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For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\\rm it}$) near the conduction band edge ($E_{\\rm C}$) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl$_3$)-annealed samples, in contrast, $D_{\\rm it}$ at $E_{\\rm C}-0.2$ eV increased from $1.3\\times10^{10}$ to $2.2\\times10^{12}$ cm$^{-2}$eV$^{-1}$ by the vacuum annealing, and the channel mobility of MOS field effect transistors "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1904.05006","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2019-04-10T05:10:41Z","cross_cats_sorted":[],"title_canon_sha256":"f3a53e9c47d1bbd6d7aac2e3e72730dd96a228886ff33611d63100e24b9f8b02","abstract_canon_sha256":"6ba663aa90cdf346ae05adacde3c81e21cec9dd5f26cf1d06d5f7b60312ac445"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:39:30.278639Z","signature_b64":"gM6YPVZPDtqpb8bf+G+Hfy2Ud5FZL/uyA1LrZQ0WrS4Gk2D4g2FmtHLqWvCsIpE+kUJrEcicUy8kYstSLrw7Bg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"d88f882dec49ede790b60fe4ec0650830a7fd4c87d0e8bea4576e42773dac8b0","last_reissued_at":"2026-05-17T23:39:30.278086Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:39:30.278086Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Influence of vacuum annealing on interface properties of SiC (0001) MOS structures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto","submitted_at":"2019-04-10T05:10:41Z","abstract_excerpt":"We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. 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