{"bundle_type":"pith_open_graph_bundle","bundle_version":"1.0","pith_number":"pith:2011:6OEBSBL54WFKCUM6L6KP7UOTV2","short_pith_number":"pith:6OEBSBL5","canonical_record":{"source":{"id":"1109.2566","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-09-12T18:55:01Z","cross_cats_sorted":[],"title_canon_sha256":"f683c9afe54e7db8ff89cbb460b42525d60a5dd58878f25eece6639d23d06e0d","abstract_canon_sha256":"aae55f48709ae95d2f5c9e7d3f6c39ac4ec0a55a71aedeb51b378c2d3e370944"},"schema_version":"1.0"},"canonical_sha256":"f38819057de58aa1519e5f94ffd1d3aea73b4a97fad8acb596ce3ba1fd01fe88","source":{"kind":"arxiv","id":"1109.2566","version":1},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1109.2566","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"arxiv_version","alias_value":"1109.2566v1","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1109.2566","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"pith_short_12","alias_value":"6OEBSBL54WFK","created_at":"2026-05-18T12:26:22Z"},{"alias_kind":"pith_short_16","alias_value":"6OEBSBL54WFKCUM6","created_at":"2026-05-18T12:26:22Z"},{"alias_kind":"pith_short_8","alias_value":"6OEBSBL5","created_at":"2026-05-18T12:26:22Z"}],"events":[{"event_type":"record_created","subject_pith_number":"pith:2011:6OEBSBL54WFKCUM6L6KP7UOTV2","target":"record","payload":{"canonical_record":{"source":{"id":"1109.2566","kind":"arxiv","version":1},"metadata":{"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-09-12T18:55:01Z","cross_cats_sorted":[],"title_canon_sha256":"f683c9afe54e7db8ff89cbb460b42525d60a5dd58878f25eece6639d23d06e0d","abstract_canon_sha256":"aae55f48709ae95d2f5c9e7d3f6c39ac4ec0a55a71aedeb51b378c2d3e370944"},"schema_version":"1.0"},"canonical_sha256":"f38819057de58aa1519e5f94ffd1d3aea73b4a97fad8acb596ce3ba1fd01fe88","receipt":{"kind":"pith_receipt","key_id":"pith-v1-2026-05","algorithm":"ed25519","signed_at":"2026-05-18T02:00:34.177310Z","signature_b64":"2dzFUiFX9guy5hFNjLvKQsSUkrtmDR+MXzf/CmSfmy26vP/gCFmSNeF000kW7aZNTJFVKc85c8RkwWj0E2a3CQ==","signed_message":"canonical_sha256_bytes","builder_version":"pith-number-builder-2026-05-17-v1","receipt_version":"0.3","canonical_sha256":"f38819057de58aa1519e5f94ffd1d3aea73b4a97fad8acb596ce3ba1fd01fe88","last_reissued_at":"2026-05-18T02:00:34.176617Z","signature_status":"signed_v1","first_computed_at":"2026-05-18T02:00:34.176617Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"source_kind":"arxiv","source_id":"1109.2566","source_version":1,"attestation_state":"computed"},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T02:00:34Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"OkyiEjMXBgMBn4DlU/XRI2Q79mlBVJCyrzN9ZKfahuZ4oTpFsNkccwdEJ2KkReq81iX7c+XCWcM/KDVNGw0MCQ==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-05T12:17:01.840597Z"},"content_sha256":"2a3eca990caa12f8d199bf7f0f5c2114451c549c71ec88ae0cc10712b9b31823","schema_version":"1.0","event_id":"sha256:2a3eca990caa12f8d199bf7f0f5c2114451c549c71ec88ae0cc10712b9b31823"},{"event_type":"graph_snapshot","subject_pith_number":"pith:2011:6OEBSBL54WFKCUM6L6KP7UOTV2","target":"graph","payload":{"graph_snapshot":{"paper":{"title":"Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Digbijoy N. Nath, Michele Esposto, Sanyam Bajaj, Siddharth Rajan, Sriram Krishnamoorthy, Ting-Hsiang Hung","submitted_at":"2011-09-12T18:55:01Z","abstract_excerpt":"We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive c"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1109.2566","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"},"verdict_id":null},"signer":{"signer_id":"pith.science","signer_type":"pith_registry","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54"},"created_at":"2026-05-18T02:00:34Z","supersedes":[],"prev_event":null,"signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"TliUZWHMMvygp1tigV8zdorXdylyjImfFPFtY4cYlO0S0/udt1diM4aSu1sh5kRKFOFZ/Kybgt77sTmCH584Ag==","signed_message":"open_graph_event_sha256_bytes","signed_at":"2026-06-05T12:17:01.840941Z"},"content_sha256":"efde9184b01a99adb529da7d56219035a08480b02201d75181ff17b697d7f290","schema_version":"1.0","event_id":"sha256:efde9184b01a99adb529da7d56219035a08480b02201d75181ff17b697d7f290"}],"timestamp_proofs":[],"mirror_hints":[{"mirror_type":"https","name":"Pith Resolver","base_url":"https://pith.science","bundle_url":"https://pith.science/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/bundle.json","state_url":"https://pith.science/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/state.json","well_known_bundle_url":"https://pith.science/.well-known/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/bundle.json","status":"primary"}],"public_keys":[{"key_id":"pith-v1-2026-05","algorithm":"ed25519","format":"raw","public_key_b64":"stVStoiQhXFxp4s2pdzPNoqVNBMojDU/fJ2db5S3CbM=","public_key_hex":"b2d552b68890857171a78b36a5dccf368a953413288c353f7c9d9d6f94b709b3","fingerprint_sha256_b32_first128bits":"RVFV5Z2OI2J3ZUO7ERDEBCYNKS","fingerprint_sha256_hex":"8d4b5ee74e4693bcd1df2446408b0d54","rotates_at":null,"url":"https://pith.science/pith-signing-key.json","notes":"Pith uses this Ed25519 key to sign canonical record SHA-256 digests. Verify with: ed25519_verify(public_key, message=canonical_sha256_bytes, signature=base64decode(signature_b64))."}],"merge_version":"pith-open-graph-merge-v1","built_at":"2026-06-05T12:17:01Z","links":{"resolver":"https://pith.science/pith/6OEBSBL54WFKCUM6L6KP7UOTV2","bundle":"https://pith.science/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/bundle.json","state":"https://pith.science/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/state.json","well_known_bundle":"https://pith.science/.well-known/pith/6OEBSBL54WFKCUM6L6KP7UOTV2/bundle.json"},"state":{"state_type":"pith_open_graph_state","state_version":"1.0","pith_number":"pith:2011:6OEBSBL54WFKCUM6L6KP7UOTV2","merge_version":"pith-open-graph-merge-v1","event_count":2,"valid_event_count":2,"invalid_event_count":0,"equivocation_count":0,"current":{"canonical_record":{"metadata":{"abstract_canon_sha256":"aae55f48709ae95d2f5c9e7d3f6c39ac4ec0a55a71aedeb51b378c2d3e370944","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-09-12T18:55:01Z","title_canon_sha256":"f683c9afe54e7db8ff89cbb460b42525d60a5dd58878f25eece6639d23d06e0d"},"schema_version":"1.0","source":{"id":"1109.2566","kind":"arxiv","version":1}},"source_aliases":[{"alias_kind":"arxiv","alias_value":"1109.2566","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"arxiv_version","alias_value":"1109.2566v1","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"doi","alias_value":"10.48550/arxiv.1109.2566","created_at":"2026-05-18T02:00:34Z"},{"alias_kind":"pith_short_12","alias_value":"6OEBSBL54WFK","created_at":"2026-05-18T12:26:22Z"},{"alias_kind":"pith_short_16","alias_value":"6OEBSBL54WFKCUM6","created_at":"2026-05-18T12:26:22Z"},{"alias_kind":"pith_short_8","alias_value":"6OEBSBL5","created_at":"2026-05-18T12:26:22Z"}],"graph_snapshots":[{"event_id":"sha256:efde9184b01a99adb529da7d56219035a08480b02201d75181ff17b697d7f290","target":"graph","created_at":"2026-05-18T02:00:34Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"graph_snapshot":{"author_claims":{"count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","strong_count":0},"builder_version":"pith-number-builder-2026-05-17-v1","claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"paper":{"abstract_excerpt":"We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive c","authors_text":"Digbijoy N. Nath, Michele Esposto, Sanyam Bajaj, Siddharth Rajan, Sriram Krishnamoorthy, Ting-Hsiang Hung","cross_cats":[],"headline":"","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-09-12T18:55:01Z","title":"Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride"},"references":{"count":0,"internal_anchors":0,"resolved_work":0,"sample":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1109.2566","kind":"arxiv","version":1},"verdict":{"created_at":null,"id":null,"model_set":{},"one_line_summary":"","pipeline_version":null,"pith_extraction_headline":"","strongest_claim":"","weakest_assumption":""}},"verdict_id":null}}],"author_attestations":[],"timestamp_anchors":[],"storage_attestations":[],"citation_signatures":[],"replication_records":[],"corrections":[],"mirror_hints":[],"record_created":{"event_id":"sha256:2a3eca990caa12f8d199bf7f0f5c2114451c549c71ec88ae0cc10712b9b31823","target":"record","created_at":"2026-05-18T02:00:34Z","signer":{"key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signer_id":"pith.science","signer_type":"pith_registry"},"payload":{"attestation_state":"computed","canonical_record":{"metadata":{"abstract_canon_sha256":"aae55f48709ae95d2f5c9e7d3f6c39ac4ec0a55a71aedeb51b378c2d3e370944","cross_cats_sorted":[],"license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","primary_cat":"cond-mat.mes-hall","submitted_at":"2011-09-12T18:55:01Z","title_canon_sha256":"f683c9afe54e7db8ff89cbb460b42525d60a5dd58878f25eece6639d23d06e0d"},"schema_version":"1.0","source":{"id":"1109.2566","kind":"arxiv","version":1}},"canonical_sha256":"f38819057de58aa1519e5f94ffd1d3aea73b4a97fad8acb596ce3ba1fd01fe88","receipt":{"algorithm":"ed25519","builder_version":"pith-number-builder-2026-05-17-v1","canonical_sha256":"f38819057de58aa1519e5f94ffd1d3aea73b4a97fad8acb596ce3ba1fd01fe88","first_computed_at":"2026-05-18T02:00:34.176617Z","key_id":"pith-v1-2026-05","kind":"pith_receipt","last_reissued_at":"2026-05-18T02:00:34.176617Z","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","receipt_version":"0.3","signature_b64":"2dzFUiFX9guy5hFNjLvKQsSUkrtmDR+MXzf/CmSfmy26vP/gCFmSNeF000kW7aZNTJFVKc85c8RkwWj0E2a3CQ==","signature_status":"signed_v1","signed_at":"2026-05-18T02:00:34.177310Z","signed_message":"canonical_sha256_bytes"},"source_id":"1109.2566","source_kind":"arxiv","source_version":1}}},"equivocations":[],"invalid_events":[],"applied_event_ids":["sha256:2a3eca990caa12f8d199bf7f0f5c2114451c549c71ec88ae0cc10712b9b31823","sha256:efde9184b01a99adb529da7d56219035a08480b02201d75181ff17b697d7f290"],"state_sha256":"e671a588d4be90be2aa33872f048b079cead4ca7d5209b86a13a796c058af6a6"},"bundle_signature":{"signature_status":"signed_v1","algorithm":"ed25519","key_id":"pith-v1-2026-05","public_key_fingerprint":"8d4b5ee74e4693bcd1df2446408b0d54","signature_b64":"gDPHgvpTqLR13PSIlmZ8uhxJz5n0kFqGwC9O60Idh8CPpmjHVJdRey+4KSIZmRH6l3aoCDCA+LvnI9H9aa3LCQ==","signed_message":"bundle_sha256_bytes","signed_at":"2026-06-05T12:17:01.843082Z","bundle_sha256":"b4fd747d0f5a2f326a286dd45df01b2ee24ef2375b295b9ce770aadd2930de87"}}