{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2025:2GGEXKIWMBHA7HQNZQ75HHKLPN","short_pith_number":"pith:2GGEXKIW","schema_version":"1.0","canonical_sha256":"d18c4ba916604e0f9e0dcc3fd39d4b7b5a7b758e1c16c6cabc81affc91dedc8f","source":{"kind":"arxiv","id":"2501.13634","version":1},"attestation_state":"computed","paper":{"title":"Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Alessandro Paghi, Fabio Beltram, Francesco Giazotto, Gaurav Shukla, Giulio Senesi, Katarzyna Skibinska, Lucia Sorba, Stefan Heun","submitted_at":"2025-01-23T13:08:46Z","abstract_excerpt":"Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1-xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, whic"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2501.13634","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2025-01-23T13:08:46Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"3855497cd4b424e2afa3fbbdacf2d075c33e41066afbbd4d1faf3f128e191bfd","abstract_canon_sha256":"936c6867809444b64082c4fa122954d1734557d1eca4aff7f3cc255f298c6d6b"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T10:04:31.830030Z","signature_b64":"9o/To5VzJ+KRL5stJm7gJCwAzOjIotNgtdiSB3h9HecjDmvPFFVIS+jezeJMPiqP2Oym4Y5a8oSAzXd/iY3tCA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"d18c4ba916604e0f9e0dcc3fd39d4b7b5a7b758e1c16c6cabc81affc91dedc8f","last_reissued_at":"2026-07-05T10:04:31.829560Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T10:04:31.829560Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Alessandro Paghi, Fabio Beltram, Francesco Giazotto, Gaurav Shukla, Giulio Senesi, Katarzyna Skibinska, Lucia Sorba, Stefan Heun","submitted_at":"2025-01-23T13:08:46Z","abstract_excerpt":"Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1-xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, whic"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2501.13634","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2501.13634/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2501.13634","created_at":"2026-07-05T10:04:31.829620+00:00"},{"alias_kind":"arxiv_version","alias_value":"2501.13634v1","created_at":"2026-07-05T10:04:31.829620+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2501.13634","created_at":"2026-07-05T10:04:31.829620+00:00"},{"alias_kind":"pith_short_12","alias_value":"2GGEXKIWMBHA","created_at":"2026-07-05T10:04:31.829620+00:00"},{"alias_kind":"pith_short_16","alias_value":"2GGEXKIWMBHA7HQN","created_at":"2026-07-05T10:04:31.829620+00:00"},{"alias_kind":"pith_short_8","alias_value":"2GGEXKIW","created_at":"2026-07-05T10:04:31.829620+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN","json":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN.json","graph_json":"https://pith.science/api/pith-number/2GGEXKIWMBHA7HQNZQ75HHKLPN/graph.json","events_json":"https://pith.science/api/pith-number/2GGEXKIWMBHA7HQNZQ75HHKLPN/events.json","paper":"https://pith.science/paper/2GGEXKIW"},"agent_actions":{"view_html":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN","download_json":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN.json","view_paper":"https://pith.science/paper/2GGEXKIW","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2501.13634&json=true","fetch_graph":"https://pith.science/api/pith-number/2GGEXKIWMBHA7HQNZQ75HHKLPN/graph.json","fetch_events":"https://pith.science/api/pith-number/2GGEXKIWMBHA7HQNZQ75HHKLPN/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN/action/timestamp_anchor","attest_storage":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN/action/storage_attestation","attest_author":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN/action/author_attestation","sign_citation":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN/action/citation_signature","submit_replication":"https://pith.science/pith/2GGEXKIWMBHA7HQNZQ75HHKLPN/action/replication_record"}},"created_at":"2026-07-05T10:04:31.829620+00:00","updated_at":"2026-07-05T10:04:31.829620+00:00"}