{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2019:3USCYJE3S56SEZIK5NPLPLGBZM","short_pith_number":"pith:3USCYJE3","canonical_record":{"source":{"id":"1906.03092","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-06-07T13:41:06Z","cross_cats_sorted":[],"title_canon_sha256":"2bc38c06dcfd7371059c445c1347f24fd0fdb90d4eda5178a19af7ee17938a26","abstract_canon_sha256":"6e62cc75e2a6347ffce51bba87647496627bda4ce324a4641ed26aa71af685c1"},"schema_version":"1.0"},"canonical_sha256":"dd242c249b977d22650aeb5eb7acc1cb17ed736c885857275d5452b8e3da3591","source":{"kind":"arxiv","id":"1906.03092","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1906.03092","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"arxiv_version","alias_value":"1906.03092v1","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1906.03092","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"pith_short_12","alias_value":"3USCYJE3S56S","created_at":"2026-05-18T12:33:10Z"},{"alias_kind":"pith_short_16","alias_value":"3USCYJE3S56SEZIK","created_at":"2026-05-18T12:33:10Z"},{"alias_kind":"pith_short_8","alias_value":"3USCYJE3","created_at":"2026-05-18T12:33:10Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2019:3USCYJE3S56SEZIK5NPLPLGBZM","target":"record","payload":{"canonical_record":{"source":{"id":"1906.03092","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-06-07T13:41:06Z","cross_cats_sorted":[],"title_canon_sha256":"2bc38c06dcfd7371059c445c1347f24fd0fdb90d4eda5178a19af7ee17938a26","abstract_canon_sha256":"6e62cc75e2a6347ffce51bba87647496627bda4ce324a4641ed26aa71af685c1"},"schema_version":"1.0"},"canonical_sha256":"dd242c249b977d22650aeb5eb7acc1cb17ed736c885857275d5452b8e3da3591","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-17T23:43:55.024083Z","signature_b64":"g9jlJ7KmYpN24bGd99aH23KQLAdrd5KJRf3sBN87y93KG4c75rp7mM/I49A8UH26DlZ2XZiYVDkRnrkyt6+LBA==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"dd242c249b977d22650aeb5eb7acc1cb17ed736c885857275d5452b8e3da3591","last_reissued_at":"2026-05-17T23:43:55.023445Z","signature_status":"signed_v1","first_computed_at":"2026-05-17T23:43:55.023445Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1906.03092","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:43:55Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"udoKdexsbhZ4IXnwdIOpP+JLz/C1Mms4CIS4Fc6Md55YbLdcx/NMO/VG9xs3B96BkTfz0cZT6BXiztDq0yjrAg==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-11T21:33:41.320939Z"},"content_sha256":"e18e2c99d950758db21b09a924baaf4660657eb030d62165a7b34edd4d6489c0","schema_version":"1.0","event_id":"sha256:e18e2c99d950758db21b09a924baaf4660657eb030d62165a7b34edd4d6489c0"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2019:3USCYJE3S56SEZIK5NPLPLGBZM","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"A. Alberti, E. Smecca, F. Roccaforte, M. Saggio, M. Vivona, P. Fiorenza, S. Di Franco, S. Sanzaro","submitted_at":"2019-06-07T13:41:06Z","abstract_excerpt":"In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that is mitigated after the rapid thermal annealing (RTA). The RTA improved also the permittivity (up to 6{\\epsilon}0), although the negative fixed charge remains in the order of 1012cm-2. However, the temperature dependent electrical investigation of the MOS capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1906.03092","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-17T23:43:55Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"kDkFEwhGnCy/qDPuYnsUVwAUVmsdnGIXZsS+KfjAxvK7druaOXyBhOEcax1du722nLcgR4Ol3uptvD6EoT7ZDg==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-11T21:33:41.321577Z"},"content_sha256":"b49702a555c4b74c1da3e485fad4398c536369ae38068905ecf86fba6f8889e6","schema_version":"1.0","event_id":"sha256:b49702a555c4b74c1da3e485fad4398c536369ae38068905ecf86fba6f8889e6"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/3USCYJE3S56SEZIK5NPLPLGBZM/bundle.json","state_url":"https://pith.science/pith/3USCYJE3S56SEZIK5NPLPLGBZM/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/3USCYJE3S56SEZIK5NPLPLGBZM/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-06-11T21:33:41Z","links":{"resolver":"https://pith.science/pith/3USCYJE3S56SEZIK5NPLPLGBZM","bundle":"https://pith.science/pith/3USCYJE3S56SEZIK5NPLPLGBZM/bundle.json","state":"https://pith.science/pith/3USCYJE3S56SEZIK5NPLPLGBZM/state.json","well_known_bundle":"https://pith.science/.well-known/pith/3USCYJE3S56SEZIK5NPLPLGBZM/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2019:3USCYJE3S56SEZIK5NPLPLGBZM","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"6e62cc75e2a6347ffce51bba87647496627bda4ce324a4641ed26aa71af685c1","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-06-07T13:41:06Z","title_canon_sha256":"2bc38c06dcfd7371059c445c1347f24fd0fdb90d4eda5178a19af7ee17938a26"},"schema_version":"1.0","source":{"id":"1906.03092","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1906.03092","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"arxiv_version","alias_value":"1906.03092v1","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1906.03092","created_at":"2026-05-17T23:43:55Z"},{"alias_kind":"pith_short_12","alias_value":"3USCYJE3S56S","created_at":"2026-05-18T12:33:10Z"},{"alias_kind":"pith_short_16","alias_value":"3USCYJE3S56SEZIK","created_at":"2026-05-18T12:33:10Z"},{"alias_kind":"pith_short_8","alias_value":"3USCYJE3","created_at":"2026-05-18T12:33:10Z"}],"graph_snapshots":[{"event_id":"sha256:b49702a555c4b74c1da3e485fad4398c536369ae38068905ecf86fba6f8889e6","target":"graph","created_at":"2026-05-17T23:43:55Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that is mitigated after the rapid thermal annealing (RTA). The RTA improved also the permittivity (up to 6{\\epsilon}0), although the negative fixed charge remains in the order of 1012cm-2. However, the temperature dependent electrical investigation of the MOS capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies ","authors_text":"A. Alberti, E. Smecca, F. Roccaforte, M. Saggio, M. Vivona, P. Fiorenza, S. Di Franco, S. Sanzaro","cross_cats":[],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-06-07T13:41:06Z","title":"Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1906.03092","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:e18e2c99d950758db21b09a924baaf4660657eb030d62165a7b34edd4d6489c0","target":"record","created_at":"2026-05-17T23:43:55Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"6e62cc75e2a6347ffce51bba87647496627bda4ce324a4641ed26aa71af685c1","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.app-ph","submitted_at":"2019-06-07T13:41:06Z","title_canon_sha256":"2bc38c06dcfd7371059c445c1347f24fd0fdb90d4eda5178a19af7ee17938a26"},"schema_version":"1.0","source":{"id":"1906.03092","kind":"arxiv","version":1}},"canonical_sha256":"dd242c249b977d22650aeb5eb7acc1cb17ed736c885857275d5452b8e3da3591","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"dd242c249b977d22650aeb5eb7acc1cb17ed736c885857275d5452b8e3da3591","first_computed_at":"2026-05-17T23:43:55.023445Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-17T23:43:55.023445Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"g9jlJ7KmYpN24bGd99aH23KQLAdrd5KJRf3sBN87y93KG4c75rp7mM/I49A8UH26DlZ2XZiYVDkRnrkyt6+LBA==","signature_status":"signed_v1","signed_at":"2026-05-17T23:43:55.024083Z","signed_message":"canonical_sha256_bytes"},"source_id":"1906.03092","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:e18e2c99d950758db21b09a924baaf4660657eb030d62165a7b34edd4d6489c0","sha256:b49702a555c4b74c1da3e485fad4398c536369ae38068905ecf86fba6f8889e6"],"state_sha256":"b36df9e5857fc8c73d133c85ab7583ef79ead680e6460ce21b8268d9cf90ef95"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"5qEcj+Cq//4wOczuw4P0F2bDmL1vhNuQiRJmLtpZmVIFIqDQNrKXTo+TK8IWjorKIDNnVTtTyZKfvfV/TWRNCw==","signed_message":"bundle_sha256_bytes","signed_at":"2026-06-11T21:33:41.325564Z","bundle_sha256":"c1c57032a820e85def740d2c8dc89e997a48b623bbabb0c402451c0f632a384d"}}