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Although the charge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$ substitution, the electronic transport properties are significantly improved in a broad temperature range from 100 K to 800 K. In particular, the electrical resistivity decreases by two times, while the Seebeck coefficient drops from 323 ${\\mu}$V K$^{-1}$ to 238 ${\\mu}$V K$^{-1}$ at 800 K. 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