{"as_of":"2026-08-15T14:43:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:da5761aa8c3570d20986ccb879edd0c0fc2358da3533b2cefcd4550d3b7cd07e","coverage":[{"denominator":26,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":26,"source":"paper_references, paper_reference_links","source_observed_at":"2026-07-31T22:49:17.194743Z","state":"measured"},{"denominator":26,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":26,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-15T06:32:42.880941+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2607.27939/citation-record","integrity":"/paper/2607.27939/integrity","json":"/paper/2607.27939/citation-record.json","paper":"/paper/2607.27939"},"outbound":[{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.72.125328","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Warschkow , author H","venue":"Physical Review B","work_id":"0c976da9-143f-4069-94ac-571c99e4a3aa","year":2005},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":1,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.233074Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:d811612e038fea5487f06fa19b3dd86bd11c68ab025a83e5fd1636ce5cee310b","observation_id":"9e6b9fcf-7898-4b78-953c-677643fa28f4","resolution":{"observed_at":"2026-07-31T22:50:58.233534Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.74.195310","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"280e7926-340d-4459-9bc4-9c76263aaf87","year":2006},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":2,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.300153Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:587d0fd7470d7d8985af19fbdb5c0ffe926a14885fc0bf5762f5a2c7f507ba55","observation_id":"784d918b-e08a-410e-8c01-e18d2d730e6a","resolution":{"observed_at":"2026-07-31T22:50:58.155496Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.4939124","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Warschkow , author N","venue":"The Journal of Chemical Physics","work_id":"6345bd07-2e6c-4e8c-8def-3d57fba17df6","year":2016},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":3,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.364746Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:0972d9db50f0a3a6a62129abd5dcd9320b40d945b5270ee739de09bfe0447c9f","observation_id":"6b29d796-5208-48ab-8138-a0f129700efc","resolution":{"observed_at":"2026-07-31T22:50:58.040181Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevlett.91.136104","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review Letters","work_id":"c8e2f624-6bdb-4d9e-9402-d38091a031a8","year":2003},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":4,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.494742Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:0205fc38ce274e9d1437614b3c6a442b135c828a291459aedca2ee523a514ac0","observation_id":"cf341f9c-d488-4fcd-b0c8-6320806e1b54","resolution":{"observed_at":"2026-07-31T22:50:57.930456Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/1.3269924","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Applied Physics Letters","work_id":"622dfb4e-0c66-4da6-9f51-85a4631797c4","year":2009},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":5,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.557691Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:2f017e98bce15ba119f15e5f16fc98e459a9df3a95f5b53bab837667c2d545d4","observation_id":"1d3a773b-9928-4d1f-bd63-1ca7ce1f7696","resolution":{"observed_at":"2026-07-31T22:50:57.822696Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.79.165311","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"90917235-d654-4581-b636-757ad4447eca","year":2009},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":6,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.634747Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:bc433994c94c68f7defcab8dbc2e1c5e5ca2db7b7f3f08f9afadd17907733e66","observation_id":"96d70dee-eb92-4b30-b920-95f81aad9377","resolution":{"observed_at":"2026-07-31T22:50:57.707970Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.69.195303","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"b86b6e73-a2b7-453a-a68e-df53946a927d","year":2004},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":7,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.723338Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:4b1283ced521f067e418699182a37c3020579b994c9401bff625de14f8ed1b21","observation_id":"4cd30e7b-d150-4f8e-a79b-ae5704cb7b20","resolution":{"observed_at":"2026-07-31T22:50:57.551626Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1016/j.susc.2005.10.031","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Reusch , author N","venue":"Surface Science","work_id":"89e71eb6-8eab-4cb9-aaac-c69dda2a5e2a","year":2005},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":8,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.785470Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:20c80c04e7d3426edabe3e2692531e960fed242f82ff270a647ccf5115f4f4e7","observation_id":"ac25288b-a94e-4346-b027-650fb4369f09","resolution":{"observed_at":"2026-07-31T22:50:57.326484Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/jp068834c","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"The Journal of Physical Chemistry C","work_id":"922790a3-f151-4111-b9ce-8ef04ae6f63f","year":2007},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":9,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.874750Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:2d5d019c29eb22d3fb25ca30b448ca16021e1cdd140e15374790ffc949fdbea7","observation_id":"c7d250f7-5006-44e3-b7b5-10f0bf179a75","resolution":{"observed_at":"2026-07-31T22:50:57.243739Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1002/adma.202312736","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"\\ Hsueh , author D","venue":"Advanced Materials","work_id":"e7b77dfc-63d1-43f0-94e1-b223c8e96de4","year":2024},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":10,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:14.945889Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:d1916b0f847f64f3202e372f0c02f0eaaae6ded1016fa3192728daea5d2d12dd","observation_id":"f175853f-a26b-4c8c-aaca-08fe7c7763d1","resolution":{"observed_at":"2026-07-31T22:50:57.138304Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0185671","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"The Journal of Chemical Physics","work_id":"55e51bc3-3d09-46c3-bf4c-6cff7f1d81c7","year":2024},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":11,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:15.006175Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:4fc4873e8d5dc21d8cef6bee6811a284dd4152257ac46ee3b172cae80336aa5d","observation_id":"b34c5aa4-4978-4a3e-89b5-650909dc938a","resolution":{"observed_at":"2026-07-31T22:50:57.020103Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1063/5.0266110","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"The Journal of Chemical Physics","work_id":"dfa6b2d8-8d12-4df3-8720-a4b502cc144e","year":2025},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":12,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.104742Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:810d74b30604fcd398a8059af668dc21b4df1346965a75dca5c3ada3d76c41d9","observation_id":"9cc76101-dfcd-45ba-9450-6540451e2ea3","resolution":{"observed_at":"2026-07-31T22:50:56.905407Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1021/acs.jpcc.3c00421","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"The Journal of Physical Chemistry C","work_id":"e00744de-cb5e-4bf6-9472-2efb89e5b1c6","year":2023},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":13,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.236979Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:f9c2da2281c47db36c7e340df9e5e6edacc860fc2c5316a5fa7b7daf7bc31183","observation_id":"82fc48f8-c481-42e0-ae1f-c010f3480255","resolution":{"observed_at":"2026-07-31T22:50:56.799446Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1039/d5cp03294f","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Chemistry Chemical Physics","work_id":"cf58489a-a413-450b-a0a6-a707842ba6bf","year":2025},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":14,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.324751Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:78b04d000bbbaae04aed932f5638711b708754997a9e8f5bd882b71be5e1f8ae","observation_id":"6b1cd812-1903-4725-8d5e-fe390d5aba96","resolution":{"observed_at":"2026-07-31T22:50:56.685691Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.72.195323","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"ae81d288-de25-4039-98e4-c6038dd86645","year":2005},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":15,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.388794Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:17aacdf3359fb3187a59b6c0462f20736996f6418e6d42c91ead18ddf70c8394","observation_id":"c020cb89-0be0-4a1e-a5bb-18867743e1c6","resolution":{"observed_at":"2026-07-31T22:50:56.569792Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.431392Z","title":"Horcas , author R","venue":null,"work_id":null,"year":2007},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":16,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.431392Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:ec07b1ca84c38fa53846eaa4732d3113031d99c6cac20f43bc1d7995d1a56ca0","observation_id":"e4bbe0b4-2f51-4870-9899-4029f13e5bea","resolution":{"observed_at":"2026-07-31T22:49:16.431392Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.494741Z","title":null,"venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":17,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.494741Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:6972e687a52d8da5fb4674ae55037723624995e93c4484d16b860bd158e9c1d4","observation_id":"2f27a24d-cc7c-4383-aa62-8ab0db261196","resolution":{"observed_at":"2026-07-31T22:49:16.494741Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.545244Z","title":"Kresse \\ and\\ author J","venue":null,"work_id":null,"year":1996},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":18,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.545244Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:14ef168d57178570eaf737dc5630c03b92ca80c0c2650d76b1ec00b3112c08cb","observation_id":"3adafb49-6b2d-45f9-aaae-f3475161599c","resolution":{"observed_at":"2026-07-31T22:49:16.545244Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.594740Z","title":"Kresse \\ and\\ author D","venue":null,"work_id":null,"year":1999},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":19,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.594740Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:84a5bc10ca51ff70b625577f298d4dc638c918df4945f5a86bd4e1facbf8f375","observation_id":"c4af597e-d903-4732-9508-2003902d151b","resolution":{"observed_at":"2026-07-31T22:49:16.594740Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.674745Z","title":"Tersoff \\ and\\ author D","venue":null,"work_id":null,"year":1985},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":20,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.674745Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:743afbf03a8ed2897aec13cb9afa6fb0e1981ca7aba850be016de1307742e0f6","observation_id":"a751b2bf-94eb-4b81-b424-829e9931a4b4","resolution":{"observed_at":"2026-07-31T22:49:16.674745Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.730852Z","title":"J \\'o nsson , author G","venue":null,"work_id":null,"year":1998},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":21,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.730852Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:cd046b03a159aef5803a590e661107004f559e147e8aa9fd037b7ff139b033d0","observation_id":"023218ab-cad4-4ebd-ab6b-2cfadf16264c","resolution":{"observed_at":"2026-07-31T22:49:16.730852Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.49.11071","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Rioux , author M","venue":"Physical review. B, Condensed matter","work_id":"46227210-3de3-49e3-be2a-3bc0b4f72d4b","year":1994},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":22,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.894737Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:eb470c211ef4358565e819af3afafd872d23a10770355d747f199aaec3aef2c2","observation_id":"e243c146-17e4-4788-9d52-1932fc653bbd","resolution":{"observed_at":"2026-07-31T22:50:56.345716Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-07-31T22:49:16.966725Z","title":null,"venue":null,"work_id":null,"year":2004},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":23,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:16.966725Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:0d65bade28abf3877796e920a7d2eca3d176d7c4d3c5dc659ca420f509518287","observation_id":"8ba36699-af4e-4ed0-977b-df16f52e60be","resolution":{"observed_at":"2026-07-31T22:49:16.966725Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.74.113311","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"5fbddca6-a308-47cc-a7ac-8ac5bf5b8f76","year":2006},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":24,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:17.026857Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:da3547518fb2a66c84af31681e84c41b1be50f4e2f70e4d7df09d9d0bce5e15c","observation_id":"8b99c64e-3b38-4b4a-9139-d275cb18c4ae","resolution":{"observed_at":"2026-07-31T22:50:56.231769Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.87.155316","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":"Sagisaka , author M","venue":"Physical Review B","work_id":"905912e0-aa66-468b-8157-3258d25bacd6","year":2013},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":25,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:17.084742Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:8b3246231f80064c9fd4254a0b32f79acdfb3d91b2d1378d00e537e1c0c07b21","observation_id":"b8d380c9-a88a-4fd1-ab9b-cf81c00934f0","resolution":{"observed_at":"2026-07-31T22:50:56.108306Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":"10.1103/physrevb.82.235417","metadata_source":"openalex","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-05T02:28:24.338817Z","title":null,"venue":"Physical Review B","work_id":"ccaf9f09-9eb1-4dab-a158-22bd7d533c24","year":2010},"citing_paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)","version":1},"reference_index":26,"source":"arxiv_source","source_observed_at":"2026-07-31T22:49:17.194743Z"},"links":{"citing_paper":"/paper/2607.27939"},"observation_digest":"sha256:746a90f5a35d4482edeb091c5eb8617ce2573fa230feb86b0c6f70eecd75805a","observation_id":"816710ce-3e9a-4486-a585-c23bf0edaebf","resolution":{"observed_at":"2026-07-31T22:50:56.002328Z","resolver_source":"doi","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-15T06:32:42.880941+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2607.27939","last_updated":"2026-07-30T09:48:24Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-05T13:30:21.857199Z","submitted_at":"2026-07-30T09:48:24Z","title":"STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)"},"reference_resolution":{"displayed":26,"state_counts":{"malformed_identifier":0,"metadata_mismatch":0,"parse_uncertain":0,"unresolved":7,"verified_exact":19,"verified_fuzzy":0},"total_outbound_references":26},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-15T06:32:42.880941+00:00","source":"crossref"},{"observed_at":"2026-08-15T06:32:39.529945+00:00","source":"retraction_watch"}],"thesis":"As of 15 August 2026, this Paper Citation Record lists 26 of 26 outbound references and 0 inbound Pith citation observations for arXiv:2607.27939."}