{"schema":"https://pith.science/schemas/pith-integrity/v1.json","pith_number":"2607.07273","arxiv_id":"2607.07273","integrity":{"available":true,"endpoint":"/pith/2607.07273/integrity.json","summary":{"critical":1,"advisory":1,"informational":0,"by_detector":{"doi_compliance":{"total":2,"critical":1,"advisory":1,"informational":0}}},"clean":false,"detectors_run":[{"name":"doi_title_agreement","version":"1.0.0","status":"completed","ran_at":"2026-07-20T23:35:22.124338Z","findings_count":0},{"name":"ai_meta_artifact","version":"1.0.0","status":"completed","ran_at":"2026-07-16T08:59:42.994565Z","findings_count":0},{"name":"doi_compliance","version":"1.0.0","status":"completed","ran_at":"2026-07-15T16:26:25.610096Z","findings_count":2},{"name":"claim_evidence","version":"1.0.0","status":"completed","ran_at":"2026-07-15T14:44:42.366337Z","findings_count":0},{"name":"citation_quote_validity","version":"0.1.0","status":"completed","ran_at":"2026-07-09T17:56:57.192552Z","findings_count":0},{"name":"cited_work_retraction","version":"1.0.0","status":"completed","ran_at":"2026-07-09T14:18:30.232292Z","findings_count":0}],"findings":[{"detector":"doi_compliance","finding_type":"recoverable_identifier","severity":"advisory","verdict_class":"incontrovertible","note":"DOI in the printed bibliography is fragmented by whitespace or line breaks. A longer candidate (10.1016/S1452-3981(23) was visible in the surrounding text but could not be confirmed against doi.org as printed.","detected_doi":"10.1016/S1452-3981(23","detected_arxiv_id":null,"ref_index":7,"audited_at":"2026-07-09T15:54:02.436468Z"},{"detector":"doi_compliance","finding_type":"unresolvable_identifier","severity":"critical","verdict_class":"cross_source","note":"Identifier '10.1016/j.apmt.2020.10085' is syntactically valid but the DOI registry (doi.org) returned 404, and Crossref / OpenAlex / internal corpus also have no record. The cited work could not be located through any authoritative source.","detected_doi":"10.1016/j.apmt.2020.10085","detected_arxiv_id":null,"ref_index":2,"audited_at":"2026-07-09T15:54:02.436468Z"}],"snapshot_sha256":"f01cdc74b38ee8f6e0ad6d9f06d0f19a2123a204834ccf8e5fc57e81a405fdc9"},"events":[{"event_id":9746,"event_type":"pith.integrity.v1","payload_sha256":"05e433e6c2470a2e17bf102de70d088c623830cf407e88af36df29ddd1559ad5","signature_b64":"42ZqJASphR8nP2fJjLYSROrcTuC1WfzoiyEn8r8dr0WTAcZrPp/l9tmV+UGFZWMXJF1ug+8RaOr3OpmndEQKAQ==","signing_key_id":"pith-v1-2026-05","created_at":"2026-07-09T15:57:53.412649+00:00","payload":{"note":"DOI in the printed bibliography is fragmented by whitespace or line breaks. A longer candidate (10.1016/S1452-3981(23) was visible in the surrounding text but could not be confirmed against doi.org as printed.","snippet":"S. H. Abud, Z. Hassan, F. Yam, Enhancement of Structural and Op- tical Properties of Porous In0.27Ga0.73N Thin Film Synthesized Using Electrochemical Etching Technique, International Journal of Electro- chemical Science 7 (10) (2012) 10038–","arxiv_id":"2607.07273","detector":"doi_compliance","evidence":{"ref_index":7,"verdict_class":"incontrovertible","resolved_title":null,"printed_excerpt":"S. H. Abud, Z. Hassan, F. Yam, Enhancement of Structural and Op- tical Properties of Porous In0.27Ga0.73N Thin Film Synthesized Using Electrochemical Etching Technique, International Journal of Electro- chemical Science 7 (10) (2012) 10038–","reconstructed_doi":"10.1016/S1452-3981(23"},"severity":"advisory","ref_index":7,"audited_at":"2026-07-09T15:54:02.436468Z","event_type":"pith.integrity.v1","detected_doi":"10.1016/S1452-3981(23","detector_url":"https://pith.science/pith-integrity-protocol#doi_compliance","external_url":null,"finding_type":"recoverable_identifier","evidence_hash":"5577eaeca12713d6c451c26818fc35ebd109f1173ca5a1936ca348d785fd9a34","paper_version":1,"verdict_class":"incontrovertible","resolved_title":null,"detector_version":"1.0.0","detected_arxiv_id":null}},{"event_id":9745,"event_type":"pith.integrity.v1","payload_sha256":"24d1065f787cab9e31e7f839e04bf1a6ed31151fa8a8c3f20fe5e430988ad7c0","signature_b64":"cmJw4a1i5o/r40f1niAiKQ/NEXpWrztZDRunv/M3YLWG/TRrY+nxmuFDttXQsgOxmrGz2idBd1rHr8x6q9dgAg==","signing_key_id":"pith-v1-2026-05","created_at":"2026-07-09T15:57:53.411177+00:00","payload":{"note":"Identifier '10.1016/j.apmt.2020.10085' is syntactically valid but the DOI registry (doi.org) returned 404, and Crossref / OpenAlex / internal corpus also have no record. The cited work could not be located through any authoritative source.","snippet":"Y. Calahorra, B. Spiridon, A. Wineman, T. Busolo, P. Griffin, P. K. Szewczyk, T. Zhu, Q. Jing, R. Oliver, S. Kar-Narayan, Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity, Applied Ma","arxiv_id":"2607.07273","detector":"doi_compliance","evidence":{"doi":"10.1016/j.apmt.2020.10085","arxiv_id":null,"ref_index":2,"raw_excerpt":"Y. Calahorra, B. Spiridon, A. Wineman, T. Busolo, P. Griffin, P. K. Szewczyk, T. Zhu, Q. Jing, R. Oliver, S. Kar-Narayan, Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity, Applied Materials Today 21 (2020) 100858. doi:doi.org/10.1016/j.apmt.2020.10085","verdict_class":"cross_source","checked_sources":["crossref_by_doi","openalex_by_doi","doi_org_head"]},"severity":"critical","ref_index":2,"audited_at":"2026-07-09T15:54:02.436468Z","event_type":"pith.integrity.v1","detected_doi":"10.1016/j.apmt.2020.10085","detector_url":"https://pith.science/pith-integrity-protocol#doi_compliance","external_url":null,"finding_type":"unresolvable_identifier","evidence_hash":"97c1ccb99e9e159ba948063ed03fa3716d9a125c2a79c13174d31720533b9acb","paper_version":1,"verdict_class":"cross_source","resolved_title":null,"detector_version":"1.0.0","detected_arxiv_id":null}}],"endpoint_self":"/pith/2607.07273/integrity.json","protocol_url":"https://pith.science/pith-integrity-protocol"}