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arxiv: 2605.20685 · v1 · pith:P57LGD4Hnew · submitted 2026-05-20 · ❄️ cond-mat.supr-con · cond-mat.str-el

Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements

Ryosuke Koizumi , Hayao Fujimoto , Teppei Takahashi , Azumi Yashiro , Haruna Kawakami , Kazuki Ishii , Hinako Kosaka , Takeshi Hasegawa
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Yusei Shimizu Ai Nakamura Dai Aoki Kenichi Tenya Makoto Yokoyama
This is my paper

Pith reviewed 2026-05-21 02:29 UTC · model grok-4.3

classification ❄️ cond-mat.supr-con cond-mat.str-el
keywords CeCoIn5Ni dopingHall resistivitycarrier densityheavy fermion superconductoranomalous transportupper critical field
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The pith

Ni doping in CeCoIn5 increases the carrier density linearly and suppresses anomalous Hall effects near the superconducting critical field.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper investigates the impact of nickel substitution for cobalt in the heavy-fermion superconductor CeCoIn5 through Hall resistivity measurements across doping levels up to x=0.3. It establishes that the carrier density, derived from the Hall coefficient at 0.5 K in high fields, rises linearly with nickel content, demonstrating that Ni ions function as electron dopants. In the pure compound, the negative Hall coefficient shows strong enhancements near the upper critical field Hc2 and in the low-field region above the transition temperature Tc, but these features are markedly reduced with increasing Ni doping. The work clarifies how controlled carrier addition modifies both the electronic density and the unusual transport signatures in this material system.

Core claim

The carrier density, estimated from the Hall coefficient RH at a temperature of 0.5 K in high magnetic fields, increases linearly with x, indicating that the doped Ni ions act as electron dopants. The magnitude of -RH is strongly enhanced near Hc2 and in the low-field region above Tc in pure CeCoIn5, but these anomalies are significantly suppressed by Ni doping.

What carries the argument

Hall coefficient RH obtained from Hall resistivity measurements at low temperature and high magnetic field, interpreted via the single-band relation to extract carrier density.

If this is right

  • Each added Ni atom donates one electron to the conduction band, shifting the Fermi level in a predictable manner.
  • The suppression of Hall anomalies implies that doping reduces the strength of fluctuations or scattering mechanisms active in the pure compound.
  • Doping offers a continuous tuning parameter to move the system away from the regime of enhanced transport anomalies.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Similar Hall-coefficient anomalies and their suppression upon doping may occur in other Ce-based heavy-fermion superconductors, offering a general route to study fluctuation effects.
  • If the observed suppression arises from weakened superconducting fluctuations, measurements of fluctuation conductivity or magnetoresistance in the same samples could test this link directly.
  • The linear carrier-density shift provides a controlled way to explore how electron count influences the superconducting dome in the broader CeMIn5 family.

Load-bearing premise

The high-field low-temperature Hall coefficient directly yields the carrier density via the standard single-band relation without substantial contributions from anomalous Hall terms, multiband effects, or superconducting fluctuations.

What would settle it

An independent determination of carrier density, for instance through the frequency of quantum oscillations or through specific-heat analysis, that fails to increase linearly with Ni concentration would contradict the electron-dopant interpretation.

Figures

Figures reproduced from arXiv: 2605.20685 by Ai Nakamura, Azumi Yashiro, Dai Aoki, Haruna Kawakami, Hayao Fujimoto, Hinako Kosaka, Kazuki Ishii, Kenichi Tenya, Makoto Yokoyama, Ryosuke Koizumi, Takeshi Hasegawa, Teppei Takahashi, Yusei Shimizu.

Figure 1
Figure 1. Figure 1: FIG. 1. (a) Comparison of nominal ( [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2. The temperature dependence of the Hall coefficient [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3. (a) The dependence of the Hall coefficient [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4. Magnetic field dependence of the Hall coefficient [PITH_FULL_IMAGE:figures/full_fig_p005_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5. The magnetic field dependence of the electrical resis [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗
read the original abstract

We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall coefficient $R_{\rm H}$ at a temperature of 0.5 K in high magnetic fields, increases linearly with $x$, indicating that the doped Ni ions act as electron dopants. In CeCoIn$_5$, the magnitude of $-R_{\rm H}$ is strongly enhanced at magnetic fields near the superconducting upper critical field $H_{c2}$ and in the low-field region above the superconducting transition temperature $T_c$. However, these anomalies are found to be significantly suppressed by Ni doping. Possible origins of this suppression in $-R_{\rm H}$ are discussed.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript reports Hall resistivity measurements on CeCo_{1-x}Ni_xIn_5 (x ≤ 0.3). It claims that the carrier density estimated from the Hall coefficient R_H at T = 0.5 K in high magnetic fields increases linearly with x, indicating that Ni ions act as electron dopants. It further reports that the strong enhancements of -R_H near H_c2 and in the low-field region above T_c seen in pure CeCoIn5 are significantly suppressed by Ni doping, with possible origins discussed.

Significance. If the high-field, low-temperature R_H reliably isolates the ordinary Hall coefficient, the linear carrier-density trend would provide direct evidence that Ni substitution tunes the electron count in this heavy-fermion superconductor, while the suppression of the anomalies would link doping to reduced fluctuations or scattering. Such results would be useful for mapping how carrier doping affects the quantum-critical and superconducting properties of CeCoIn5.

major comments (2)
  1. [Results and carrier-density estimation] The central claim that carrier density n increases linearly with x rests on the single-band conversion n = 1/(e R_H) applied to the high-field (above H_c2), T = 0.5 K data. CeCoIn5 is a known multiband heavy-fermion metal; the manuscript should explicitly justify why multiband contributions, residual skew scattering from Ce 4f moments, or an anomalous Hall term linear in magnetization can be neglected in this regime, as these effects could alter the extracted slope or its interpretation.
  2. [Discussion of anomalous transport] The reported suppression of the low-field and near-H_c2 anomalies in -R_H with Ni doping is presented without visible error bars, full raw datasets, or explicit exclusion criteria for the high-field slope extraction. This makes it difficult to assess whether the suppression is statistically robust or whether the high-field R_H itself remains free of the contaminants raised above.
minor comments (1)
  1. Notation for the Hall coefficient is occasionally written as R_H and R_{rm H}; consistent use of the same subscript style throughout would improve readability.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful reading and constructive comments on our manuscript. We have revised the text to address the concerns about carrier-density estimation and data presentation, as detailed below.

read point-by-point responses

  1. Referee: [Results and carrier-density estimation] The central claim that carrier density n increases linearly with x rests on the single-band conversion n = 1/(e R_H) applied to the high-field (above H_c2), T = 0.5 K data. CeCoIn5 is a known multiband heavy-fermion metal; the manuscript should explicitly justify why multiband contributions, residual skew scattering from Ce 4f moments, or an anomalous Hall term linear in magnetization can be neglected in this regime, as these effects could alter the extracted slope or its interpretation.

    Authors: We agree that a more explicit justification is warranted. In the revised manuscript we have added a paragraph noting that, for CeCoIn5 and its doped variants, the Hall resistivity becomes strictly linear in field above H_c2 at T = 0.5 K; the slope therefore isolates the ordinary Hall coefficient. Prior Hall studies on pure CeCoIn5 (cited in the revision) have employed the same single-band conversion and obtained consistent carrier densities with other probes. Multiband averaging yields an effective total carrier density in this high-field limit. Skew-scattering and magnetization-linear anomalous-Hall terms are suppressed once the Ce 4f moments are fully polarized at 0.5 K and high fields, leaving the slope unaffected; we now state this explicitly with supporting references. revision: yes

  2. Referee: [Discussion of anomalous transport] The reported suppression of the low-field and near-H_c2 anomalies in -R_H with Ni doping is presented without visible error bars, full raw datasets, or explicit exclusion criteria for the high-field slope extraction. This makes it difficult to assess whether the suppression is statistically robust or whether the high-field R_H itself remains free of the contaminants raised above.

    Authors: We have added error bars to all panels showing the field and temperature dependence of R_H. A new subsection in the Methods now details the linear-fit window used for the high-field slope (typically 8–14 T) and the criteria for excluding data points affected by superconducting fluctuations. Full raw datasets are available from the corresponding author upon reasonable request; we have inserted a data-availability statement to this effect. revision: yes

Circularity Check

0 steps flagged

No circularity: purely experimental Hall measurements with direct data interpretation

full rationale

The paper reports experimental Hall resistivity data on CeCo1-xNixIn5, estimates carrier density via the standard single-band relation n = 1/(e RH) applied to high-field low-T measurements, and describes observed suppression of anomalies with doping. No derivations, fitted parameters renamed as predictions, self-citation chains, or ansatzes appear in the load-bearing steps; all claims rest on measured trends without reduction to inputs by construction. The analysis is self-contained against external benchmarks and does not invoke uniqueness theorems or prior author results to force conclusions.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claims rest on the standard single-band interpretation of the Hall coefficient in the high-field limit and on the assumption that the measured anomalies are intrinsic to the normal state of the doped compound.

axioms (1)
  • domain assumption In the high-field low-temperature limit the Hall coefficient RH equals 1/(n e) where n is the carrier density.
    Invoked to convert measured RH at 0.5 K and high fields into carrier density that increases linearly with x.

pith-pipeline@v0.9.0 · 5737 in / 1302 out tokens · 69440 ms · 2026-05-21T02:29:32.478097+00:00 · methodology

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