{"as_of":"2026-08-13T12:47:00Z","caps":{"database_statements":6,"inbound":100,"outbound":100},"context_digest":"sha256:4e38358a892470d8d7ba350bfa67d5269890e106552a98e415fb73beffb65e1d","coverage":[{"denominator":5,"lane":"reference_resolution","note":"Typed states for the displayed outbound observations.","records_observed":5,"source":"paper_references, paper_reference_links","source_observed_at":"2026-08-11T04:17:51.827640Z","state":"measured"},{"denominator":5,"lane":"standing_notices","note":"One-hop event checks from named stored sources.","records_observed":5,"source":"scholarly_work_events, retraction_status_cache","source_observed_at":"2026-08-13T06:32:02.005865+00:00","state":"measured"},{"denominator":0,"lane":"inbound_itemization","note":"Pith citing papers itemized under the disclosed page cap.","records_observed":0,"source":"paper_references, paper_reference_links","source_observed_at":null,"state":"measured"},{"denominator":1,"lane":"external_citation_measurements","note":"A source-named dated measurement, never combined with another source.","records_observed":0,"source":"cited_works","source_observed_at":null,"state":"measured"}],"external_citation_measurements":[],"inbound":[],"links":{"evidence":"/evidence","html":"/paper/2608.07823/citation-record","integrity":"/paper/2608.07823/integrity","json":"/paper/2608.07823/citation-record.json","paper":"/paper/2608.07823"},"outbound":[{"citation":{"cited_paper":{"arxiv_id":"2607.10908","last_updated":"2026-07-12T20:24:37Z","snapshot_observed_at":"2026-08-09T01:38:37.098706Z","submitted_at":"2026-07-12T20:24:37Z","title":"High-Mobility Ge-Doped $\\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition","version":1},"cited_work":{"arxiv_id":"2607.10908","doi":null,"metadata_source":"pith","pith_arxiv_id":"2607.10908","snapshot_observed_at":"2026-08-11T04:17:51.938097Z","title":"High-Mobility Ge-Doped $\\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition","venue":"cond-mat.mtrl-sci","work_id":"d904e8bc-729d-4554-8d45-103beee70465","year":2026},"citing_paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films","version":1},"reference_index":3,"source":"pdf_text","source_observed_at":"2026-08-11T04:17:51.817717Z"},"links":{"cited_paper":"/paper/2607.10908","citing_paper":"/paper/2608.07823"},"observation_digest":"sha256:d577f5d5b733bd68d08cbbd02ad337ab6164ef6b0bea84983fceeebd2960e334","observation_id":"75f55a87-14c5-45be-9e24-4f57398a43d6","resolution":{"observed_at":"2026-08-11T04:17:51.942930Z","resolver_source":"local_arxiv","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":"2017.26973","doi":null,"metadata_source":"raw_reference","pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T04:17:51.924287Z","title":"B.; Weber, J","venue":null,"work_id":"ed45ef12-ed89-4d4f-bc58-69aa8c71855b","year":2010},"citing_paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films","version":1},"reference_index":4,"source":"pdf_text","source_observed_at":"2026-08-11T04:17:51.821241Z"},"links":{"citing_paper":"/paper/2608.07823"},"observation_digest":"sha256:4dfcc0f46aa9e7f6005f7cab6926228692a12059a5a548a0c61f3fa4bdd93be4","observation_id":"c2e281c9-b220-4156-b792-972af8c92e67","resolution":{"observed_at":"2026-08-11T04:17:51.929673Z","resolver_source":"raw_fallback","status":"metadata_mismatch"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T04:17:51.808714Z","title":null,"venue":null,"work_id":null,"year":2018},"citing_paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films","version":1},"reference_index":44,"source":"pdf_text","source_observed_at":"2026-08-11T04:17:51.808714Z"},"links":{"citing_paper":"/paper/2608.07823"},"observation_digest":"sha256:0ad281b6bc487d1ab69c6fc368c882fa753a3116b91393c9b37bc7e5ccf07a3f","observation_id":"a7764bc8-2d5d-4100-8bcc-76ee48b0c1be","resolution":{"observed_at":"2026-08-11T04:17:51.808714Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":null,"cited_work":{"arxiv_id":null,"doi":null,"metadata_source":null,"pith_arxiv_id":null,"snapshot_observed_at":"2026-08-11T04:17:51.827640Z","title":"Intrinsic electron mobility limits in β-Ga2O3","venue":null,"work_id":null,"year":2016},"citing_paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films","version":1},"reference_index":230,"source":"pdf_text","source_observed_at":"2026-08-11T04:17:51.827640Z"},"links":{"citing_paper":"/paper/2608.07823"},"observation_digest":"sha256:e0e46b63e1a88febd7b147ffb7633adfd40e438b14fe1822c0ede2eeb0b77960","observation_id":"d8b3c213-b1e5-4022-b70a-98b56ab70fb0","resolution":{"observed_at":"2026-08-11T04:17:51.827640Z","resolver_source":null,"status":"unresolved"},"standing_notice":{"events":[],"reason":"canonical_work_link_unavailable","source_receipts":[],"state":"unavailable"}},{"citation":{"cited_paper":{"arxiv_id":"2607.10907","last_updated":"2026-07-12T20:24:22Z","snapshot_observed_at":"2026-08-03T23:21:44.496797Z","submitted_at":"2026-07-12T20:24:22Z","title":"High-Quality Ge-Doped (010) $\\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics","version":1},"cited_work":{"arxiv_id":"2607.10907","doi":null,"metadata_source":"pith","pith_arxiv_id":"2607.10907","snapshot_observed_at":"2026-08-11T04:17:51.951656Z","title":"High-Quality Ge-Doped (010) $\\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics","venue":"cond-mat.mtrl-sci","work_id":"89e79201-0975-43f9-bb2d-4add3d0088b4","year":2026},"citing_paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films","version":1},"reference_index":2026,"source":"pdf_text","source_observed_at":"2026-08-11T04:17:51.814185Z"},"links":{"cited_paper":"/paper/2607.10907","citing_paper":"/paper/2608.07823"},"observation_digest":"sha256:234432dc75e23c248ea80bf1c1418e6e434712a69b3bfb960363416391966960","observation_id":"b47077d9-48cf-4472-93c2-8b84750345f3","resolution":{"observed_at":"2026-08-11T04:17:51.956284Z","resolver_source":"local_arxiv","status":"verified_exact"},"standing_notice":{"events":[],"observation":"No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.","reason":null,"source_receipts":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"state":"measured"}}],"paper":{"arxiv_id":"2608.07823","last_updated":"2026-08-07T23:52:29Z","latest_version":1,"primary_category":"cond-mat.mtrl-sci","snapshot_observed_at":"2026-08-13T12:11:30.027060Z","submitted_at":"2026-08-07T23:52:29Z","title":"Sn-Doping in LPCVD-Grown (010) $\\beta$-Ga$_2$O$_3$ Films"},"reference_resolution":{"displayed":5,"state_counts":{"malformed_identifier":0,"metadata_mismatch":2,"parse_uncertain":0,"unresolved":2,"verified_exact":1,"verified_fuzzy":0},"total_outbound_references":5},"refusal":"A citation records a reference. It does not transfer a finding from one paper to another.","schema":"pith.paper-citation-record.v1","standing_sources":[{"observed_at":"2026-08-13T06:32:02.005865+00:00","source":"crossref"},{"observed_at":"2026-08-13T06:31:53.387327+00:00","source":"retraction_watch"}],"thesis":"As of 13 August 2026, this Paper Citation Record lists 5 of 5 outbound references and 0 inbound Pith citation observations for arXiv:2608.07823."}