{"as_of":"2026-08-15T15:50:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:9d088c47d899f9105ce17273eec62de59fce509f0a2dbeea9c96a236d9ed43de","coverage":[{"denominator":12,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":12,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-31T01:16:11.710620Z","state":"measured"},{"denominator":12,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":12,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-15T06:32:42.880941+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.25102/citation-record","integrity":"/paper/2607.25102/integrity","json":"/paper/2607.25102/citation-record.json","paper":"/paper/2607.25102"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:10.831430Z","title":"2 1.1 Optical micrographs","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":1,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:10.831430Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:a436ed948672884e5b1a521c511df7a578bfcd1b4c02946bddeb1fde27045707","observation_id":"d0c6838c-23a5-4bfd-b3e7-4c85f8800db5","resolution":{"observed_at":"2026-07-31T01:16:10.831430Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:10.877607Z","title":"3 2.1 IV curves of Sample O1","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":2,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:10.877607Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:313a0c3e5f9c86255936ebdb0e0a7dea9be8f4c83f5198b8149500026cf6fa77","observation_id":"fe48668e-d57a-4b1b-8ba7-db6cb2b996b7","resolution":{"observed_at":"2026-07-31T01:16:10.877607Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:10.955512Z","title":"6 3.1 Photocurrent data of sample O1 and schemata or according bands","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:10.955512Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:7d5a267c0296b68a5aa0928f7ee41e36576bfb307a145b10c86c7a5feaeafbb3","observation_id":"e3988faf-418a-4894-bb26-13fc4b27011a","resolution":{"observed_at":"2026-07-31T01:16:10.955512Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.016047Z","title":"11 4.1 KPFM potential data of Sample O1","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.016047Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:1f3d7949d28b36e84d7ec57402a399db0a6bd8c9cf5d5dcfa1e99e09dcfbd128","observation_id":"31aead68-b0e4-4e1d-9aaf-c3b43932589e","resolution":{"observed_at":"2026-07-31T01:16:11.016047Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.091456Z","title":"16 5.1 Experimental Setup of electric transport measurements","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":5,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.091456Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:18a1eb60e839b896985bde2ba57f997c0546847636851c242f4ab5e272bc4fb8","observation_id":"931d4998-a3d4-4780-a322-4a1367d7f72e","resolution":{"observed_at":"2026-07-31T01:16:11.091456Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.229220Z","title":"In each image the gold contacts are shown with the gap in between","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":8,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.229220Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:8d842bdc1d26d1543fad5054d7d5147cca3f9404d25726553053d2d81f8c1414","observation_id":"690e9a25-87bb-409a-9e3e-940cafdbf348","resolution":{"observed_at":"2026-07-31T01:16:11.229220Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.352433Z","title":"The sample is globally excited by laser light with a wavelength of 532 nm and thus with an energy of E𝑙𝑎𝑠𝑒𝑟 = 2.33 eV that is well above the band gap of MoS2","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":9,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.352433Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:eb772a79ee136194637b83f7d92c502c4d1b6491afd5c156bce7ecdd6dab0d1b","observation_id":"daca4e93-3577-4439-8477-8afa4881969d","resolution":{"observed_at":"2026-07-31T01:16:11.352433Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.488333Z","title":"The laser light with a wavelength of 532 nm is focused on the sample and scanned over it in steps of 2 μm","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":10,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.488333Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:5fd6ae9e8e880a9875641f9315e6179d4e818687d3a2168f1be671d041bee679","observation_id":"a6ce3b88-4d25-45c1-890e-29a5b55992f7","resolution":{"observed_at":"2026-07-31T01:16:11.488333Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.647652Z","title":null,"venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":11,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.647652Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:9f4882d7b22d34fb1107eadbf9e3e4fafe466b1629fc5915fea3ec7d8ffa0881","observation_id":"10987978-f5d5-46ac-96b6-1ec655dd7612","resolution":{"observed_at":"2026-07-31T01:16:11.647652Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:11.710620Z","title":"A voltage is applied to the sample and the current is measured","venue":null,"work_id":null,"year":null},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":12,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:11.710620Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:045475e93d0e6de2f0fbdf2cceaf0eaf87031a69a97b472d234c372f72ab7e9b","observation_id":"12599c11-036e-44e7-abe7-ba548a31ca67","resolution":{"observed_at":"2026-07-31T01:16:11.710620Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T01:16:10.721693Z","title":"(10)Li, S.-L","venue":null,"work_id":null,"year":2014},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":363,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:10.721693Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:453d52aa9fab68a7d79ea03aef1f9df53474e60ec0d04abd0f341dbdc5977d23","observation_id":"f2e69ddd-4faf-47c3-bdc9-e5aad02af78b","resolution":{"observed_at":"2026-07-31T01:16:10.721693Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acsmaterialslett.5c01010","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"(40)Sadewasser, S","venue":"ACS Materials Letters","work_id":"e5b48ad2-757e-4f74-9f54-0a455b8df8cb","year":2008},"citing_paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM","version":1},"reference_index":3205,"source":"pdf_text","source_observed_at":"2026-07-31T01:16:10.773189Z"},"links":{"citing_paper":"/paper/2607.25102"},"observation_digest":"sha256:b18853fa4360b1fa4e0932083e29aef47306dadd65b4125be7f211104c88fd09","observation_id":"36f7f3d4-5e99-478a-9b1a-0655f0a0e1fb","resolution":{"observed_at":"2026-07-31T01:20:49.776870Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2607.25102","last_updated":"2026-07-27T22:03:04Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-15T15:00:33.692604Z","submitted_at":"2026-07-27T22:03:04Z","title":"Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM"},"reference_resolution":{"displayed":12,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":11,"verified_exact":1,"verified_fuzzy":0},"total_outbound_references":12},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"thesis":"As of 15 August 2026, this Paper Citation Record lists 12 of 12 outbound references and 0 inbound Pith citation observations for arXiv:2607.25102."}