{"record_type":"pith_number_record","schema_url":"https://pith.science/schemas/pith-number/v1.json","pith_number":"pith:2015:6MS2D56RH7JCCZM6EFMUVEARLL","short_pith_number":"pith:6MS2D56R","schema_version":"1.0","canonical_sha256":"f325a1f7d13fd221659e21594a90115afacc303bd026bf6ec3aa817fe66e3567","source":{"kind":"arxiv","id":"1501.04139","version":1},"attestation_state":"computed","paper":{"title":"Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Cui-Zu Chang, Jing Wang, Jinsong Zhang, Kang Li, Ke He, Li-Li Wang, Minghua Guo, Qi-Kun Xue, Xiao Feng, Xi Chen, Xu-Cun Ma, Yang Feng, Yayu Wang, Zuocheng Zhang","submitted_at":"2015-01-17T00:54:38Z","abstract_excerpt":"It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than "},"verification_status":{"content_addressed":true,"pith_receipt":true,"author_attested":false,"weak_author_claims":0,"strong_author_claims":0,"externally_anchored":false,"storage_verified":false,"citation_signatures":0,"replication_records":0,"graph_snapshot":true,"references_resolved":false,"formal_links_present":false},"canonical_record":{"source":{"id":"1501.04139","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mtrl-sci","submitted_at":"2015-01-17T00:54:38Z","cross_cats_sorted":["cond-mat.mes-hall"],"title_canon_sha256":"18ee70e165fefa560acb5cbc2d5f095fb89b77013781e965a4755678ef5edf23","abstract_canon_sha256":"90b5f7d566c9fd2fe3d86a73621bca1386d0ebd973dfd58bae36f93bb4da8a46"},"schema_version":"1.0"},"receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T02:26:10.244131Z","signature_b64":"COlDWpmkreGsnl8xex+Xt5/b9NXiFlEDE4uoxy1h1l/HC7GGs77C+gMosbmhcbFV84Z50lB/lSOKkzyoGn68Aw==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"f325a1f7d13fd221659e21594a90115afacc303bd026bf6ec3aa817fe66e3567","last_reissued_at":"2026-05-18T02:26:10.243542Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T02:26:10.243542Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"graph_snapshot":{"paper":{"title":"Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Cui-Zu Chang, Jing Wang, Jinsong Zhang, Kang Li, Ke He, Li-Li Wang, Minghua Guo, Qi-Kun Xue, Xiao Feng, Xi Chen, Xu-Cun Ma, Yang Feng, Yayu Wang, Zuocheng Zhang","submitted_at":"2015-01-17T00:54:38Z","abstract_excerpt":"It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1501.04139","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"aliases":[{"alias_kind":"arxiv","alias_value":"1501.04139","created_at":"2026-05-18T02:26:10.243611+00:00"},{"alias_kind":"arxiv_version","alias_value":"1501.04139v1","created_at":"2026-05-18T02:26:10.243611+00:00"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1501.04139","created_at":"2026-05-18T02:26:10.243611+00:00"},{"alias_kind":"pith_short_12","alias_value":"6MS2D56RH7JC","created_at":"2026-05-18T12:29:07.941421+00:00"},{"alias_kind":"pith_short_16","alias_value":"6MS2D56RH7JCCZM6","created_at":"2026-05-18T12:29:07.941421+00:00"},{"alias_kind":"pith_short_8","alias_value":"6MS2D56R","created_at":"2026-05-18T12:29:07.941421+00:00"}],"events":[],"event_summary":{},"paper_claims":[],"inbound_citations":{"count":0,"internal_anchor_count":0,"sample":[]},"formal_canon":{"evidence_count":0,"sample":[],"anchors":[]},"links":{"html":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL","json":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL.json","graph_json":"https://pith.science/api/pith-number/6MS2D56RH7JCCZM6EFMUVEARLL/graph.json","events_json":"https://pith.science/api/pith-number/6MS2D56RH7JCCZM6EFMUVEARLL/events.json","paper":"https://pith.science/paper/6MS2D56R"},"agent_actions":{"view_html":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL","download_json":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL.json","view_paper":"https://pith.science/paper/6MS2D56R","resolve_alias":"https://pith.science/api/pith-number/resolve?arxiv=1501.04139&json=true","fetch_graph":"https://pith.science/api/pith-number/6MS2D56RH7JCCZM6EFMUVEARLL/graph.json","fetch_events":"https://pith.science/api/pith-number/6MS2D56RH7JCCZM6EFMUVEARLL/events.json","actions":{"anchor_timestamp":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL/action/timestamp_anchor","attest_storage":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL/action/storage_attestation","attest_author":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL/action/author_attestation","sign_citation":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL/action/citation_signature","submit_replication":"https://pith.science/pith/6MS2D56RH7JCCZM6EFMUVEARLL/action/replication_record"}},"created_at":"2026-05-18T02:26:10.243611+00:00","updated_at":"2026-05-18T02:26:10.243611+00:00"}