{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2023:36YDFNECEOCPHWSBF7E4MNNYBH","short_pith_number":"pith:36YDFNEC","schema_version":"1.0","canonical_sha256":"dfb032b4822384f3da412fc9c635b809e909149320d719f4676aefd9e71559b6","source":{"kind":"arxiv","id":"2302.14209","version":1},"attestation_state":"computed","paper":{"title":"FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"A. Hickman, A. Lal, C. Savant, D. Jena, H. G. Xing, H. Lee, J. Casamento, J. C. M. Hwang, J. Encomendero, K. Nomoto, L. Li, T. Maeda, T. S. Nguyen, V. Gund","submitted_at":"2023-02-28T00:08:30Z","abstract_excerpt":"We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The Ferro"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2302.14209","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"physics.app-ph","submitted_at":"2023-02-28T00:08:30Z","cross_cats_sorted":["cond-mat.mtrl-sci"],"title_canon_sha256":"83fb40113a24ab205372a18320b5d6d92c8959ce32abb2a648cfa30e539074f8","abstract_canon_sha256":"8774d055ced7253335a6126aadd53af1619c6ce137ce8fdeadd2e84d7797a275"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T05:46:42.059717Z","signature_b64":"Kf0PkNbUjZdeavRyvT7/7W4hOwYmAk9lYofPc2TwGx5BI1Wb4g+KOOU0w6i8I26iCskPYcEu779RWfUCaV8DDw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"dfb032b4822384f3da412fc9c635b809e909149320d719f4676aefd9e71559b6","last_reissued_at":"2026-07-05T05:46:42.059282Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T05:46:42.059282Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"physics.app-ph","authors_text":"A. Hickman, A. Lal, C. Savant, D. Jena, H. G. Xing, H. Lee, J. Casamento, J. C. M. Hwang, J. Encomendero, K. Nomoto, L. Li, T. Maeda, T. S. Nguyen, V. Gund","submitted_at":"2023-02-28T00:08:30Z","abstract_excerpt":"We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The Ferro"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2302.14209","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2302.14209/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2302.14209","created_at":"2026-07-05T05:46:42.059335+00:00"},{"alias_kind":"arxiv_version","alias_value":"2302.14209v1","created_at":"2026-07-05T05:46:42.059335+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2302.14209","created_at":"2026-07-05T05:46:42.059335+00:00"},{"alias_kind":"pith_short_12","alias_value":"36YDFNECEOCP","created_at":"2026-07-05T05:46:42.059335+00:00"},{"alias_kind":"pith_short_16","alias_value":"36YDFNECEOCPHWSB","created_at":"2026-07-05T05:46:42.059335+00:00"},{"alias_kind":"pith_short_8","alias_value":"36YDFNEC","created_at":"2026-07-05T05:46:42.059335+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH","json":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH.json","graph_json":"https://pith.science/api/pith-number/36YDFNECEOCPHWSBF7E4MNNYBH/graph.json","events_json":"https://pith.science/api/pith-number/36YDFNECEOCPHWSBF7E4MNNYBH/events.json","paper":"https://pith.science/paper/36YDFNEC"},"agent_actions":{"view_html":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH","download_json":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH.json","view_paper":"https://pith.science/paper/36YDFNEC","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2302.14209&json=true","fetch_graph":"https://pith.science/api/pith-number/36YDFNECEOCPHWSBF7E4MNNYBH/graph.json","fetch_events":"https://pith.science/api/pith-number/36YDFNECEOCPHWSBF7E4MNNYBH/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH/action/timestamp_anchor","attest_storage":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH/action/storage_attestation","attest_author":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH/action/author_attestation","sign_citation":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH/action/citation_signature","submit_replication":"https://pith.science/pith/36YDFNECEOCPHWSBF7E4MNNYBH/action/replication_record"}},"created_at":"2026-07-05T05:46:42.059335+00:00","updated_at":"2026-07-05T05:46:42.059335+00:00"}