{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2015:4OQSEQBYGXXGCZZSHIOJWTXYOR","short_pith_number":"pith:4OQSEQBY","schema_version":"1.0","canonical_sha256":"e3a122403835ee6167323a1c9b4ef87467903288960266cba7025d3487ae4568","source":{"kind":"arxiv","id":"1511.04438","version":1},"attestation_state":"computed","paper":{"title":"Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.ins-det","authors_text":"Fatih Akyol, Sanyam Bajaj, Siddharth Rajan, Sriram Krishnamoorthy, Ting-Hsiang Hung","submitted_at":"2015-11-12T23:23:59Z","abstract_excerpt":"A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back H"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1511.04438","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"physics.ins-det","submitted_at":"2015-11-12T23:23:59Z","cross_cats_sorted":[],"title_canon_sha256":"fb94034a0ce6f10cb9ba95874f4d0fe3a58f27a7a5d71e843c982d3259cea055","abstract_canon_sha256":"542ca8c7d9cc598f73c5a1426c93bc5223f2b4a62bbee88d51c5f57c5b1dd61d"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T01:26:56.998734Z","signature_b64":"wqMvglPcpMqCwotpdkXFemS8U1EMiNPRTUY6AKE9mreXx8reFAYmsLDSU/Xs5NYfuP0lSZuCP80R24YIhOlrDw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"e3a122403835ee6167323a1c9b4ef87467903288960266cba7025d3487ae4568","last_reissued_at":"2026-05-18T01:26:56.998182Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T01:26:56.998182Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.ins-det","authors_text":"Fatih Akyol, Sanyam Bajaj, Siddharth Rajan, Sriram Krishnamoorthy, Ting-Hsiang Hung","submitted_at":"2015-11-12T23:23:59Z","abstract_excerpt":"A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back H"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1511.04438","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1511.04438","created_at":"2026-05-18T01:26:56.998288+00:00"},{"alias_kind":"arxiv_version","alias_value":"1511.04438v1","created_at":"2026-05-18T01:26:56.998288+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1511.04438","created_at":"2026-05-18T01:26:56.998288+00:00"},{"alias_kind":"pith_short_12","alias_value":"4OQSEQBYGXXG","created_at":"2026-05-18T12:29:05.191682+00:00"},{"alias_kind":"pith_short_16","alias_value":"4OQSEQBYGXXGCZZS","created_at":"2026-05-18T12:29:05.191682+00:00"},{"alias_kind":"pith_short_8","alias_value":"4OQSEQBY","created_at":"2026-05-18T12:29:05.191682+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR","json":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR.json","graph_json":"https://pith.science/api/pith-number/4OQSEQBYGXXGCZZSHIOJWTXYOR/graph.json","events_json":"https://pith.science/api/pith-number/4OQSEQBYGXXGCZZSHIOJWTXYOR/events.json","paper":"https://pith.science/paper/4OQSEQBY"},"agent_actions":{"view_html":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR","download_json":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR.json","view_paper":"https://pith.science/paper/4OQSEQBY","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1511.04438&json=true","fetch_graph":"https://pith.science/api/pith-number/4OQSEQBYGXXGCZZSHIOJWTXYOR/graph.json","fetch_events":"https://pith.science/api/pith-number/4OQSEQBYGXXGCZZSHIOJWTXYOR/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR/action/timestamp_anchor","attest_storage":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR/action/storage_attestation","attest_author":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR/action/author_attestation","sign_citation":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR/action/citation_signature","submit_replication":"https://pith.science/pith/4OQSEQBYGXXGCZZSHIOJWTXYOR/action/replication_record"}},"created_at":"2026-05-18T01:26:56.998288+00:00","updated_at":"2026-05-18T01:26:56.998288+00:00"}