{"as_of":"2026-08-07T06:57:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:97732bd27597c5e350dfdeba6ccb76188d935bdc55804745c0238fe8dcba4773","coverage":[{"denominator":54,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":54,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-01T13:40:46.815663Z","state":"measured"},{"denominator":54,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":54,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-07T06:34:17.273281+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.19051/citation-record","integrity":"/paper/2607.19051/integrity","json":"/paper/2607.19051/citation-record.json","paper":"/paper/2607.19051"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:42.661209Z","title":null,"venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:42.661209Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:1fa690a3359a18c57297dace304aeb5ee62b118652ee14dad1fe6a863d311a64","observation_id":"24d53fb2-7f53-4802-afdf-e82a6c4053be","resolution":{"observed_at":"2026-08-01T13:40:42.661209Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:42.717790Z","title":null,"venue":null,"work_id":null,"year":2006},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:42.717790Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:da27135974c614546684e3cfd38f6cd7c1ce0f703c341b3f3fbc8ca16e2c5141","observation_id":"28bbc0b0-309d-4889-a732-a84df91b6114","resolution":{"observed_at":"2026-08-01T13:40:42.717790Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:42.807693Z","title":"König, S","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:42.807693Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:0765ee17bc9bf473a4371f0f10349bdb50b8b17ba66c148d09a537ae8d0f4ae8","observation_id":"9af4f365-4171-4d9d-8b50-e732938abfa6","resolution":{"observed_at":"2026-08-01T13:40:42.807693Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:42.900591Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:42.900591Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:5a6fefd9522ded42317b95b4ab1f94d4edf5e9f91abc1d66772c60227f51b48a","observation_id":"d4379997-2bec-4225-9157-f0a71b039562","resolution":{"observed_at":"2026-08-01T13:40:42.900591Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.010435Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.010435Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:d138601773933587dc1f39a97ef92f40f5de4bcd3d7edf1a7388db03398fdb4c","observation_id":"afe1ce6a-ab31-4c4c-916f-56fe2429af5d","resolution":{"observed_at":"2026-08-01T13:40:43.010435Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.078444Z","title":"Hatsuda, H","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":6,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.078444Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:7b112108c6b6d34ef37f6f54547f8ed90b3283898404dfea58eac0d35aacb3f8","observation_id":"4cd6bf56-b8e7-4d3a-90e6-001833b39684","resolution":{"observed_at":"2026-08-01T13:40:43.078444Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.156983Z","title":null,"venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":7,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.156983Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:96f9c3523f8d041b77f6a9eda981973be66b376ce6c5917a2c569704026684ff","observation_id":"32c7d060-54a8-4a95-b765-8622dce6d826","resolution":{"observed_at":"2026-08-01T13:40:43.156983Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.221267Z","title":null,"venue":null,"work_id":null,"year":2008},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.221267Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:ee54e367e1642481f8d0474dd88daeb1bd3bea2d7935fd555fb18ed66e65ed37","observation_id":"0542c740-7fe2-4f16-9bac-4d9978a1888c","resolution":{"observed_at":"2026-08-01T13:40:43.221267Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.314139Z","title":"Riney et al., Interface Dependent Coexistence of Two-Dimensional Electron and Hole Gases in Mn-doped InAs/GaSb, Adv","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.314139Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:3d2e93a3b4d30587dbb4fa75dd9834ee8cb9bb3f2ae836629fefe29aa6001945","observation_id":"3fdce4aa-75e2-428b-8149-ea82092cbba0","resolution":{"observed_at":"2026-08-01T13:40:43.314139Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.389745Z","title":"Riney et al., Fermi level tuning and band alignment in Mn-doped InAs/GaSb, Phys","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.389745Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:2b13ce40a21be19cfac4891de7a494933cb9ad14e8e37d747911307d341392d3","observation_id":"6fe9c5ed-c9ea-4a2d-b533-3e746a3454a6","resolution":{"observed_at":"2026-08-01T13:40:43.389745Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.472700Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.472700Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:0319454420acddcf4768e249bdf8bd8536a9757482740c96151a9a57855a2f46","observation_id":"d0f00afc-3a28-42b6-88d6-0103aa66f675","resolution":{"observed_at":"2026-08-01T13:40:43.472700Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.569436Z","title":"Schmid, M","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.569436Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:4122c3ae0ef1952ccfb6b5533fcf8e3509de103837bc6463cebcc65f3480e5f4","observation_id":"7fad6ddb-3a99-4742-b8d3-30466283f0cc","resolution":{"observed_at":"2026-08-01T13:40:43.569436Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.662102Z","title":"Qu et al., Electric and Magnetic Tuning between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells, Phys","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":13,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.662102Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:83d5f99d9bbcfe86f962f8a1f3d19078861c200aa921047dc5da1c2b5fb33c7c","observation_id":"6cbfff98-ee10-44f0-bea4-824bea7f8f73","resolution":{"observed_at":"2026-08-01T13:40:43.662102Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.775744Z","title":null,"venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":14,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.775744Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:ecac599c08de19704e22ccadfdc5c05fd54bf2fe264a21ab1e6bd0dc85f1cfa6","observation_id":"6656d880-d6f6-4702-ba97-9754bfe7ce08","resolution":{"observed_at":"2026-08-01T13:40:43.775744Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.902377Z","title":null,"venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":15,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.902377Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:54d9beb8e9daf6f2cfa11b9ab003aaeeb89a1183d37c060a60b6ef1b350e652c","observation_id":"3c4bf8b3-dff4-4e78-bba1-6b029a87a6c6","resolution":{"observed_at":"2026-08-01T13:40:43.902377Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:43.992029Z","title":"Knebl, P","venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":16,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:43.992029Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:af450b983f7ec24c2a6ccb6ac295c6b0c0c12185bfb0d741df7f6c7a17913f69","observation_id":"48bfb4c7-12b4-4ae7-9539-63200c89d499","resolution":{"observed_at":"2026-08-01T13:40:43.992029Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.081014Z","title":"Meyer, T","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":17,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.081014Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:cf94ae9657768e022e340bf5ce851557addd5ea12f00016833fdfb99ba0591d3","observation_id":"f9dfc6b6-d347-4b75-aefb-ccbc2f9a1eb9","resolution":{"observed_at":"2026-08-01T13:40:44.081014Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.175784Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":18,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.175784Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:c5ca7825c0749d92da501ce41b38882244f9d76db2ab51793e6d669549215006","observation_id":"8cc0e12f-a56c-4cfc-a86a-270f4c8f6cb1","resolution":{"observed_at":"2026-08-01T13:40:44.175784Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.264500Z","title":"Meyer, S","venue":null,"work_id":null,"year":2021},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":19,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.264500Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:ac7f079829926d67a14a79383f001b6d800cd94049c6e9da1f99026e9c473f53","observation_id":"b71a69db-c6fa-4377-944f-0dc3b8b04aae","resolution":{"observed_at":"2026-08-01T13:40:44.264500Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.344982Z","title":"Meyer et al., Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics, Sci","venue":null,"work_id":null,"year":2025},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":20,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.344982Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:a9371fe0ef6af51595eaf8b83e6214c0d3cc0a63cddb14ca291491f575b9a063","observation_id":"d0d40610-a360-4f1e-81d0-6b78d4d4d9dc","resolution":{"observed_at":"2026-08-01T13:40:44.344982Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.409172Z","title":null,"venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":21,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.409172Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:5bf345bdd202ceb998ecafc3238e308c0b9eaef14f191b6d87d513da3b344f96","observation_id":"ef9bfe0a-36e1-4695-ae6a-b7794af83107","resolution":{"observed_at":"2026-08-01T13:40:44.409172Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.497357Z","title":"Schäfer, J","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":22,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.497357Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:26dabf2c0681f2ac38c3e4e84add712dc3a4df0c96b97028722dcb2f949b7f81","observation_id":"3c5a079e-11b7-4f57-96b5-6956a90fe5ad","resolution":{"observed_at":"2026-08-01T13:40:44.497357Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.573390Z","title":"Bader, F","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":23,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.573390Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:171d689b6db23e6452793ec2a953cf53f5f199e49f71525199bb41eb4bc6cdef","observation_id":"9319533f-4770-4403-ad0c-2dbc9347090c","resolution":{"observed_at":"2026-08-01T13:40:44.573390Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.638708Z","title":"Tournié, L","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":24,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.638708Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:09f5d9cddcdc8970ebb7c8ba58b521144abaa24343b94cf9172cfe3fc6fa08ad","observation_id":"9a47250c-9a17-44ac-87f2-78fa55a26a41","resolution":{"observed_at":"2026-08-01T13:40:44.638708Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.720065Z","title":"Mueller, A","venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":25,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.720065Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:47cf9439c5de906b3e48e271dd458861a1c0560ac9d9c1cb7b31c1e84caacd1d","observation_id":"08cfd9c2-796a-4f68-b175-cbf7cb47e22c","resolution":{"observed_at":"2026-08-01T13:40:44.720065Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.790133Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":26,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.790133Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:a1009a09c87d31d66117c824569d729b3956616408c765f531ee2e45e009612b","observation_id":"dcd5e829-fcca-487f-8ffa-87a51c3b7b5c","resolution":{"observed_at":"2026-08-01T13:40:44.790133Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.835932Z","title":"Nichele et al., Edge transport in the trivial phase of InAs/GaSb, New J","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":27,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.835932Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:53097c74affe3e6d8454a75cd2b170f978892641a21612302346e5ef52e7df70","observation_id":"3e35e0cd-7aaf-43fd-a9f5-e5d60479ef26","resolution":{"observed_at":"2026-08-01T13:40:44.835932Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.914920Z","title":"Mueller, C","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":28,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.914920Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:3cdf1e838d975d6a563dd21dedcac6daf42780d2cf70231a4cda31069fd3306c","observation_id":"fc08691e-7676-4376-bea4-c30845d85494","resolution":{"observed_at":"2026-08-01T13:40:44.914920Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:44.977096Z","title":"Chandola, R","venue":null,"work_id":null,"year":2005},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":29,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:44.977096Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:2c55c145ca544d6cb2db30c9f522762b99142b2f9a18a441ab2fc3e4d806282d","observation_id":"28931b3e-90a0-47f7-af5b-c88d72225794","resolution":{"observed_at":"2026-08-01T13:40:44.977096Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.064561Z","title":"Segercrantz, J","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":30,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.064561Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:1e5712c10fcc337e402f692f51172446bd066fd6370ea0379a7c8f86dc0b0857","observation_id":"0d4320c4-3a92-4c92-a232-263c5659334b","resolution":{"observed_at":"2026-08-01T13:40:45.064561Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.150255Z","title":"Buckeridge, T","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":31,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.150255Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:7a77b5a3d81d6aec1a332d4e1b1d4e21573e9a311ef7ad9385790a42eba3ebc6","observation_id":"e8b8d5c6-afb6-4bf2-add4-2721aa5f3915","resolution":{"observed_at":"2026-08-01T13:40:45.150255Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.235709Z","title":null,"venue":null,"work_id":null,"year":1963},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":32,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.235709Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:95edb0ab24a8a280731ef54b6522bca5edc3f51a532119c22605be0f71f648bd","observation_id":"305a2379-ee3b-4cce-8556-2bc1591fce17","resolution":{"observed_at":"2026-08-01T13:40:45.235709Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.305124Z","title":null,"venue":null,"work_id":null,"year":1970},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":33,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.305124Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:1395fc7bbb8d85ba29a19df83c9347fc2b9af777eb6c357fef3f620a75fba6c8","observation_id":"0c5e7b03-1e26-4918-84c4-484971d91436","resolution":{"observed_at":"2026-08-01T13:40:45.305124Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.372664Z","title":"Noguchi, K","venue":null,"work_id":null,"year":1991},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":34,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.372664Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:33a7f2074ed1362a8163de7749aa0f49862e3b60611ac597ae4865d7fa9415de","observation_id":"d297d3b3-613a-4122-b1e3-a4217e3bdb2b","resolution":{"observed_at":"2026-08-01T13:40:45.372664Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.444260Z","title":"Olsson, C","venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":35,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.444260Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:dbebb05e58d545e899dba3515a0244b6469dc4de2403efa6b6b12e035c34e86a","observation_id":"83229c60-2c68-4844-a02b-13913bc49ca5","resolution":{"observed_at":"2026-08-01T13:40:45.444260Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.501842Z","title":"Bhargava, H","venue":null,"work_id":null,"year":1997},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":36,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.501842Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:9514790eb1a02a085d13f0ea468a67dbe3faf1390db514282b8fbb3293ca6d50","observation_id":"876ffb5d-f17d-46c0-b574-d3b97a2e44c1","resolution":{"observed_at":"2026-08-01T13:40:45.501842Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.561519Z","title":null,"venue":null,"work_id":null,"year":2015},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":37,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.561519Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:e77e6759ec5726d93b25fa928cfff7481a3e46f9369c47c0b96d04915bc129dd","observation_id":"42da6c38-632b-48fa-b556-88516379703d","resolution":{"observed_at":"2026-08-01T13:40:45.561519Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.628829Z","title":null,"venue":null,"work_id":null,"year":2020},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":38,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.628829Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:47a11d24912970382112b90b7349f14509c3988a6152d29328e9e36f0f34bc20","observation_id":"b6166312-98a9-43ee-a4f0-7721019d21be","resolution":{"observed_at":"2026-08-01T13:40:45.628829Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.706527Z","title":"Avogadri et al., Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells, Phys","venue":null,"work_id":null,"year":2022},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":39,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.706527Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:d26bc6c4648f28911709e91519313553cf0c35284fe10c20e5f746e8f49f044d","observation_id":"5d7af319-2e56-4ee7-840d-ebe38455c529","resolution":{"observed_at":"2026-08-01T13:40:45.706527Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.794875Z","title":"Du et al., Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators, Phys","venue":null,"work_id":null,"year":2017},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":40,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.794875Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:e226bbb70d3666e6c9b232bf653769be46485aa9c808cebe9d95601f21a8b6e6","observation_id":"0f3738a7-0aac-4afb-a3d5-d82521da431e","resolution":{"observed_at":"2026-08-01T13:40:45.794875Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.858653Z","title":"Charpentier, S","venue":null,"work_id":null,"year":2013},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":41,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.858653Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:b6c773477d1f229c14ee53dfef275e751b97ee27c19b2ddf7603bc8c2c327c12","observation_id":"c040c892-eef3-488d-80c3-02ca108d1a7b","resolution":{"observed_at":"2026-08-01T13:40:45.858653Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.928868Z","title":null,"venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":42,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.928868Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:8c407b4a8020436364c46269c6d145549a4b501887dec99cb860b0707033e37b","observation_id":"315a10ae-ad59-4997-bdbc-22ca2862087b","resolution":{"observed_at":"2026-08-01T13:40:45.928868Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:45.990046Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":43,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:45.990046Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:15d33bce37e3f791ad174b6ca5cf504b7f3ab0b3a2ad2a9ec6c066516a299ceb","observation_id":"6f279f0f-8ec6-48b6-8697-f3e0c6b9536f","resolution":{"observed_at":"2026-08-01T13:40:45.990046Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.062101Z","title":"Vurgaftman, J","venue":null,"work_id":null,"year":2001},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.062101Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:7990430a236fa8f30468e93bed06fcc093838b7449299c0dd5bf7249e85ea967","observation_id":"f5553346-a0af-4021-b504-59054c5e8fb2","resolution":{"observed_at":"2026-08-01T13:40:46.062101Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.148750Z","title":null,"venue":null,"work_id":null,"year":2009},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":45,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.148750Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:1347689734bd26e9970840acd10d3d1cca8a55c56b7ba76a9a485ccdd64691f9","observation_id":"1956efdb-6152-4c22-aa43-85d658e231a6","resolution":{"observed_at":"2026-08-01T13:40:46.148750Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.236512Z","title":"Nichele, A","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":46,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.236512Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:2624ceb9aec25b2478b3fdd23dd3e25a9c4d1fffbe9ebd0d7e9a8f4c2be106fa","observation_id":"8b6ac5bd-a0d0-4782-93db-464c30b6f2dc","resolution":{"observed_at":"2026-08-01T13:40:46.236512Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.301769Z","title":"Meyer, S","venue":null,"work_id":null,"year":2023},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":47,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.301769Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:3e7888514c66691f4e8b4e59f15e8075f2821719ac247497d744d95faf7ded0c","observation_id":"6acbd56b-f8b3-4416-8536-e39bc222a45e","resolution":{"observed_at":"2026-08-01T13:40:46.301769Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.367304Z","title":"Naveh and B","venue":null,"work_id":null,"year":2001},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":48,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.367304Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:dd7225093b2adb8f7ee5bc21fbd10f452071f631e6e00d43b850c030506746dd","observation_id":"520debe0-cd9e-4cc0-99de-e40e3d9b503f","resolution":{"observed_at":"2026-08-01T13:40:46.367304Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.431492Z","title":"Knez, Du Rui-Rui, and G","venue":null,"work_id":null,"year":2011},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":49,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.431492Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:88d9b3852ddf39346323becda08cf4ce16ca979f65a83c902a838d15faef22a7","observation_id":"007cb618-8ea9-4ae0-8be6-399d0070c38c","resolution":{"observed_at":"2026-08-01T13:40:46.431492Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.505211Z","title":"Benlenqwanssa et al., Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence, Phys","venue":null,"work_id":null,"year":2024},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":50,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.505211Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:eb88ae3abdd85c409e799bb3a00e71ab6e5ed474051d06e7da4fed12edcaceb6","observation_id":"a1bf49da-fed7-43a0-8361-5c5feeac494b","resolution":{"observed_at":"2026-08-01T13:40:46.505211Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.586875Z","title":"Lunczer, P","venue":null,"work_id":null,"year":2019},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":51,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.586875Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:d94d34d63d7ae623794a0461eba5f8b54eccd17591df499c8c647c53f3acc3c3","observation_id":"29022e87-961e-4f3c-9477-6bb6a8161944","resolution":{"observed_at":"2026-08-01T13:40:46.586875Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.671091Z","title":"Chatterjee, S","venue":null,"work_id":null,"year":1994},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":52,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.671091Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:d86d8ac14db61867c0b4f215f6ea4a423fe9ee8e497e28ae7cc9b690eeb6404f","observation_id":"575c16ce-1b84-438a-9f4a-91fcd94d2357","resolution":{"observed_at":"2026-08-01T13:40:46.671091Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.761903Z","title":null,"venue":null,"work_id":null,"year":1993},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":53,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.761903Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:a21c747d33e8dae2be3a4651d69238d7a682c851e4f1072ead8288241081de5b","observation_id":"40521e0f-efcc-40f7-bde4-45b90ee9db35","resolution":{"observed_at":"2026-08-01T13:40:46.761903Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-01T13:40:46.815663Z","title":null,"venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators","version":1},"reference_index":54,"source":"pdf_text","source_observed_at":"2026-08-01T13:40:46.815663Z"},"links":{"citing_paper":"/paper/2607.19051"},"observation_digest":"sha256:3b852b711cffea002c74ddabbe6c79b492db22dbacc5d5ebfd825341947f9b35","observation_id":"3638f68d-f4b6-4ebb-b00f-1a828829b98d","resolution":{"observed_at":"2026-08-01T13:40:46.815663Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}}],"paper":{"arxiv_id":"2607.19051","last_updated":"2026-07-21T12:38:33Z","latest_version":1,"primary_category":"cond-mat.mes-hall","snapshot_observed_at":"2026-08-04T14:31:28.774745Z","submitted_at":"2026-07-21T12:38:33Z","title":"Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators"},"reference_resolution":{"displayed":54,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":54,"verified_exact":0,"verified_fuzzy":0},"total_outbound_references":54},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-07T06:34:17.273281+00:00","source":"crossref"},{"observed_at":"2026-08-07T06:34:11.927384+00:00","source":"retraction_watch"}],"thesis":"As of 7 August 2026, this Paper Citation Record lists 54 of 54 outbound references and 0 inbound Pith citation observations for arXiv:2607.19051."}