{"observed_at":"2026-08-01T20:53:34.487133Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.561953Z","title":"Uberuaga, and Hannes Jóns- son","venue":null,"work_id":null,"year":2000},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.561953Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:110fac20a21845e08d0fba2329298d7e940e54285449f06a450bb5d4b99599f7","observation_id":"9e5af195-7714-48b7-8672-a367a90e3028","resolution":{"observed_at":"2026-08-01T20:53:34.561953Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.622100Z","title":"Perdew, Kieron Burke, and Matthias Ernzerhof","venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.622100Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:9e6e755b75fceb99e45914497ccb7c5e1625edd7c729fc73d1efdce34093d7c1","observation_id":"941ce144-336d-40d6-84fa-b3d910b2a3c7","resolution":{"observed_at":"2026-08-01T20:53:34.622100Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.708407Z","title":"Krukau, Oleg A","venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.708407Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:a7dadd9668a7d995af4c2cfcc8f21850b3bf5dac8eaea5a3b2f861f7fd9a6432","observation_id":"dc19f785-6df1-4979-bd7d-6aa68a3d6a01","resolution":{"observed_at":"2026-08-01T20:53:34.708407Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.785749Z","title":null,"venue":null,"work_id":null,"year":1993},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.785749Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:cb07ba1895f0df9de4bdb98efa710c9552c04c8b686e0cd6d8a280553669371c","observation_id":"4c8eb9c3-b6f4-4c28-b814-09077269b4bf","resolution":{"observed_at":"2026-08-01T20:53:34.785749Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.907515Z","title":"Deringer, Geoffroy Hautier, and Richard Dronskowski","venue":null,"work_id":null,"year":1931},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.907515Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:d9464fd054118d9d9104a7fea1323ce53c17309c9511bcb757bc5c2e1cc95979","observation_id":"37fae051-61cc-4fb8-8e69-26075b5b60af","resolution":{"observed_at":"2026-08-01T20:53:34.907515Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:34.957276Z","title":"Deringer, Andrei L","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:34.957276Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:719a61745630c82a1517e38f3e908e9f091bc65a9c3bf4c1c24e6961c54e7170","observation_id":"0416b86f-0f83-4cec-9a27-b07dbda8d941","resolution":{"observed_at":"2026-08-01T20:53:34.957276Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.013195Z","title":"Van de Walle","venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.013195Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:b47298c7eef156b9621f61cfb8b18258249d53a77e5b825246f28eb130fad36d","observation_id":"912e512e-3cd8-4ffd-a4c4-1dfcd6bf7def","resolution":{"observed_at":"2026-08-01T20:53:35.013195Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.110772Z","title":"First- principles calculations for charged defects at surfaces, in- terfaces, and two-dimensional materials in the presence of electric fields.Phys","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.110772Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:aeb3f2cd53e51e2d7bdda4b13fcd1d46a20206db595666d32659bd2ae36acdf6","observation_id":"2c7ad6e7-89cf-45b1-858b-1ebbf2f4746d","resolution":{"observed_at":"2026-08-01T20:53:35.110772Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.200318Z","title":null,"venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.200318Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:bc27c44d7dfbebb4b6700c78cf654bf0fc3c3566d76c9372ca58c1c6daf77201","observation_id":"873102af-d79a-4efe-97ce-002ab23ce342","resolution":{"observed_at":"2026-08-01T20:53:35.200318Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.286157Z","title":"Vasp band unfolding.https://github","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.286157Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:74f9bfc65c6f5af88d608f6b865eda67c35c07630ed2b8702a117a68a9ec8f37","observation_id":"96c12028-c2ea-4e20-92f9-20a3ffc3566a","resolution":{"observed_at":"2026-08-01T20:53:35.286157Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.351077Z","title":null,"venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.351077Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:dc7685a410030841d3fdd941f58f1dc5a118fc14645ef9f72e13c8e3503a321a","observation_id":"6e2abbd2-c7e4-4480-b3ef-3a65ba396380","resolution":{"observed_at":"2026-08-01T20:53:35.351077Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T20:53:35.419983Z","title":"Silvi and A","venue":null,"work_id":null,"year":1994},"citing_paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-01T20:53:35.419983Z"},"links":{"citing_paper":"/paper/2607.16483"},"observation_digest":"sha256:5873ffe6632f35581d9528aeb79178ae5c315e5a48f7e62a9d1bd32b3d9d9389","observation_id":"21267688-4601-47ad-8c75-bc74becdab1a","resolution":{"observed_at":"2026-08-01T20:53:35.419983Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2607.16483","last_updated":"2026-07-17T19:57:00Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-01T20:53:29.704547Z","submitted_at":"2026-07-17T19:57:00Z","title":"Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles"},"reference_resolution":{"displayed":48,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":48,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":48},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-16T06:30:59.297886+00:00","source":"crossref"},{"observed_at":"2026-08-16T06:30:54.164669+00:00","source":"retraction_watch"}],"thesis":"As of 16 August 2026, this Paper Citation Record lists 48 of 48 outbound references and 0 inbound Pith citation observations for arXiv:2607.16483."}