{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2021:4IUZPCPKN72RCSZDIGASPE4ICS","short_pith_number":"pith:4IUZPCPK","schema_version":"1.0","canonical_sha256":"e2299789ea6ff5114b23418127938814b70c4417951544f2171e0941a456b797","source":{"kind":"arxiv","id":"2105.01721","version":1},"attestation_state":"computed","paper":{"title":"First Demonstration of Robust Tri-Gate \\b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 {\\deg}C","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Hagyoul Bae, Jinhyun Noh, Mengwei Si, Peide D. Ye, Shriram Ramanathan, Tae Joon Park, Wonil Chung","submitted_at":"2021-05-04T19:38:56Z","abstract_excerpt":"Nano-membrane tri-gate beta-gallium oxide (\\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with a 50 nm fin structure. For high-quality interface between \\b{eta}-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain curren"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2105.01721","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","primary_cat":"physics.app-ph","submitted_at":"2021-05-04T19:38:56Z","cross_cats_sorted":[],"title_canon_sha256":"b9629a11e576b40003d15bc6d5625410469d475601bb6a3486f8e81c05723dbe","abstract_canon_sha256":"1c57ab242322a91e0358e5e8a129c21fc93b4ee3a3c4edfd974929718e614581"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-07-05T03:45:31.664270Z","signature_b64":"gItU63Srmjf4WTlkax5jLpn5lByDCKRz6aCMDzgYSfje/+4/5LoprR8HBHeCyQutWsrDsN2flOlFDDQ0fSrGBg==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"e2299789ea6ff5114b23418127938814b70c4417951544f2171e0941a456b797","last_reissued_at":"2026-07-05T03:45:31.663777Z","signature_status":"signed_v1","first_computed_at":"2026-07-05T03:45:31.663777Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"First Demonstration of Robust Tri-Gate \\b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 {\\deg}C","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Hagyoul Bae, Jinhyun Noh, Mengwei Si, Peide D. Ye, Shriram Ramanathan, Tae Joon Park, Wonil Chung","submitted_at":"2021-05-04T19:38:56Z","abstract_excerpt":"Nano-membrane tri-gate beta-gallium oxide (\\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with a 50 nm fin structure. For high-quality interface between \\b{eta}-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain curren"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2105.01721","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2105.01721/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2105.01721","created_at":"2026-07-05T03:45:31.663838+00:00"},{"alias_kind":"arxiv_version","alias_value":"2105.01721v1","created_at":"2026-07-05T03:45:31.663838+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2105.01721","created_at":"2026-07-05T03:45:31.663838+00:00"},{"alias_kind":"pith_short_12","alias_value":"4IUZPCPKN72R","created_at":"2026-07-05T03:45:31.663838+00:00"},{"alias_kind":"pith_short_16","alias_value":"4IUZPCPKN72RCSZD","created_at":"2026-07-05T03:45:31.663838+00:00"},{"alias_kind":"pith_short_8","alias_value":"4IUZPCPK","created_at":"2026-07-05T03:45:31.663838+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS","json":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS.json","graph_json":"https://pith.science/api/pith-number/4IUZPCPKN72RCSZDIGASPE4ICS/graph.json","events_json":"https://pith.science/api/pith-number/4IUZPCPKN72RCSZDIGASPE4ICS/events.json","paper":"https://pith.science/paper/4IUZPCPK"},"agent_actions":{"view_html":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS","download_json":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS.json","view_paper":"https://pith.science/paper/4IUZPCPK","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2105.01721&json=true","fetch_graph":"https://pith.science/api/pith-number/4IUZPCPKN72RCSZDIGASPE4ICS/graph.json","fetch_events":"https://pith.science/api/pith-number/4IUZPCPKN72RCSZDIGASPE4ICS/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS/action/timestamp_anchor","attest_storage":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS/action/storage_attestation","attest_author":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS/action/author_attestation","sign_citation":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS/action/citation_signature","submit_replication":"https://pith.science/pith/4IUZPCPKN72RCSZDIGASPE4ICS/action/replication_record"}},"created_at":"2026-07-05T03:45:31.663838+00:00","updated_at":"2026-07-05T03:45:31.663838+00:00"}