Atomic structure and electronic properties of the cleavage InAs(110) surface

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a function of the structural parameters of the surface. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. Finally, we discuss which atomic model better resembles the available experimental data.