{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2025:25SM65WWUFUSL6GL4DQAIMJDRX","short_pith_number":"pith:25SM65WW","schema_version":"1.0","canonical_sha256":"d764cf76d6a16925f8cbe0e00431238ddfec45e7ce0b0d75b6412176d457729e","source":{"kind":"arxiv","id":"2509.09964","version":2},"attestation_state":"computed","paper":{"title":"Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andrew J. Mannix, Andrey Krayev, Anh Tuan Hoang, Anton E. O. Persson, \\'Ashildur Fri{\\dh}riksd\\'ottir, Eric Pop, Haotian Su, Jerry A. Yang, Kathryn Neilson, Lauren Hoang, Paul C. McIntyre, Shan X. Wang, Tara Pe\\~na, Young Suh Song, Yuan-Mau Lee, Zhepeng Zhang","submitted_at":"2025-09-12T04:48:57Z","abstract_excerpt":"Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both $\\it{n}$- and $\\it{p}$-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths and lengths down to 25-30 nm. 'Anchored' contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edg"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2509.09964","kind":"arxiv","version":2},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2025-09-12T04:48:57Z","cross_cats_sorted":["cond-mat.mes-hall"],"title_canon_sha256":"262d436fdeaeccc51ba9610ad3abece3c565a7dee8361ce4cfc89eb9b051d00c","abstract_canon_sha256":"7bb206231a56e8dfe2c5c2c4e00c5d83b7a95cafd93fb63eaa2518a7a67878d6"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-06-04T01:08:31.796212Z","signature_b64":"TFNBujfdc4TNmkoFBexEDYkuPB/94FMba2EEN2RQCyEzu2gIJaPT48oyPJbgr8OEn+6vhHZ3ZU6y5MWaOCFACg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"d764cf76d6a16925f8cbe0e00431238ddfec45e7ce0b0d75b6412176d457729e","last_reissued_at":"2026-06-04T01:08:31.795203Z","signature_status":"signed_v1","first_computed_at":"2026-06-04T01:08:31.795203Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Andrew J. Mannix, Andrey Krayev, Anh Tuan Hoang, Anton E. O. Persson, \\'Ashildur Fri{\\dh}riksd\\'ottir, Eric Pop, Haotian Su, Jerry A. Yang, Kathryn Neilson, Lauren Hoang, Paul C. McIntyre, Shan X. Wang, Tara Pe\\~na, Young Suh Song, Yuan-Mau Lee, Zhepeng Zhang","submitted_at":"2025-09-12T04:48:57Z","abstract_excerpt":"Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both $\\it{n}$- and $\\it{p}$-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths and lengths down to 25-30 nm. 'Anchored' contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edg"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2509.09964","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2509.09964/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2509.09964","created_at":"2026-06-04T01:08:31.795348+00:00"},{"alias_kind":"arxiv_version","alias_value":"2509.09964v2","created_at":"2026-06-04T01:08:31.795348+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2509.09964","created_at":"2026-06-04T01:08:31.795348+00:00"},{"alias_kind":"pith_short_12","alias_value":"25SM65WWUFUS","created_at":"2026-06-04T01:08:31.795348+00:00"},{"alias_kind":"pith_short_16","alias_value":"25SM65WWUFUSL6GL","created_at":"2026-06-04T01:08:31.795348+00:00"},{"alias_kind":"pith_short_8","alias_value":"25SM65WW","created_at":"2026-06-04T01:08:31.795348+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX","json":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX.json","graph_json":"https://pith.science/api/pith-number/25SM65WWUFUSL6GL4DQAIMJDRX/graph.json","events_json":"https://pith.science/api/pith-number/25SM65WWUFUSL6GL4DQAIMJDRX/events.json","paper":"https://pith.science/paper/25SM65WW"},"agent_actions":{"view_html":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX","download_json":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX.json","view_paper":"https://pith.science/paper/25SM65WW","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2509.09964&json=true","fetch_graph":"https://pith.science/api/pith-number/25SM65WWUFUSL6GL4DQAIMJDRX/graph.json","fetch_events":"https://pith.science/api/pith-number/25SM65WWUFUSL6GL4DQAIMJDRX/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX/action/timestamp_anchor","attest_storage":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX/action/storage_attestation","attest_author":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX/action/author_attestation","sign_citation":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX/action/citation_signature","submit_replication":"https://pith.science/pith/25SM65WWUFUSL6GL4DQAIMJDRX/action/replication_record"}},"created_at":"2026-06-04T01:08:31.795348+00:00","updated_at":"2026-06-04T01:08:31.795348+00:00"}