{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2026:5WLS2SM3E4SQJ5MVF6FY6LAFUL","short_pith_number":"pith:5WLS2SM3","schema_version":"1.0","canonical_sha256":"ed972d499b272504f5952f8b8f2c05a2e1b899bf41b355b38f9f865cf06ae3b1","source":{"kind":"arxiv","id":"2606.07973","version":1},"attestation_state":"computed","paper":{"title":"Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Dongyang Han, Hengrui Zhang, Jichun Ye, Li Ji, Ningtao Liu, Ning Xia, Shen Hu, Shujun Zhu, Wenrui Zhang, Zhihao Yan","submitted_at":"2026-06-06T04:17:23Z","abstract_excerpt":"This study demonstrates a wafer-scale growth of a 2-inch Si-doped $\\beta$-Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral $\\beta$-Ga2O3 MOSFET arrays. The 2-inch homoepitaxial $\\beta$-Ga2O3 (100) film grown by MOCVD exhibit excellent crystalline uniformity with an average rocking curve FWHM of ~27.0 arcsec and a low surface roughness less than 1 nm, alongside a uniform net doping concentration on the value of 4.60 $\\times$ 1E17 cm-3. The fabricated MOSFETs deliver a threshold voltage of -31.75 V, a drain-current on/off ratio over 1E9, a specific on-resistance o"},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"2606.07973","kind":"arxiv","version":1},"metadata":{"license":"http://creativecommons.org/licenses/by/4.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2026-06-06T04:17:23Z","cross_cats_sorted":[],"title_canon_sha256":"67d92a4fd2505a9d9033986963d20479dedfc225bfceea5835ce93f36dd94273","abstract_canon_sha256":"0daa58bb34ca3f6b4e740dc091d72b58bb9af48d822c5d0917c012f63f92a951"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-06-09T01:04:56.900351Z","signature_b64":"w5VCCPj4JSiCr0BrwKinLT9uwa7Dy//GbsjuWdNf+MG+VOONwYDxAhoOEarAxBWZLu5p89x+G2lSywe3UHR1Ag==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"ed972d499b272504f5952f8b8f2c05a2e1b899bf41b355b38f9f865cf06ae3b1","last_reissued_at":"2026-06-09T01:04:56.899931Z","signature_status":"signed_v1","first_computed_at":"2026-06-09T01:04:56.899931Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages","license":"http://creativecommons.org/licenses/by/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Dongyang Han, Hengrui Zhang, Jichun Ye, Li Ji, Ningtao Liu, Ning Xia, Shen Hu, Shujun Zhu, Wenrui Zhang, Zhihao Yan","submitted_at":"2026-06-06T04:17:23Z","abstract_excerpt":"This study demonstrates a wafer-scale growth of a 2-inch Si-doped $\\beta$-Ga2O3 (100) epitaxial wafer and the realization of uniform, high-voltage lateral $\\beta$-Ga2O3 MOSFET arrays. The 2-inch homoepitaxial $\\beta$-Ga2O3 (100) film grown by MOCVD exhibit excellent crystalline uniformity with an average rocking curve FWHM of ~27.0 arcsec and a low surface roughness less than 1 nm, alongside a uniform net doping concentration on the value of 4.60 $\\times$ 1E17 cm-3. The fabricated MOSFETs deliver a threshold voltage of -31.75 V, a drain-current on/off ratio over 1E9, a specific on-resistance o"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2606.07973","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"integrity":{"clean":true,"summary":{"advisory":0,"critical":0,"by_detector":{},"informational":0},"endpoint":"/pith/2606.07973/integrity.json","findings":[],"available":true,"detectors_run":[],"snapshot_sha256":"c28c3603d3b5d939e8dc4c7e95fa8dfce3d595e45f758748cecf8e644a296938"},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"2606.07973","created_at":"2026-06-09T01:04:56.899995+00:00"},{"alias_kind":"arxiv_version","alias_value":"2606.07973v1","created_at":"2026-06-09T01:04:56.899995+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.2606.07973","created_at":"2026-06-09T01:04:56.899995+00:00"},{"alias_kind":"pith_short_12","alias_value":"5WLS2SM3E4SQ","created_at":"2026-06-09T01:04:56.899995+00:00"},{"alias_kind":"pith_short_16","alias_value":"5WLS2SM3E4SQJ5MV","created_at":"2026-06-09T01:04:56.899995+00:00"},{"alias_kind":"pith_short_8","alias_value":"5WLS2SM3","created_at":"2026-06-09T01:04:56.899995+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL","json":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL.json","graph_json":"https://pith.science/api/pith-number/5WLS2SM3E4SQJ5MVF6FY6LAFUL/graph.json","events_json":"https://pith.science/api/pith-number/5WLS2SM3E4SQJ5MVF6FY6LAFUL/events.json","paper":"https://pith.science/paper/5WLS2SM3"},"agent_actions":{"view_html":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL","download_json":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL.json","view_paper":"https://pith.science/paper/5WLS2SM3","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=2606.07973&json=true","fetch_graph":"https://pith.science/api/pith-number/5WLS2SM3E4SQJ5MVF6FY6LAFUL/graph.json","fetch_events":"https://pith.science/api/pith-number/5WLS2SM3E4SQJ5MVF6FY6LAFUL/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL/action/timestamp_anchor","attest_storage":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL/action/storage_attestation","attest_author":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL/action/author_attestation","sign_citation":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL/action/citation_signature","submit_replication":"https://pith.science/pith/5WLS2SM3E4SQJ5MVF6FY6LAFUL/action/replication_record"}},"created_at":"2026-06-09T01:04:56.899995+00:00","updated_at":"2026-06-09T01:04:56.899995+00:00"}